mmic n1
Abstract: No abstract text available
Text: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the
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FMM5701X
24GHz
24GHz
18-28GHz
FMM5701X
18-28GHz
mmic n1
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Untitled
Abstract: No abstract text available
Text: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the
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FMM5701X
24GHz
24GHz
18-28GHz
FMM5701X
18-28GHz
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FMM5701X
Abstract: 18-28GHz
Text: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the
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FMM5701X
24GHz
24GHz
18-28GHz
FMM5701X
18-28GHz
FCSI0598M200
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24ghz
Abstract: FMM5701X
Text: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the
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FMM5701X
24GHz
24GHz
18-28GHz
FMM5701X
18-28GHz
FCSI0598M200
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FMM5701X
Abstract: EUDYNA eudyna an
Text: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the
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FMM5701X
24GHz
24GHz
18-28GHz
FMM5701X
18-28GHz
EUDYNA
eudyna an
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NF C 32-070
Abstract: No abstract text available
Text: Power and control cables ÖLFLEX Wide range use halogen-free ÖLFLEX® CLASSIC 130 H VDE certified characteristics UNITRONIC® Info ▯ VDE certified ▯ Flame test acc. to NF C 32-070 categorie C1 Industrial machinery Air conditioning installations Stage technique
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10621p2l
Abstract: No abstract text available
Text: MIL-C-28840 901-028 901-028 Plug, 90°, Adapter Assembly PLUG, 90° ADAPTER ASSEMBLY MIL-C-28840/28 MIL-C-28840 HOW TO ORDER: GLENAIR P/N: 901-028 MILITARY P/N: M28840/28 3 NF C 25 G 1 1 B B BASIC PART NUMBER CLASS CODE SEE MIL-C-28840 SHELL SIZE (TABLE I)
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MIL-C-28840/28
MIL-C-28840
M28840/28
MIL-C-28840
MIL-C-28840)
M2840/16
10621p2l
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dual-gate YB
Abstract: 3SK318 SC-82AB Hitachi DSA00336
Text: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600 Z 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V
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3SK318
ADE-208-600
dual-gate YB
3SK318
SC-82AB
Hitachi DSA00336
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3SK319
Abstract: ADE-208-602 Hitachi DSA00395
Text: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602 Z 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V
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3SK319
ADE-208-602
3SK319
Hitachi DSA00395
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995-0149
Abstract: BF014D0102J CTZ3E capacitor 100 uF BF074D0105J W3A41A221KAT1A 995-0101 BF024D0334J 100-100-NPO 995-0128
Text: AVX Polyester Film Capacitors, Voltage Suppressors, Chip Capacitors and Cap Arrays Visit AVXÕs Website at www.avxcorp.com BF Series Film Radial Leads General Characteristics Climactic Category: 55/100/56 Ñ performance class 2. Capacitance Range: CR 1 nF to 2.2 µF E12 . Tolerances On CR:
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BF014E0333J--100
BF014D0473J--63
BF014E0473J--100
BF014D0683J--63
BF014E0683J--100
BF014E0124J--100
BF014D0104J--63
BF014E0104J--100
BF014D0154J--63
BF014D0224J--63
995-0149
BF014D0102J
CTZ3E
capacitor 100 uF
BF074D0105J
W3A41A221KAT1A
995-0101
BF024D0334J
100-100-NPO
995-0128
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bo 139
Abstract: pc 817 2SC5545 d 434 Hitachi DSA00235
Text: 2SC5545 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-746 Z 1st. Edition Jan. 1999 Features • Excellent inter modulation characteristic • High power gain and low noise figure ; PG=16dB typ. , NF=1.1dB typ. at f=900MHz Outline MPAK-4 2 3
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2SC5545
ADE-208-746
900MHz
bo 139
pc 817
2SC5545
d 434
Hitachi DSA00235
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HITEC 623
Abstract: Hitachi DSA002752
Text: 2SC5545 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-746 Z 1st. Edition Jan. 1, 1999 Features • Excellent inter modulation characteristic • High power gain and low noise figure ; PG=16dB typ. , NF=1.1dB typ. at f=900MHz Outline MPAK-4
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2SC5545
ADE-208-746
900MHz
HITEC 623
Hitachi DSA002752
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marking code g1s
Abstract: 3SK317 SC-82AB Hitachi DSA00240
Text: 3SK317 Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-778 Z 1st. Edition Mar. 1999 Features • Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) • High power gain characteristics ; (PG = 27.6 dB typ. at f = 200 MHz) Outline
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3SK317
ADE-208-778
marking code g1s
3SK317
SC-82AB
Hitachi DSA00240
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Hitachi DSA002714
Abstract: No abstract text available
Text: 3SK317 Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-778 Z 1st. Edition March 1, 1999 Features • Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) • High power gain characteristics ; (PG = 27.6 dB typ. at f = 200 MHz)
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3SK317
ADE-208-778
Hitachi DSA002714
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HELA-10B
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Amplifier - HELA-10B Amplifier print this page HELA-10B Frequency MHz fL - fU Dynamic VSWR DC Power Thermal Range resistance Output Input NF IP3 CurØjc Typ. In Out Min. Typ. Max. 1 dB Min. (no dB dBm rent Volt(V. °C/W
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HELA-10B
HELA-10B
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Hitachi DSA002759
Abstract: No abstract text available
Text: 3SK317 Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-778 Z 1st. Edition Mar. 1999 Features • Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) • High power gain characteristics ; (PG = 27.6 dB typ. at f = 200 MHz) Outline
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3SK317
ADE-208-778
Hitachi DSA002759
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Untitled
Abstract: No abstract text available
Text: EMI FILTER FOR INVERTERS SERIES INTRODUCTIONS COMPONENTS PART NO. Cx1 uF Cx2(uF) Cy(nF ) 16DRT1W3A 1.0 0.68 4.7 2.2 1.0 10 * 30DRT1W3 * UL APPROVED L(mH) Lg(uH) 1.7 32 2.2 - 1. Applications: Electric equipment, UPS, machine tool, copy machine, automation equipment, robot, AC motor drive
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16DRT1W3A
30DRT1W3
250VAC
50/60Hz
50TDS1W1
028x0
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Untitled
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Amplifier - HELA-10C Amplifier print this page HELA-10C Frequency MHz fL - fU Dynamic VSWR DC Power Thermal Range resistance Output Input NF IP3 CurØjc Typ. In Out Min. Typ. Max. 1 dB Min. (no dB dBm rent Volt(V. °C/W
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HELA-10C
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HITEC 527
Abstract: ZO 103 zo 607 MA transistor zo 607 zo 103 ma 2SC4994 DSA003635
Text: 2SC4994 Silicon NPN Epitaxial ADE-208-012 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10.5 GHz Typ • High gain, low noise figure PG = 17.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline CMPAK–4 2
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2SC4994
ADE-208-012
HITEC 527
ZO 103
zo 607 MA
transistor zo 607
zo 103 ma
2SC4994
DSA003635
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Untitled
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Amplifier - HELA-10A Amplifier print this page HELA-10A Frequency MHz fL - fU Dynamic VSWR DC Power Thermal Range resistance Output Input NF IP3 CurØjc Typ. In Out Min. Typ. Max. 1 dB Min. (no dB dBm rent Volt(V. °C/W
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HELA-10A
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Untitled
Abstract: No abstract text available
Text: TGA2614-SM S-Band High Gain LNA Applications • Commercial and Military Radar • Satellite Communications QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 2.7 – 3.8 GHz NF: 1.2 dB SS Gain: 17 dB OTOI: 33 dBm P1db: 19 dBm Psat: 20 dBm
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TGA2614-SM
TGA2614-SM
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lg r40
Abstract: 21TDT1W4 30DRT1W3 50TDS1W1
Text: EMI FILTER FOR INVERTERS SERIES INTRODUCTIONS COMPONENTS PART NO. Cx1 uF Cx2 (uF) Cy (nF) 16DRT1W3A 1.0 0.68 4.7 *30DRT1W3 2.2 1.0 10 *UL APPROVED L (mH) 1.7 2.2 Lg (uH) 32 - 1. Applications: Electric equipment, UPS, machine tool, copy machine, automation equipment, robot, AC motor drive
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16DRT1W3A
30DRT1W3
250VAC
50/60Hz
10TDT1W4/10TDT1W4S
20/21TDT1W4
10TDT1W4
lg r40
21TDT1W4
30DRT1W3
50TDS1W1
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2sk991
Abstract: 2SK9 ASGA 2sk99
Text: MOS M O S Field Effect P ow er Transistor N - ^ * ; i " N or7— M O S FET I i f f l mm 2SK991 ii, Nf-^*;w^i?'"o,7- M 0 S FET T*. 5 V * « * I C <nf t * tw J : & i £ K ï f t * * » T f é ì ' M x ^ y f > ^ x T O : mm t t . 4.8 MAX. -1.3±0.2 y t '/ ' f
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2SK991
2SK991
2SK9
ASGA
2sk99
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910-240
Abstract: 2702141
Text: Single - Turret Standoffs ADVANCED INTERCONNECTIONS 5 Energy Way, P.O. Box 1342, West Warwick, Rt 02893 • Tel. 401 -823-5200 • FAX 401-823-8723 • TWX 9102403454 EMC*Product "STS" Series o Plating: r° nf *14: 400u." Tin terminal, 200u" Cadmium Chromate base/eyelet
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200ii"
400jj.
400ji"
QQ-B-626
MIL-M-14F
910-240
2702141
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