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California Eastern Laboratories (CEL) NE3513M04-A RF MOSFET GAAS HJ-FET 2V M04
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DigiKey	NE3513M04-A	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NE3513M04-T2-A RF MOSFET GAAS HJ-FET 2V M04
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DigiKey	NE3513M04-T2-A	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC NE3513M04-T2B-A RF MOSFET GAAS HJ-FET 2V 4MMOLD
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DigiKey	NE3513M04-T2B-A	Bulk			310	1 - 10 - 100 - 1000 $0.97 10000 $0.97	Buy Now
California Eastern Laboratories (CEL) NE3513M04-T2B-A RF MOSFET GAAS HJ-FET 2V 4MMOLD
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DigiKey	NE3513M04-T2B-A	Reel			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Renesas Electronics Corporation NE3513M04-T2B-A NE3513M04 - RF Small Signal Field-Effect Transistor, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET '
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Rochester Electronics	NE3513M04-T2B-A		4,859,690		1	1 $0.9317 10 $0.9317 100 $0.8758 1000 $0.7919 10000 $0.7919	Buy Now

NE3513M04 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NE3513M04-A		Renesas Electronics	RF FETs, Discrete Semiconductor Products, IC HJ-FET RF N-CH LNA M04 4SMD		Original	PDF
NE3513M04-T2-A		Renesas Electronics	RF FETs, Discrete Semiconductor Products, IC HJ-FET RF N-CH LNA M04 4SMD		Original	PDF
NE3513M04-T2B-A		CEL	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 4V 12GHZ M04 4SMD		Original	PDF

NE3513M04 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NE3513 Abstract: MARKING V84 NE3513M04 Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE3513M04 N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain R09DS0028EJ0100 Rev.1.00 Oct 18, 2011 FEATURES • Low noise figure and high associated gain: NF = 0.45 dB TYP., Ga = 13 dB TYP. @VDS = 2 V, ID = 10 mA, f = 12 GHz	Original	NE3513M04 R09DS0028EJ0100 NE3513M04-T2 NE3513M04-T2-A NE3513M04 NE3513 MARKING V84	PDF
NE3513 Abstract: NE3513M04 MARKING V84 Text: Data Sheet NE3513M04 N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain R09DS0028EJ0100 Rev.1.00 Oct 18, 2011 FEATURES • Low noise figure and high associated gain: NF = 0.45 dB TYP., Ga = 13 dB TYP. @VDS = 2 V, ID = 10 mA, f = 12 GHz NF = 0.5 dB TYP., Ga = 12 dB TYP. @VDS = 2 V, ID = 6 mA, f = 12 GHz Reference Value	Original	NE3513M04 R09DS0028EJ0100 NE3513M04-T2 NE3513M04-T2-A NE3513 NE3513M04 MARKING V84	PDF
SMD M05 sot23 Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404 Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly	Original	2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404	PDF
SMD transistor M05 Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE	Original	10/2M SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR	PDF