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    NP28N10SDE Search Results

    NP28N10SDE Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    NP28N10SDE-E1-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
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    NP28N10SDE Price and Stock

    Rochester Electronics LLC NP28N10SDE-E1-AY

    NP28N10SDE-E1-AY - MOS FIELD EFF
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    DigiKey NP28N10SDE-E1-AY Bulk 226
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    Renesas Electronics Corporation NP28N10SDE-E1-AY

    TRANSISTOR
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    Rochester Electronics NP28N10SDE-E1-AY 2,500 1
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    NP28N10SDE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NP28N10SDE-E1-AY Renesas Electronics America Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANSISTOR Original PDF

    NP28N10SDE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP28N10SDE R07DS0507EJ0100 Rev.1.00 Sep 16, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP28N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS on 1 = 52 mΩ MAX. (VGS = 10 V, ID = 14 A)


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    NP28N10SDE R07DS0507EJ0100 NP28N10SDE AEC-Q101 NP28N10SDE-E1-AY NP28N10SDE-E2-AY O-252 PDF

    NP28N10SDE

    Abstract: NP28N10
    Text: Preliminary Data Sheet NP28N10SDE R07DS0507EJ0100 Rev.1.00 Sep 16, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP28N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS on 1 = 52 mΩ MAX. (VGS = 10 V, ID = 14 A)


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    NP28N10SDE R07DS0507EJ0100 NP28N10SDE AEC-Q101 NP28N10SDE-E1-AY NP28N10SDE-E2-AY O-252 NP28N10 PDF

    2sk4145

    Abstract: 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919
    Text: PowerMOSFET Product Overview February 2010 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)  Sorted by voltage first, followed by resistance and current


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    SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) OT-23F, O-252Z, O-252ZK, O-252ZP, O-263ZJ, 2sk4145 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919 PDF

    2sk4145

    Abstract: 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A mosfet 2sk4145 UPA1914TE-T1 2sk4080
    Text: PowerMOSFET Product Overview www.renesas.eu 2010.04 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: Renesas uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)


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    SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) OT-23F, O-252Z, O-252ZK, O-252ZP, O-263ZJ, 2sk4145 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A mosfet 2sk4145 UPA1914TE-T1 2sk4080 PDF

    R2A11301FT

    Abstract: SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas
    Text: Renesas Automotive www.renesas.com 2011.10 Renesas Automotive Introduction "Green" Automotive Initiative Leading the World with a Wide-Ranging Product Lineup • Application Systems ■ Renesas Products Contents 01 ■ Renesas Constituent Technologies HEV/EV


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    /533MHz BGA-832 BGA-472 BGA-429 BGA-720 BGA-653 R2A11301FT SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas PDF

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


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    R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram PDF

    RJK03P7DPA

    Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
    Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position


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    0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 PDF

    UPD70F3524

    Abstract: uPD70F3525 uPD70F3526 uPD70F3529 uPD70F3508 upd70f3523 uPD70F3506 UPD166017 uPD70F35 V850E2 uPD70F3526
    Text: www.renesas.eu 2010.04 Product Scout Automotive fro s t c du o r p ws y! l o n h s o ew ics i n v o r r e t c ov e l s i E h C T E N r e form m Before actually using the product, Renesas urges users to refer to the latest product manual and/or data sheet in advance.


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    X19136EE4V0PF00 78K0/KB2 PD78F0513AD 78K0/KC2 78K0/KD2 78K0/KE2 78K0/KF2 78K0/FY2-L 78K0/FA2-L 78K0/FB2-L UPD70F3524 uPD70F3525 uPD70F3526 uPD70F3529 uPD70F3508 upd70f3523 uPD70F3506 UPD166017 uPD70F35 V850E2 uPD70F3526 PDF

    NP75P04

    Abstract: NP75N04 np15p06 HSON8 CD 40472 np28n10sde NP36P04SDG NP23N06 NP23N06YLG NP50P06SDG
    Text: NP-Series • AEC-Q101 and RoHS compliant • Super high current capability • Super low RDS on down to 1.5 m W • Small HSON-8 package • Popular THD and SMD packages • Standard maximum TCH = 175 °C, up to 200 °C for UMOS-2R • SuperJunction1 technology:


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    AEC-Q101 D17430EE5V0PF00 NP75P04 NP75N04 np15p06 HSON8 CD 40472 np28n10sde NP36P04SDG NP23N06 NP23N06YLG NP50P06SDG PDF

    "seat heater"

    Abstract: np28n10sde NP32N055SLE NP100N055PDH NP74N04YUG NP50P06SDG NP100N055MUH NP15P04SLG NP36N055SLE NP36P06SLG
    Text: NP-Series • AEC-Q101 and RoHS compliant • Super high current capability • Super low RDS on down to 1.5 mΩ • Small HSON-8 package • Popular THD and SMD packages • Standard maximum TCH = 175 °C, up to 200 °C for UMOS-2R • SuperJunction1 technology:


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    AEC-Q101 O-220 O-262 O-263ZJ O-251 O-252Z O-263ZK O-220M O-262N O-263ZP "seat heater" np28n10sde NP32N055SLE NP100N055PDH NP74N04YUG NP50P06SDG NP100N055MUH NP15P04SLG NP36N055SLE NP36P06SLG PDF