Untitled
Abstract: No abstract text available
Text: Insulated Gate Bipolar Transistors Page 1 of 1 Home Package Device Type BVCES Volts IC CONT Amp VCE(sat) Volts tf* ns (typical) CIES q JC pF (typical) ° C/W (typical) TO-254 NSG20640 600@90° C 31 2.0 800 1500 1.25 TO-254 NSG20648A 600@90° C 24 2.9 100
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Original
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O-254
O-257
O-258
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PDF
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NSG2561
Abstract: No abstract text available
Text: ^1 P *NEW ENGLAND SEMICONDUCTOR LOW DROPOUT VOLTAGE REGULATORS IV Dropout, 1.5V @ Max C urrent 0.01% Load Regulation 0.015% Line Regulation 1% Reference Voltage H ermetic TO-254Z Pak O utput C u rren t 1.5A 3 TERM IN AL PO SITIV E ADJUSTABLE Pinout Adjust
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OCR Scan
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O-254Z
NSG2561.
125UC,
NSG2561
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PDF
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Untitled
Abstract: No abstract text available
Text: LOW DROPOUT VOLTAGE REGULATORS IV Dropout, 1.5V @ Max C urrent 0.01% Load Regulation 0.015% Line Regulation 1% Reference Voltage H ermetic TO-254Z Pak O utput C u rren t 1.5A 3 TERM IN AL PO SITIV E ADJUSTABLE Pinout Adjust Pin 1 Pin 2 Vout Pin 3 Vin ABSOLUTE MAXIMUM RATINGS
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OCR Scan
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O-254Z
urrent-NSG2561.
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PDF
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NES1086
Abstract: NSG2561
Text: NES1086 ^1 P *NEW ENGLAND SEMICONDUCTOR LOW DROPOUT VOLTAGE REGULATORS IV Dropout, 1.5V @ Max C urrent 0.01% Load Regulation 0.015% Line Regulation 1% Reference Voltage H ermetic TO-254Z Pak O utput C u rren t 1.5A 3 TERM IN AL PO SITIV E ADJUSTABLE Pinout
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OCR Scan
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NES1086
O-254Z
NES1086.
125UC,
NES1086
NSG2561
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PDF
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