d1413
Abstract: M-0350
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055CHE, NP82N055DHE, NP82N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP82N055CHE,
NP82N055DHE,
NP82N055EHE
NP82N055CHE
NP82N055DHE
NP82N055EHE
O-220AB
O-262
O-263
O-220AB)
d1413
M-0350
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d1413
Abstract: MP-25 NP82N055CHE NP82N055DHE NP82N055EHE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055CHE, NP82N055DHE, NP82N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP82N055CHE,
NP82N055DHE,
NP82N055EHE
NP82N055CHE
O-220AB
NP82N055DHE
O-262
O-263
O-220AB)
d1413
MP-25
NP82N055CHE
NP82N055DHE
NP82N055EHE
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055CHE, NP82N055DHE, NP82N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP82N055CHE,
NP82N055DHE,
NP82N055EHE
NP82N055CHE
NP82N055DHE
NP82N055EHE
O-220AB
O-262
O-263
O-220AB)
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MP-25
Abstract: NP82N055CHE NP82N055DHE NP82N055EHE
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP82N055CHE, NP82N055DHE, NP82N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP82N055CHE,
NP82N055DHE,
NP82N055EHE
O-220AB
O-262
NP82N055DHE
NP82N055CHE
O-263
MP-25
NP82N055CHE
NP82N055DHE
NP82N055EHE
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nec 82n055 HE
Abstract: 82n055 nec 82n055 MP transistor 82n055 82N055HE NP82N055NHE nec82n055 NP82N055KHE-E1-AY NP82N055EHE NP82N055EHE-E1-AY
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055EHE, NP82N055KHE NP82N055CHE, NP82N055DHE, NP82N055MHE, NP82N055NHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
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NP82N055EHE,
NP82N055KHE
NP82N055CHE,
NP82N055DHE,
NP82N055MHE,
NP82N055NHE
NP82N055EHE-E1-AY
NP82N055EHE-E2-AY
NP82N055KHE-E2-AY
NP82N055KHE-E1-AY
nec 82n055 HE
82n055
nec 82n055
MP transistor 82n055
82N055HE
NP82N055NHE
nec82n055
NP82N055KHE-E1-AY
NP82N055EHE
NP82N055EHE-E1-AY
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MP-25
Abstract: NP82N055CHE NP82N055DHE NP82N055EHE
Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055CHE, NP82N055DHE, NP82N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching
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NP82N055CHE,
NP82N055DHE,
NP82N055EHE
O-262
O-220AB
NP82N055DHE
NP82N055CHE
O-263
MP-25
NP82N055CHE
NP82N055DHE
NP82N055EHE
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d1413
Abstract: MP-25 NP82N055CHE NP82N055DHE NP82N055EHE NP82N055KHE MP-25ZK
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055CHE,NP82N055DHE,NP82N055EHE,NP82N055KHE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor PART NUMBER PACKAGE NP82N055CHE TO-220AB NP82N055DHE
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NP82N055CHE
NP82N055DHE
NP82N055EHE
NP82N055KHE
NP82N055CHE
O-220AB
NP82N055DHE
O-262
NP82N055EHE
O-263
d1413
MP-25
NP82N055KHE
MP-25ZK
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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82n055
Abstract: nec 82n055 HE nec 82n055 NP82N055NHE NP82N055CHE NP82N055DHE NP82N055EHE NP82N055EHE-E1-AY NP82N055EHE-E2-AY NP82N055KHE
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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TO-252 MOSFET p channel
Abstract: NP80N03CLE NP80N03DLE NP80N03ELE NP80N04CHE NP80N04DHE NP80N04EHE NP84N04CHE NP84N04DHE NP84N04EHE
Text: Power house NP-Series 4/99 l TJ, MAX = 175° C l Ultra low On-Resistance RDS ON l Low Gate-Charge l Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive - Electric Power Steering
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NL-5612
S-18322
F-78142
E-28007
NP-S-NEWS109V30
TO-252 MOSFET p channel
NP80N03CLE
NP80N03DLE
NP80N03ELE
NP80N04CHE
NP80N04DHE
NP80N04EHE
NP84N04CHE
NP84N04DHE
NP84N04EHE
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mc10087f1
Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
Text: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.
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IR260/WS260/HS350
IR260/HS350
mc10087f1
mc-10041
mc-10043
MC-10087F1-XXX
MC-10044
MC-10051BF1
2SC5664
2SC5292
UPC1701C
mc-10059
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SC5664
Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326
Text: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation
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D18597EJ1V0SG
2SC5664
2sc5292
NPN transistor SST 117
D1859
2sK4075 TRANSISTOR
2sc945
2SK4075
PC78L05J
2SK3918
2sk3326
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