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    NDT451 Price and Stock

    onsemi NDT451AN

    MOSFET N-CH 30V 7.2A SOT-223-4
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    DigiKey NDT451AN Digi-Reel 5,917 1
    • 1 $1.66
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    • 1000 $0.50978
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    NDT451AN Cut Tape 5,917 1
    • 1 $1.66
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    • 1000 $0.50978
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    NDT451AN Reel 4,000 4,000
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    Avnet Americas NDT451AN Reel 9 Weeks 4,000
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    NDT451AN Reel 9 Weeks 4,000
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    NDT451AN Reel 4,000
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    Mouser Electronics NDT451AN 7,492
    • 1 $1.37
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    • 1000 $0.482
    • 10000 $0.424
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    Verical NDT451AN 15,311 707
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    NDT451AN 3,500 500
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    Arrow Electronics NDT451AN 4,000 9 Weeks 4,000
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    Newark NDT451AN Cut Tape 4,000
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    NDT451AN Reel 4,000
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    Onlinecomponents.com NDT451AN 3,500
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    Rochester Electronics NDT451AN 15,528 1
    • 1 $0.4718
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    • 1000 $0.401
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    TME NDT451AN 3,148 1
    • 1 $1.67
    • 10 $0.9
    • 100 $0.71
    • 1000 $0.66
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    Richardson RFPD NDT451AN 4,000
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    Avnet Asia NDT451AN 9 Weeks 4,000
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    Avnet Silica NDT451AN 10 Weeks 4,000
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    EBV Elektronik NDT451AN 11 Weeks 4,000
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    Master Electronics NDT451AN 3,500
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    onsemi NDT451N

    MOSFET N-CH 30V 5.5A SOT-223-4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NDT451N Reel 2,500
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    • 10000 $0.49936
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    NDT451N Digi-Reel 1
    • 1 $1.8
    • 10 $1.8
    • 100 $1.8
    • 1000 $1.8
    • 10000 $1.8
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    NDT451N Cut Tape 1
    • 1 $1.8
    • 10 $1.8
    • 100 $1.8
    • 1000 $1.8
    • 10000 $1.8
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    onsemi NDT451AN_J23Z

    MOSFET N-CH 30V 7.2A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NDT451AN_J23Z Reel 2,500
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    • 10000 $0.7625
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    Aptina Imaging NDT451AN

    Trans MOSFET N-CH 30V 7.2A 4-Pin(3+Tab) SOT-223 T/R
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    Verical NDT451AN 4,000 4,000
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    Fairchild Semiconductor Corporation NDT451AN

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    Bristol Electronics NDT451AN 780
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    NDT451AN 381
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    Quest Components NDT451AN 7
    • 1 $0.969
    • 10 $0.7752
    • 100 $0.7752
    • 1000 $0.7752
    • 10000 $0.7752
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    Rochester Electronics NDT451AN 4,821 1
    • 1 $0.4718
    • 10 $0.4718
    • 100 $0.4435
    • 1000 $0.401
    • 10000 $0.401
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    Component Electronics, Inc NDT451AN 150
    • 1 $2.31
    • 10 $2.31
    • 100 $1.73
    • 1000 $1.5
    • 10000 $1.5
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    NDT451 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDT451 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDT451AN Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDT451AN Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDT451AN National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDT451AN Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDT451AN_J23Z Fairchild Semiconductor Transistor Mosfet N-CH 30V 7.2A 4SOT-223 T/R Original PDF
    NDT451ANJ23Z Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDT451AN_NL Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDT451N Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDT451N National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDT451N Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDT451NJ23Z Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF

    NDT451 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: February 2009 NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original
    NDT451AN NDT451AN PDF

    NDT451AN

    Abstract: No abstract text available
    Text: July 1996 NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original
    NDT451AN NDT451AN PDF

    CJ125

    Abstract: NDT451N
    Text: N September 1996 NDT451N N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored


    Original
    NDT451N NDT451N CJ125 PDF

    CBVK741B019

    Abstract: F63TNR F852 NDT451AN PN2222A
    Text: July 1996 NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original
    NDT451AN CBVK741B019 F63TNR F852 NDT451AN PN2222A PDF

    651b

    Abstract: NDT451AN 011A7
    Text: N July 1996 NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored


    Original
    NDT451AN NDT451AN 651b 011A7 PDF

    NDT451N

    Abstract: No abstract text available
    Text: September 1996 NDT451N N-Channel Enhancement Mode Field Effect Transistor General Description Features 5.5A, 30V. RDS ON = 0.05Ω @ VGS = 10V. Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original
    NDT451N NDT451N PDF

    NDT451AN

    Abstract: No abstract text available
    Text: February 2009 NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original
    NDT451AN NDT451AN PDF

    CBVK741B019

    Abstract: F63TNR F852 NDT451N PN2222A
    Text: September 1996 NDT451N N-Channel Enhancement Mode Field Effect Transistor General Description Features 5.5A, 30V. RDS ON = 0.05Ω @ VGS = 10V. Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original
    NDT451N CBVK741B019 F63TNR F852 NDT451N PN2222A PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original
    STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original
    BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original
    PDF

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


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    2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L PDF

    diode b26

    Abstract: micro SD Card connector sot23 a36 8q diode sot23 sn74ls574 AD27 AD29 AD30
    Text: P3V VIO P2 P1 PCI_5V A1 1 P3V VIO VIO A2 2 +12V_PCI A3 3 TCK TDO TDI X7 1 A8 8 A9 9 X11 A10 10 1 X12 X10 C55 2 7 B7 1 X50 TOOL_130 TOOL_130 1 C26 C20 0.1 0.1 CC0805 2 CC0805 2 1 1 CC0805 8 B8 1 9 B9 1 C3 C1 0.01 0.01 CC0805 2 2 CC0805 10 B10 A11 11 11 B11


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    CC0805 CR0805 RC1206 NDT452P diode b26 micro SD Card connector sot23 a36 8q diode sot23 sn74ls574 AD27 AD29 AD30 PDF

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original
    UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237 PDF

    surface mount transistor A55

    Abstract: surface mount transistor A48 c60 equivalent CR0805 irf150 rd sot23 sn74ls574 sot223, 31 64 sot23 a36 AD30
    Text: P3V VIO P2 P1 NDA # VDD_PCI A1 1 P3V VIO VIO 1 B1 VDD_PCI A2 2 +12V_PCI A3 3 TCK A4 4 2 B2 TOOL1 3 B3 TMS X8 TDI X9 1 TDO 1 1 4 B4 A6 6 X7 A8 8 A9 9 X11 A10 10 1 X12 1 X10 7 B7 1 X50 12 B12 A13 13 13 B13 A14 14 14 B14 GNT# 18 B18 REQ# A19 19 19 B19 AD30 AD26


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    CC0805 CR0805 NDT451AN CR1206 OT223 LM393M IRF150 surface mount transistor A55 surface mount transistor A48 c60 equivalent CR0805 irf150 rd sot23 sn74ls574 sot223, 31 64 sot23 a36 AD30 PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original
    5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original
    02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B PDF

    BUT11APX equivalent

    Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
    Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


    Original
    BT148-600R BT148-400R BUT11APX equivalent BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice PDF

    U42-12

    Abstract: No abstract text available
    Text: National S e m i c on d u c t o r J u ly 1996 NDT451 AN N -C h a n n el E n h a n c e m e n t M o d e Field E ffect T ra n s is to r General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's


    OCR Scan
    NDT451 density51 OT-223 U42-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: National Semiconductor” July 1996 NDT451 AN N-Channel Enhancement Mode Field Effect Transistor G eneral Description Features These N-Channel enhancem ent m ode pow er field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan
    NDT451 T-223 NDT451AN OT-223 34bTb74 PDF

    T3D diode

    Abstract: T3D 55 diode T3D 45 diode Diode T3D 55 T3D 01 DIODE T3D 43 diode T3D 65 diode DIODE T3D 95 diode T3D Diode T3D 30
    Text: Ju n e 1996 National Semiconductor ” NDT451N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan
    NDT451N b501130 T3D diode T3D 55 diode T3D 45 diode Diode T3D 55 T3D 01 DIODE T3D 43 diode T3D 65 diode DIODE T3D 95 diode T3D Diode T3D 30 PDF

    LAL 2.25

    Abstract: NDT451 NDT451AN TRANSISTOR b72
    Text: Jul y 1996 National f Semiconductor" i NDT451 AN N-Channel Enhancement M ode Field Effect Transistor G eneral Description Features These N-C hannel e n h a n c e m e n t m o d e p o w e r fie ld e ffect tra n s is to rs are pro d u ce d using N a tio n a l's


    OCR Scan
    NDT451 NDT451AN OT-223 LAL 2.25 TRANSISTOR b72 PDF

    Untitled

    Abstract: No abstract text available
    Text: September 1996 National Semiconductor NDT451N N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan
    NDT451N NDT451N OT-223 34bTb74 PDF