ka band high power fet amplifier schematic
Abstract: No abstract text available
Text: 0.25-µm mmW pHEMT 2MI Process Data Sheet 4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR T-GATE ACTIVE REGION OHMIC METAL EXCEPT VIA SEMI-INSULATING GaAs SUBSTRATE VIA UNDER CAP 0.25-µm 2MI Process Cross Section General Description
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5SMY 12J1721
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1325-01 12 01 5SMY 12J1721 IGBT-Die VCE = 1700 V IC = 75 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage
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12J1721
CH-5600
5SMY 12J1721
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G200
Abstract: f 0952
Text: PTF 102028 18 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description The PTF 102028 is an 18–watt GOLDMOS FET intended for large signal amplifier applications 860 to 960 MHz. It operates with 55% efficiency and 15 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
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P4525-ND
P5182-ND
1-877-GOLDMOS
1522-PTF
G200
f 0952
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5082-0012
Abstract: hydrofluoric acid
Text: PIN Diode Chips for Hybrid MIC Switches/Attenuators Technical Data 5082-0001 5082-0012 Features • Low Series Resistance 0.8 Ω Typical • Nitride Passivated Outline 01B 5082-0001 ALL OTHER CHIPS D D X X Description These PIN diode chips are silicon dioxide or nitride passivated. The
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5965-8880E
5082-0012
hydrofluoric acid
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IC 7555 datasheet
Abstract: 7555 ic
Text: MIS/MOS Single Layer Capacitors Metal Insulator Semiconductor/Metal Oxide Semiconductor For applications in RF, Microwave and GHz ranges, AVX offers MIS/MOS Capacitors. These are Single Layer Capacitors SLCs that use Silicon Nitride or Silicon Dioxide to
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S-MOS00M1006-N
IC 7555 datasheet
7555 ic
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flange RF termination 50
Abstract: SR0602 CHF9838CNF nt 9838
Text: NT *R oH S CO M PL IA Features • ■ ■ ■ Applications DC to 2.2 GHz Flanged model Low VSWR Aluminum Nitride Ceramic ■ High power RF transmission CHF9838CNF Series 250 W Power RF Flanged Chip Termination Absolute Ratings Power .250 W
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CHF9838CNF
SR0602
2002/95/EC
flange RF termination 50
nt 9838
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RF chip
Abstract: CHF3725CNP
Text: PL IA NT CO M *R oH S Features Applications • DC to 3 GHz ■ RF amplifiers ■ Terminals for placement on P.C.B. ■ Attenuators ■ Low VSWR ■ Antenna feeds ■ Aluminum Nitride ceramic CHF3725CNP Series 40 W SMT Power RF Chip Termination Characteristic Curve
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CHF3725CNP
RF chip
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MUR8100
Abstract: MUR8100E RUR8100 RURP8100
Text: MUR8100E, RURP8100 Data Sheet January 2002 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.
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MUR8100E,
RURP8100
MUR8100E
RUR8100
175oC
MUR8100
RURP8100
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EPC2001
Abstract: EPC Gan transistor FX-93 FET MARKING QG
Text: eGaN FET DATASHEET EPC2001 EPC2001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mW ID , 25 A PRELIMINARY EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure
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EPC2001
EPC2001
EPC Gan transistor
FX-93
FET MARKING QG
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Untitled
Abstract: No abstract text available
Text: Binary Chip Capacitors Capacitor Chips • High Reliability Silicon Nitride-Oxide Dielectric The Aeroflex / Metelics BOO and BSP Series Capacitors are designed to facilitate bread-boarding or to use where a trimming capability is required. These devices feature the same dielectric layer and bonding surfaces as our 9000 and 9100 Series
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22R5K-BSP-1
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A500N50X4
Abstract: No abstract text available
Text: Model A500N50X4 Chip Termination 500 Watts, 50Ω Description The A500N50X4 is high performance Aluminum Nitride AlN chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The high power handling makes the part ideal for terminating
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A500N50X4
A500N50X4
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Untitled
Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS MFE211 – MFE212 N-CHANNEL DUAL GATE SILICON NITRIDE PASSIVATED MOS FIELD EFFECT TRANSISTORS MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSX 20 Vdc Drain Gate Voltage VDG1 VDG2 35 35 Vdc Gate Current IG1 IG2 ±10
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MFE211
MFE212
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Untitled
Abstract: No abstract text available
Text: FFPF15S60S 15 A, 600 V, STEALTHTM II Diode Features Description • Stealth Recovery Trr = 35 ns @ IF = 15 A The FFPF15S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFPF15S60S
FFPF15S60S
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3 Watt Zener Diode
Abstract: IN4097 zener diode ITT zener wafer ZENER DIODE 900 watt OAC4883 OAC5063 OAC5064 OAC5065 OAC5066
Text: OPTEK TECHNOLOGY INC 4ÖE D • b?TaSflO 00D141S 1ÖT ■ OTK t ^ y u r i tK Product Bulletin 3 Watt Zener V -X * March1990 H - 0 5 3 Watt Zener Diode Die Features • The 3 Watt Zener Die is designed to meet the JEDEC IN5063 through IN4097 types. The die is fully passiviated using silicon dioxide and silicon nitride protection over the
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000141S
-rn-05
IN5063
IN4097
OAC5089
OAC5091
OAC5092
OAC5093
OAC4096
OAC4097
3 Watt Zener Diode
zener diode ITT
zener wafer
ZENER DIODE 900 watt
OAC4883
OAC5063
OAC5064
OAC5065
OAC5066
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Untitled
Abstract: No abstract text available
Text: Networks and Arrays Standard Networks, Nichrome on Alumina Features Electro-Films, Inc provides several series of standard networks with no artwork charge. Both nichrome on alumina and tantalum nitride on silicon types are available. Their application is in low to moderate
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IRC FA series resistor
Abstract: No abstract text available
Text: nm TANFILM SMALL OUTLINE SURFACE MOUNT RESISTOR NETWORK GULL WING • Rugged, m olded co nstru ctio n U ltra precisio n sputtered la n ta lu m nitride resistance e lem en t on high purity alum ina SERIES DESC 87012 and 87013 available Thin film precision
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56r0
Abstract: No abstract text available
Text: MODEL TOS SERIES Tantalum Nitride on Silicon Resistor N etw ork Isolated Circuit S C H E M A T IC S E L EC T R IC A L Operating Temperature Range -55°C to +125°C Interlead Capacitance <2pF Insulation Resistance ^10,000 Megohms Noise, Maximum M IL-STD-202, Method 308
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IL-STD-202,
-35dB
51tethnologies
200ppm/
100ppm/
50ppm/
25ppm/
56r0
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Untitled
Abstract: No abstract text available
Text: M O D E L T O S SERIES Tantalum Nitride on Silicon Resistor N etw o rk Voltage Divider Circuit SCHEMATICS Operating Temperature Range -55°C to +125°C Interlead Capacitance <2pF Insulation Resistance a:10,000 Megohms -35dB Noise, Maximum MIL-STD-202, Method 308
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MIL-STD-202,
-35dB
100ppm/
50ppm/
25ppm
4K/20K
10K/100K
5K/20K
15K/1
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Untitled
Abstract: No abstract text available
Text: MODEL TOS SERIES Tantalum Nitride on Silicon Resistor N etw ork NTL Termination Circuit SCHEMATICS ELECTRICAL Operating Temperature Range -55°C to +125°C Interlead Capacitance <2pF Insulation Resistance a10,000 Megohms Noise, Maximum MIL-STD-202, Method 308
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MIL-STD-202,
-35dB
50ppm
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Untitled
Abstract: No abstract text available
Text: High Q GaAs Abrupt Tuning Diode Chips Features • ■ ■ ■ High Q - 4 ,000 to 15,000 W ide Tuning Capacitance Variation: 4/1 and 6/1 Typical Low Leakage - Nitride-Oxide Passivated X through Ka-Band Types ■ ■ C V E 7800 25 Volt Series C V E 7900 (45 Volt Series)
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CVE7800-18
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Untitled
Abstract: No abstract text available
Text: Hybrid Chip and HDI Components Nichrome on Silicon General Features EFI produces nichrom e on silicon chip resistors similar in size and geometry to its tantalum nitride on silicon line. Nichrome resistors on silicon provide even better long term stability and tighter tolerance than
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL mine RESISTIVE S3E D 4ÔS754S OQDDShb T -6 3 . -Û5* _ TANFILM SUBMINIATURE SURFACE MOUNT PRECISION DIVIDER Encapsulation, including color code indicator Self passivated tantalum nitride dual resistor element SMT-TEE SERIES • Subminiature 0.075" x 0.075"
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S754S
MIL-R-83401)
Code---------------------------------01
1000S2
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RESISTIVE E3E D 4 A 5 7 2 4 B QDOGSbS 1 6 IRC_ TANFILM SUBMINIATURE DUAL NETWORK TANTEE Encapsulation, including color code indicator Self passivated tantalum nitride dual resistor element Gold plated leads SERIES Ceramic pad, large
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1000Q
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photosensor phototransistor
Abstract: Photosensor OPC200 OPC260
Text: OPTEK Product Bulletin OPC260 July 1996 NPN Silicon Phototransistor Chip Type OPC260 Features Optek Technology photosensor chips are fabricated using the latest silicon planar diffused technology and are silicon nitride passivated for long term stability. All photosensors have an
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OPC260
OPC26Q
OPC200
OPC26OVP
OPC260TP
OPC260WP
OPC26OSPues.
photosensor phototransistor
Photosensor
OPC200
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