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Glenair Inc 667-474NF17T1J Circular MIL Spec Tools, Hardware & Accessories 6+ start 3 weeks AOC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	667-474NF17T1J					1 $1325.85 10 $741.85 100 $741.85 1000 $741.85 10000 $741.85	Get Quote
Glenair Inc 667-475NF18T1J Circular MIL Spec Tools, Hardware & Accessories 6+ start 3 weeks AOC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	667-475NF18T1J					1 $1325.85 10 $741.85 100 $741.85 1000 $741.85 10000 $741.85	Get Quote
Glenair Inc 667-475NF21T1J Circular MIL Spec Tools, Hardware & Accessories 6+ start 6 wks
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	667-475NF21T1J					1 $1443.4 10 $1209.75 100 $1209.75 1000 $1209.75 10000 $1209.75	Get Quote
Glenair Inc 447HJ747NF1706 Circular MIL Spec Backshells ACCESSORIES - BANDING/CRIMP ADAPTER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	447HJ747NF1706					1 - 10 $720.18 100 $720.18 1000 $720.18 10000 $720.18	Get Quote
Glenair Inc 447HZ747NF1907 Circular MIL Spec Backshells ACCESSORIES - BANDING/CRIMP ADAPTER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	447HZ747NF1907					1 - 10 $546.32 100 $546.32 1000 $546.32 10000 $546.32	Get Quote

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NF 747 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: COND. CERAMIQUE POUR ALIMENTATIONS A DECOUPAGE H.F. CLASSE 1 CERAMIC CAPACITORS FOR H.F. SWITCHING POWER SUPPLIES CLASS 1 102 ⌱ eff. A 102 ⌱ eff. (A) 102 5 5 5 2 2 2 10 10 10 5 5 5 2 2 2 1 1 1 5 5 5 2 0,1 5 102 CEC 53 68 nF 220 nF 470 nF CEC 55 180 nF	Original	F-67441	PDF
fujitsu gaas fet Abstract: fujitsu GHz gaas fet Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package	Original	FSU02LG FSU02LG FCSI0598M200 fujitsu gaas fet fujitsu GHz gaas fet	PDF
FSU02LG Abstract: Eudyna Devices FUJITSU RF 053 DC bias of gaas FET Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package	Original	FSU02LG FSU02LG Dissipa4888 Eudyna Devices FUJITSU RF 053 DC bias of gaas FET	PDF
Untitled Abstract: No abstract text available Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package	Original	FSU02LG FSU02LG Eud49	PDF
1084 fet Abstract: fujitsu gaas fet fujitsu GHz gaas fet Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package	Original	FSU02LG FSU02LG FCSI0598M200 1084 fet fujitsu gaas fet fujitsu GHz gaas fet	PDF
5503 FET Abstract: 5503 GM FSU02LG FSU02 Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package	Original	FSU02LG FSU02LG 5503 FET 5503 GM FSU02	PDF
FSU02LG Abstract: v 4836 fujitsu GHz gaas fet Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package	Original	FSU02LG FSU02LG FCSI0598M200 v 4836 fujitsu GHz gaas fet	PDF
Untitled Abstract: No abstract text available Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package	Original	FSU02LG FSU02LG	PDF
747d Abstract: 747D812M035AA2A Text: 747D Series Ⅲ Large Can Ⅲ Screw Terminal Ⅲ High Frequency Applications Ⅲ Low Impedance Ⅲ ‫؁‬55؇C to ‫؀‬105؇C Temperature Range Actual Size The 747D series offers a low impedance over an extended temperature range of ‫؁‬55؇C to ‫؀‬105؇C.	Original	35VDC. Nomina47D333M025AC2A 747D383M025AD2A 747D443M025AE2A 747D493M025AF2A 747D293M025BA2A 747D353M025BM2A 747D463M025BB2A 747D583M025BL2A 747D703M025BC2A 747d 747D812M035AA2A	PDF
747d Abstract: 747D443M035BC2A 747D134M016BD2A 747D812M035AA2A uA747 United Chemi-Con catalogue 747D103 747D123M025AA2A 747D103M025AY2A AD #0953 Text: 747D Series Ⅲ Large Can Ⅲ Screw Terminal Ⅲ High Frequency Applications Ⅲ Low Impedance Ⅲ ‫؁‬55؇C to ‫؀‬105؇C Temperature Range Actual Size The 747D series offers a low impedance over an extended temperature range of ‫؁‬55؇C to ‫؀‬105؇C.	Original	-105C 747d 747D443M035BC2A 747D134M016BD2A 747D812M035AA2A uA747 United Chemi-Con catalogue 747D103 747D123M025AA2A 747D103M025AY2A AD #0953	PDF
2N6617 Abstract: HXTR-6101 HXTR-6102 HXTR6102 2N6617 S parameters HPAC-70GT transistor HXTR-6101 Text: COMPONENTS Features 2JÏ8 ¡0.078 1.57l0.062"f " BIPOLAR LOW NOISE FIGURE 2.8dB at 4GHz, Typical 2N6617) 2.5dB at 4GHz, Typical (HXTR-6102) TRANSISTORS 2N6617 (HXTR-6101) HXTR-6102 LOW NOISE TRANSISTOR H E W L E T T ^ PACKARD HIGH GAIN 9.0dB Typical Gain at NF Bias Conditions	OCR Scan	2N66170 HXTR-6101) HXTR-6102 2N6617) HXTR-6102) 2N6617 HPAC-70GT, MIL-S-19500 MIL-STD-750/883. 2N6617 HXTR-6101 HXTR-6102 HXTR6102 2N6617 S parameters HPAC-70GT transistor HXTR-6101	PDF
Untitled Abstract: No abstract text available Text: BUZ 172 I nf ineon tachnologies SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type Vds b flDS on Package Ordering Code BUZ 172 -100 V -5.5 A 0.6 £2 TO-220 AB C67078-S1451-A2 Maximum Ratings Parameter Symbol Continuous drain current	OCR Scan	O-220 C67078-S1451-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T	PDF
NEC 3536 Abstract: No abstract text available Text: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz •	OCR Scan	NE76118 NE76118 NE76118-T1 NE76118-T2 NEC 3536	PDF
fujitsu gaas fet Abstract: FSU02LG FUJITSU RF 053 Text: FSU02LG General Purpose GaAs FET FEATURES • • • • • • High Output Power: P ^ b = 23.0dBm Typ. @2GHz High Associated Gain: G ^ b = 17.0dB (Typ.)@2GHz Low Noise Figure: NF=1,5dB (Typ.)@ f=2G Hz Low Bias Conditions: VQg=3V, 20mA Cost Effective Hermetic Microstrip Package	OCR Scan	FSU02LG FSU02LG FCSI0598M200 fujitsu gaas fet FUJITSU RF 053	PDF

063 793 Abstract: transistor v63 Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain	OCR Scan	NE34018 NE34018 WS60-00-1 IR30-00-3 063 793 transistor v63	PDF
NE32184A Abstract: NE32100 NE32183A nec ne3 INE32184A Text: NE C/ CALIFORNIA 3QE D tiMSTMlM Ü0Ü20SM fl • NECC 7 r .j/-z r r ULTRA LOW NOISE K-BAND HETRO JUNCTION FET NE32100 NE32183A NE32184A OUTLINE DIMENSIONS FEATURES • SUPER LOW NOISE FIGURE: NF = 1.0 d B T Y P a tf = 12 GHz NE32100 CHIP • HIGH ASSOCIATED GAIN:	OCR Scan	bM27M14 0G205M NE32100 NE32183A NE32184A NE321 associat105 34-6393/FAX S88-0279 NOT1CE-1848 NE32184A NE32100 NE32183A nec ne3 INE32184A	PDF
NEC K 2500 Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905 Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz	OCR Scan	NE34018 NE34018 NE34018-T1 NE34018-T2 NEC K 2500 OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905	PDF
817 CN Abstract: No abstract text available Text: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION N E76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • 2 . 1± 0.2 Low noise figure 1.25±0.1 NF = 0.8 dB TYP. at f = 2 GHz	OCR Scan	NE76118 E76118 NE76118-T1 NE76118-T2er IR30-00-2 817 CN	PDF
NE76084 Abstract: No abstract text available Text: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NE76084 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz < HIGH ASSOCIATED GAIN Ga = 9 dB TYP at f = 12 GHz • L g = 0.3 im , W g = 280 Jim . LOW COST METAL/CERAMIC PACKAGE	OCR Scan	NE76084 NE76084 GHz21 lS211 NE76084S NE76084-T1 00b5511	PDF
Hewlett-Packard application note 967 Abstract: HPAC-70GT 2N6617 HXTR-6102 equivalent of transistor D 2331 hewlett packard application note 972 2N6617 S parameters TRANSISTOR noise figure measurements application HXTR-6101 ghz transistor Text: COMPONENTS Features 2 JÏ8 ¡0.078 1.5 7 l0 .0 6 2 " f " BIPOLAR LOW NOISE FIGURE 2.8dB at 4GHz, Typical 2N6617) 2.5dB at 4GHz, Typical (HXTR-6102) TRANSISTORS 2N6617 (HXTR-6101) HXTR-6102 LOW NOISE TRANSISTOR H E W L E T T ^ PACKARD HIGH GAIN 9.0dB Typical Gain at NF Bias Conditions	OCR Scan	2N66170 HXTR-6101) HXTR-6102 2N6617) HXTR-6102) 2N6617 HPAC-70GT, MIL-S-19500 MIL-STD-750/883. Hewlett-Packard application note 967 HPAC-70GT 2N6617 HXTR-6102 equivalent of transistor D 2331 hewlett packard application note 972 2N6617 S parameters TRANSISTOR noise figure measurements application HXTR-6101 ghz transistor	PDF
metal film fused resistor 47 Abstract: 25CC EL2045C EL2045CN EL2045CS QCX0002 000H4 Text: HIGH perfo rm a n ce ana & s ìn tegsateo cmcufTS EL2045C Low-Power 100 MHz Gain-nf-2 Stable Operational A m plifier F e a tu r e s G e n e ra l D escrip tio n • 100 M Hz gain-bandwidth product • Gain-of-2 stable T he E L 2045C is a high speed, low power, low cost monolithic	OCR Scan	EL2045C 150ft 1000ft 500ft metal film fused resistor 47 25CC EL2045C EL2045CN EL2045CS QCX0002 000H4	PDF
HT 1000-4 power amplifier Abstract: mip 836 ic mip 836 schematic weigh scale AD7730 circuit integrate TB 1226 CN wheelchair motor 24v SCHEMATIC ad7730 1000 watt RMS professional audio power amplifier schematic Circuit ad7730 pcb circuit example electric bicycle dc motor control 36v Text: NEW PRODUCT APPLICATIONS - 1 9 9 8 spring edition BOOST vi n O ^ SW ITC H V\|N +7V TO +24V ADP3050-5 O V 0UT +5V @ 1A BIAS ON FB GND COMP 1 22\|xF 4 k il 1 nF 1 0 0 jlF * V OUT V\|N C - Q1 -O h anyCAP LDO TOPOLOGY - \| - C COMP N O N IN V E R T IN G W ID E B A N D	OCR Scan	ADP3050-5 ADP3603/4/5 ADMC300 ADMC330 ADMC331 HT 1000-4 power amplifier mip 836 ic mip 836 schematic weigh scale AD7730 circuit integrate TB 1226 CN wheelchair motor 24v SCHEMATIC ad7730 1000 watt RMS professional audio power amplifier schematic Circuit ad7730 pcb circuit example electric bicycle dc motor control 36v	PDF
Untitled Abstract: No abstract text available Text: F-206-1 2 mm ESS nf PTT, PTF SERIES SPECIFICATIONS ROW OPTION For co m p le te specifications se e w w w .sam tec.com ?P T T o r w w w .sam tec.com ?P TF In s u la to r M a te ria l: B lack Liquid C rystal t o Polym er C o n ta c t M a te ria l: P ho sp ho r Bronze	OCR Scan	F-206-1 689CG37 852-26904858-Fax: 747-Fax:	PDF
Untitled Abstract: No abstract text available Text: Metallized Polypropylene Film Capacitors MFP in Plastic Case MFP pulse capacitors w ith highest possible contact reliability B 32 682 . B 32 686 ; t Construction • • • • Dielectric: polypropylene Film m etallized on one side and metal foils internally connected in series	OCR Scan	rms500 fl235b05 fl535bO CI074R00	PDF

NF 747 Search Results

NF 747 Price and Stock

Glenair Inc 667-474NF17T1J

Glenair Inc 667-475NF18T1J

Glenair Inc 667-475NF21T1J

Glenair Inc 447HJ747NF1706

Glenair Inc 447HZ747NF1907

NF 747 Datasheets Context Search

Untitled

fujitsu gaas fet

FSU02LG

Untitled

1084 fet

5503 FET

FSU02LG

Untitled

747d

747d

2N6617

Untitled

NEC 3536

fujitsu gaas fet

063 793

NE32184A

NEC K 2500

817 CN

NE76084

Hewlett-Packard application note 967

metal film fused resistor 47

HT 1000-4 power amplifier

Untitled

Untitled