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    NPN TRANSISTOR 15A 400V Search Results

    NPN TRANSISTOR 15A 400V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR 15A 400V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    npn C 1740

    Abstract: No abstract text available
    Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6678M3A • High Voltage, Fast Switching. • Hermetic TO-254AA Isolated Metal Package. • Ideally suited for PWM Regulators, Power Supplies and Converter Circuits • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		PDF 2N6678M3A O-254AA O-254AA npn C 1740

    Untitled

    Abstract: No abstract text available
    Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6678M3A • High Voltage, Fast Switching. • Hermetic TO-254AA Isolated Metal Package. • Ideally suited for PWM Regulators, Power Supplies and Converter Circuits • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		PDF 2N6678M3A O-254AA O-254AA

    npn darlington 400v 15a

    Abstract: NPN Transistor 10A 400V npn darlington 400v 10a NPN DARLINGTON 10A 400V BUX37 darlington power transistor npn DARLINGTON 10A "Solenoid Drivers" 400V voltage regulator npn transistor 400V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 400V (Min) APPLICATIONS ·Power switching ·Solenoid drivers ·Automotive ignition ·Series and shunt regulators


    Original     		PDF BUX37 150mA npn darlington 400v 15a NPN Transistor 10A 400V npn darlington 400v 10a NPN DARLINGTON 10A 400V BUX37 darlington power transistor npn DARLINGTON 10A "Solenoid Drivers" 400V voltage regulator npn transistor 400V

    NPN Transistor 15A 400V to3

    Abstract: BUV62A NPN 400V 40A NPN 250W LE17 transistor IC 12A 400v
    Text: FAST SWITCHING NPN POWER TRANSISTOR BUV62A • Fast Switching Times • Low Switching Losses • Low Saturation Voltage • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • High Reliability Screening Options Available


    Original     		PDF BUV62A O-204AE) NPN Transistor 15A 400V to3 BUV62A NPN 400V 40A NPN 250W LE17 transistor IC 12A 400v

    Untitled

    Abstract: No abstract text available
    Text: FAST SWITCHING NPN POWER TRANSISTOR BUV62A • Fast Switching Times • Low Switching Losses • Low Saturation Voltage • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • High Reliability Screening Options Available


    Original     		PDF BUV62A O-204AE)

    NTE53

    Abstract: TRANSISTOR 450V 5A NPN 100W
    Text: NTE53 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE53 is a silicon NPN transistor in a TO3 type package designed for high voltage, high - speed power switching in inductive circuits where fall time is critical. This device is particularly suited for


    Original     		PDF NTE53 NTE53 TRANSISTOR 450V 5A NPN 100W

    NTE53

    Abstract: NTE52 220v DC MOTOR pwm NPN Transistor 15A 400V to3 NPN Transistor 10A 400V to3
    Text: NTE53 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high–speed power switching in inductive circuits where fall time is critical. This device is particularly suited for


    Original     		PDF NTE53 NTE52 NTE53 220v DC MOTOR pwm NPN Transistor 15A 400V to3 NPN Transistor 10A 400V to3

    NTE2319

    Abstract: No abstract text available
    Text: NTE2319 Silicon NPN Transistor High Voltage, High Speed Power Switch Description: The NTE2319 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line–operated


    Original     		PDF NTE2319 NTE2319 800ns

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    NTE2550

    Abstract: NPN DARLINGTON 10A 500V 50W 400V 10A NPN transistor
    Text: NTE2550 Silicon NPN Transistor Darlington Driver, Switch Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V


    Original     		PDF NTE2550 NTE2550 NPN DARLINGTON 10A 500V 50W 400V 10A NPN transistor

    BUX48

    Abstract: TRANSISTOR BIPOLAR 400V 20A 10a 400v bipolar transistor BUX48A
    Text: BUX48 High Power Bipolar Transistor High Voltage Switching Features: • Collector-Emitter sustaining voltageVCEO sus = 400V (Minimum) - BUX48 = 450V (Minimum) - BUX48A. • Collector-Emitter saturation voltageVCE(sat) = 1.5V (Maximum) at IC = 10A for BUX48


    Original     		PDF BUX48 BUX48A. BUX48A BUX48 TRANSISTOR BIPOLAR 400V 20A 10a 400v bipolar transistor BUX48A

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


    Original     		PDF DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E

    MJE130076

    Abstract: 2n6946 tipi transistor 2N6122 transistor TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A
    Text: General Transistor Corporation GASE TO-220 IC M A X = Vceo(SUS> = 1-15A 30-400V POWER TRANSISTORS (V) DEVI CE TYPE DARLINGTON SWITCHING NPN PM> REsiSTTVESwrrc hi•9 1C MuVMu (A) la M u t»Mu (|1 » C ) 1 yes yes yes TIP29 TIP29A TIP29B TIP29C TIP47 TIP48


    OCR Scan     		PDF O-220 0-400V TIP29 TIP30 TIP29A TIP30A TIP29B TIP30B TIP29C TIP30C MJE130076 2n6946 tipi transistor 2N6122 transistor

    Untitled

    Abstract: No abstract text available
    Text: GENERAL SEMICONDUCTOR 3918590 GENERAL .jír ^ TS » r i B i l ñ S T O OOOB144 S EMI CON DU CT OR General Semiconductor . Industries, Inc. 95D 02144 D 15 Am p NPN 300, 350, 400V 2N6653, 54, 55 SQ U H BEn COMPANY X G SR 15030,35,40 C 2R H IG H SPEED /H IG H PO W ER SW ITCH IN G T R A N S IS T O R S


    OCR Scan     		PDF OOOB144 2N6653, P6302 7B92A 67QtiH X910-950-1942

    NPN Transistor 15A 400V to3

    Abstract: 2N6563 350V transistor npn 15a 2N6547 2N6561 JAN2N6546 SDT13301-SDTI3305 transistor 500v 0.5a transistor npn 10mhz 500v S65C
    Text: ^/òlitron [^ ©tSDCT ©ÄTTÄIL Devices. Inc. VERY HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available


    OCR Scan     		PDF 305mm) JAN2N6546, 2N6547. 2N6561, 2N6563, SDT13301-SDTI3305 NPN Transistor 15A 400V to3 2N6563 350V transistor npn 15a 2N6547 2N6561 JAN2N6546 transistor 500v 0.5a transistor npn 10mhz 500v S65C

    GSDU7530

    Abstract: GSDU7535 GSDU7540 GSOU7540 TWX910-950-1942
    Text: SÖUARE D CO/ GE NE RAL ^ D • ÔS2S50Ô 00DS17Ö 3 9 1 8 5 9 0 GENERAL SEMICONDUCTOR ' ^ General ^ ^ Semiconductor ^ Industries, Inc. S 95D 0 2 1 7 8 D _ NPN 300, 350, 400V 7.5 Amp GSDU7530, 35, 40 B O U H R E T I COHPHWY C 2 r® C2 r HIGH SPEED/HIGH POWER SWITCHING TRANSISTORS


    OCR Scan     		PDF 00D217Ã GSDU7530, GSDU7530 GSDU7535 TQ-204AA TWX910-950-1942 GSDU7540 GSOU7540 TWX910-950-1942

    JAN2N3846

    Abstract: JAN2N3847 SDT14304 SDT14305 SDT14414 NPN Transistor 10A 400V to3 npn power 20a 200v
    Text: jg m m ^alîtran Devices. Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUM BER FORMERLY 14 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)


    OCR Scan     		PDF 305mm) JAN2N3846 JAN2N3847 SDT14304 SDT14305 SDT14414 NPN Transistor 10A 400V to3 npn power 20a 200v

    sdt14304

    Abstract: 041m 200V transistor npn 20a
    Text: -Jfotttran PlËM (yj(§¥ Ä1TM,©( Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUM BER (FORMERLY 14) c^lcrfl CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)


    OCR Scan     		PDF 305mm) 12MHz 12MHz 600pF sdt14304 041m 200V transistor npn 20a

    2NXXXX

    Abstract: NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package
    Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4. \ . v i i I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389


    OCR Scan     		PDF 88DQ0787 fl2S40aa 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1480 2N1481 2N1484 2NXXXX NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    200V transistor npn 20a

    Abstract: Transistor 200V 20A 2N3846 200V transistor npn 10a
    Text: SOLITRON DEVICES INC flt D E|a3tflb O B ODOESbO t 7" - 3 3 - 0 $ 114 ELEMENT NUMBER MEDIUM TO HIGH VOLTAGE, FAST SWITCHNG NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT M ETALLIZATIO N Base and emitter: > F O R M E R L Y 14 5 0 . 0 0 0 A Aluminum Collector: Gold


    OCR Scan     		PDF 99mml 600pF 600pF SDT14305, 2N3846, SDT14414, 200V transistor npn 20a Transistor 200V 20A 2N3846 200V transistor npn 10a

    2N4293

    Abstract: 2N4918 2N4919 2N4920 2N4921 2N4922 2N5190 MJE13002 MJE13003 MJE340
    Text: General Transistor Corporation CASE TO-126 IC MAX = .5-4A V c e o (SUS) = 40-400V POWER TRANSISTORS kCONT (A) MAX VCEO (V) 0.5 1.0 300 40 60 80 300 400 40 40 NOTES: VCEV <V) yes • yes • 600 400 yes 60 60 60 60 yss 80 80 80 80 yes yes yes yes ‘ hfe 01 MHz


    OCR Scan     		PDF O-126 0-400V MJE340 2N4921 2N4918 2N4922 2N4919 2N4293 2N4920 MJE13002 2N5190 MJE13002 MJE13003

    2N4033

    Abstract: 2N2906A mjeI3003 Darlington transistor 2N2905 2N2904 PNP Transistor 3N3251 2N5190 MJE13003 transistor 2N4293 2N4918
    Text: General Transistor Corporation CASE le TO-126 MAX V c e o (SUS) * .5-4A = 40-400V POWER TRANSISTORS kCONT (A) MAX VCEO (V) 0.5 1.0 300 40 60 80 VCEV <V) 300 400 40 40 NOTES: yes • yes • 600 400 yes 60 60 60 60 yss 80 80 80 80 yes yes yes yes ‘ hfe 0 1 MHz


    OCR Scan     		PDF O-126 0-400V Wab029C MJE340 2N4921 2N4918 2N4922 2N4919 2N4293 2N4920 2N4033 2N2906A mjeI3003 Darlington transistor 2N2905 2N2904 PNP Transistor 3N3251 2N5190 MJE13003 transistor

    solitrondevices

    Abstract: Solitron transistor c47
    Text: 8368602 SOL ITRON D E V I C E S INC TS 95 D 0 2 8 3 7 D 3 DE |fi3bflbaa 000S037 1 |"~ Devices, inc. M EDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 14 CHIP N U M BER CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum


    OCR Scan     		PDF 000S037 305mm) solitrondevices Solitron transistor c47