560-2 LL2
Abstract: 560-2ll2 560-2 LL2 EN132400 Y1-250V 560-2 LL2 ns ECKDNA222ME ns-a472 560-2 LL2 EN132400 Y1-250V en132400 560-2 ll2 ECKDNA472ME
Text: Ceramic Disc Capacitors Type NS-A Ceramic Disc Capacitors for Safety Regulations (Type: NS-A/IEC384-14 2nd Ed. Sub-class Y1 and UL 250V) NS-A Type: • Features ■ Specifications ● Type NS-A, which is a revised type designation from our previous type designation of NS for ÒClass II
|
Original
|
NS-A/IEC384-14
IEC384-14
UL1414/250
EN60065.
EN132400
ECKDNA472ME
Y1-250V~
Y1-250V
560-2 LL2
560-2ll2
560-2 LL2 EN132400 Y1-250V
560-2 LL2 ns
ECKDNA222ME
ns-a472
560-2 LL2 EN132400
Y1-250V
en132400 560-2 ll2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: POR004 Effective: 3/10/2014 PREFERRED DISTRIBUTOR PRICE LIST PORTABLE CORD Yellow 90 Yellow 90 Yellow 105 Super Vu-Tron Supreme Gauge SOOW SJOOW SOOW SJOOW SOOW SEOOW SJEOOW 18/2 353.34 320.4 NS NS NS 353.34 320.40 18/3 458.5 376.33 479.86 393.58 NS 458.50
|
Original
|
POR004
|
PDF
|
Untitled
Abstract: No abstract text available
Text: POR005 Effective: 5/5/2014 PREFERRED DISTRIBUTOR PRICE LIST PORTABLE CORD Yellow 90 Yellow 90 Yellow 105 Super Vu-Tron Supreme Gauge SOOW SJOOW SOOW SJOOW SOOW SEOOW SJEOOW 18/2 374.54 339.62 NS NS NS 374.54 339.62 18/3 486.01 398.9 508.65 417.19 NS 486.01
|
Original
|
POR005
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION CY14E256L 256-Kbit 32K x 8 nvSRAM Features Functional Description • 25 ns, 35 ns and 45 ns Access Times • “Hands-off” Automatic STORE on Power Down with external 68µF capacitor • STORE to QuantumTrap Nonvolatile Elements is
|
Original
|
CY14E256L
256-Kbit
100-Year
CY14E256L
|
PDF
|
CY14E256L
Abstract: CY14E256L-SZ25XC CY14E256L-SZ25XCT CY14E256L-SZ25XI CY14E256L-SZ25XIT STK14C88
Text: CY14E256L 256 Kbit 32K x 8 nvSRAM Features Functional Description • 25 ns, 35 ns, and 45 ns Access Times ■ Pin Compatible with STK14C88 ■ Hands Off Automatic STORE on Power Down with External 68 µF Capacitor ■ STORE to QuantumTrap Nonvolatile Elements is Initiated by
|
Original
|
CY14E256L
STK14C88
32-pin
CY14E256L
CY14E256L-SZ25XC
CY14E256L-SZ25XCT
CY14E256L-SZ25XI
CY14E256L-SZ25XIT
STK14C88
|
PDF
|
Untitled
Abstract: No abstract text available
Text: THIS SPEC IS OBSOLETE Spec No: 001-06968 Spec Title: CY14E256L 256 KBIT 32K X 8 NVSRAM Sunset Owner: Girija Chougala (GVCH) Replaced by: None CY14E256L 256 Kbit (32K x 8) nvSRAM Features Functional Description • 25 ns, 35 ns, and 45 ns Access Times ■
|
Original
|
CY14E256L
CY14E256L
|
PDF
|
CY14E256L
Abstract: CY14E256L-SZ25XC CY14E256L-SZ25XCT CY14E256L-SZ25XI CY14E256L-SZ25XIT STK14C88
Text: CY14E256L 256 Kbit 32K x 8 nvSRAM Functional Description • 25 ns, 35 ns, and 45 ns Access Times ■ Pin Compatible with STK14C88 ■ Hands Off Automatic STORE on Power Down with External 68 µF Capacitor ■ STORE to QuantumTrap Nonvolatile Elements is Initiated by
|
Original
|
CY14E256L
STK14C88
CY14E256L
CY14E256L-SZ25XC
CY14E256L-SZ25XCT
CY14E256L-SZ25XI
CY14E256L-SZ25XIT
STK14C88
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CY14E256L 256 Kbit 32K x 8 nvSRAM Features Functional Description • 25 ns, 35 ns, and 45 ns access times ■ Pin compatible with STK14C88 ■ Hands off automatic STORE on power down with external 68 µF capacitor ■ STORE to QuantumTrap nonvolatile elements is initiated by
|
Original
|
CY14E256L
CY14E256L
|
PDF
|
CY22E016L
Abstract: CY22E016L-SZ25XC CY22E016L-SZ25XCT CY22E016L-SZ35XCT BUT14
Text: CY22E016L 16 Kbit 2K x 8 nvSRAM Features Functional Description • 25 ns, 35 ns, and 45 ns access times ■ Hands off automatic STORE on power down with external 68 F capacitor ■ STORE to QuantumTrap nonvolatile elements is initiated by hardware or AutoStore on power down
|
Original
|
CY22E016L
CY22E016L
CY22E016L-SZ25XC
CY22E016L-SZ25XCT
CY22E016L-SZ35XCT
BUT14
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY CY22E016L 16-Kbit 2K x 8 nvSRAM Features Functional Description • 25 ns, 35 ns and 45 ns Access Times The Cypress CY22E016L is a fast static RAM with a nonvolatile element incorporated in each static memory cell. The SRAM can be read and written an infinite number of times,
|
Original
|
CY22E016L
16-Kbit
100-Year
CY22E016L
|
PDF
|
CY22E016L
Abstract: CY22E016L-SZ25XCT CY22E016L-SZ35XCT CY22E016L-SZ35XIT BUT14
Text: PRELIMINARY CY22E016L 16-Kbit 2K x 8 nvSRAM Features Functional Description • 25 ns, 35 ns and 45 ns Access Times The Cypress CY22E016L is a fast static RAM with a nonvolatile element incorporated in each static memory cell. The SRAM can be read and written an infinite number of times,
|
Original
|
CY22E016L
16-Kbit
CY22E016L
CY22E016L-SZ25XCT
CY22E016L-SZ35XCT
CY22E016L-SZ35XIT
BUT14
|
PDF
|
CY22E016L
Abstract: CY22E016L-SZ25XC CY22E016L-SZ25XCT CY22E016L-SZ35XCT BUT14
Text: CY22E016L 16 Kbit 2K x 8 nvSRAM Features Functional Description • 25 ns, 35 ns and 45 ns access times ■ Hands off automatic STORE on power down with external 68 F capacitor ■ STORE to QuantumTrap non-volatile elements is initiated by hardware or AutoStore on power down
|
Original
|
CY22E016L
CY22E016L
CY22E016L-SZ25XC
CY22E016L-SZ25XCT
CY22E016L-SZ35XCT
BUT14
|
PDF
|
NS472
Abstract: No abstract text available
Text: BNC Connectors 1.08 Catalog Number .43 NS-4721-1 .30 .50Ø .050Ø 3/8 - 32 THD. SINGLE "D" FLAT 75 Ω BNC Panel Mount w/ Solder Cup .90 Catalog Number .24 NS-4721-3 .17 .43 .040Ø .40Ø .50Ø 3/8 - 32 THD. SINGLE "D" FLAT 75 Ω BNC Panel Mount w/ Solder Post
|
Original
|
NS-4721-1
NS-4721-3
NS-6965-1
NS472
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CY14E064L PRELIMINARY 64-Kbit 8K x 8 nvSRAM Features Functional Description • 25 ns and 45 ns Access Times The Cypress CY14E064L is a fast static RAM with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology producing the
|
Original
|
CY14E064L
64-Kbit
100-Year
CY14E064L
28-pin
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: Am90C255 256K x 1 CMOS Nibble Mode Dynamic RAM Am90C255 PRELIMINARY DISTINCTIVE CHARACTERISTICS • • • • High density 256K x 1 Low-power dissipation — 358 mW active High-speed operation — 80-ns access, 130-ns cycle times High-speed Nibble Mode - 15-ns access, 35-ns cycle times
|
OCR Scan
|
Am90C255
80-ns
130-ns
15-ns
35-ns
90C255
WF009742
WF009752
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Am90C255 256K x 1 CMOS Nibble Mode Dynamic RAM PRELIMINARY SSZ006WV DISTINCTIVE CHARACTERISTICS • • • High density 256K x 1 Low-power dissipation — 358 mW active High-speed operation — 80-ns access, 130-ns cycle times • High-speed Nibble Mode - 15-ns access, 35-ns cycle times
|
OCR Scan
|
Am90C255
SSZ006WV
80-ns
130-ns
15-ns
35-ns
WF009712
WF009742
|
PDF
|
D 304 x
Abstract: No abstract text available
Text: SMLS240B-NQVEMBER 1990-REVISED JANUARY 1993 TMS27C240 J PACKAGEt TOP VIEW Max Access/Mln Cycle Time VCC * 10% 100 ns 120 ns 150 ns 16-Blt Output For Use in Microprocessor-Based Systems Very High Speed SNAPI Pulse Programming Power-Saving CMOS Technology
|
OCR Scan
|
TMS27C240
304-BIT
TMS27PC240
27C/PC240-10
27C/PC240-12
27C/PC240-15
16-Blt
400-mV
D 304 x
|
PDF
|
Untitled
Abstract: No abstract text available
Text: March 1994 DATA SHEET_ M 67024 4 K X 16 CMOS DUAL PORT RAM FEATURES . FAST ACCESS TIME: 35 NS TO 55 NS 30 NS PRELIMINARY FOR COMMERCIAL ONLY . WIDE TEMPERATURE RANGE: -5 5 ° C T O + 125°C . 67024 L LOW POWER 67024 V VERY LOW POWER
|
OCR Scan
|
67024/Rev
|
PDF
|
C22V10
Abstract: 22V10L-25PC 22V10L C22V10B 22v10b15 22v10b-20dmb 22V10B 22V10-30WMB 22V10-25HMB 22V10-25WMB
Text: PAL C 22V10B/PAL C 22V10 CYPRESS SEMICONDUCTOR Reprogrammable CMOS PAL Device Features Functional Description — “20” military 15 ns t c o 17 ns ts 20 ns tpD 31 M H z • Advanced second generation PAL architecture • Low power — 55 mA max “ L”
|
OCR Scan
|
22V10B/PAL
22V10
prog22
38-00020-D
C22V10
22V10L-25PC
22V10L
C22V10B
22v10b15
22v10b-20dmb
22V10B
22V10-30WMB
22V10-25HMB
22V10-25WMB
|
PDF
|
lt228
Abstract: b433 resonator CD 4017 PIN DIAGRAM SDL 4007 TT 2146 4043-C DB3C 828 F3L3 AB14C wy 413
Text: Preliminary Data Sheet i uy ü AT&T Microelectronics DSP1604/06 Digital Signal Processor •I 1 Features 2 Description ■ For 5 V operation: — 25 ns instruction cycle time 40 MIPS — 30 ns instruction cycle time (33 MIPS) ■ For 3.3 V operation: — 31.25 ns instruction cycle time (32 MIPS)
|
OCR Scan
|
DSP1604/06
DSP1606,
DSP1604
16-bit
36-bit
005002b
001bS34
lt228
b433 resonator
CD 4017 PIN DIAGRAM
SDL 4007
TT 2146
4043-C
DB3C 828
F3L3
AB14C
wy 413
|
PDF
|
ICE ICC3
Abstract: No abstract text available
Text: DRAM MODULES KMM584100N 4 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • Í rac tcAc tnc KMM584100N-6 60ns 15ns 1 1 0 ns KMM584100N-7 70ns 20 ns 130ns KMM584100N-8 80ns 20 ns 150ns Fast Page Mode operation
|
OCR Scan
|
KMM584100N
KMM584100N-6
KMM584100N-7
KMM584100N-8
KMM584100N
KM44C41000J
24-pin
30-pin
ICE ICC3
|
PDF
|
S2MH
Abstract: No abstract text available
Text: IHM M 67024 DATA SHEET 4 K x 16 CMOS DUAL PORT RAM FEATURES . FAST ACCESS TIME: 35 NS TO 55 NS 30 NS PRELIMINARY FOR COMMERCIAL ONLY WIDE TEMPERATURE RANGE: - 55 °C TO + 125 °C 67024 L LOW POWER 67024 V VERY LOW POWER SEPARATE UPPER BYTE AND LOWER BYTE CONTROL
|
OCR Scan
|
67024/Rev
S2MH
|
PDF
|
Untitled
Abstract: No abstract text available
Text: b4E D L O O lO 1 LOGIC B DEVICES INC • □ 8K x 8 CMOS Static RAM with 8-bit Tag Comparison Logic □ High Speed Address-to-MATCH — 12 ns maximum □ High Speed Flash Clear □ High Speed Read Access Time — 12 ns maximum □ Low Power Operation Active: 320 mW typical at 35 ns
|
OCR Scan
|
MIL-STD-883,
IDT7174,
IDT71B74,
MK48H74
28-pin
32-pin
L7C174
L7C174
|
PDF
|
ECK-DNS222ME
Abstract: No abstract text available
Text: Ceramic Disc Capacitors For Safety Regulations Class II ECK-DNS Series Features • Ceramic Disc Capacitors, Type NS, are recognized by UL, CSA, BSI, SEMKO, SEV and VDE • The NS (Suffix: X) capacitors are applicable to “Class II” equipment in European safety regulations
|
OCR Scan
|
22000pF
ECK-DNS222ME
|
PDF
|
