NE71300
Abstract: NE71300L NE71300M NE71300N 0460 lg 8838
Text: LOW NOISE L TO K-BAND GaAs MESFET NE71300 • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz Noise Figure, NF dB • HIGH ASSOCIATED GAIN GA = 9.5 dB TYP at f = 12 GHz • LG = 0.3 µm, WG = 280 µm • EPITAXIAL TECHNOLOGY • LOW PHASE NOISE DESCRIPTION
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NE71300
NE71300
6e-12
15e-12
5e-12
04e-12
24-Hour
NE71300L
NE71300M
NE71300N
0460
lg 8838
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Untitled
Abstract: No abstract text available
Text: LOW NOISE L TO K-BAND GaAs MESFET NE71300 3 24 • HIGH ASSOCIATED GAIN GA = 9.5 dB TYP at f = 12 GHz 2.5 21 Noise Figure, NF dB • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • LG = 0.3 µm, WG = 280 µm • EPITAXIAL TECHNOLOGY • LOW PHASE NOISE
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NE71300
NE71300
NE71300N
NE71300M
NE71300L
24-Hour
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73E-12
Abstract: 20771 NE71300 NE71300L NE71300M NE71300N lg 8838 LS 7642
Text: LOW NOISE L TO K-BAND GaAs MESFET NE71300 3 24 • HIGH ASSOCIATED GAIN GA = 9.5 dB TYP at f = 12 GHz 2.5 21 Noise Figure, NF dB • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • LG = 0.3 µm, WG = 280 µm • EPITAXIAL TECHNOLOGY • LOW PHASE NOISE
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NE71300
NE71300
6e-12
15e-12
5e-12
04e-12
24-Hour
73E-12
20771
NE71300L
NE71300M
NE71300N
lg 8838
LS 7642
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2SC3772
Abstract: 327f 1433p
Text: 2SC3772 SPICE PARAMETERS HIGH-FREQUENCY TRANSISTOR model : Gummel-Poon Parameter Value IS 739a BF 110 NF 1.0092 VAF 10 IKF 240m ISE 14.33p NE 2.734 BR 6 NR 1.0095 VAR 4 10m IKR ISC 3.27f NC 1.7 RB 15 IRB 86u RBM 1 RE 1.15 RC 1.62 XTB EG 1.11 XTI 3 CJE 780f
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2SC3772
2SC3772
327f
1433p
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FSU01LG
Abstract: Eudyna Devices
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package
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FSU01LG
FSU01LG
Eudyna Devices
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FSU01LG
Abstract: No abstract text available
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package
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FSU01LG
FSU01LG
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FSU01LG
Abstract: No abstract text available
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package
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FSU01LG
FSU01LG
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fujitsu GHz gaas fet
Abstract: fujitsu gaas fet FSU01LG
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package
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FSU01LG
FSU01LG
FCSI0598M200
fujitsu GHz gaas fet
fujitsu gaas fet
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FSU01LG
Abstract: No abstract text available
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package
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FSU01LG
FSU01LG
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452 fet
Abstract: FSU01LG fujitsu GHz gaas fet fujitsu gaas fet
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=12GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package
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FSU01LG
12GHz
FSU01LG
FCSI0598M200
452 fet
fujitsu GHz gaas fet
fujitsu gaas fet
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npn UHF transistor 2N5179
Abstract: No abstract text available
Text: 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB max @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 • 1 Characterized with S-Parameters
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2N5179
npn UHF transistor 2N5179
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semikron SKHI 21
Abstract: semikron SKpc 22 SKHI 22 MOLEX 90030 semikron SKpc semikron SKpc 21/ 2 elko skpc 21 SKHI21
Text: 14.1 SEMIDRIVER -Zubehör für SEMIDRIVER® SKHI 21 und SKHI 22 Leiterplatte SKPC 2006 1) Empfohlene Bestückungsliste Bezeichnung rad. ELKO 10.47 µF / 35 V • Glasfaserverstärktes Kunstharzmaterial (Epoxy) CCEBOT Polystyrol Kond. 0,33 nF > 25 V • ohne Einzelteile
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2N5179
Abstract: npn UHF transistor 2N5179 rf power amplifier transistor with s-parameters
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10
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2N5179
2N5179
npn UHF transistor 2N5179
rf power amplifier transistor with s-parameters
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Untitled
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10
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2N5179
2N5179
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Untitled
Abstract: No abstract text available
Text: F-207 2 mm nf PTT, PTF SERIES ESS SPECIFICATIONS ROW OPTION For complete specifications see www.samtec.com?PTT or www.samtec.com?PTF Insulator Material: Black Liquid Crystal t o Polymer Contact Material: Phosphor Bronze Plating: Au or Sn over 50p" 1,27pm Ni
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F-207
2-26904858-Fax:
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Untitled
Abstract: No abstract text available
Text: F-205-1 2 mm SPECIFICATIONS For complete specifications see www.samtec.com?PTT or www.samtec.com?PTF Insulator Material: Black Liquid Crystal Polymer Contact Material: nf ESS Mates with: PTF, ESQT, PTHF, SQW, SQT, YTS, YTQ.YTE ROW OPTION OPTION - S o r -S M
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F-205-1
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Untitled
Abstract: No abstract text available
Text: F-206-1 2 mm ESS nf PTT, PTF SERIES SPECIFICATIONS ROW OPTION For complete specifications see www.samtec.com?PTT or www.samtec.com?PTF Insulator Material: Black Liquid Crystal t o Polymer Contact Material: Phosphor Bronze Plating: Au or Sn over 50p" 1,27pm Ni
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F-206-1
ProG37
2-26904858-F
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Untitled
Abstract: No abstract text available
Text: F-207 5am O NE PIECE LOW PRO FILE «f, s=nF! SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com?SEL Insulator Material: Liquid Crystal Polymer Contact Material: Phosphor Bronze Plating: Au over 50p“ 1,27pm Ni Current Rating: 1A @ 80°C
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F-207
60VAC
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fujitsu gaas fet
Abstract: FSU01LG
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P ^ b = 20.0dBm Typ. • High Associated Gain: G ^ b = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@ f=12G Hz • Low Bias Conditions: V d s =3V, 10mA • Cost Effective Hermetic Microstrip Package
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FSU01LG
190dB
12GHz
FSU01LG
FCSI0598M200
fujitsu gaas fet
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2sk192
Abstract: 2SK192A BL 2SK192A
Text: TOSHIBA 2SK192A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 SK19 2A FM TUNER APPLICATIONS U nit in mm VHF BAND AM PLIFIER APPLICATIONS 4.2M AX. • High Power Gain : Gpg = 24dB Typ. (f = 100MHz) • Low Noise Figure : NF = 1.8dB (Typ.) (f= 100MHz)
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2SK192A
100MHz)
55MAX.
100MHz
2sk192
2SK192A BL
2SK192A
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Untitled
Abstract: No abstract text available
Text: F-206-1 ONE P IEC E LOW PRO FILE «f, s=nF! SPECIFICATIONS For complete specifications and recommended P C B layouts see www.samtec.com?SEL Insulator Material: Liquid Crystal Polymer Contact Material: Phosphor Bronze Plating: Au over 50p“ 1,27pm Ni Current Rating: 1A @ 80°C
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F-206-1
60VAC
852-26904858-Fax:
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NEC 3536
Abstract: No abstract text available
Text: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz •
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NE76118
NE76118
NE76118-T1
NE76118-T2
NEC 3536
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FDS 4800
Abstract: smd transistor 9f8 smd marking 9T smd diode code 9T smd transistor H7 BUZ111SL TRANSISTOR SMD MARKING CODE BS s SMD TRANSISTOR MARKING 45B BUZ111 D133457
Text: BUZ 111SL I nf ineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance f l DS on 0.007 n A 80 t> Continuous drain current • Avalanche rated 55 V • Logic Level
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111SL
BUZ111SL
P-T0220-3-1
Q67040-S4002-A2
E3045A
P-T0263-3-2
Q67040-S4002-A6
E3045
FDS 4800
smd transistor 9f8
smd marking 9T
smd diode code 9T
smd transistor H7
TRANSISTOR SMD MARKING CODE BS s
SMD TRANSISTOR MARKING 45B
BUZ111
D133457
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Untitled
Abstract: No abstract text available
Text: VEB F U N K W E R K ERFURT EF 11 REGELBARE TECHNISCHE HF-, ZF-, NF-PENTODE DATEN Heizung: Heizspannung Uf 6,3 V Heizstrom lf 200 mA Allgemeine statische Werte: Anodenspannung Ua 250/ 200/100 V Schirm gitterspannung U ?2 100 V G ittervorspannung U g1 A n odenstroin
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/V/4/26
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