BUX51N
Abstract: No abstract text available
Text: BUX51N Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 200V 0.41 (0.016)
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BUX51N
O205AD)
1-Aug-02
BUX51N
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BUX51X
Abstract: No abstract text available
Text: BUX51X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 200V 0.41 (0.016)
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BUX51X
O205AD)
1-Aug-02
BUX51X
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BUX51X
Abstract: No abstract text available
Text: BUX51X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 200V 0.41 (0.016)
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BUX51X
O205AD)
19-Jun-02
BUX51X
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Untitled
Abstract: No abstract text available
Text: BUX51N Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 200V 0.41 (0.016)
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BUX51N
O205AD)
19-Jun-02
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Untitled
Abstract: No abstract text available
Text: BUX51N Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 200V 0.41 (0.016)
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BUX51N
O205AD)
17-Jul-02
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Untitled
Abstract: No abstract text available
Text: BUX51X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 200V 0.41 (0.016)
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BUX51X
O205AD)
17-Jul-02
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2N5101
Abstract: BUY46 BUW32 BUS13A BUV21 ISO BUZ171 equivalent BUY22 BUT51P BUX23 BUT13P
Text: STI Type: 2N5050 Notes: Polarity: NPN Power Dissipation: 40 VCBO: 125 VCER: 125 ICBO: 125 ICBO ua: 500 hFE: 25 hFE A: 1.0 VCE: 1.0 VBE: 1.2 IC A: .75 COB: 250 fT: 10 Case Style: TO-213AA/TO-66 Industry Type: 2N5050 STI Type: 2N5052 Notes: *BVCEO Polarity: NPN
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2N5050
O-213AA/TO-66
2N5052
2N5055
O-206AA/TO-18:
2N5056
2N5101
BUY46
BUW32
BUS13A
BUV21 ISO
BUZ171 equivalent
BUY22
BUT51P
BUX23
BUT13P
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BUX51
Abstract: No abstract text available
Text: BUX51 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. FEATURES • FAST SWITCHING 5.08 (0.200) typ.
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BUX51
10MHz
300ms
BUX51
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NPN BUX51
Abstract: BUX51
Text: BUX51 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. FEATURES • FAST SWITCHING 5.08 (0.200) typ.
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BUX51
10MHz
300ms
NPN BUX51
BUX51
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BUX51SMD05
Abstract: No abstract text available
Text: BUX51SMD05 Dimensions in mm inches . 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 0.127 (0.005) 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount Package for High
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BUX51SMD05
O276AA)
15-Aug-02
BUX51SMD05
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BUX51SMD
Abstract: No abstract text available
Text: BUX51SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed
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BUX51SMD
O276AB)
15-Aug-02
BUX51SMD
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BUX51
Abstract: No abstract text available
Text: ,O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BUX51 MECHANICAL DATA Dimensions in mm(inches) NPN SILICON TRANSISTOR FEATURES • FAST SWITCHING • HIGH PULSE POWER APPLICATIONS • POWER SWITCHING CIRCUITS
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BUX51
BUX51
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PT8809
Abstract: trw rf 2SC1964 BUX51 dts411 KT921A 2U 37 diode BUX49 KT936A 40340
Text: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 30 NA71U NA71W KT921 A KT921B 2N5785 2N5784 BUX49 BUX49 NthAmerSemi SemiconTech SemiconTech SemiconTech SemiconTech SemiconTech SemiconTech Hitachi Ltd Hitachi Ltd Hitachi Ltd Semelab NthAmerSemi Matsushita
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SPC411
STS411
PTC403
PTC403P
PTC409
PTC409P
PTC402
PTC402P
SPC402
PTC423
PT8809
trw rf
2SC1964
BUX51
dts411
KT921A
2U 37 diode
BUX49
KT936A
40340
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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D 5038 Transistor Horizontal
Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
Text: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching
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CB-69
14f4g
D 5038 Transistor Horizontal
amplificateur audio a base de transistor
transistor 2n 892 X1
amplificateur BF
transistor ST TYN 616
equivalent of transistor bul 38 da
bd 317 schema
transistor 3055 out hv
ESM214
Transistor bdy 58
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BUX69
Abstract: BUX23 BUX37 BUX55 BUX25 BUX80 BUX24 BUX26 BUX27 BUX28
Text: 0133107 DDDDMSb T17 • SMLB MAE D SEMELABI SEMELAB BUX23 BUX24 BUX25 BUX26 BUX27 BUX28 BUX29 BUX34 BUX348 BUX348A BUX348APF BUX348CPF BUX348PF BUX37 BUX39 BUX40 BUX41 BUX41N BUX42 BUX43 BUX44 BUX45 BUX46 BUX47 BUX47A BUX48 BUX48A BUX49 BUX50 BUX51 BUX52 BUX53
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BUX23
BUX24
BUX25
BUX26
BUX27
BUX28
300min
BUX29
100min
BUX34
BUX69
BUX37
BUX55
BUX80
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BUX51
Abstract: transistor 3005 ET 3005 transistor bux 39 transistor 3005 2 NPN BUX51 transistor BUX 22 bux c pilote 5mhz L 3005 TRANSISTOR
Text: BUX 51 BUX 51 N NPN S ILIC O N TR A N S IS TO R , T R IP L E D IF F U S E D MESA T R A N S IS T O R N P N S IL IC IU M , M E S A T R IP L E D I F F U S E T E N T A T IV E D A T A N O T I C E P R O V IS O IR E Driver stage fo r high voltage power transistor
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10/is
BUX51
transistor 3005
ET 3005
transistor bux 39
transistor 3005 2
NPN BUX51
transistor BUX 22
bux c
pilote 5mhz
L 3005 TRANSISTOR
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U 1560
Abstract: BUX24-RC BUX51
Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BUW58 BUW60 BUW61 BUW62 BUW73 BUW74 BUW75 BUW76 BUW77 BUW81 BUW81A BUW89 BUW90 BUW91 BUW92 BUX10 B U X 10C ECC BUX10P BUX11 BUX11 CE C C BUX11N BUX11P BUX12 B U X 12C EC C BUX12P BUX13 BUX13 CE C C
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BUW58
BUW60
BUW61
BUW62
BUW73
BUW74
BUW75
BUW76
BUW77
BUW81
U 1560
BUX24-RC
BUX51
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1n52408
Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
Text: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which
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301PT1115
302PT1115
303PT1115
311PT1110
312PTI110
319PTI110
327PTI110
351PT1115
353PT1115
1n52408
1N52428 zener
SFC2311
78M12HM
21L02A
54175
IRS 9530 transistor
10116dc
BB105G
962PC
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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Edition-1978)
Ausgabe-1978)
BS3934
SO-26
OT-114
NS371
APY12
BYY32
ac176
AEY26
BAV77
bby20
BD545B
BAV27
transistor KT 209 M
AF367
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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