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    NPN TRANSISTOR 1000 MA Search Results

    NPN TRANSISTOR 1000 MA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    NPN TRANSISTOR 1000 MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UTC TIP112 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FEATURES * High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A Min * Low Collector-Emitter Saturation Voltage * Industrial Use EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω)


    Original     		PDF TIP112 O-220 QW-R203-022

    UTCTIP112

    Abstract: QW-R203-022
    Text: UTC TIP112 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FEATURES * High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A Min * Low Collector-Emitter Saturation Voltage * Industrial Use EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω)


    Original     		PDF TIP112 R110k, O-220 QW-R203-022 UTCTIP112

    Untitled

    Abstract: No abstract text available
    Text: UTC PZTA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC PZTA14 is a Darlington transistor. FEATURES 1 2 3 *Collector-Emitter Voltage: VCES = 30V *Collector Power Dissipation: Pc max = 1000 mW 4 SOT-223 1:EMITTER ABSOLUTE MAXIMUM RATINGS


    Original     		PDF PZTA14 PZTA14 OT-223 SYMBO1000 100mA 100mA 100MHz QW-R207-004

    diode r207

    Abstract: "Darlington Transistor" PZTA14
    Text: UTC PZTA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC PZTA14 is a Darlington transistor. FEATURES 1 2 3 *Collector-Emitter Voltage: VCES = 30V *Collector Power Dissipation: Pc max = 1000 mW 4 SOT-223 1:EMITTER ABSOLUTE MAXIMUM RATINGS


    Original     		PDF PZTA14 PZTA14 OT-223 QW-R207-004 diode r207 "Darlington Transistor"

    MJE18002

    Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
    Text: ON Semiconductor MJE18002 * SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 50 WATTS The MJE18002 have an applications specific state–of–the–art die


    Original     		PDF MJE18002 MJE18002 r14525 MJE18002/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105

    MJE18002

    Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 mpf930a
    Text: ON Semiconductort MJE18002 * SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 50 WATTS The MJE18002 have an applications specific state–of–the–art die


    Original     		PDF MJE18002 MJE18002 r14525 MJE18002/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105 mpf930a

    TRANSISTOR R57

    Abstract: 2SC5754 CQ 419 ne664 DCS1800 GSM1800 NE5520379A NE663M04 NE664M04 NE664M04-T2-A
    Text: NEC's MEDIUM POWER NPN NE664M04 SILICON HIGH FRQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH: fT = 20 GHz ICBO PARAMETERS AND CONDITIONS TYP MAX 1000 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA 1000 hFE DC Current1 Gain at VCE = 3 V, IC = 100 mA


    Original     		PDF NE664M04 2SC5754 TRANSISTOR R57 2SC5754 CQ 419 ne664 DCS1800 GSM1800 NE5520379A NE663M04 NE664M04 NE664M04-T2-A

    TRANSISTOR 618

    Abstract: J22 transistor "RF Power Transistor" RF POWER TRANSISTOR RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 3 GHZ 200 watts RF NPN POWER TRANSISTOR 3 GHZ RF TRANSISTOR TRANSISTOR 200 GHZ MAPRST1030-1KS
    Text: Advanced Datasheet Rev 17-06-2005 MAPRST1030-1KS Avionics Pulsed RF Power Transistor 1000 Watts, 1030 MHz, 10µs Pulse Width, 1% Duty Cycle Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration


    Original     		PDF MAPRST1030-1KS TRANSISTOR 618 J22 transistor "RF Power Transistor" RF POWER TRANSISTOR RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 3 GHZ 200 watts RF NPN POWER TRANSISTOR 3 GHZ RF TRANSISTOR TRANSISTOR 200 GHZ MAPRST1030-1KS

    Untitled

    Abstract: No abstract text available
    Text: TPC6901 TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC6901 High-Speed Switching Applications MOS Gate Drive Applications Unit: mm • NPN and PNP transistors are mounted on a compact and slim package. • High DC current gain : NPN hFE = 400 to 1000


    Original     		PDF TPC6901

    TPC6901

    Abstract: MS10S
    Text: TPC6901 TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC6901 High-Speed Switching Applications MOS Gate Drive Applications Unit: mm • NPN and PNP transistors are mounted on a compact and slim package. • High DC current gain : NPN hFE = 400 to 1000


    Original     		PDF TPC6901 TPC6901 MS10S

    Untitled

    Abstract: No abstract text available
    Text: TPC6901 TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC6901 High-Speed Switching Applications MOS Gate Drive Applications Unit: mm • NPN and PNP transistors are mounted on a compact and slim package. • High DC current gain : NPN hFE = 400 to 1000


    Original     		PDF TPC6901

    TPC6901

    Abstract: No abstract text available
    Text: TPC6901 TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC6901 High-Speed Switching Applications MOS Gate Drive Applications Unit: mm • NPN and PNP transistors are mounted on a compact and slim package. • High DC current gain : NPN hFE = 400 to 1000


    Original     		PDF TPC6901 -50ch TPC6901

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductor MJE18002 * SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 50 WATTS The MJE18002 have an applications specific state−of−the−art die


    Original     		PDF MJE18002 O-220 MPF930 MUR105 MPF930 MJE210 MTP12N10 MJE18002

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductor MJE18006 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 100 WATTS The MJE18006 has an applications specific state−of−the−art die


    Original     		PDF MJE18006 MJE18006 O-220 MJE210 MTP12N10

    MJE18006

    Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 si 625
    Text: ON Semiconductor MJE18006 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 100 WATTS The MJE18006 has an applications specific state–of–the–art die


    Original     		PDF MJE18006 MJE18006 r14525 MJE18006/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105 si 625

    Untitled

    Abstract: No abstract text available
    Text: 2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1662 High Current Switching Applications • Unit: mm High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) • Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A)


    Original     		PDF 2SD1662 2-16C1A

    D1662

    Abstract: 2SD1662
    Text: 2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD1662 High Current Switching Applications Unit: mm • High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) · Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A)


    Original     		PDF 2SD1662 D1662 2SD1662

    Untitled

    Abstract: No abstract text available
    Text: 2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1662 High Current Switching Applications • Unit: mm High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) • Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A)


    Original     		PDF 2SD1662

    d1662

    Abstract: 2SD1662 D-1662
    Text: 2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD1662 High Current Switching Applications Unit: mm • High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) • Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A)


    Original     		PDF 2SD1662 d1662 2SD1662 D-1662

    D1662

    Abstract: 2SD1662
    Text: 2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1662 High Current Switching Applications • Unit: mm High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) • Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A)


    Original     		PDF 2SD1662 D1662 2SD1662

    D1662

    Abstract: 2SD1662
    Text: 2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1662 High Current Switching Applications • Unit: mm High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) • Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A)


    Original     		PDF 2SD1662 D1662 2SD1662

    Untitled

    Abstract: No abstract text available
    Text: MMT74 SILICON M IC R O M IN IA T U R E NPN SILICON ANNULAR NPN SILICON RF AM PLIFIER TRANSISTOR TRANSISTOR . . . designed fo r high-gain, low-noise am plifier, oscillator and m ixer applications. • High Current G ain—Bandwidth Product — f y = 1000 M H z (T yp ) @ I q = 4.0 mAdc


    OCR Scan     		PDF NIMT74 450-MHz 50-ohm

    2N2950

    Abstract: TRANSISTOR 2N2950 2N2857 2N3137 2n3600 2N5032 Transistor 2N3866 2N3839 2N5031 2N5179
    Text: General Transistor Corporation SMALL SIG N A L TRANSISTORS WÊÊÊM NPN TRANSISTORS FOR RF APPLICATIONS TRANS FREQ. t r i le U UtNUM RATINI3S dB) NOISE FIGURE MF AND le {ÿf (mA) 5 3.8 3.0 3.0 5 5 5 25 1400 1200 10 10 600 800 1000 1000 1000 750 800 800 1200


    OCR Scan     		PDF 2N91B 2N2857 2N3600 2N3839 2N5031 2N5032 2N5179 2N5642 2N6304 2N6305 2N2950 TRANSISTOR 2N2950 2N3137 Transistor 2N3866

    ballast electronic hps

    Abstract: TRANSISTOR TC 100 mje1800b 740 data sheat AMD 754 hps electronic ballast jf18008 221A-06 AN1040 MJE18006
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE18006* M JF18006* Designer’s Data Sheet SWITCHMODE™ ‘ Motorola Preferred Dtvlct NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS


    OCR Scan     		PDF MJE/MJF18006 O-220 O-220 MJF18006, ballast electronic hps TRANSISTOR TC 100 mje1800b 740 data sheat AMD 754 hps electronic ballast jf18008 221A-06 AN1040 MJE18006