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Untitled Abstract: No abstract text available Text: NPN SILICON MICROWAVE TRANSISTOR FEATURES • H IG H G A IN B A N D W ID T H P R O D U C T : f r - 6 G H z NE57800 NE57835 GAIN BANDWIDTH PRODUCT AND FORWARD CURRENT GAIN vs. COLLECTOR CURRENT • L O W N O IS E F IG U R E : 2 .5 d B at 2 G H z X CD • H IG H G A IN : 13 d B at 2 G H z	OCR Scan	PDF	NE57800 NE57835 IS12I J22li.
2SC2150 Abstract: NE57835 NE578 nec NE57800 NE57807 2SC215 NE AND micro-X NE578 transistor NEC ka 42 Text: NEC/ CALIFORNIA NEC 5 bE D b427414 000540b 4bS HINE CC NE57800 NE57807 NE57835 NPN SILICON MICROWAVE TRANSISTOR "í-si-n - FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 6 GHz The NE578 series of NPN silicon transistors is designed for use	OCR Scan	PDF	bM27M14 QQQE40b NE57800 NE57807 NE57835 NE57800 NE578 2SC2150 NE57835 NE578 nec 2SC215 NE AND micro-X transistor NEC ka 42
2SC2150 Abstract: No abstract text available Text: NPN SILICON MICROWAVE TRANSISTOR NE57800 NÉ57835 GAIN BANDWIDTH PRODUCT AND FORWARD CURRENT GAIN vs. FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT = 6 GHz 20 • LOW NOISE FIGURE: 2.5 dB at 2 GHz • HIGH GAIN: 13 dB at 2 GHz 10 • RELIABILITY PROVEN IN SPACE:	OCR Scan	PDF	NE57800 NE578 lS22l 2SC2150
Untitled Abstract: No abstract text available Text: NPN SILICON MICROWAVE TRANSISTOR NE57800 NE57835 GAIN BANDWIDTH PRODUCT AND FORWARD CURRENT GAIN vs. FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 6 GHz • LOW NOISE FIGURE: 2.5 dB at 2 GHz • HIGH GAIN: 13 dB at 2 GHz 10 . RELIABILITY PROVEN IN SPACE:	OCR Scan	PDF	NE57800 NE57835 NE578 S22-S21 IS12I L427525
SVI 3104 c Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or	OCR Scan	PDF	AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
73412 Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318 Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7	OCR Scan	PDF	NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318