NJ01
Abstract: ifn423 IFN421
Text: Databook.fxp 1/13/99 2:09 PM Page F-2 F-2 01/99 NJ01 Process Silicon Junction Field-Effect Transistor ¥ Low-Current ¥ Low Gate Leakage Current ¥ High Input Impedance G S-D Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj
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2N4117,
2N4117A
2N4118,
2N4118A
2N4119,
2N4119A
IFN421,
IFN422
IFN423,
IFN424
NJ01
ifn423
IFN421
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Untitled
Abstract: No abstract text available
Text: T-1 3 mm Auto Insertable LED Lamps HP SunPower Series HLMP-N20X HLMP-NG05 HLMP-N30X HLMP-NH01 HLMP-N40X HLMP-NJ01 HLMP-N50X HLMP-NL05 HLMP-N60X HLMP-N10X Technical Data Features Description • T-1 (3 mm) Auto Insertable Package • AlInGaP SunPower Intensity
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HLMP-N20X
HLMP-NG05
HLMP-N30X
HLMP-NH01
HLMP-N40X
HLMP-NJ01
HLMP-N50X
HLMP-NL05
HLMP-N60X
HLMP-N10X
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Untitled
Abstract: No abstract text available
Text: T-1 3 mm Auto Insertable LED Lamps SunPower Series HLMP-N20x HLMP-NG05 HLMP-N30x HLMP-NH01 HLMP-N40x HLMP-NJ01 HLMP-N50x HLMP-NL05 HLMP-N60x HLMP-N10x Technical Data Features Description • T-1 (3 mm) Auto Insertable Package • AlInGaP SunPower Intensity
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HLMP-N20x
HLMP-NG05
HLMP-N30x
HLMP-NH01
HLMP-N40x
HLMP-NJ01
HLMP-N50x
HLMP-NL05
HLMP-N60x
HLMP-N10x
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N305
Abstract: HLMP-N305 HLMP-N405 HLMP-NG05 HLMP-NG07 HLMP-NJ01 HLMP-NL06
Text: T-1 3 mm Auto Insertable LED Lamps HLMP-N305 HLMP-N405 HLMP-NG0x HLMP-NJ01 HLMP-NL06 Technical Data Features Description • T-1 (3 mm) Auto Insertable Package • AlInGaP SunPower Intensity • High Light Output • Tinted Diffused and Tinted Non-diffused Lens Options
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HLMP-N305
HLMP-N405
HLMP-NJ01
HLMP-NL06
5988-3879EN
5988-4549EN
N305
HLMP-N305
HLMP-N405
HLMP-NG05
HLMP-NG07
HLMP-NJ01
HLMP-NL06
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PJ32
Abstract: nj132 SMP4117 SMP4339 smpp1086 SMP3824 SMPJ309 interfet SMP3369 SMP4393
Text: Databook.fxp 1/13/99 2:09 PM Page E-2 E-2 01/99 Small Outline Surface Mount Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS IGSS VGS (OFF) Limits Min Max (V) (V) IDSS Conditions VDS ID (V) (nA) Min (V) @IG (µA) Max
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SMP3369
SMP3370
SMP3458
SMP3459
SMP3460
SMP5462
SMPJ174
SMPJ175
PJ32
nj132
SMP4117
SMP4339
smpp1086
SMP3824
SMPJ309
interfet
SMP3369
SMP4393
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DIODE DATABOOK
Abstract: DPAD10 surface mount pico-amp diode
Text: Databook.fxp 1/14/99 1:34 PM Page C-2 C-2 01/99 DPAD1, DPAD2, DPAD5, DPAD10 Dual Pico-AMP Diode Absolute maximum ratings at TA = 25¡C ¥ High Impedance Protection Circuits Continuous Forward Gate Current Storage Temperature Range DPAD1 At 25°C free air temperature:
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DPAD10
DIODE DATABOOK
DPAD10
surface mount pico-amp diode
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VCR2N
Abstract: NJ16
Text: Databook.fxp 1/14/99 11:33 AM Page C-8 C-8 01/99 VCR2N, VCR4N, VCR7N N-Channel Silicon Voltage Controlled Resistor JFET ¥ ¥ ¥ ¥ Absolute maximum ratings at TA = 25¡C. Small Signal Attenuators Filters Amplifier Gain Control Oscillator Amplitude Control
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2N4117
Abstract: 2N4118 2N4119A 2N4119 2N4117A 2N4118A 2n4117 equivalent transistor 2N4119 2n4117a equivalent
Text: Databook.fxp 1/13/99 2:09 PM Page B-9 B-9 01/99 2N4117, 2N4117A, 2N4118, 2N4118A, 2N4119, 2N4119A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifiers ¥ Ultra-High Input Impedance Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage
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2N4117,
2N4117A,
2N4118,
2N4118A,
2N4119,
2N4119A
2N4117
2N4117A
2N4118
2N4118A
2N4117
2N4118
2N4119A
2N4119
2N4117A
2N4118A
2n4117 equivalent
transistor 2N4119
2n4117a equivalent
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IFN424
Abstract: IFN425 IFN426 transistor B42 electrometers
Text: Databook.fxp 1/14/99 12:22 PM Page B-42 B-42 01/99 IFN424, IFN425, IFN426 Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Very High Impedance Differential Amplifiers ¥ Electrometers Device Dissapation Derate 3.2 mW/°C to 50°C
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IFN424,
IFN425,
IFN426
IFN424
IFN425
IFN426
transistor B42
electrometers
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2N6449
Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
Text: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current
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2N3821,
2N3822
2N3821
2N6449
MIXER U350
TR320
2N4861
2N4858A
2n4117 equivalent
J231 2N5461
2N6450
CD860
SMP5116
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IFN423
Abstract: IFN421 IFN422 electrometers electrometer
Text: Databook.fxp 1/14/99 12:22 PM Page B-41 B-41 01/99 IFN421, IFN422, IFN423 Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Very High Input Impedance Differential Amplifiers ¥ Electrometers Device Dissipation Derate 3.2 mW/°C to 50°C
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IFN421,
IFN422,
IFN423
IFN421
IFN422
IFN423
electrometers
electrometer
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surface mount pico-amp diode
Abstract: diode pico-amp DIODE DATABOOK PAD5
Text: Databook.fxp 1/14/99 1:59 PM Page C-3 C-3 01/99 PAD1, PAD2, PAD5 Low Leakage Pico-AMP Diode Absolute maximum ratings at TA = 25¡C ¥ High Impedance Protection Circuits PAD1 At 25°C free air temperature: Electrical Characteristics Min Reverse Current IR Breakdown Reverse Voltage
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O-236AB
surface mount pico-amp diode
diode pico-amp
DIODE DATABOOK
PAD5
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NJ01
Abstract: No abstract text available
Text: I . . , A L L E GR O M I C R O S Y S T E M S INC T3 D QS0433Ô 0003751 2 • T-9 1-0 1 PROCESS NJ01 Process NJ01 N-Channel Junction Field-Effect Transistor Process NJ01 is an N-channel junction field-effect
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00D37S1
T-91-01
NJ01
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Untitled
Abstract: No abstract text available
Text: IN TER F E T CORP 2bE Mfl2bösa o o o o n o ? D T- 9/-&0 A4 N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at TA - 25 °C VgSioHi V|0B|GSS Max nA> 2N5556 *30 -1 0 -0 1 -1 5 2N5557 -3 0 -1 0 -0 1 -1 5 2N5558 -3 0 -1 0 -0 1 -1 5 2N6451 -2 0
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2N5556
2N5557
2N5558
2N6451
2N6452
2N6453
2N64S4
NF5101
2N6449
2N6450
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Untitled
Abstract: No abstract text available
Text: 9 -9 7 D 2 DPAD1, DPAD2, PPAD5, DPAD10 DUAL PICO-AMP DIODE • H IGH IMPEDANCE PROTECTION CIRCUITS Absolute maximum ratings at TA = 25‘ C Continuous Forward Gate Current 50 mA Storage Temperature Range DPAD1 At 25°C free air temperature: Min Electrical Characteristics
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DPAD10
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TP4119
Abstract: 2n3819 field-effect transistors nj132 TP3823 TP3370 TP4392 2N3819 NJ16 NJ32 TP3369
Text: 6513650 S PR AG UE /SE NICOND GROUP 8 5 1 4 0 1 9 S P RA GU E, SEMICONDS/ICS 0003b00 4 93 D 03600] 7"- PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C VgS oH) V(flR)GSS Limits Igss Max. (nA) Device Tin*
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0D03bQ0
TP3369
TP3370
TP3458
91-ao
O-226AA/STYLES
TP4119
2n3819 field-effect transistors
nj132
TP3823
TP4392
2N3819
NJ16
NJ32
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ij9 cc
Abstract: No abstract text available
Text: 6MBI20L-060 2 oa g ± /< 7 I^ H T M 'ii : Outline Drawings IG B T ^ i- J U IGBT MODULE 16 : Features • 17 7.5 7 7 7 7 7 16.5 3.5 High Speed Switching • ifeSSiOflE Low Saturation Voltage • S A * ^ — Hfttfc(MOS-y— hlfliit) •t iia — I I Tü I îê w c
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6MBI20L-060
l95t/R89
Shl50
ij9 cc
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2N4119
Abstract: NF5102 NF5103 2n6449 2N5556 2N5557 2N5558 2N6451 2N6452 2N6453
Text: INTER F E T CORP 2 bE 4 flSbaöfl D 00001=10 7 T- Ÿ/-& 0 A4 N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at TA - 25 °C VgSioHi Mm V <'<1c (M.AI Conditions Max (nA> 'V GS (V) Mm {V) -1 5 -1 5 -1 5 -0 2 -4 0 15 -0 8 -1 5 -5 0 -6 0 15 1 0
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2N5556
2N5557
2N5558
2N6451
2N6452
NF5301
2N6449
2N6450
2N4119
NF5102
NF5103
2N6453
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Untitled
Abstract: No abstract text available
Text: ï S P R A G U E / S E MI C O ND 8514019 SPRAG U E. GROUP 13 D • ÖS13ÖSG S E M IC O N D S / IC S 93D GQD3tm 4 ■ 0 3 6 1 4 J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at Tfl = 25°C V gsiohj
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2N5556
2N5557
2N5558
2N6451
2N6452
2N6453
2N6454
NF5101
NF5102
NF5103
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DPAD1A
Abstract: DPA010
Text: 8-94 D 2 DPAD1A, DPAD2, DPAD5, DPAD10 DUAL PICO-AMP D IO D E • HIGH IMPEDANCE PROTECTION CIRCUITS Absolute maximum ratings at TA = 25°C Continuous Forward Gate Current 50 mA Storage Temperature Range DPAD1A At 25°C free air temperature: Reverse Current
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DPAD10
DPA010
DPAD1A
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS 8514019 SPRAGU E. INC *Î3 J> WÊ 05Q433Ô S E M IC O N D S / IC S O O O S b l M 3 • AL6R 93D 03614 J> 7=z.?-zSMETAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at Î A = 25°C
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05Q433Ã
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"voltage controlled resistor"
Abstract: VCR7N
Text: D 8 9 -9 7 VCR2N, VCR4N, VCR7N N-CH ANNEL SILICON VOLTAGE CONTROLLED RESISTOR JFET • • • • Absolute maximum ratings at TA = 25°C. SMALL SIGNAL ATTENUATORS FILTERS AMPLIFIER GAIN CONTROL OSCILLATOR AMPLITUDE CONTROL At 25°C free air temperature: Gate Source Breakdown Voltage
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pj211
Abstract: J300C SMP4220 SMP4091 smp4856 BF24 j300b SMP4117
Text: INT ER F E T CORP 2bE D • 4fl2bflflä 0 0 0 0 2 3 6 T ■ C1 T '- Z Z - Z S ' -r~3s-~?.5 N Channel JFETs _ SMALL OUTLINE N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS Electrical Characteristics at TA = 25°C VGSlo»i V Bfl|GSS less Ui lG
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NJ132
NJ132
pj211
J300C
SMP4220
SMP4091
smp4856
BF24
j300b
SMP4117
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VCR7N
Abstract: No abstract text available
Text: D8 9-9 7 VCR2N , VCR4N, V C R 7 N N-CHANNEL SILICON VOLTAGE CONTROLLED RESISTOR JFET • • • • A b so lu te m axim u m r a tin g s at TA = 25°C. SMALL SIGNAL ATTENUATORS FILTERS AMPLIFIER GAIN CONTROL OSCILLATOR AMPLITUDE CONTROL At 25°C free air temperature:
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