NP55N04 Search Results

NP55N04 Result Highlights (3)

Part	Manufacturer	Description
NP55N04SUG-E1-AY	Renesas Electronics Corporation	Power MOSFETs for Automotive
NP55N04SUG-E1-AZ	Renesas Electronics Corporation	Power MOSFETs for Automotive
NP55N04SUG-E2-AY	Renesas Electronics Corporation	Power MOSFETs for Automotive

NP55N04 Price and Stock

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Renesas Electronics Corporation NP55N04SUG-E1-AY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	NP55N04SUG-E1-AY		5,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	NP55N04SUG-E1-AY			28 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Renesas Electronics Corporation NP55N04SUGE1 Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	NP55N04SUGE1		2,011			1 - 10 - 100 - 1000 - 10000 -	Get Quote

NP55N04 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NP55N04SUG		NEC	MOS FIELD EFFECT TRANSISTOR		Original	PDF
NP55N04SUG-E1-AY		Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 55A TO-252		Original	PDF

NP55N04 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP55N04SUG TO-252 MP-3ZK	Original	NP55N04SUG NP55N04SUG O-252 O-252)	PDF
NP55N04SLG Abstract: NP55N04SLG-E2-AY NP55N04SLG-E1-AY Text: Preliminary Data Sheet NP55N04SLG R07DS0242EJ0100 Rev.1.00 Feb 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Channel temperature 175 degree rating	Original	NP55N04SLG R07DS0242EJ0100 NP55N04SLG NP55N04SLG-E1-AY NP55N04SLG-E2-AY O-252 NP55N04SLG-E2-AY NP55N04SLG-E1-AY	PDF
d1740 Abstract: NP55N04SUG Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP55N04SUG TO-252 MP-3ZK	Original	NP55N04SUG NP55N04SUG O-252 O-252) d1740	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet NP55N04SLG R07DS0242EJ0100 Rev.1.00 Feb 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Channel temperature 175 degree rating	Original	NP55N04SLG R07DS0242EJ0100 NP55N04SLG NP55N04SLG-E1-AY NP55N04SLG-E2-AY O-252 Note9044	PDF
2sk4145 Abstract: 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919 Text: PowerMOSFET Product Overview February 2010 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)  Sorted by voltage first, followed by resistance and current	Original	SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) OT-23F, O-252Z, O-252ZK, O-252ZP, O-263ZJ, 2sk4145 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919	PDF
2sk4145 Abstract: 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A mosfet 2sk4145 UPA1914TE-T1 2sk4080 Text: PowerMOSFET Product Overview www.renesas.eu 2010.04 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: Renesas uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)	Original	SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) OT-23F, O-252Z, O-252ZK, O-252ZP, O-263ZJ, 2sk4145 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A mosfet 2sk4145 UPA1914TE-T1 2sk4080	PDF
2SK2500 Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861 Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose	Original		PDF
RJH60F7 Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652 Text: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to	Original	RJP6085DPN O-220AB RJP6085DPK RJH6085BDPK RJH6086BDPK RJH6087BDPK RJH6088BDPK RJH60F7 rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652	PDF
FSQ510 Equivalent Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178	Original	GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2	PDF
RJP63k2 Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching	Original	R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606	PDF
MPA2733GR Abstract: MPA2733 2sk4075 MOSFET 8PIN nec power mosfet bare die np 2SK4213 mpa602t 2SJ647M 2SKxxxx NP100P04PDG Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	O-263 O-252 mPA672T. mPA675T. mPA677TB. mPA678TB. mPA679TB. M8E0710J D18669JJ3V0SG D18669JJ3V0SG003 MPA2733GR MPA2733 2sk4075 MOSFET 8PIN nec power mosfet bare die np 2SK4213 mpa602t 2SJ647M 2SKxxxx NP100P04PDG	PDF
R2A11301FT Abstract: SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas Text: Renesas Automotive www.renesas.com 2011.10 Renesas Automotive Introduction "Green" Automotive Initiative Leading the World with a Wide-Ranging Product Lineup • Application Systems ■ Renesas Products Contents 01 ■ Renesas Constituent Technologies HEV/EV	Original	/533MHz BGA-832 BGA-472 BGA-429 BGA-720 BGA-653 R2A11301FT SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas	PDF
NP55N04SUG Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
RJJ0319DSP Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?	Original	R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram	PDF

TO-263 footprint Abstract: UMOS-4 NP90N04MUG NP82N055MHE NP60N04KUG NP22N055SLE NP32N055SDE NP32N055SLE NP34N055SHE NP36N055SHE Text: NP-Series • • • • • • AEC-Q101 compliant Super high current capability Tj,max = 175°C Avalanche energy rated TO-220, TO-252 and TO-263 package RoHS compliant + + + new P-Channel products + + + NP-series – our hotheads can take the heat NEC Electronic’s PowerMOSFET NP-series	Original	AEC-Q101 O-220, O-252 O-263 D17430EE2V0PF00 TO-263 footprint UMOS-4 NP90N04MUG NP82N055MHE NP60N04KUG NP22N055SLE NP32N055SDE NP32N055SLE NP34N055SHE NP36N055SHE	PDF
NP75P04 Abstract: NP75N04 np15p06 HSON8 CD 40472 np28n10sde NP36P04SDG NP23N06 NP23N06YLG NP50P06SDG Text: NP-Series • AEC-Q101 and RoHS compliant • Super high current capability • Super low RDS on down to 1.5 m W • Small HSON-8 package • Popular THD and SMD packages • Standard maximum TCH = 175 °C, up to 200 °C for UMOS-2R • SuperJunction1 technology:	Original	AEC-Q101 D17430EE5V0PF00 NP75P04 NP75N04 np15p06 HSON8 CD 40472 np28n10sde NP36P04SDG NP23N06 NP23N06YLG NP50P06SDG	PDF
SC-95 Abstract: 2SK3294-ZJ-E1 UPA2724 NP22N055SLE-E1 2sk4075 UPA2726 2sk3919 2SJ598 2SK3570 UPA2723T1A Text: PowerMOSFET Product Overview April 2007 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device:  Listed by conﬁguration single/dual and polarity (N or P)  Sorted by voltage ﬁrst, followed by resistance and current	Original	MP-10, SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) O-252Z, O-252ZK, O-263ZJ, O-263ZK, SC-95 2SK3294-ZJ-E1 UPA2724 NP22N055SLE-E1 2sk4075 UPA2726 2sk3919 2SJ598 2SK3570 UPA2723T1A	PDF
D1859 Abstract: NP110N04PUG POWER MOS FET 2sj 2sk MP-25ZJ NP36P06SLG NP52N055SUG np82n055 NP55N04SUG NP55N055SDG NP60N03KUG Text: Power MOS FET NP series Ultra-Low On-Resistance Series Suitable for Automotive Electronic Applications The NP Series has been designed to meet the demanding requirements in the field of automotive electronics. The channel temperature rating is 175°C max., which is 25°C higher than that of 2SK/2SJ Series. The NP Series realizes the	Original	D18595EJ1V0PF00 D1859 NP110N04PUG POWER MOS FET 2sj 2sk MP-25ZJ NP36P06SLG NP52N055SUG np82n055 NP55N04SUG NP55N055SDG NP60N03KUG	PDF
PD166104GS Abstract: PA1915TE mp sot 23 uPD166007 UMOS-4 np np88n04kug NP180N04TUG 2sj598 PC78L05T PD166005GR Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	2SJ607( 2SJ607 PC29L05T OT-89 16cm2 PC1099GS PD166104GS PA1915TE mp sot 23 uPD166007 UMOS-4 np np88n04kug NP180N04TUG 2sj598 PC78L05T PD166005GR	PDF
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
mc10087f1 Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059 Text: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.	Original	IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059	PDF
BV387 Abstract: NP110N04PDG NP82N04PUG TC225 IS736 NP88N03KDG 61E18 NP55N04SUG NP52N055SUG NP55N055SDG Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	NP60N03KUG NP55N04SUG NP52N055SUG NP82N03PUG NP60N04KUG NP55N055SDG NP88N03KDG NP82N04PUG NP55N055SUG NP88N03KUG BV387 NP110N04PDG NP82N04PUG TC225 IS736 NP88N03KDG 61E18 NP55N04SUG NP52N055SUG NP55N055SDG	PDF
2SC5664 Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326 Text: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation	Original	D18597EJ1V0SG 2SC5664 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326	PDF
Ge-RF Abstract: R01US0015E R5F10AA Text: 16 RL78/F13, F14 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by	Original	RL78/F13, 16-Bit R01UH0368EJ0200 Ge-RF R01US0015E R5F10AA	PDF

NP55N04 Search Results

NP55N04 Result Highlights (3)

NP55N04 Price and Stock

Renesas Electronics Corporation NP55N04SUG-E1-AY

Renesas Electronics Corporation NP55N04SUGE1

NP55N04 Datasheets (2)

NP55N04 Datasheets Context Search

Untitled

NP55N04SLG

d1740

Untitled

2sk4145

2sk4145

2SK2500

RJH60F7

FSQ510 Equivalent

RJP63k2

MPA2733GR

R2A11301FT

NP55N04SUG

RJJ0319DSP

TO-263 footprint

NP75P04

SC-95

D1859

PD166104GS

Untitled

mc10087f1

BV387

2SC5664

Ge-RF