Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NE3517S03 Search Results

    SF Impression Pixel

    NE3517S03 Price and Stock

    Rochester Electronics LLC NE3517S03-T1D-A

    RF MOSFET HFET 2V S03
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NE3517S03-T1D-A Bulk 221
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.36
    • 10000 $1.36
    Buy Now

    California Eastern Laboratories (CEL) NE3517S03-T1C-A

    RF MOSFET GAAS HJ-FET 2V S03
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NE3517S03-T1C-A Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Renesas Electronics Corporation NE3517S03-T1D-A

    K-Band Super Low Noise Amplifier N-Channel GaAs HJ-FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical NE3517S03-T1D-A 117,560 244
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.3875
    • 10000 $1.3875
    Buy Now
    Rochester Electronics NE3517S03-T1D-A 117,560 1
    • 1 $1.31
    • 10 $1.31
    • 100 $1.23
    • 1000 $1.11
    • 10000 $1.11
    Buy Now

    NE3517S03 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE3517S03-T1C-A California Eastern Laboratories RF FETs, Discrete Semiconductor Products, DISCRETE RF FET Original PDF

    NE3517S03 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NE3517S03

    Abstract: rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS


    Original
    NE3517S03 NE3517S03-T1C NE3517S03-T1C-A NE3517S03-T1D NE3517S03-T1D-A NE3517S03 rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid PDF

    NE3517S03-A

    Abstract: NE3517S03-T1C NE3517S03 HS350
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS


    Original
    NE3517S03 NE3517S03-T1C NE3517S03-T1D NE3517S03-T1C-A NE3517S03-T1D-A NE3517S03-A PG10787EJ01V0DS NE3517S03-A NE3517S03 HS350 PDF

    mobile phone basic block diagram

    Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original
    G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT PDF

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original
    PDF

    ic isl 887

    Abstract: 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03
    Text: RF & マイクロ波デバイス システムブロック www.renesas.com 2010.04 目 次 1. はじめに •··········································································································································· 3


    Original
    PA86x PG2158T5K PC3218T5Y NES1823M-45, NES1823M-180, NES1823M-240, NES1823S-45, NES1823S-90 R09CA0001JJ0100 PX10020JJ42V0PF ic isl 887 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03 PDF

    SMD transistor M05

    Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
    Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE


    Original
    10/2M SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR PDF

    mc10087f1

    Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
    Text: 1/89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.


    Original
    IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059 PDF

    NE3517S03

    Abstract: NE3517S03-T1C rogers 5880 HS350 NE3517S03-T1D-A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    UPC8236

    Abstract: 2SC5508 2SC3357/NE85634 CATV MODULATOR NE5510279A upg2406t6r Microwave GaAs FET catalogue NE3515S02 NE662M04 NE3514S02
    Text: RF AND MICROWAVE DEVICES SYSTEM BLOCK DIAGRAMS www.renesas.com 2010.04 CONTENTS 1. INTRODUCTION . 3 1-1. Basic RF Blocks . 4


    Original
    R09CA0001EJ0100 PX10020EJ42V0PF UPC8236 2SC5508 2SC3357/NE85634 CATV MODULATOR NE5510279A upg2406t6r Microwave GaAs FET catalogue NE3515S02 NE662M04 NE3514S02 PDF

    2SC5508

    Abstract: UPC3243 UPC8236 NE3509 NE3517S03 transistor 20107 800 Mhz Cordless Phone circuit diagram NESG270034 2SC4226 APPLICATION NOTES NE5510279A
    Text: RF AND MICROWAVE DEVICES SYSTEM BLOCK DIAGRAMS www.renesas.com 2010.10 CONTENTS 1. INTRODUCTION . 3 1-1. Basic RF Blocks . 4


    Original
    R09CA0001EJ0300 2SC5508 UPC3243 UPC8236 NE3509 NE3517S03 transistor 20107 800 Mhz Cordless Phone circuit diagram NESG270034 2SC4226 APPLICATION NOTES NE5510279A PDF