2n2222a transistor
Abstract: 2N2222ADCSM dual npn 500ma 2N2222A surface mount 2N2222A LE17 013 transistor
Text: SILICON SWITCHING NPN TRANSISTOR 2N2222ADCSM • Dual High Speed, Medium Power Saturated Switching Transistor • Hermetic Surface Mount Ceramic Package • Dual NPN version of the 2N2222A Transistor • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated . Per Device
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2N2222ADCSM
2N2222A
500mW
MO-041BB)
2n2222a transistor
2N2222ADCSM
dual npn 500ma
2N2222A surface mount
LE17
013 transistor
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Untitled
Abstract: No abstract text available
Text: SILICON SWITCHING NPN TRANSISTOR 2N2222ADCSM • Dual High Speed, Medium Power Saturated Switching Transistor • Hermetic Surface Mount Ceramic Package • Dual NPN version of the 2N2222A Transistor • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated . Per Device
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2N2222ADCSM
2N2222A
500mW
86mW/Â
MO-041BB)
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pin configuration transistor 2N2222A
Abstract: NPN transistor 2n2222A 2N2222A 0612 2N2222A IC 358 of 2N2222A
Text: 2N2222A High Speed Switching Transistor Features: • NPN Silicon Planar Switching Transistor. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • Switching and Linear application DC and VHF Amplifier applications.
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2N2222A
pin configuration transistor 2N2222A
NPN transistor 2n2222A
2N2222A 0612
2N2222A
IC 358
of 2N2222A
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MJE13002
Abstract: mje13002 to92
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13002 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002 designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly
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MJE13002
MJE13002
MJE13002L-x-T92-B
MJE13002G-x-T92-B
MJE13002L-xat
QW-R204-014
mje13002 to92
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mje13002 to92
Abstract: MJE13002 equivalent mje13002 OF transistor 2N2222 to-92 MJE13002 transistor MJE13002G MJE-13002 2N2222 NPN Transistor to 92
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13002 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002 designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly
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MJE13002
MJE13002
MJE13002L-x-T92-B
MJE13002G-x-T92-B
MJE13002L-x-T92-K
QW-R204-014
mje13002 to92
MJE13002 equivalent
OF transistor 2N2222 to-92
MJE13002 transistor
MJE13002G
MJE-13002
2N2222 NPN Transistor to 92
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Untitled
Abstract: No abstract text available
Text: UTC MJE13002 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR The UTC MJE13002 designed for use in high–volatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching
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MJE13002
O-126
QW-R204-014
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly
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MJE13003-E
MJE13003-E
MJE13003L-E-x-T6S-at
QW-R223-009
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transistor, Ic 1A datasheet, NPN
Abstract: 1.5A 2A coil Driver 2N2222 NPN Transistor features 220V reversing motor control 2N2222 transistor output curve mje13002 TRANSISTOR 2n2222 npn switching transistor 4 npn transistor ic MJE13002 DATA SHEET 220V DC circuits motor control
Text: UTC MJE13002 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR The UTC MJE13002 designed for use in high–volatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching
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MJE13002
O-126
QW-R204-014
transistor, Ic 1A datasheet, NPN
1.5A 2A coil Driver
2N2222 NPN Transistor features
220V reversing motor control
2N2222 transistor output curve
mje13002 TRANSISTOR
2n2222 npn switching transistor
4 npn transistor ic
MJE13002 DATA SHEET
220V DC circuits motor control
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly
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MJE13003-E
MJE13003-E
MJE13003L-E-x-T6S-K
QW-R223-009
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly
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MJE13002-E
MJE13002-E
MJE13002L-E-x-T6S-K
MJE13002G-E-x-T6S-K
QW-R204-032
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly
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MJE13003-E
MJE13003-E
MJE13003L-E-x-T6S-K
MJE13003G-E-x-T6S-K
QW-R223-009
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2n2222a SOT23
Abstract: 2N2222A JAN 2N2222ACSM 2N2222A SOT23 transistor 2N2222A 2N2222A LCC1
Text: 2N2222ACSM HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.
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2N2222ACSM
150mA
2n2222a SOT23
2N2222A JAN
2N2222ACSM
2N2222A
SOT23 transistor 2N2222A
2N2222A LCC1
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2N2222ACSM4
Abstract: LCC3 weight 2n2222a
Text: SEME 2N2222ACSM4 LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR
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2N2222ACSM4
150mA
2N2222ACSM4
LCC3 weight
2n2222a
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2n2222a SOT23
Abstract: 2N2222A LCC1 Transistor 2N2222A SOT23 transistor 2N2222A 2N2222A JAN npn switching transistor 60v 2N2222A 2N2222ACSM HIGH SPEED SWITCHING NPN SOT23
Text: 2N2222ACSM HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.
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2N2222ACSM
150mA
2n2222a SOT23
2N2222A LCC1
Transistor 2N2222A
SOT23 transistor 2N2222A
2N2222A JAN
npn switching transistor 60v
2N2222A
2N2222ACSM
HIGH SPEED SWITCHING NPN SOT23
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited
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MJE13002-E
MJE13002-E
MJE13alues
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Untitled
Abstract: No abstract text available
Text: MSR2N2222AUB / UBC Screened Levels: MSR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2222AUB 100 Krad 100 Krad DESCRIPTION This RHA level high speed switching NPN transistor, 2N2222A in a UB or UBC ceramic
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MSR2N2222AUB
MIL-PRF-19500
MSR2N2222AUB
2N2222A
EEE-INST-002
T4-LDS-0337-2,
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Untitled
Abstract: No abstract text available
Text: MVR2N2222AUB / UBC Screened Levels: MVR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MVR2N2222AUB 100 Krad 100 Krad DESCRIPTION This RHA level high speed switching NPN transistor, 2N2222A in a UB or UBC ceramic
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MVR2N2222AUB
MIL-PRF-19500
MVR2N2222AUB
2N2222A
EEE-INST-002
T4-LDS-0331-2,
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2n2222a SOT23
Abstract: 2N2222A LCC1 2N2222ACSM 2N2222A
Text: SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.
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2N2222ACSM
150mA
2n2222a SOT23
2N2222A LCC1
2N2222ACSM
2N2222A
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2N2222ACSM
Abstract: No abstract text available
Text: SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.
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2N2222ACSM
150mA
2N2222ACSM
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Untitled
Abstract: No abstract text available
Text: SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.
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2N2222ACSM
150mA
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4491E
Abstract: 2N2222ACSM "npn switching transistor" 2N2222ACSM-RH TST001 SIGMA as 103 63E-10
Text: 2N2222ACSM-RH HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR RADIATION TESTED FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004)
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2N2222ACSM-RH
0E-10
0E-08
0E-09
4491E
2N2222ACSM
"npn switching transistor"
2N2222ACSM-RH
TST001
SIGMA as 103
63E-10
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2N2222A LCC1
Abstract: 2n2222a SOT23 2N2222ACSM-RH SOT23 transistor 2N2222A 2N2222ACSM 2n2222a surface tr 5551 Transistor 2N2222A 2N2222A TST001
Text: 2N2222ACSM-RH HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR RADIATION TESTED FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004)
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2N2222ACSM-RH
TST001
TST002
2N2222A LCC1
2n2222a SOT23
2N2222ACSM-RH
SOT23 transistor 2N2222A
2N2222ACSM
2n2222a surface
tr 5551
Transistor 2N2222A
2N2222A
TST001
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Untitled
Abstract: No abstract text available
Text: MSR2N2222AUA Screened Levels: MSR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2222AUA 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor, MSR2N2222AUA device in a UA package, is ideal to
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MSR2N2222AUA
MIL-PRF-19500
MSR2N2222AUA
EEE-INST-002
T4-LDS-0337-1,
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2N2222ACSM4
Abstract: No abstract text available
Text: mi SEME 2N2222ACSM4 LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR
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2N2222ACSM4
2N2222A
100MHz
150mA
150mA
2N2222ACSM4
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