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    NPT35015D Price and Stock

    MACOM NPT35015D

    RF MOSFET HEMT 28V 8SOIC
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    Richardson RFPD NPT35015D 95
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    NPT35015D Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NPT35015D MACOM HEMT N-CH 28V 18W 3300-3800MHZ Original PDF
    NPT35015D MACOM HEMT N-CH 28V 18W 3300-3800MHZ Original PDF

    NPT35015D Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power


    Original     		PDF NPT35015 EAR99 NDS-005

    NPT35015

    Abstract: NPT35015D r04350 12061C103KAT2A EAR99 JESD22-A114 JESD22-A115 j146 NPT35015DT
    Text: NPT35015 Datasheet Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3000 - 6000MHz • 18W P3dB CW Power


    Original     		PDF NPT35015 6000MHz EAR99 NDS-005 NPT35015D r04350 12061C103KAT2A JESD22-A114 JESD22-A115 j146 NPT35015DT

    Untitled

    Abstract: No abstract text available
    Text: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power


    Original     		PDF NPT35015 EAR99 NDS-005