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    NPN TRANSISTOR MARKING CODE 6C Search Results

    NPN TRANSISTOR MARKING CODE 6C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR MARKING CODE 6C Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C2320

    Abstract: Q62702-C2320 BC 170 transistor TRANSISTOR c2324 transistor 6cs ic 817 transistor 6bs 6CS transistor transistor bc icbo nA npn Q62702-C2278
    Text: BC 817-16W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807W, BC808W PNP Type Marking Ordering Code Pin Configuration Package


    Original
    17-16W BC807W, BC808W Q62702-C2320 OT-323 17-25W Q62702-C2278 17-40W C2320 Q62702-C2320 BC 170 transistor TRANSISTOR c2324 transistor 6cs ic 817 transistor 6bs 6CS transistor transistor bc icbo nA npn Q62702-C2278 PDF

    TRANSISTOR S1d

    Abstract: Q62702-A1243 SCT-595
    Text: SMBTA 42M NPN Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 92M PNP 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration SMBTA 42M s1D Q62702-A1243 Package


    Original
    VPW05980 Q62702-A1243 SCT-595 Jun-18-1997 EHP00842 EHP00843 TRANSISTOR S1d Q62702-A1243 SCT-595 PDF

    transistor f 948

    Abstract: TRANSISTOR bdp 948 BDP947 BDP949 Q62702-D1336 Q62702-D1338 f 948
    Text: BDP 948 PNP Silicon AF Power Transistor • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP947, BDP949 NPN Type Marking Ordering Code Pin Configuration


    Original
    BDP947, BDP949 Q62702-D1336 OT-223 Q62702-D1338 Nov-28-1996 transistor f 948 TRANSISTOR bdp 948 BDP947 BDP949 Q62702-D1336 Q62702-D1338 f 948 PDF

    Q62702-D1342

    Abstract: D134 d1340 BDP951 BDP955 Q62702-D1340 Q62702-D1344
    Text: BDP 952 PNP Silicon AF Power Transistor • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP951.BDP955 NPN Type Marking Ordering Code Pin Configuration


    Original
    BDP951. BDP955 Q62702-D1340 OT-223 Q62702-D1342 Q62702-D1344 Nov-28-1996 Q62702-D1342 D134 d1340 BDP951 BDP955 Q62702-D1340 Q62702-D1344 PDF

    A1244

    Abstract: NPN S2D Q62702-A1244 SCT-595
    Text: SMBTA 92M PNP Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 42M NPN 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration SMBTA 92M s2D Q62702-A1244 Package


    Original
    VPW05980 Q62702-A1244 SCT-595 Mar-13-1998 EHP00881 EHP00882 A1244 NPN S2D Q62702-A1244 SCT-595 PDF

    BC 170 transistor

    Abstract: No abstract text available
    Text: SIEMENS BC 817-16W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emltter saturation voltage • Complementary types: BC807W, BC808W PNP Type Marking Ordering Code Pin Configuration


    OCR Scan
    17-16W BC807W, BC808W OT-323 Q62702-C2321 18-16W Q62702-Ã 18-25W Q62702-C2323 18-40W BC 170 transistor PDF

    Q62702-D1340

    Abstract: p952
    Text: SIEMENS BDP 952 PNP Silicon AF Power Transistor • For AF drivers and output stages • High collector current • High current gain • Low coliector-emitter saturation voltage • Complementary type: BDP951.BDP955 NPN Marking Ordering Code Pin Configuration


    OCR Scan
    BDP951. BDP955 Q62702-D1340 Q62702-D1342 Q62702-D1344 OT-223 OT-223 300tis; p952 PDF

    BC 170 transistor

    Abstract: bc 471 transistor bc 470 Q62702-C2320 6bs transistor SOT-323 N transistor 6cs 1B marking transistor marking 6Bs bc 170 c sot 323 lb
    Text: SIEMENS BC 817W BC 818W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807W, BC808W PNP Type Marking Ordering Code BC 817-16W


    OCR Scan
    BC807W, BC808W 17-16W 17-25W 17-40W 18-16W 18-25W 18-40W Q62702-C2320 Q62702-C2278 BC 170 transistor bc 471 transistor bc 470 6bs transistor SOT-323 N transistor 6cs 1B marking transistor marking 6Bs bc 170 c sot 323 lb PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCP 51M . BCP53M PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M.BCP 56M NPN Type Marking Ordering Code Pin Configuration BCP 51M


    OCR Scan
    BCP53M Q62702-C2592 Q62702-C2593 Q62702-C2594 SCT-595 6E35bOS 02BShD5 B35b05 PDF

    TRANSISTOR S1d

    Abstract: AX 1101
    Text: SIEMENS SMBTA 42M NPN Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 92M PNP m h Q62702-A1243 CO II s1D o SMBTA 42M Pin Configuration PO II Marking Ordering Code CD Type


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    Q62702-A1243 SCT-595 EHP00844 TRANSISTOR S1d AX 1101 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PZTA 42 NPN Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: PZTA 92 PNP Type Marking Ordering Code Pin Configuration PZTA 42 PZTA 42 Q62702-Z2035 1=B 2=C Package 3=E


    OCR Scan
    Q62702-Z2035 OT-223 Jan-21-1999 100MHz PDF

    42RA

    Abstract: No abstract text available
    Text: SIEMENS PZTA 42 NPN Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: PZTA 92 PNP Type Marking Ordering Code Pin Configuration PZTA 42 PZTA 42 Q62702-Z2035 1=B 2=C Package 3=E


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    Q62702-Z2035 OT-223 Jan-21-1999 100MHz Jan-21 42RA PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 512 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, drive circuit »Built in bias resistor R1=4.7kiî, R2=4.7kfi Type Marking Ordering Code Pin Configuration BCR 512 XFs 1= B Q62702-C2445 Package 2=E 3=C SOT-23


    OCR Scan
    Q62702-C2445 OT-23 300ns; PDF

    transistor 2222a

    Abstract: transistor 2222a CURRENT GAIN EHN0005 2222a sot23 2222A transistor
    Text: SIEMENS SMBT 2222A NPN Silicon Switching Transistor • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP Type Marking Ordering Code Pin Configuration SMBT 2222A s1 B Q68000-A6481 1=B


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    Q68000-A6481 OT-23 EHN0005 EHN00056 10CK2, Jan-22-1999 transistor 2222a transistor 2222a CURRENT GAIN 2222a sot23 2222A transistor PDF

    transistor t07

    Abstract: t07 transistor
    Text: SIEMENS BCR 519 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R-|=4.7kil _GL ET Ordering Code Pin Configuration XKs UPON INQUIRY 1 =B Package II CO O Marking BCR 519 LU II CVJ


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    OT-23 53SbQS transistor t07 t07 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 112 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=4.7ki2, R2=4.7k£2 Pin Configuration Q62702-C2254 1 =B Package II CO Ordering Code WFs O Marking BCR 112 LU II CNJ


    OCR Scan
    Q62702-C2254 OT-23 0535b05 PDF

    Q62702C2253

    Abstract: transistor bI 240 108 Marking Q62702-C2253
    Text: SIEMENS BCR 108 NPN Silicon Digital Transistor 1Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=2.2ki2, R2=47kii Pin Configuration BCR 108 WHs 1= B Q62702-C2253 Package O II CO Marking Ordering Code LU II CVJ Type


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    47kii) Q62702-C2253 OT-23 Q62702C2253 transistor bI 240 108 Marking Q62702-C2253 PDF

    SOT23 KJA

    Abstract: No abstract text available
    Text: SIEMENS BCR 135 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=2.2kiî, R2=47kft Marking Ordering Code Pin Configuration BCR 135 WJs 1 =B Package UJ II CNJ Q62702-C2257 CO II O Type


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    47kft) Q62702-C2257 OT-23 Resistan200 SOT23 KJA PDF

    KTY 14-6

    Abstract: Siemens KTY
    Text: SIEMENS BCR 146 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1=47kil, R2=22kn Marking Ordering Code Pin Configuration BCR 146 WLs 1=B Q62702-C2260 Package o II CO Type 2=E SOT-23


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    47kil, Q62702-C2260 OT-23 300ns; KTY 14-6 Siemens KTY PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBTA 42 NPN Silicon Transistor for High Voltages • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 92 PNP Type Marking Ordering Code Pin Configuration SMBTA 42 s1 D Q68000-A6482 1=B 2=E Package


    OCR Scan
    Q68000-A6482 OT-23 Jan-22-1999 PDF

    WFs transistor

    Abstract: Siemens transistor WFs wfs marking
    Text: SIEMENS BCR 112 NPN Silicon Digital Transistor >Switching circuit, inverter, inferface circuit, driver circuit «Built in bias resistor Ri=4.7kQ, R2=4.7kfl BCR 112 WFs Pin Configuration Q62702-C2254 1= B Package 2=E O Marking Ordering Code 05 II Type SOT-23


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    Q62702-C2254 OT-23 300tis; WFs transistor Siemens transistor WFs wfs marking PDF

    wgs SOT-23

    Abstract: transistor B 116 transistor marking code wgs Q62702-C2337 marking WGs
    Text: SIEMENS BCR 116 NPN Silicon Digital Transistor •Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R-|=4.7k£i, R2=47ki2 1= B Q62702-C2337 Package 2=E II Pin Configuration WGs o Marking Ordering Code BCR 116 CO Type


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    47ki2) Q62702-C2337 OT-23 300ns; wgs SOT-23 transistor B 116 transistor marking code wgs Q62702-C2337 marking WGs PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 148 NPN Silicon Digital Transistor ►Switching circuit, inverter, interface circuit, driver circuit » Built in bias resistor Ri=47kfl, R2=47kfi Type Marking Ordering Code Pin Configuration BCR 148 WEs Q62702-C2261 1 =B Package 2= E 3=C SOT-23


    OCR Scan
    47kfl, 47kfi) Q62702-C2261 OT-23 0235b05 Q12Q7b5 015D7bB PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBT 2222A NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP Type Marking Ordering Code Pin Configuration SMBT 2222A s1B Q68000-A6481 1=B


    OCR Scan
    Q68000-A6481 OT-23 Jan-22-1999 PDF