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    NESG3031 Price and Stock

    California Eastern Laboratories (CEL) NESG3031M05-EVNF58

    EVAL BOARD NESG3031M05 5.8GHZ
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    California Eastern Laboratories (CEL) NESG3031M05-EVNF16

    EVAL BOARD NESG3031M05 1.6GHZ
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    California Eastern Laboratories (CEL) NESG3031M05-EVNF24

    EVAL BOARD NESG3031M05 2.4GHZ
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    California Eastern Laboratories (CEL) NESG3031M05-EVNF58-A

    EVAL BOARD NESG3031M05
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    Renesas Electronics Corporation NESG3031M14-T3

    RF POWER AMP TRANSISTOR, FT gt; 300 MHZ,4.3V V(BR)CEO,35MA I(C),TSOP
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    Quest Components NESG3031M14-T3 9,155
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    NESG3031M14-T3 120
    • 1 $2.456
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    Find more NESG3031 price and stock on Findchips.com

    NESG3031 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NESG3031M05 California Eastern Laboratories NPN SILICON GERMANIUM RF TRANSISTOR Original PDF
    NESG3031M05 NEC NPN SiGe high frequency transistor. Original PDF
    NESG3031M05-A NEC TRANS NPN 5.2GHZ M05 Original PDF
    NESG3031M05-EVNF16 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NESG3031M05 1.6GHZ Original PDF
    NESG3031M05-EVNF24 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NESG3031M05 2.4GHZ Original PDF
    NESG3031M05-EVNF58 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NESG3031M05 5.8GHZ Original PDF
    NESG3031M05-EVNF58-A California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NESG3031M05 Original PDF
    NESG3031M05FB NEC NPN SiGe RF Transistor for Low Noise, High-gain Amplification Flat-lead 4-pin Thin-type Super Minimold (M05, 2012 Package) Original PDF
    NESG3031M05-T1 California Eastern Laboratories NPN SILICON GERMANIUM RF TRANSISTOR Original PDF
    NESG3031M05-T1 NEC NPN SiGe high frequency transistor. Original PDF
    NESG3031M14 California Eastern Laboratories NPN SiGe HIGH FREQUENCY TRANSISTOR Original PDF
    NESG3031M14 NEC NPN SiGe high frequency transistor. Original PDF
    NESG3031M14-A California Eastern Laboratories NPN SiGe HIGH FREQUENCY TRANSISTOR Original PDF
    NESG3031M14FB NEC NPN SiGe RF Transistor for Low Noise, High-gain Amplification 4-pin Lead-less Minimold (M14, 1208 Package) Original PDF
    NESG3031M14FB-T3 NEC NPN SiGe RF Transistor for Low Noise, High-gain Amplification 4-pin Lead-less Minimold (M14, 1208 Package) Original PDF
    NESG3031M14-T3 NEC NPN SiGe high frequency transistor. Original PDF
    NESG3031M14-T3-A California Eastern Laboratories NPN SiGe HIGH FREQUENCY TRANSISTOR Original PDF

    NESG3031 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NESG3031M14

    Abstract: NESG3031M14-A NESG3031M14-T3 NESG3031M14-T3-A
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz


    Original     		PDF NESG3031M14 NESG3031M14-A NESG3031M14-T3 NESG3031M14 NESG3031M14-A NESG3031M14-T3-A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz


    Original     		PDF NESG3031M14 NESG3031M14 NESG3031M14-T3 NESG3031M14-A NESG303ntrol

    MARKING T1K

    Abstract: No abstract text available
    Text: NEC's NPN SiGe NESG3031M05 HIGH FREQUENCY TRANSISTOR FEATURES • LOW NOISE FIGURE AND HIGH-GAIN NF = 0.95 dB TYP, Ga = 10.0 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP, Ga = 9.5 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz • MAXIMUM STABLE POWER GAIN:


    Original     		PDF NESG3031M05 OT-343 NESG3031M05-A NESG3031M05-T1-A MARKING T1K

    transistor marking T1k ghz

    Abstract: MARKING T1K NESG3031M05 NESG3031M05-T1 ZL 58 transistor marking T1k
    Text: PRELIMINARY DATA SHEET NEC's NPN SiGe NESG3031M05 HIGH FREQUENCY TRANSISTOR FEATURES • LOW NOISE FIGURE AND HIGH-GAIN NF = 0.95 dB TYP, Ga = 10 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP, Ga = 9.5 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz


    Original     		PDF NESG3031M05 NESG3031M05-T1 transistor marking T1k ghz MARKING T1K NESG3031M05 NESG3031M05-T1 ZL 58 transistor marking T1k

    3 w RF POWER TRANSISTOR NPN 5.8 ghz

    Abstract: RF TRANSISTOR 2.5 GHZ s parameter ZL+58
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz


    Original     		PDF NESG3031M14 NESG3031M14 NESG3031M14-A PU10415EJ04V0DS 3 w RF POWER TRANSISTOR NPN 5.8 ghz RF TRANSISTOR 2.5 GHZ s parameter ZL+58

    transistor marking T1k ghz

    Abstract: NESG3031M05-A NESG3031M05 3 w RF POWER TRANSISTOR NPN 5.8 ghz NESG3031M05-T1-A
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz


    Original     		PDF NESG3031M05 NESG3031M05 NESG3031M05-A PU10414EJ04V0DS transistor marking T1k ghz 3 w RF POWER TRANSISTOR NPN 5.8 ghz NESG3031M05-T1-A

    NEC JAPAN

    Abstract: NESG3031M14 NESG3031M14-T3
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification


    Original     		PDF NESG3031M14 NESG3031M1conductor NEC JAPAN NESG3031M14 NESG3031M14-T3

    NESG3031M14

    Abstract: NESG3031M14-A NESG3031M14-T3-A
    Text: DATASHEET NEC's NPN SiGe NESG3031M14 HIGH FREQUENCY TRANSISTOR FEATURES • THE DEVICE IS AN IDEAL CHOICE FOR LOW NOISE, HIGH-GAIN AMPLIFICATION: NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz


    Original     		PDF NESG3031M14 NESG3031M14-A NESG3031M14-T3-A NESG3031M14 NESG3031M14-A NESG3031M14-T3-A

    Untitled

    Abstract: No abstract text available
    Text: DATASHEET NEC's NPN SiGe NESG3031M14 HIGH FREQUENCY TRANSISTOR FEATURES • THE DEVICE IS AN IDEAL CHOICE FOR LOW NOISE, HIGH-GAIN AMPLIFICATION: NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz


    Original     		PDF NESG3031M14 NESG3031M14-A NESG3031M14-T3-A

    NESG3031M05

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification


    Original     		PDF NESG3031M05 NESG3031M05 NESG3031M05-T1

    NESG3031M14

    Abstract: NESG3031M14-A NESG3031M14-T3 NESG3031M14-T3-A
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz


    Original     		PDF NESG3031M14 NESG3031M14-A NESG30NEC NESG3031M14 NESG3031M14-A NESG3031M14-T3 NESG3031M14-T3-A

    2012 NEC

    Abstract: transistor marking T1k ghz nec 2012 NESG3031M05 NESG3031M05-T1 MARKING T1K transistor marking T1k
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification


    Original     		PDF NESG3031M05 2012 NEC transistor marking T1k ghz nec 2012 NESG3031M05 NESG3031M05-T1 MARKING T1K transistor marking T1k

    NESG3031M05-T1-A

    Abstract: NESG3031M05
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification


    Original     		PDF NESG3031M05 NESG3031M05 NESG3031M05-T1-A

    transistor marking T1k ghz

    Abstract: NESG3031M05 NESG3031M05-A NESG3031M05-T1 MARKING T1K
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz


    Original     		PDF NESG3031M05 transistor marking T1k ghz NESG3031M05 NESG3031M05-A NESG3031M05-T1 MARKING T1K

    NESG3031M05-T1

    Abstract: transistor marking T1k ghz NESG3031M05 NESG3031M05-A
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz


    Original     		PDF NESG3031M05 NESG3031M05-T1 transistor marking T1k ghz NESG3031M05 NESG3031M05-A

    NESG3031M14

    Abstract: NESG3031M14-T3
    Text: PRELIMINARY DATA SHEET NEC's NPN SiGe NESG3031M14 HIGH FREQUENCY TRANSISTOR FEATURES • LOW NOISE FIGURE AND HIGH-GAIN NF = 0.95 dB TYP, Ga = 10 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP, Ga = 9.5 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz


    Original     		PDF NESG3031M14 NESG3031M14-T3 NESG3031M14 NESG3031M14-T3

    2012 NEC

    Abstract: NESG3031M05 NESG3031M05-A NESG3031M05-T1 transistor marking T1k ghz
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification


    Original     		PDF NESG3031M05 NESG30NEC 2012 NEC NESG3031M05 NESG3031M05-A NESG3031M05-T1 transistor marking T1k ghz

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    mobile phone basic block diagram

    Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    NE5510279A

    Abstract: uPB1512TU NE350184C dvbt diagram NE3503M04 5.8 ghz Transceiver IC NE552 gp bjt InMarSat demodulator ne3210s01
    Text: Unplugged. Radio communication Higher frequency communication systems are one of today's growth markets. One factor is the increasing demand for point-to-point or pointto-multipoint radio links within the backbone of the 2G and 3G cellular networks. The other is


    Original     		PDF

    isl 62

    Abstract: PU10730JJ01V0TN NESG3031M14 NEC 4570 J300-2 53bs
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF NESG3031M14GPSLNA PU10730JJ01V0TN1 PU10730JJ01V0TN opt45 10opts isl 62 PU10730JJ01V0TN NESG3031M14 NEC 4570 J300-2 53bs

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF