Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NPN PULSE TO 4N37 Search Results

    NPN PULSE TO 4N37 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    NPN PULSE TO 4N37 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    4N35 application note

    Abstract: Control 4N35 optocouplers 4n35 NPN PULSE CIRCUIT TO 4N37 Triac 4N35 4N35 CONTROL CIRCUIT ic 4n35 data sheet 4N35 4N36 4N37
    Text: 4N35, 4N36, 4N37 OPTOCOUPLERS SOES021 – NOVEMBER 1981 – REVISED OCTOBER 1995 COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS • • • • • • Gallium-Arsenide-Diode Infrared Source Optically Coupled to a Silicon npn Phototransistor High Direct-Current Transfer Ratio


    Original     		SOES021 55-kV 4N35 application note Control 4N35 optocouplers 4n35 NPN PULSE CIRCUIT TO 4N37 Triac 4N35 4N35 CONTROL CIRCUIT ic 4n35 data sheet 4N35 4N36 4N37 PDF

    Triac 4N35

    Abstract: optocouplers 4n35 SOES021C Triac ZO 405 4N35 4N36 4N37 MO-001
    Text: 4N35, 4N36, 4N37 OPTOCOUPLERS SOES021C – NOVEMBER 1981 – REVISED APRIL 1998 COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS D D D D D D Gallium-Arsenide-Diode Infrared Source Optically Coupled to a Silicon npn Phototransistor High Direct-Current Transfer Ratio


    Original     		SOES021C 55-kV E65085 Triac 4N35 optocouplers 4n35 SOES021C Triac ZO 405 4N35 4N36 4N37 MO-001 PDF

    optocouplers 4n35

    Abstract: ic 4n35 data sheet Triac 4N35 OPTOCOUPLER 4n35 datasheet 4N35 applications Triac ZO 405 4N36 4N35 application note Control 4N35 4N35
    Text: 4N35, 4N36, 4N37 OPTOCOUPLERS SOES021A – NOVEMBER 1981 – REVISED DECEMBER 1996 COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS D D D D D D Gallium-Arsenide-Diode Infrared Source Optically Coupled to a Silicon npn Phototransistor High Direct-Current Transfer Ratio


    Original     		SOES021A 55-kV optocouplers 4n35 ic 4n35 data sheet Triac 4N35 OPTOCOUPLER 4n35 datasheet 4N35 applications Triac ZO 405 4N36 4N35 application note Control 4N35 4N35 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4N35, 4N36, 4N37 OPTOCOUPLERS SOES021C – NOVEMBER 1981 – REVISED APRIL 1998 COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS D D D D D D Gallium-Arsenide-Diode Infrared Source Optically Coupled to a Silicon npn Phototransistor High Direct-Current Transfer Ratio


    Original     		SOES021C 55-kV E65085 PDF

    Triac 4N35

    Abstract: 4N35 4N35DCJ 4N36 4N37 MO-001
    Text: 4N35, 4N36, 4N37 OPTOCOUPLERS SOES021C – NOVEMBER 1981 – REVISED APRIL 1998 COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS D D D D D D Gallium-Arsenide-Diode Infrared Source Optically Coupled to a Silicon npn Phototransistor High Direct-Current Transfer Ratio


    Original     		SOES021C 55-kV E65085 Triac 4N35 4N35 4N35DCJ 4N36 4N37 MO-001 PDF

    A 69157 scr

    Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
    Text: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer


    Original     		90F8548 SDP8600-001 95F5325 SDP8371-001 28H5849 28H5850 OPB933W55Z 08F2750 OPB963T55 08F2755 A 69157 scr 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3 PDF

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


    Original     		WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910 PDF

    C1684 r .85 transistor

    Abstract: 100JjA optocouplers 4n35 25CC 4N35 4N36 4N37 C1684 transistor transistor c1684
    Text: PHOTOTRANSISTOR OPTOCOUPLERS 0FT8ELECTB0HICS 4N35 4N36 4N37 DESCRIPTION PACKAGE DIMENSIONS “T h e 4N 35,4N 36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS


    OCR Scan     		ST1603A C2Q79 E90700 hu1685 C1296A C1S94 VCEat10 C1684 r .85 transistor 100JjA optocouplers 4n35 25CC 4N35 4N36 4N37 C1684 transistor transistor c1684 PDF

    Untitled

    Abstract: No abstract text available
    Text: EU PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 4N35 4N36 4N37 DIMENSIONS DESCRIPTIO N The 4N35, 4N36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. FEA TU R ES & APPLICATIONS


    OCR Scan     		E90700 C1296A VCEat10 74bbfl51 000b033 PDF

    NPN C1685

    Abstract: C1685 transistor
    Text: EO PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 4N35 4N36 4N37 PACKAGE DIMENSIONS DESCRIPTION Æ db tft The 4N35, 4N36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode.


    OCR Scan     		E90700 NPN C1685 C1685 transistor PDF

    4N35 QUALITY TECHNOLOGIES

    Abstract: 4n35 equivalent C1684 r .85 transistor
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS 4N35 4N36 4N37 DESCRIPTION PACKAGE DIMENSIONS The 4N35, 4N36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. t 6.86


    OCR Scan     		E50151 TYP20 C1685 C1296A C1294 4N35 QUALITY TECHNOLOGIES 4n35 equivalent C1684 r .85 transistor PDF

    C1685

    Abstract: TRANSISTOR C1685 transistor c1684 optocouplers 4n35 C1685 transistor C1681 NPN C1685 c1684 C1684 transistor 4N35
    Text: [sO PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 4N35 4N36 4N37 DESCRIPTION PACKAGE DIMENSIONS j Sl S u The 4N35, 4N36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor o ptically coupled to a gallium arsenide infrared em itting diode.


    OCR Scan     		C1296A 100/is C1294 C1685 TRANSISTOR C1685 transistor c1684 optocouplers 4n35 C1685 transistor C1681 NPN C1685 c1684 C1684 transistor 4N35 PDF

    4n35 equivalent

    Abstract: 4N35 CONTROL CIRCUIT 104N35 4N36
    Text: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTHOHICS 4N35 4N36 4N37 PACKAGE DIMENSIONS Æ & DESCRIPTION & The 4N35, 4N36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared em itting diode. FEATURES & APPLICATIONS


    OCR Scan     		E90700 C1296A 4n35 equivalent 4N35 CONTROL CIRCUIT 104N35 4N36 PDF

    Triac 4N35

    Abstract: hp 4N35 4N37
    Text: 4N35, 4N36, 4N37 OPTOCOUPLERS ^ D 2 6 5 7 . NOVEMBER 1981 - REVISED APRIL 198 3 C O M P A T IB L E W IT H S T A N D A R D T T L IN T E G R A T E D C IR C U IT S • Gallium Arsenide Diode Infrared Source


    OCR Scan     		PDF

    Transistor C1060

    Abstract: C1060 transistor C1061 npn Transistor C1061 NPN Transistor C1061 C1061 transistor C1061 equivalent 4n35 equivalent C1061 2010 4n35
    Text: ûfl GENERAL INSTRUMENT DE | BfllDlEfl DGG2ÔST 5 DT-^f-ô3 O ptocouplers' GENL INSTRi OPTOELEK PHOTOTRANSISTOR OPTOCOUPLERS 4N35 4N36 4N37 1 PACKAGE DIMENSIONS DESCRIPTION The 4N35, 4N36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a


    OCR Scan     		7fH070Ã c2090 C2079 C1060 Transistor C1060 C1060 transistor C1061 npn Transistor C1061 NPN Transistor C1061 C1061 transistor C1061 equivalent 4n35 equivalent C1061 2010 4n35 PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR 37E î> 430E271 00 57 1 3 6 4 Optoelectronic Sp e c ific a tio n s_ IHAS T-m-33 Photon Coupled Isolator 4N35,4N36,4N37 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State 4N35-4N36-4N37 are gallium arsenide


    OCR Scan     		430E271 T-m-33 4N35-4N36-4N37 E51868 S-42662 92CS-429S1 PDF

    4N35-4N37

    Abstract: No abstract text available
    Text: Optoisolator Specifications 4N35, 4N36, 4N37 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e 4 N 3 5 ,4 N 3 6 ,4 N 3 7 a r e g a lliu m a r s e n id e in f r a r e d e m ittin g d io d e s c o u p le d w ith a s ilic o n p h o to tr a n s is to r in a d u a l in -lin e p a ck a g e .


    OCR Scan     		PDF

    Diode 10Z

    Abstract: 4H26 Diode 20Z CNY47A 4N2b h11ag3 OPTEK 4N36 CNY51 B11D3 CNY17
    Text: OPTEK TECHNOLOGY INC DU AL-IN -LINE "fib PACKAGE DEj| bTTñSñD □□□□□ME 7 f i IS O L A T O R S Below listed optoisolators are available in surface mount design. Specify suffix SMA. low profile or SMB (standard profile). P H O T O T R A N S IS T O R


    OCR Scan     		CNY17 CNY47 CNY47A CNY51 H11A2 H11A3 B11A4 Diode 10Z 4H26 Diode 20Z CNY47A 4N2b h11ag3 OPTEK 4N36 CNY51 B11D3 PDF

    4N2b

    Abstract: h11ag3 CNY47A CNY51 B11D3 MCT2 surface mount CNY17 CNY47 H11A2 H11A3
    Text: OPTEK TECHNOLOGY INC DU AL-IN -LINE "fib PACKAGE DEj| bTTñSñD □□□□□ME 7 f i IS O L A T O R S Below listed optoisolators are available in surface mount design. Specify suffix SMA. low profile or SMB (standard profile). P H O T O T R A N S IS T O R


    OCR Scan     		CNY17 CNY47 CNY47A CNY51 H11A2 H11A3 B11A4 4N2b h11ag3 CNY47A CNY51 B11D3 MCT2 surface mount CNY47 H11A2 H11A3 PDF

    c 337 25

    Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
    Text: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3


    OCR Scan     		PDF

    transistor 45 f 122

    Abstract: 4n33 and 4n35 4N35 C 547 transistor TRANSISTOR 547 transistor 551 547 TRANSISTOR 4N27W 4N28 4N31
    Text: 1-22 Coupled Characteristics Max Ratings @ T^ = 25°C Output Pd mW Transistor •c v CEO mA V 4N25<4> Trans 250 — 4N26<4> Trans 250 — Device No. Diode Min Current Transfer Ratio Ic / I f @*f @V c e % mA V Vr V |= mA v lSO kV 3.0 80 2.5 20 10 10 30 3.0


    OCR Scan     		4N27W transistor 45 f 122 4n33 and 4n35 4N35 C 547 transistor TRANSISTOR 547 transistor 551 547 TRANSISTOR 4N28 4N31 PDF

    4N27W

    Abstract: 4N28 4N31 4N35 4N36 4N37 ic 4n35 4n33 and 4n35
    Text: 1-22 Coupled Characteristics Max Ratings @ T^ = 25°C Output Pd mW Transistor •c v CEO mA V 4N25<4> Trans 250 — 4N26<4> Trans 250 — Device No. Diode Min Current Transfer Ratio Ic / I f @*f @V c e % mA V Vr V |= mA v lSO kV 3.0 80 2.5 20 10 10 30 3.0


    OCR Scan     		4N27W 4N28 4N31 4N35 4N36 4N37 ic 4n35 4n33 and 4n35 PDF

    4n27 opto isolator

    Abstract: 4N2S 4n26 opto isolator opto 4n25 4N25 transistor C 547 c 340 opto isolator ic 4n26 opto isolator 4n26 4N26
    Text: 1-22 Coupled Characteristics Max Ratings @ T^ = 25°C Output Pd mW Transistor •c v CEO mA V 4N25<4> Trans 250 — 4N26<4> Trans 250 — Device No. Diode Min Current Transfer Ratio Ic / I f @*f @V c e % mA V Vr V |= mA v lSO kV 3.0 80 2.5 20 10 10 30 3.0


    OCR Scan     		4N27W 4n27 opto isolator 4N2S 4n26 opto isolator opto 4n25 4N25 transistor C 547 c 340 opto isolator ic 4n26 opto isolator 4n26 4N26 PDF

    4n33 and 4n35

    Abstract: 4N27W 4N28 4N29 4N30 4N31 4N32 4N33 4N35 4N36
    Text: 1-22 Coupled Characteristics Max Ratings @ T^ = 25°C Output Pd mW Transistor •c v CEO mA V 4N25<4> Trans 250 — 4N26<4> Trans 250 — Device No. Diode Min Current Transfer Ratio Ic / I f @*f @V c e % mA V Vr V |= mA v lSO kV 3.0 80 2.5 20 10 10 30 3.0


    OCR Scan     		4N27W 4n33 and 4n35 4N28 4N29 4N30 4N31 4N32 4N33 4N35 4N36 PDF