Untitled
Abstract: No abstract text available
Text: DATA SHEET_ NEC MOS INTEGRATED CIRCUIT uPD16750 384-OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 256-GRAY SCALES DESCRIPTION The /j, P D 1 67 50 is a sou rce d rive r for T F T -L C D s ca p a b le o f d e aling w ith d isp la ys w ith 2 5 6 -g ra y scales. D ata in pu t is
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384-OUTPUT
256-GRAY
IZAC1003
S13719EJ2V0DS00
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1ss nec
Abstract: No abstract text available
Text: PRELIM INARY DATA S H E E T MOS IN TEGRATED CIRCUIT MC-428LFF72 3.3 V OPERATION 8 M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, HYPER PAGE MODE EDO Description Th e M C-428LFF72 1« • 6.388,608 words by 72 bits dynam ic RAM m oduli on which 8 pieces of 84 M DRAM :
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MC-428LFF72
72-BIT
C-428LFF72
b427525
1ss nec
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M1314
Abstract: PD42S18160 4218160LE-60
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT //PD42S18160, 4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S18160, 4218160 are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.
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16-BIT,
uPD42S18160
uPD4218160
PD42S18160
50-pin
42-pin
PD42S18160-60,
PD42S18160-70,
M1314
4218160LE-60
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NEC 1357
Abstract: LA 8873 TRANSISTOR C 4460
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the
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2SC5004
2SC5004
NEC 1357
LA 8873
TRANSISTOR C 4460
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d70108
Abstract: NEC d70108 V20 70108 iem-871 nec d70108 nec v20 d70108 mPD70108 D70108 MICRO pD8080AFC uPD70108
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿uP D 7 0 1 0 8 V20 16-/8-BIT MICROPROCESSOR The //PD70108 V20 is a CMOS 16-/8-bit microprocessor. It has a 16-bit architecture and is equipped with a 8-bit data bus. The /iPD70108 has a pow erful instruction set which includes bit processing and packed
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V20TM
16-/8-BIT
uPD70108
16-bit
/PD70108
PD70108
PD70116
d70108
NEC d70108 V20
70108
iem-871
nec d70108
nec v20 d70108
mPD70108
D70108 MICRO
pD8080AFC
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IRF 748 n
Abstract: PD4264800
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD4264800, 4265800 64 M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, FAST PAGE MODE Description The /¿PD4264800, 4265800 are 8,388,608 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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uPD4264800
uPD4265800
PD4264800,
32-pin
jUPD4264800
D4265800-A50
/JPD4264800-A60
PD4264800.
PD4264800G5-7JD,
IRF 748 n
PD4264800
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V2vFx
Abstract: 78p018f MEC 1300 nu
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION T h e ^ P D 7 8 P 0 1 8 F {A c o m e s un d e r a m ore severe qua lity a s s u ra n c e p ro g ra m than th e ¿/P D 76P 01 8= {stan dard grade), so it is cla s s ifie d a s spe c ia l grade in N E C ’s qua lity grade cla ssification .
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uPD78P018F
uPD76P018
PD78P018F
WS60-00-1
mPD78P01BFCW
64-pin
V2vFx
78p018f
MEC 1300 nu
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM D escrip tio n The /iPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynam ic random-access m em ories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 w ordxbitxbank , respectively.
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PD4516421,
16M-bit
/iPD4516421,
216-bit
152x4x2,
576x8x2
288x16x2
44-pin
50-pin
b42755S
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th 20594
Abstract: HA 17723 30976 1982U 22024U
Text: DATA SHEET SILICON TRANSISTOR 2SC5288 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . (Unit: mm) FEATURES • P- 1 = 24 dBm TYP.
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2SC5288
2SC5288
SC-61
2SC5288-T1
th 20594
HA 17723
30976
1982U
22024U
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PC1571
Abstract: upc1571
Text: NEC /uPC1571 COMPANDER N E C Electronics Inc. Pin Configuration D escription T h e /UPC1571 is a d u a l g a in c o n tr o l c ir c u it in w h ic h e ith e r c h a n n e l m a y be u se d as a d y n a m ic ra n g e c o m p re s s o r o r e x p a n d e r. E ach c h a n n e l c o n ta in s a
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uPC1571
/uPC1571
//PC1571
PC1571
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780308GF
Abstract: LS1CH CKK6
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT ¿¿PD 7 8 0 3 0 6 ,7 8 0 3 0 8 8-BIT SINGLE-CHIP MICROCONTROLLER D E S C R IP T IO N /¿PD7803Q6 and 780308 are pro d u c ts in the //P D 7 8 0 3 0 8 sub s e rie s w ith in th e 78K /0 series, w h ic h in co rp o ra te s LCD
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uPD7803Q6
uPD780308
78K/0
fiPD780308,
780308Y
78K/l
PD780306GC-xxx-8EU
780308GC-xxx-8EU
780308GF
LS1CH
CKK6
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT INFORMATION NEC MOS INTEGRATED CIRCUIT 8-BIT SINGLE-CHIP MICROCONTROLLER The ,uPD78F9197Y is ,uPD789197Y sub-series products of the 78K/0S series. These microcontrollers feature an 8-bit CPU, I/O ports, timers, a serial interface, A/D converters, interrupt control
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uPD78F9197Y
uPD789197Y
78K/0S
uPD789196Y
uPD78F9197Yest
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pc1571c
Abstract: PC1571 upc1571 compressor ALC compressor ic
Text: NEC A/PCI 571 COMPANDER NEC Electronics Inc. Pin Configuration Description T h e f j PC 1571 is a d u a l g a in c o n tr o l c ir c u it in w h ic h e ith e r c h a n n e l m a y be u se d as a d y n a m ic ra n g e c o m p re s s o r o r e x p a n d e r. E a ch c h a n n e l c o n ta in s a
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uPC1571
PC1571
pc1571c
PC1571
compressor ALC
compressor ic
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SES N 2402
Abstract: IC3645 Q0B215 73s2s IC-3645 D482235 TI42
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿ P P 4 8 2 2 3 4 , / 4 8 2 2 3 5 2M-Bit Dual Port Graphics Buffer 256K-WORD BY 8-BIT Description The /¿PD482234 and /¿PD482235 have a random access port and a serial access port. The random access port has a 2M -bit 262, 144 w ords x 8 bits memory cell array structure. The serial access port can perform
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256K-WORD
uPD482234
uPD482235
/iPD482235
/XPP482234,
/iPD482234,
xPD482235.
/iPD482234LE-xx
/iPD482235LE-xx
PD482234G5-XX
SES N 2402
IC3645
Q0B215
73s2s
IC-3645
D482235
TI42
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UPD4265160-A60
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD4264160, 4265160 6 4 M -B IT D YN A M IC RAM 4 M -W O R D BY 16-BIT, FAST PAGE M O DE Description The /iPD 4264160,4265160 are 4,194,304 words by 16 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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uPD4264160
uPD4265160
16-BIT,
50-prn
JPD4264160-A50
/PD4265160-A50
/PD4264160-A60
UPD4265160-A60
S50G5-80-7JF3
/iPD4264160,
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transistor 2sc 1586
Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range
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2SC5006
2SC5006
transistor 2sc 1586
B 660 TG
TRANSISTOR 2Sc 2525
L 3705
2sc 1364 transistor
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transistor NEC B 617
Abstract: nec. 5.5 473
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range
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2SC5007
2SC5007
transistor NEC B 617
nec. 5.5 473
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NEC concurrent rdram
Abstract: concurrent RDRAM 72 NEC Rambus
Text: NEC MOS INTEGRATED CIRCUIT J IP D 4 8 8 1 7 0 18M bit Ram bus DRAM IM w o rd X 9bit x 2bank D e s c rip tio n The 18-Megabit Rambus™ DRAM (RDRAM™) is an extremely-high-speed CMOS DRAM organized a sJM words by 9 bits and capable of bursting up to 256 bytes of data at 2 nanoseconds per byte. The use of Rambus S ig r ilf f llM f t jc
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18-Megabit
UPD488170
ED-7424)
NEC concurrent rdram
concurrent RDRAM 72
NEC Rambus
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P130T
Abstract: Z57F
Text: ¿¿PD75112, 75116 4-Bit Single-Chip Microcomputer Data Sheet Description Please refer to "Quality Grade on NEC Semicon ductor Devices" Document number IEI-1209 published by NEC Corporation to know the speci fication of quality grade on the devices and its
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PD75112,
IEI-1209)
/zPD75116
/iPD75116
tPD75108.
PD75116
mPD751
EEU-1346
EEU-1343
EEU-1291
P130T
Z57F
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2SC 968 NPN Transistor
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from
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2SC5007
2SC 968 NPN Transistor
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uPD4168
Abstract: bq 726
Text: 4^ /1T V * * pPD7831xA/78P31xA 16-/8-Bit, Single-Chip CMOS Microcomputers, Real-Time Control Oriented N E C E le c tro n ic s Inc. Description n Four-channel 8 -bit A/D converter The pPD7831xA family of microcomputers is designed for use in process control. They perform all the usual
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pPD7831xA/78P31xA
16-/8-Bit,
pPD7831xA
The/jPD78310A/312A
uPD4168
bq 726
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4800L
Abstract: IC-3052B 1PD42S4800L-A70 424800L uPD424800-L
Text: NEC / DATA SHEET MOS INTEGRATED CIRCUIT _ / juPD42S4800L, 424800L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The /¿PD42S4800L, 424800L are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability
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uPD42S4800L
uPD424800L
PD42S4800L,
424800L
PD42S4800L
28-pin
/1PD42S4800L-A70,
424800L-A70
/1PD42S4800L-A80,
4800L
IC-3052B
1PD42S4800L-A70
uPD424800-L
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concurrent rdram NEC
Abstract: NEC rdram concurrent 16MB NEC RDRAM concurrent concurrent RDRAM 72 Concurrent RDRAM concurrent rdram LG NEC concurrent rdram NEC Rambus LG concurrent RDRAM
Text: NEC MOS INTEGRATED CIRCUIT ju ,P D 4 8 8 1 7 0 18M bit Rambus DRAM 1 Mword x 9bit x 2bank Description The 18-Megabit Rambus™ DRAM (RDRAM™) is an extremeiy-high-speed CMOS DRAM organized as.gM woi [by 4 9 bits and capable of bursting up to 256 bytes of data at 2 nanoseconds per byte. The use of Rambus Signin
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18-Megabit
005555D
I1PD488170
42752S
UPD488170
ED-7424)
b427525
concurrent rdram NEC
NEC rdram concurrent 16MB
NEC RDRAM concurrent
concurrent RDRAM 72
Concurrent RDRAM
concurrent rdram LG
NEC concurrent rdram
NEC Rambus
LG concurrent RDRAM
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from
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2SC5010
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