Untitled
Abstract: No abstract text available
Text: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the
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NGTB15N60S1EG
NGTB15N60S1E/D
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15N60S1G
Abstract: No abstract text available
Text: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the
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NGTB15N60S1EG
NGTB15N60S1E/D
15N60S1G
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Untitled
Abstract: No abstract text available
Text: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the
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NGTB15N60S1EG
NGTB15N60S1E/D
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15N60
Abstract: NGTB15N60S1EG
Text: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the
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NGTB15N60S1EG
NGTB15N60S1E/D
15N60
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NGTB15N60S1EG
Abstract: 15N60S1G
Text: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss. The
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NGTB15N60S1EG
NGTB15N60S1E/D
15N60S1G
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G15N60S1G
Abstract: No abstract text available
Text: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the
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NGTG15N60S1EG
NGTG15N60S1E/D
G15N60S1G
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CECA
Abstract: MS-2758
Text: 技术文章 MS-2758 利用数字隔离器技术增强工业电 机控制性能 作者：Dara O'Sullivan 系统工程师 和Maurice Moroney (技术营销经理)，ADI公司 隔离类型简介 隔离用户及敏感电子部件是电机控制系统的重要考虑事
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MS-2758
MS-2576æ
NGTB15N60S1EGï
TA12881sc-0-11/14
CECA
MS-2758
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G15N60
Abstract: G15N60S1G NGTG15N60 g15N6 NGTG15N60S1EG 22W8
Text: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the
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NGTG15N60S1EG
NGTG15N60S1E/D
G15N60
G15N60S1G
NGTG15N60
g15N6
22W8
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G15N60S1G
Abstract: No abstract text available
Text: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the
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NGTG15N60S1EG
NGTG15N60S1E/D
G15N60S1G
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G15N60
Abstract: NGTG15N60 G15N60S1G
Text: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the
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NGTG15N60S1EG
NGTG15N60S1E/D
G15N60
NGTG15N60
G15N60S1G
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