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    NPN TRANSISTOR 5 WATTS Search Results

    NPN TRANSISTOR 5 WATTS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR 5 WATTS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pmd18k100

    Abstract: TO3 package NPN transistor collector base and emitter 100V 10-9The
    Text: SEME PMD18K100 LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. FEATURES 2. 5 20.3 max. E 30.1 1 .0 B • • • • TO3 PACKAGE 100V 60A PEAK 240 WATTS 16.9 39.5 max. 4.2 DESCRIPTION 10.9 The PMD18K100 is an NPN Darlington


    Original     		PDF PMD18K100 PMD18K100 100mA 300ms, TO3 package NPN transistor collector base and emitter 100V 10-9The

    HF5-12F

    Abstract: ASI10590
    Text: HF5-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF5-12F is Designed for broadband operation in commercial and amateur communication equipment up to 30 MHz. PACKAGE STYLE .380 4L FLG FEATURES: B .112 x 45° A E • PG = 20 dB min. at 5 W/30 MHz


    Original     		PDF HF5-12F HF5-12F ASI10590

    MJD127T4

    Abstract: npn darlington transistor 150 watts 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125
    Text: MJD122 NPN MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS Features


    Original     		PDF MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD127T4 npn darlington transistor 150 watts 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125

    MJL3281A MJL1302A

    Abstract: mjl3281a MJL3281A-D MJL1302A complementary npn-pnp power transistors
    Text: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors


    Original     		PDF MJL3281A* MJL1302A* MJL3281A MJL1302A r14525 MJL3281A/D MJL3281A MJL1302A MJL3281A-D complementary npn-pnp power transistors

    PTB 20245

    Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ
    Text: e PTB 20245 35 Watts, 2.1–2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output power for PEP applications, it is


    Original     		PDF G-200 1-877-GOLDMOS 1301-PTB PTB 20245 RF NPN POWER TRANSISTOR C 10-12 GHZ

    BUV23

    Abstract: motorola transistor 0063
    Text: MOTOROLA Order this document by BUV23/D SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications.


    Original     		PDF BUV23/D* BUV23/D BUV23 motorola transistor 0063

    Johanson Piston Trimmer

    Abstract: G200 RF TRANSISTOR 2GHZ
    Text: e PTB 20125 100 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20125 is an NPN, push-pull RF power transistor intended for 26 Vdc class AB operation from 1.8 to 2.0 GHz. Rated at 100 watts PEP minimum output power, it is specifically intended for operation as a


    Original     		PDF 1-877-GOLDMOS 1301-PTB Johanson Piston Trimmer G200 RF TRANSISTOR 2GHZ

    Johanson Piston Trimmer

    Abstract: Transistor 025l
    Text: e PTB 20235 70 Watts, 2.1–2.2 GHz Wideband CDMA Power Transistor Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP power output, it is specifically intended for operation as a final stage


    Original     		PDF 1-877-GOLDMOS 1301-PTB Johanson Piston Trimmer Transistor 025l

    NTE359

    Abstract: 8-32N
    Text: NTE359 Silicon NPN Transistor RF & Microwave Transistor Description: RF Power Transistor 20W − 175 MHz Features: Specified 28 Volt, 175MHz Characteristics Output Power = 20 Watts Minimum Gain = 8.2dB Efficiency = 60% Characterized from 125 to 175MHz Includes Series Equivalent Impedances


    Original     		PDF NTE359 175MHz 175MHz 8-32-NC-3A NTE359 8-32N

    BUV21

    Abstract: No abstract text available
    Text: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistor BUV21 . . . designed for high speed, high current, high power applications. 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS • High DC current gain: • • hFE min. = 20 at IC = 12 A


    Original     		PDF BUV21 r14525 BUV21/D BUV21

    BUV60

    Abstract: BUV20
    Text: ON Semiconductort BUV20 BUV60 SWITCHMODEt Series NPN Silicon Power Transistor . . . designed for high speed, high current, high power applications. 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS • High DC current gain: • • hFE min = 20 at IC = 25 A


    Original     		PDF BUV20 BUV60 r14525 BUV20/D BUV60 BUV20

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2628 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2628 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm C 1 .5 M A X


    OCR Scan     		PDF 2SC2628 2SC2628 175MHz 175MHz,

    Untitled

    Abstract: No abstract text available
    Text: b 3 b 7 5 S ll G l O l S i a t m • MOTb Order this data sheet by BSP52T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP52T1 NPN Small-Signal Darlington Transistor Motorola Preferred Device This NPN small signal darlington transistor is designed for use In switching applications,


    OCR Scan     		PDF BSP52T1/D BSP52T1 OT-223 BSP52T1 inch/1000 BSP52T3

    TZ 1167

    Abstract: bu208D U/25/20/TN26/15/850/TZ 1167
    Text: MOTOROL A SC XSTRS/R 15E F D I b3b75SM □0ÜM7Tfl 3 | T -3 3 ^ MOTOROLA SEMICONDUCTOR TECHNICAL DATA 5 AM PERES NPN SILICON HORIZONTAL DEFLECTION TRANSISTOR WITH INTEGRATED DAM PER DIO DE NPN SILICON POWER TRANSISTORS . . . specifically designed fo r use in large scree n color d eflection


    OCR Scan     		PDF b3b75SM TZ 1167 bu208D U/25/20/TN26/15/850/TZ 1167

    Motorola 2N6083

    Abstract: sem 2106 2N6083
    Text: MOTOROLA SC XSTRS/R F 4bE D b3tj?2S4 00^4120 MOTOROLA Ô MOTb T -3 5 ~ u • SEM ICONDUCTOR i TECHNICAL DATA 2N6083 The R F Line 30 W - 175 MHz 2 RF POWER TRANSISTOR NPN S IL IC O N NPN SILICON RF POWER TRANSISTORS . . . designed for 1 2.5 V o lt V H F large-signal am plifier applications


    OCR Scan     		PDF 2N6083 Motorola 2N6083 sem 2106 2N6083

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BUH50/D SEMICONDUCTOR TECHNICAL DATA BUH50 D esigner’s Data Sheet POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS SWITCHMODE NPN Silicon Planar Power Transistor T h e B U H 5 0 has an a p p lic a tio n s p e c ific s t a t e - o f- a r t d ie d e s ig n e d fo r use in


    OCR Scan     		PDF BUH50/D BUH50 21A-06 O-220AB

    C 829 transistor

    Abstract: No abstract text available
    Text: M GTORCLA SC 12E D § k3t72S>l 0085573 5 | X S TR S/ R F T - 3 3 -J 7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA T ' 4 ~3l0 MJD148 N P N Silicon Pow er Transistor DPAK For Surface Mount Applications • • • • • • NPN SILICON POWER TRANSISTORS 4 AMPERES


    OCR Scan     		PDF k3t72S MJD148 C 829 transistor

    2N1479

    Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
    Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863


    OCR Scan     		PDF O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5781 2N5782 2N5786

    ym 238

    Abstract: transistor 237 Bo 235 transistor bd 126 BD237 transistor sc 238 motorola transistor m 237 BO237
    Text: "nOTOROLA SC -CXSTRS/R F> 6367254 MOTOROLA SC Tt 9 6D 8 0 5 7 3 CXSTRS/R F D T-33-09 BD233 BD235 BD237 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2 AMPERE POWER TRANSISTOR P LA STIC M E D IU M POW ER S IL IC O N N P N TR A N S IS TO R NPN SILICO N . . . designed for use in 5 to 10 Watt audio amplifiers and drivers


    OCR Scan     		PDF T-33-09 BD233 BD235 BD237 3b7254 ym 238 transistor 237 Bo 235 transistor bd 126 BD237 transistor sc 238 motorola transistor m 237 BO237

    TO63 package

    Abstract: 2N5250 2N3265 transistor 114 2N5539 2N3150 2N3266 2N3847 2N4002 2N4003
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 1*FE@ Ic/ V ce (min/max @ A/V) VcE(sat) @ I c/I b (V @ A/A) p“ d * WATTS Ìt (MHz) NPN TO-63 2N3265 90 20 25-55@15/2 l@20/2 100 20 2N3266 60 20 20-80@15/3


    OCR Scan     		PDF 2N3265 2N3266 2N3846 2N3847 2N4002 2N4003 2N5539 2N6046 2N6047 2N6048 TO63 package 2N5250 transistor 114 2N3150

    TRANSISTOR 2N4289

    Abstract: Q4006at 2N2222A mps quadrac Q5010A NPN transistor 2n2222A Q4010LT 2N39Q3 Q6015A lora
    Text: LO RA S INDUSTRIES INC MEE D • 5500440 OGGDQET G H L O R A TRANSISTOR PART No TYPE PACKAGE T O - 1 8 Package 2N0918 2N2221 :2N2222 2N2222A NPN NPN NPN NPN DESCRIPTION Pt @25°C Watts !<¿ Amps -r - n~? i 1 t-U\ VEBO Volts VCEO Volts VCBO Volts Hfe Hfe \ç


    OCR Scan     		PDF 2N0918 2N2221 2N2222 2N2222A 2N3646 2N3692 2N3702 2N3706 2N3709 t0220ab/i TRANSISTOR 2N4289 Q4006at 2N2222A mps quadrac Q5010A NPN transistor 2n2222A Q4010LT 2N39Q3 Q6015A lora

    MJ413

    Abstract: J413M mj423 motorola WS300
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J413 M J423 High-Voltage NPN Silicon Transistors 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS . . . designed for m edium -to-high voltage inverters, converters, regulators and switching circuits. • •


    OCR Scan     		PDF MJ413 MJ423 J413M mj423 motorola WS300

    transistor D318

    Abstract: d318 transistor transistor D317 BD317 BD318 d318 80592
    Text: motorola -c x s t r s / r sc .6367254 f MOTOROLA > » T Jt.3t.7aS 4 SC CXSTRS/R F 96D NPN MOTOROLA BD317, BD318 C O M PLEM ENTARY SILICO N HIGH-POWER TRANSISTO RS . designed for high' quality amplifiers operating up to 100 Watts into 4 ohm load with BD31S, BD316 and into 8 ohm load with BD317,


    OCR Scan     		PDF BD315, BD316 BD317, BD318 BD31S, BD318. AN-415) transistor D318 d318 transistor transistor D317 BD317 BD318 d318 80592

    transistor s71

    Abstract: 2N1489 2N5671 2N1487 2N1488 2N1490 2N3055A 2N3713 2N3714 2N3771
    Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE DEVICE TYPE Vceo sus VOLTS Ic (max) AMPS 1*FE@ I f / V c E V c E (ja t) (min/max @ A/V) @ Ic^B (V @ A/A) p * r D WATTS fT (MHz) NPN 2N1487 40 6 [email protected]/4 [email protected]/.3 75 1.0 TO-3 2N1488 55 6 15-45@ 1.5/4


    OCR Scan     		PDF 2N1487 2N1488 2N1489 2N1490 2N3055A 2N3713 2N3714 2N3715A 2N3716A 2N3771 transistor s71 2N5671