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    NPN TRANSISTOR 10A 70V Search Results

    NPN TRANSISTOR 10A 70V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR 10A 70V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor BD245

    Abstract: BD245C BD245 BD245A BD245 transistor BD245B BD246 EQUIVALENT NPN Transistor VCEO 80V 100V NPN Transistor 10A 70V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD245/A/B/C DESCRIPTION •Collector Current -IC= 10A ·Collector-Emitter Breakdown Voltage: V BR CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C ·Complement to Type BD246/A/B/C


    Original     		PDF BD245/A/B/C BD245; BD245A BD245B; BD245C BD246/A/B/C BD245 BD245B transistor BD245 BD245C BD245 BD245A BD245 transistor BD245B BD246 EQUIVALENT NPN Transistor VCEO 80V 100V NPN Transistor 10A 70V

    MJE3055T

    Abstract: No abstract text available
    Text: SILICON P LASTIC POWER TRANSISTOR NPN MJE3055T 10A 75W Technical Data …designed for general-purpose switching and amplifier application. F F F F DC Current Gain - h FE = 20 – 100 @ IC = 4Adc Collector-Emitter Saturation Voltage – VCE sat = 1.1 Vdc (Max) @ IC = 4Adc


    Original     		PDF MJE3055T O-220 500kHz MJE3055T

    MJE3055

    Abstract: MJE3055T
    Text: MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz Min. TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		PDF MJE3055T O-220 MJE3055 MJE3055T

    MJE3055TTU

    Abstract: No abstract text available
    Text: MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz Min. TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		PDF MJE3055T O-220 MJE3055TTU O-220

    mje3055t

    Abstract: No abstract text available
    Text: MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz Min. 1 TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		PDF MJE3055T O-220 mje3055t

    KSE3055T

    Abstract: No abstract text available
    Text: KSE3055T KSE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz Min. TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		PDF KSE3055T O-220 KSE3055T KSE3055TTU

    Untitled

    Abstract: No abstract text available
    Text: KSE3055T KSE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz Min. TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		PDF KSE3055T O-220

    KSE3055T

    Abstract: No abstract text available
    Text: KSE3055T KSE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz Min. TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		PDF KSE3055T O-220 KSE3055T

    "dual TRANSISTORs" pnp npn

    Abstract: dual npn MLP832 ZXTDE4M832 ZXTDE4M832TA ZXTDE4M832TC power ic 5v 1A 034
    Text: ZXTDE4M832 MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,


    Original     		PDF ZXTDE4M832 "dual TRANSISTORs" pnp npn dual npn MLP832 ZXTDE4M832 ZXTDE4M832TA ZXTDE4M832TC power ic 5v 1A 034

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTC6720MC ZXTDE4M832 MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A


    Original     		PDF ZXTC6720MC ZXTDE4M832

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTC6720MC ZXTDE4M832 MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A


    Original     		PDF ZXTC6720MC ZXTDE4M832

    KSH3055TF

    Abstract: No abstract text available
    Text: KSH3055 KSH3055 General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • • • • • Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ -I “ Suffix) Electrically Similar to Popular KSE3055T


    Original     		PDF KSH3055 KSE3055T 500mA KSE3055 500mA KSH3055ITU O-251 KSH3055TF

    KSE3055

    Abstract: KSH3055
    Text: KSH3055 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATONS D-PACK FOR SURFACE MOUNT APPLICATIONS D-PAK • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I. PACK, “ -I “ Suffix) • Electrically Similar to Popular KSE3055


    Original     		PDF KSH3055 KSE3055 500mA 500KHz KSE3055 KSH3055

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE3055T NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR  DESCRIPTION The UTC MJE3055T is designed for general purpose of amplifier and switching applications.  ORDERING INFORMATION Ordering Number Lead Free Halogen Free


    Original     		PDF MJE3055T MJE3055T MJE3055TL-TA3-T MJE3055TG-TA3-T MJE3055TL-TM3-T MJE3055TG-TM3-T MJE3055TL-TN3-R MJE3055TG-TN3-R O-220 O-251

    transistor power

    Abstract: NPN Transistor 10A 70V dpak code marking JC diode NPN Silicon Power Transistor DPAK CJD3055 npn power transistor ic 400ma marking 33a on semiconductor power transistors NPN, PNP for 500ma, 30v
    Text: Central CJD2955 NPN CJD3055 PNP TM Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD2955, CJD3055 types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount


    Original     		PDF CJD2955 CJD3055 CJD2955, 400mA 500mA, 26-September transistor power NPN Transistor 10A 70V dpak code marking JC diode NPN Silicon Power Transistor DPAK npn power transistor ic 400ma marking 33a on semiconductor power transistors NPN, PNP for 500ma, 30v

    MJE3055

    Abstract: transistor MJE3055 mje3055 transistor MJE3055 TO-225
    Text: MJE3055 NPN TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER 1 Features — 2 3 GENERAL PURPOSE AND SWITCHING APPLICATIONS. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage


    Original     		PDF MJE3055 O-220 O-220 200mA, tp300S, transistor MJE3055 mje3055 transistor MJE3055 TO-225

    2SC2489

    Abstract: 2SA1065 hfe1 2SC248
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2489 DESCRIPTION •Good Linearity of hFE ·Collector-Emitter Sustaining Voltage: VCEO SUS = 150V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SA1065 APPLICATIONS


    Original     		PDF 2SC2489 2SA1065 2SC2489 2SA1065 hfe1 2SC248

    transistor MJE3055

    Abstract: MJE3055
    Text: MJD3055 NPN TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER Features 1 2 3 Designed for general purpose amplifier and low speed switching applications . Electrically simiar to MJE3055. TO-252-2L DC current gain specified to10 Amperes MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF O-251/TO-252-2L MJD3055 O-251 MJE3055. O-252-2L 500KHZ transistor MJE3055 MJE3055

    CJD3055

    Abstract: No abstract text available
    Text: Central" CJD2955 NPN CJD3055 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD2955, CJD3055 types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount pack­


    OCR Scan     		PDF CJD2955 CJD3055 CJD2955, 26-September

    MJE3055

    Abstract: KSH3055 Q02S transistor MJE3055 MJE3055 TO-225
    Text: KSH3055 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS D-PAK • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I.PACK, I ” Suffix) • Electrically Similar to Popular MJE3055


    OCR Scan     		PDF KSH3055 MJE3055 500mA 500mA 500KHz Q02S572 7tb4142 MJE3055 Q02S transistor MJE3055 MJE3055 TO-225

    Untitled

    Abstract: No abstract text available
    Text: KSH3055 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATONS D-PACK FOR SURFACE MOUNT APPLICATIONS D-PAK • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I. PACK, “ -I" Suffix) • Electrically Similar to Popular KSE3055


    OCR Scan     		PDF KSH3055 KSE3055 500mA 500mA 500KHZ

    Untitled

    Abstract: No abstract text available
    Text: KSH3055 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK Lead Formed for Surface Mount Applications No Suffix Straight Lead (I.PACK, I ’ Suffix)


    OCR Scan     		PDF KSH3055 KSE3055 500mA 500mA 500KHz 300fiS,

    transistor MJE3055

    Abstract: MJE3055 MJD3055 1As transistor
    Text: NPN EPITAXIAL SILICON TRANSISTOR MJD3055 GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATONS DPAK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ -I “ Suffix)


    OCR Scan     		PDF MJD3055 MJE3055 500mA 500kHz 300ns, transistor MJE3055 MJE3055 MJD3055 1As transistor

    2NXXXX

    Abstract: NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package
    Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4. \ . v i i I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389


    OCR Scan     		PDF 88DQ0787 fl2S40aa 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1480 2N1481 2N1484 2NXXXX NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package