bfy 40
Abstract: STM-16 STM-64 10 gb laser diode NR8501BP NEC SEMICONDUCTOR CATALOG microwave product catalog
Text: OPTICAL SEMICONDUCTOR DEVICES FOR FIBEROPTIC COMMUNICATIONS SELECTION GUIDE May 2001 SAFETY INFORMATION ON THIS PRODUCT NEC Corporation DANGER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT
|
Original
|
P12480EJNV0SG00
bfy 40
STM-16
STM-64
10 gb laser diode
NR8501BP
NEC SEMICONDUCTOR CATALOG
microwave product catalog
|
PDF
|
nec laser diode OTDR
Abstract: NEC DIODE LASER PX10160E nec laser diode
Text: DATA SHEET LASER DIODE NX7639BB-AA 1 625 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION DESCRIPTION The NX7639BB-AA is a 1 625 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode coaxial module with single mode fiber.
|
Original
|
NX7639BB-AA
NX7639BB-AA
nec laser diode OTDR
NEC DIODE LASER
PX10160E
nec laser diode
|
PDF
|
PX10160E
Abstract: NEC diode NEC DIODE LASER nec laser diode OTDR NX7637BF PL10794EJ01V0DS nec 1252
Text: DATA SHEET LASER DIODE NX7637BF-AA 1 625 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION DESCRIPTION The NX7637BF-AA is a 1 625 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode coaxial module with single mode fiber.
|
Original
|
NX7637BF-AA
NX7637BF-AA
PX10160E
NEC diode
NEC DIODE LASER
nec laser diode OTDR
NX7637BF
PL10794EJ01V0DS
nec 1252
|
PDF
|
PX10160E
Abstract: NEC invisible laser radiation NEC DIODE LASER PL10700EJ01V0DS
Text: DATA SHEET LASER DIODE NX5530SA 1 550 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS DESCRIPTION The NX5530SA is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode. This device is specified to operate under pulsed condition and designed for light source of Optical Time Domain
|
Original
|
NX5530SA
NX5530SA
PX10160E
NEC invisible laser radiation
NEC DIODE LASER
PL10700EJ01V0DS
|
PDF
|
NX5330SA
Abstract: PX10160E
Text: DATA SHEET LASER DIODE NX5330SA 1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS DESCRIPTION The NX5330SA is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode. This device is specified to operate under pulsed condition and designed for light source of Optical Time Domain
|
Original
|
NX5330SA
NX5330SA
PX10160E
|
PDF
|
NX5322
Abstract: No abstract text available
Text: LASER DIODE NX5322 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5322 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.
|
Original
|
NX5322
PL10740EJ01V0DS
|
PDF
|
STM-16
Abstract: PX10160E
Text: DATA SHEET LASER DIODE NX8315XC 1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION The NX8315XC is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package
|
Original
|
NX8315XC
NX8315XC
STM-16
OC-48
STM-16
PX10160E
|
PDF
|
monitor nec
Abstract: PX10160E
Text: DATA SHEET LASER DIODE NX6308GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6308GH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION
|
Original
|
NX6308GH
NX6308GH
monitor nec
PX10160E
|
PDF
|
FTTH
Abstract: NX6410GH PX10160E A1490
Text: DATA SHEET LASER DIODE NX6410GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6410GH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION
|
Original
|
NX6410GH
NX6410GH
FTTH
PX10160E
A1490
|
PDF
|
PX10160E
Abstract: STM-16 NX8316XC
Text: DATA SHEET LASER DIODE NX8316XC 1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION The NX8316XC is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package
|
Original
|
NX8316XC
NX8316XC
STM-16
OC-48
PX10160E
STM-16
|
PDF
|
PX10160E
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX6309GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6309GH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION
|
Original
|
NX6309GH
NX6309GH
PX10160E
|
PDF
|
PX10160E
Abstract: A1490
Text: DATA SHEET LASER DIODE NX6411GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6411GH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION
|
Original
|
NX6411GH
NX6411GH
PX10160E
A1490
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX6308GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6308GH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION
|
Original
|
NX6308GH
NX6308GH
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX6411GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6411GH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION
|
Original
|
NX6411GH
NX6411GH
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET LASER DIODE NX6410GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6410GH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
|
Original
|
NX6410GH
NX6410GH
|
PDF
|
A1276
Abstract: NX5315 NX5315EH NX5315EK PX10160E laser gpon
Text: PRELIMINARY DATA SHEET LASER DIODE NX5315 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These
|
Original
|
NX5315
A1276
NX5315EH
NX5315EK
PX10160E
laser gpon
|
PDF
|
NX6406
Abstract: NX6406GH NX6406GK PX10160E
Text: PRELIMINARY DATA SHEET LASER DIODE NX6406 Series 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR FTTH PON APPLICATION DESCRIPTION The NX6406 Series is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD.
|
Original
|
NX6406
NX6406GH
NX6406GK
PX10160E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET LASER DIODE NX6411GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6411GH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
|
Original
|
NX6411GH
NX6411GH
|
PDF
|
NX6410GH
Abstract: PX10160E NEC DIODE LASER
Text: PRELIMINARY DATA SHEET LASER DIODE NX6410GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6410GH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
|
Original
|
NX6410GH
NX6410GH
PX10160E
NEC DIODE LASER
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX6309GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6309GH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION
|
Original
|
NX6309GH
NX6309GH
|
PDF
|
NEC DIODE LASER
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX8346TS 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8346TS is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package
|
Original
|
NX8346TS
NX8346TS
NEC DIODE LASER
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX5322 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5322 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.
|
Original
|
NX5322
|
PDF
|
NX5317EH
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX5317EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5317EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode. These devices are designed for application up to 1.25 Gb/s.
|
Original
|
NX5317EH
NX5317EH
|
PDF
|
PX10160E
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET LASER DIODE NX6309GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6309GH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
|
Original
|
NX6309GH
NX6309GH
PX10160E
|
PDF
|
