NE72218 V58 Search Results

NE72218 V58 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ne72218 v58 Abstract: NE72218 NE72218-T1 4E12 Text: NE72218 C TO X BAND N-CHANNEL GaAs MESFET FEATURES PACKAGE DIMENSIONS Units in mm • HIGH POWER GAIN: Gs = 5.0 dB TYP at f = 12 GHz • LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 11 GHz GATE LENGTH: LG = 0.8 µm (recessed gate) • GATE WIDTH: WG = 400 µm	Original	NE72218 OT-343) NE72218 27e-12 1e-10 85e-12 055e-12 24-Hour ne72218 v58 NE72218-T1 4E12	PDF
C10535E Abstract: NE72218 NE72218-T1 NE72218-T2 VP15-00-3 ne72218 v58 Text: DATA SHEET GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz • Gate length : Lg = 0.8 µm • Gate width : Wg = 400 µm • 4-pin super minimold package	Original	NE72218 NE72218-T1 NE72218-T2 C10535E NE72218 NE72218-T1 NE72218-T2 VP15-00-3 ne72218 v58	PDF
ne72218 v58 Abstract: NE72218 NE72218-T1 NE72218-T2 VP15-00-3 Text: DATA SHEET GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 µm recessed gate • Gate Width : Wg = 400 µm • 4-pin super minimold • Tape & reel packaging only available	Original	NE72218 NE72218-T1 NE72218-T2 ne72218 v58 NE72218 NE72218-T1 NE72218-T2 VP15-00-3	PDF
ne72218 v58 Abstract: NE72218-T1 NE72218-T2 C10535E NE72218 VP15-00-3 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
NEC 2561 Abstract: nec 2561 le NEC 2561 LE 301 sem 2105 16 pin saa 1074 SAA 1061 nec 2561 4 pin cp 1099 c 945 p 331 saa 1049 Text: PRELIMINARY DATA SHEET_ NEC GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 yum recessed gate • Gate Width : Wg = 400 ym	OCR Scan	NE72218 NE72218-T1 NE72218-T2 NEC 2561 nec 2561 le NEC 2561 LE 301 sem 2105 16 pin saa 1074 SAA 1061 nec 2561 4 pin cp 1099 c 945 p 331 saa 1049	PDF
AM/SSC 9500 ic data Abstract: No abstract text available Text: DATA SHEET_ GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEA TU R E S • High Power Gain: Gs = 5.0 dB TYP. @ f = 12 GHz • Gate Length : Lg • Gate Width : Wg • 4-pin super minimold •	OCR Scan	NE72218 NE72218-T1 NE72218-T2 VP15-00-3 WS60-00-1 P12750EJ2V0D AM/SSC 9500 ic data	PDF
ne72218 v58 Abstract: tom 1157 Text: NEC C TO X BAND N-CHANNEL GaAs MESFET FEATURES PACKAGE DIMENSIONS Units in mm • HIGH POWER GAIN: Gs = 5.0 dB TYP at f = 12 GHz • LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 11 GHz • NE72218 PACKAGE OUTLINE 18 - 2.1 0 .2 ± - O \|to;o5	OCR Scan	OT-343) NE72218 NE72218 1e-14 4e-12 27e-12 1e-10 85e-12 055e-12 2e-10 ne72218 v58 tom 1157	PDF
MARKING V58 Abstract: No abstract text available Text: C TO X BAND N-CHANNEL GaAs MESFET FEATURES NE72218 PACKAGE DIMENSIONS Units in mm HIGH POWER GAIN: Gs = 5.0 dB TYP at f = 12 GHz GATE LENGTH: Lg = 0.8 PACKAGE OUTLINE 18 (recessed gate) - 2.1 ± 0 .2 - H .25 ± 0.1 H GATE WIDTH: W g = 400 jim 0-3^0.05 4 PIN SUPER MINI MOLD	OCR Scan	NE72218 NE72218 24-Hour MARKING V58	PDF