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NGTB15N60S1 Price and Stock

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onsemi NGTB15N60S1EG IGBT 600V 30A 117W TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGTB15N60S1EG	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Verical	NGTB15N60S1EG		1,550		344	1 - 10 - 100 - 1000 $0.9864 10000 $0.9864	Buy Now
Rochester Electronics	NGTB15N60S1EG		1,584		1	1 $0.9283 10 $0.9283 100 $0.8726 1000 $0.7891 10000 $0.7891	Buy Now
Win Source Electronics	NGTB15N60S1EG		11,400			1 - 10 - 100 $1.2152 1000 $0.9874 10000 $0.9874	Buy Now

NGTB15N60S1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NGTB15N60S1EG		On Semiconductor	NGTB15 - TRANSISTOR IGBT, Insulated Gate BIP Transistor		Original	PDF

NGTB15N60S1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the	Original	PDF	NGTB15N60S1EG NGTB15N60S1E/D
15N60S1G Abstract: No abstract text available Text: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the	Original	PDF	NGTB15N60S1EG NGTB15N60S1E/D 15N60S1G
Untitled Abstract: No abstract text available Text: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the	Original	PDF	NGTB15N60S1EG NGTB15N60S1E/D
15N60 Abstract: NGTB15N60S1EG Text: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the	Original	PDF	NGTB15N60S1EG NGTB15N60S1E/D 15N60
NGTB15N60S1EG Abstract: 15N60S1G Text: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss. The	Original	PDF	NGTB15N60S1EG NGTB15N60S1E/D 15N60S1G
G15N60S1G Abstract: No abstract text available Text: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the	Original	PDF	NGTG15N60S1EG NGTG15N60S1E/D G15N60S1G
CECA Abstract: MS-2758 Text: 技术文章 MS-2758 利用数字隔离器技术增强工业电机控制性能作者：Dara O'Sullivan 系统工程师和Maurice Moroney (技术营销经理)，ADI公司隔离类型简介隔离用户及敏感电子部件是电机控制系统的重要考虑事	Original	PDF	MS-2758 MS-2576æ NGTB15N60S1EGï TA12881sc-0-11/14 CECA MS-2758
G15N60 Abstract: G15N60S1G NGTG15N60 g15N6 NGTG15N60S1EG 22W8 Text: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the	Original	PDF	NGTG15N60S1EG NGTG15N60S1E/D G15N60 G15N60S1G NGTG15N60 g15N6 22W8
Untitled Abstract: No abstract text available Text: AND9100/D Paralleling of IGBTs Introduction http://onsemi.com High power systems require the paralleling of IGBTs to handle loads well into the 10’s and sometimes the 100’s of kilowatts. Paralleled devices can be discrete packaged devices, or bare die assembled within a module. This is done	Original	PDF	AND9100/D
G15N60 Abstract: G15N60S1G NGTG15N60 NGTB15N60S1 Text: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss. The	Original	PDF	NGTG15N60S1EG NGTG15N60S1E/D G15N60 G15N60S1G NGTG15N60 NGTB15N60S1
G15N60S1G Abstract: No abstract text available Text: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the	Original	PDF	NGTG15N60S1EG NGTG15N60S1E/D G15N60S1G
G15N60 Abstract: NGTG15N60 G15N60S1G Text: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the	Original	PDF	NGTG15N60S1EG NGTG15N60S1E/D G15N60 NGTG15N60 G15N60S1G