NTE2311
Abstract: npn 1000V 15A NPN Transistor VCEO 1000V
Text: NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V
|
Original
|
NTE2311
NTE2311
npn 1000V 15A
NPN Transistor VCEO 1000V
|
PDF
|
NPN Transistor VCEO 1000V
Abstract: 2SC2688 2SC2688L transistor T 023 XT60
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES 1 * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF
|
Original
|
2SC2688
2SC2688
2300pF)
50MHz
-10mA)
O-126
2SC2688L
2SC2688-x-T60-K
2SC2688L-x-T60-K
NPN Transistor VCEO 1000V
2SC2688L
transistor T 023
XT60
|
PDF
|
2SC2688
Abstract: NPN Transistor VCEO 1000V 2SC2688L QW-R204-023 NPN SILICON TRANSISTOR
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF
|
Original
|
2SC2688
2SC2688
2300pF)
50MHz
-10mA)
2SC2688L-x-T60-K
2SC2688G-x-T60-K
O-126
QW-R204-023
NPN Transistor VCEO 1000V
2SC2688L
NPN SILICON TRANSISTOR
|
PDF
|
2SC2688
Abstract: 2SC2688L NPN Transistor VCEO 1000V
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES 1 * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF
|
Original
|
2SC2688
2SC2688
2300pF)
50MHz
-10mA)
O-126
2SC2688L
2SC2688-x-T60-A-K
2SC2688L-x-T60-A-K
2SC2688L
NPN Transistor VCEO 1000V
|
PDF
|
2SC2688
Abstract: NPN Transistor VCEO 1000V TRANSISTOR 023
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF
|
Original
|
2SC2688
2SC2688
2300pF)
50MHz
-10mA)
2SC2688L-x-T60-K
2SC2688G-x-T60-K
2SC2688L-x-T6C-K
2SC2688G-x-T6C-K
O-126
NPN Transistor VCEO 1000V
TRANSISTOR 023
|
PDF
|
NPN Transistor VCEO 1000V
Abstract: 1000v, NPN NTE2310 transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A
Text: NTE2310 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications. Absolute Maximum Ratings:
|
Original
|
NTE2310
NTE2310
100mA,
NPN Transistor VCEO 1000V
1000v, NPN
transistor VCE 1000V
transistor VCEO 1000V
TO218 package
transistor 1000V 6A
high voltage fast switching npn 4A
|
PDF
|
NPN Transistor VCEO 1000V
Abstract: transistor VCE 1000V
Text: NTE2313 Silicon NPN Transistor High Speed Switch Description: The NTE2313 is a high–voltage, high–speed, glass–passivated NPN power transistor in a TO220 type package designed for use in converters, inverters, switching regulators, motor control systems,
|
Original
|
NTE2313
NTE2313
200mA
500mA,
NPN Transistor VCEO 1000V
transistor VCE 1000V
|
PDF
|
transistor VCE 1000V
Abstract: npn 1000V 15A NPN Transistor VCEO 1000V 300V transistor npn 15a
Text: NTE2333 Silicon NPN Power Transistor for Switching Power Applications Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line– operated Switchmode Power supplies and electronic light ballasts. Features:
|
Original
|
NTE2333
NTE2333
130mA,
650mA
600mA,
transistor VCE 1000V
npn 1000V 15A
NPN Transistor VCEO 1000V
300V transistor npn 15a
|
PDF
|
NPN Transistor VCEO 1000V
Abstract: NTE2327 250V transistor npn 2a transistor VCE 1000V
Text: NTE2327 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2327 is a silicon NPN transistor in a TO126 type package designed for use in converters, inverters, switching regulators, motor control systems and switching applications. Absolute Maximum Ratings:
|
Original
|
NTE2327
NTE2327
100mA,
NPN Transistor VCEO 1000V
250V transistor npn 2a
transistor VCE 1000V
|
PDF
|
NPN Transistor VCEO 1000V
Abstract: transistor BUX81/9
Text: BUX81 MECHANICAL DATA Dimensions in mm inches HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR PostScript Picture C:\GRAPHICS\TO204AA EPS Applications The BUX81 is an epitaxial silicon NPN planar transistor that has high current and high power handling capability and
|
Original
|
BUX81
\GRAPHICS\TO204AA
BUX81
204AA
100kHz
NPN Transistor VCEO 1000V
transistor
BUX81/9
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BUJ403A Silicon Diffused Power Transistor Product specification December 1998 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ403A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
|
Original
|
BUJ403A
O220AB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BUJ303B Silicon Diffused Power Transistor Product specification March 2002 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for
|
Original
|
BUJ303B
O220AB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BUJ106A Silicon Diffused Power Transistor Product specification March 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ106A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
|
Original
|
BUJ106A
O220AB
|
PDF
|
BUJ103AX
Abstract: BP317 BU1706AX
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
|
Original
|
BUJ103AX
SCA60
135104/240/02/pp12
BUJ103AX
BP317
BU1706AX
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ403A Silicon Diffused Power Transistor Product specification December 1998 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ403A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
|
Original
|
BUJ403A
BUJ403A
O220AB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
|
Original
|
BUJ103A
O220AB
SCA60
135104/240/02/pp12
|
PDF
|
BUJ204A
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for
|
Original
|
BUJ204A
O220AB
SCA60
135104/240/02/pp12
BUJ204A
|
PDF
|
BUJ103AX
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
|
Original
|
BUJ103AX
BUJ103AX
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
|
Original
|
BUJ103AX
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ106A Silicon Diffused Power Transistor Product specification March 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ106A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
|
Original
|
BUJ106A
BUJ106A
O220AB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ303B Silicon Diffused Power Transistor Product specification March 2002 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for
|
Original
|
BUJ303B
BUJ303B
O220AB
|
PDF
|
NTE3104
Abstract: No abstract text available
Text: NTE3104 Opto Interrupter Module Photo Reflector, NPN Transistor Output Description: The NTE3104 is a subminiature photo reflector whose GaAs infrared emitting diode and silicon transistor are assembled in the same package allowing for easy installation and handling.
|
Original
|
NTE3104
NTE3104
|
PDF
|
1N4148 SMD PACKAGE
Abstract: TRANSISTOR SMD CODE PACKAGE SOT23 SMD DIODE 1N4007 smd zener diode code M1 RESISTOR AXIAL 0207 FAIRCHILD 1n4007 smd diode smd zener diode code T2 smd code C2 zener diode bridge rectifier 1N4007 SMD DIODE 1N4007 DATASHEET
Text: Document reference: PCB reference: Date: March, 20 2006 STEVAL-IHT003V1 Company: STMicroelectronics Index Quantity Reference 1 1 Triac 2 1 SCR 3 1 PNP Transistor 4 1 NPN Transistor 5 1 N-Channel Transistor 6 1 Resistor 620 1/4W 1% 7 1 Resistor 470K 1/4W 1%
|
Original
|
STEVAL-IHT003V1
10nF/50V
1N4007
1N4148
O-220
OT-223
OT-23
1N4148 SMD PACKAGE
TRANSISTOR SMD CODE PACKAGE SOT23
SMD DIODE 1N4007
smd zener diode code M1
RESISTOR AXIAL 0207
FAIRCHILD 1n4007 smd diode
smd zener diode code T2
smd code C2 zener diode
bridge rectifier 1N4007
SMD DIODE 1N4007 DATASHEET
|
PDF
|
smps 1000W
Abstract: smps 2000W 2000w smps smps 2000W circuit 1000w smps circuits smps design 1000w 1000W mosfet SGSF663 npn 1000V 100a smps 1000w circuit
Text: 7T2‘Ï237 002122=1 ô • "T'-iV/' S G S -T H O M S O N S G S F 663 HLHOTTRMOlSi S 6 S-TH0MS0N 30E » FASTSWITCH HOLLOW-EMITTER NPN TRANSISTOR ■ HIG H S W IT C H IN G SPEED NPN POWER TRANSISTOR . HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLIC A
|
OCR Scan
|
SGSF663
70kHz
smps 1000W
smps 2000W
2000w smps
smps 2000W circuit
1000w smps circuits
smps design 1000w
1000W mosfet
SGSF663
npn 1000V 100a
smps 1000w circuit
|
PDF
|
