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    NF TRANSISTOR Search Results

    NF TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor SD335

    Abstract: SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339
    Text: RFT Beschreibung Si-npn-Planar-Epitaxie, TO39 Si-npn-Planar-EpitaxieSC116 NF-Transistor Si-npn-Planar-EpitaxieSC117 NF-Transistor Si-npn-Planar-EpitaxieSC118 NF-Transistor Si-npn-Planar-EpitaxieSC119 NF-Transistor Si-npn-Planar-EpitaxieSC236 NF-Transistor für Vorund Treiberstufen


    Original     		PDF Si-npn-Planar-EpitaxieSC116 Si-npn-Planar-EpitaxieSC117 Si-npn-Planar-EpitaxieSC118 Si-npn-Planar-EpitaxieSC119 Si-npn-Planar-EpitaxieSC236 Si-npn-Planar-EpitaxieSC237 Si-npn-Planar-EpitaxieSC238 VorSC239 Si-pnp-Planar-EpitaxieSC307 Si-pnp-Planar-EpitaxieSC308 transistor SD335 SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339

    Halbleiterbauelemente DDR

    Abstract: elektronik DDR Leistungsdiode Halbleiter-Bauelemente DDR Hallgenerator CSSR silizium diode
    Text: Tunneldiode HF-Transistor Diode Kapazitätsdiode NF-Transistor NF-Leistungstransistor Ptot >1W Bauelement 2.Element Hall-Feldsonde CSSR: Silizium Hall-Generator CSSR: Galliumarsenidphosphid HF-Leistungstransistor Hall-Generator DDR: MIS-Transistor strahlungsempfindliches


    Original     		PDF

    IC 431

    Abstract: 2SC5277A SANYO DC 303 ITR08213 ITR08215 ITR08216 ITR08217 120d-22
    Text: 2SC5277A Ordering number : ENA1075 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5277A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • • Low-noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz).


    Original     		PDF 2SC5277A ENA1075 S21e2 A1075-6/6 IC 431 2SC5277A SANYO DC 303 ITR08213 ITR08215 ITR08216 ITR08217 120d-22

    2SC5490

    Abstract: ENN6289 TA 8644
    Text: Ordering number:ENN6289 NPN Epitaxial Planar Silicon Transistor 2SC5490 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz).


    Original     		PDF ENN6289 2SC5490 S21e2 11GHz 2SC5490] 2SC5490 ENN6289 TA 8644

    Untitled

    Abstract: No abstract text available
    Text: 2SC5277A Ordering number : ENA1075A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5277A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz)


    Original     		PDF 2SC5277A ENA1075A A1075-8/8

    a1091 transistor

    Abstract: transistor a1091 a1091* transistor A1091 2SC5490A
    Text: 2SC5490A Ordering number : ENA1091 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5490A UHF to S-Band Low-Noise Amplifier Applications Features • • • • • • Low-noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz).


    Original     		PDF 2SC5490A ENA1091 S21e2 A1091-5/5 a1091 transistor transistor a1091 a1091* transistor A1091 2SC5490A

    Untitled

    Abstract: No abstract text available
    Text: 2SC5277A Ordering number : ENA1075A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5277A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz)


    Original     		PDF 2SC5277A ENA1075A A1075-8/8

    Untitled

    Abstract: No abstract text available
    Text: 2SC5490A Ordering number : ENA1091A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5490A UHF to S-Band Low-Noise Amplifier Applications Features • • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz)


    Original     		PDF 2SC5490A ENA1091A A1091-7/7

    ce 2826 ic

    Abstract: IC 4305 2SC5504 TA1703
    Text: Ordering number:ENN6223 NPN Epitaxial Planar Silicon Transistor 2SC5504 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : ⏐S21e⏐2=11dB typ (f=1GHz).


    Original     		PDF ENN6223 2SC5504 S21e2 11GHz 2SC5504] ce 2826 ic IC 4305 2SC5504 TA1703

    TA1703

    Abstract: ce 2826 ic TA17-03 2SC5504 IC163 TA-1703 2SC550
    Text: Ordering number:ENN6223 NPN Epitaxial Planar Silicon Transistor 2SC5504 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=11dB typ (f=1GHz).


    Original     		PDF ENN6223 2SC5504 S21e2 11GHz 2SC5504] TA1703 ce 2826 ic TA17-03 2SC5504 IC163 TA-1703 2SC550

    Untitled

    Abstract: No abstract text available
    Text: 2SC5245A Ordering number : ENA1074 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5245A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • Low-noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). High gain


    Original     		PDF ENA1074 2SC5245A S21e2 A1074-6/6

    A1074

    Abstract: IM 383 IC 2SC5245A SANYO DC 303 ITR07984 ITR07986 ITR07987 ITR07990
    Text: 2SC5245A Ordering number : ENA1074 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5245A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • Low-noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). High gain


    Original     		PDF 2SC5245A ENA1074 S21e2 A1074-6/6 A1074 IM 383 IC 2SC5245A SANYO DC 303 ITR07984 ITR07986 ITR07987 ITR07990

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN5185 NPN Epitaxial Planar Silicon Transistor 2SC5275 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=10dB typ (f=1.5GHz).


    Original     		PDF ENN5185 2SC5275 S21e2 11GHz 2018B 2SC5275]

    2SC3268

    Abstract: No abstract text available
    Text: 2SC3268 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3268 VHF~UHF Band Low Noise Amplifier Applications • NF = 1.7dB, |S21e|2 = 15.0dB f = 500 MHz · NF = 2dB, |S21e|2 = 9.5dB (f = 1000 MHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SC3268 2SC3268

    2SC5245

    Abstract: ITR07984 ITR07985 ITR07986 ITR07987 51841 IC163 sanyo 1042
    Text: Ordering number:ENN5184A NPN Epitaxial Planar Silicon Transistor 2SC5245 UHF to S-Band Low-Noise Amplifier, OSC Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz).


    Original     		PDF ENN5184A 2SC5245 S21e2 11GHz 2059B 2SC5245] 2SC5245 ITR07984 ITR07985 ITR07986 ITR07987 51841 IC163 sanyo 1042

    2SC5276

    Abstract: ITR08032 ITR08033 ITR08034 ITR08035 ITR08036
    Text: Ordering number:ENN5186 NPN Epitaxial Planar Silicon Transistor 2SC5276 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : ⏐S21e⏐2=11dB typ (f=1.5GHz).


    Original     		PDF ENN5186 2SC5276 S21e2 11GHz 2SC5276] 2SC5276 ITR08032 ITR08033 ITR08034 ITR08035 ITR08036

    transistor zo 607

    Abstract: ZO 607 MA 2SC5275 ITR08019 ITR08020 ITR08021 ITR08022 ZO 607 MA 135 transistor 51854
    Text: Ordering number:ENN5185 NPN Epitaxial Planar Silicon Transistor 2SC5275 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz).


    Original     		PDF ENN5185 2SC5275 S21e2 11GHz 2018B 2SC5275] transistor zo 607 ZO 607 MA 2SC5275 ITR08019 ITR08020 ITR08021 ITR08022 ZO 607 MA 135 transistor 51854

    uPA63

    Abstract: UPA827TF UPA831TF NE685
    Text: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening


    OCR Scan     		PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T URA810T UPA811T UPA812T uPA63 UPA827TF UPA831TF NE685

    Untitled

    Abstract: No abstract text available
    Text: KSC2753 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE AMPLIFIER FOR VHF/UHF High fT = 5GHz NF = 1.5dB, |S218|: = 16dB <f = 500MHz NF = 1.7dB, |S21e|' = 10.5dB 1= 1000MHz) ABSOLUTE MAXIMUM RATINGS Characteristics Collector Base Voltage Collector Emitter Voltage


    OCR Scan     		PDF KSC2753 500MHz) 1000MHz) 1000MHz Cjtj4142 002476b

    DC 0509

    Abstract: 2SC3268
    Text: TOSHIBA_ TOSHIBA TRANSISTOR 2SC3268 SILICON NPN EPITAXIAL PLANAR TYPE 2SC3268 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. 1.6 MAX. 4.6 MAX. NF=1.7dB, |S2ie l2= 15.0dB f=500MHz NF = 2dB, |S2iç|2= 9.5dB(f=1000MHz)


    OCR Scan     		PDF 2SC3268 500MHz) 1000MHz) 961001EAA2' 50X50X0 30X4-0 DC 0509 2SC3268

    2SC2753

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2753 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2753 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION. 5.1 M AX. , • . Low Noise Figure, High Gain NF = 1.5dB, |S2lel2= 16dB f = 500MHz NF = 1.7dB, |S2lel2= 10.5dB (f = 1GHz)


    OCR Scan     		PDF 2SC2753 500MHz) 55MAX. SC-43 961001EAA2' 2SC2753

    transistor Bc 540

    Abstract: tfk 540 TFK 212 TRANSISTOR BC 212 bc 212 BC212 BC 540 TRANSISTOR
    Text: SHi2:ium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and driver stages Besondere Merkmale: Features: • • • • Verlustleistung 300 mW • In G ruppen so rtie rt


    OCR Scan     		PDF

    2N929

    Abstract: 2N930 929-2N
    Text: 2 N 929 • 2 N 930 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: Rauscharme NF-Verstärker Applications: Low noise AF am plifiers Besondere Merkmale: Features: • Besonders rauscharm bei kleinen Kollektorström en


    OCR Scan     		PDF

    2SC2753

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2753 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2753 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION. 5.1 MAX. , • . Low Noise Figure, High Gain NF = 1.5dB, |S2lel2 = 16dB f = 500MHz NF = 1.7dB, |S2lel2 = 10.5dB (f = 1GHz)


    OCR Scan     		PDF 2SC2753 500MHz) 55MAX. SC-43 2SC2753