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    Nanya Technology Corporation NT5CB128M8DN-DH

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    Bristol Electronics NT5CB128M8DN-DH 1,918
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    Nanya Technology Corporation NT5CB128M8FN-DH

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    Bristol Electronics NT5CB128M8FN-DH 579
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    Nanya Technology Corporation NT5CB128M8FN-DII

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    Bristol Electronics NT5CB128M8FN-DII 530
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    NT5CB128M8 Datasheets Context Search

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    NT5CB64M16AP-CF

    Abstract: nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC
    Text: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  Write Leveling  1.5V ± 0.075V JEDEC Standard Power Supply  OCD Calibration  8 Internal memory banks (BA0- BA2)  Dynamic ODT (Rtt_Nom & Rtt_WR)  Differential clock input (CK, )


    Original     		PDF NT5CB256M4AN NT5CB128M8AN NT5CB64M16AP 60-Ball 84-Ball NT5CB64M16AP-CF nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC

    NT5CB128M8CN

    Abstract: NT5CB256M4CN NT5CB128
    Text: 1Gb DDR3 SDRAM C-Die NT5CB256M4CN / NT5CB128M8CN Feature  1.5V ± 0.075V JEDEC Standard Power Supply  Write Leveling  8 Internal memory banks (BA0- BA2)  OCD Calibration  Differential clock input (CK, )  Dynamic ODT (Rtt_Nom & Rtt_WR)


    Original     		PDF NT5CB256M4CN NT5CB128M8CN 78-Ball Rate32 NT5CB128M8CN NT5CB128

    NT5CB64M16DP

    Abstract: nt5cb64m16 DDR3-2133-CL13 DDR3 pin out NT5CB64M16D NT5CB64m
    Text: NT5CB128M8DN/NT5CB64M16DP NT5CC128M8DN/NT5CC64M16DP 1Gb DDR3 D-die SDRAM Feature Table 1: CAS Latency Frequency Speed Bins Parameter -BE* -CF/CFI* -DH/DHI* -EI* -FK* DDR3/L-1066-CL7 (DDR3/L-1333-CL8) (DDR3/L-1600-CL10) (DDR3-1866-CL11) (DDR3-2133-CL13) Units


    Original     		PDF NT5CB128M8DN/NT5CB64M16DP NT5CC128M8DN/NT5CC64M16DP DDR3/L-1066-CL7) DDR3/L-1333-CL8) DDR3/L-1600-CL10) DDR3-1866-CL11) NT5CB64M16DP nt5cb64m16 DDR3-2133-CL13 DDR3 pin out NT5CB64M16D NT5CB64m

    Untitled

    Abstract: No abstract text available
    Text: NT5CB128M8DN/NT5CB64M16DP 1Gb DDR3 SDRAM D-Die Preliminary Feature Table 1: CAS Latency Frequency Speed Bins -BE* -CF* -DH* -EI* DDR3-1066-CL7 (DDR3-1333-CL8) (DDR3-1600-CL10) (DDR3-1866-CL11) Units Parameter Min. Max. Min. Max. Min. Max. Min. Max.


    Original     		PDF NT5CB128M8DN/NT5CB64M16DPÂ DDR3-1066-CL7) DDR3-1333-CL8) DDR3-1600-CL10) DDR3-1866-CL11)

    2310 dhi

    Abstract: NT5CB64M16DP nt5cb64m16 NT5CB128 DDR3 pin out NT5CB64M16D NT5CB128M8DN-CF NT5CB64M16dpcf CL-14
    Text: 1Gb DDR3 SDRAM NT5CB128M8DN / NT5CB64M16DP NT5CC128M8DN / NT5CC64M16DP Feature Table 1: CAS Latency Frequency Speed Bins Parameter -BE* -CF/CFI* -DH/DHI* -EJ* -FK* DDR3/L-1066 DDR3/L-1333 DDR3/L-1600 DDR3-1866 DDR3-2133 CL7 CL8 CL10 CL12 CL13 Units Min. Max.


    Original     		PDF NT5CB128M8DN NT5CB64M16DP NT5CC128M8DN NT5CC64M16DP DDR3/L-1066 1600Mbps. 1600Mbps DDR3-1866 DDR3-1866 2310 dhi nt5cb64m16 NT5CB128 DDR3 pin out NT5CB64M16D NT5CB128M8DN-CF NT5CB64M16dpcf CL-14

    NT5CB64M16AP-BE

    Abstract: No abstract text available
    Text: NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP 1Gb DDR3 SDRAM A-Die Features • VDD=VDDQ=1.5V ± 0.075V JEDEC Standard Power Supply • Write Leveling • OCD Calibration • 8 internal banks (BA0 - BA2) • Dynamic ODT (Rtt_Nom & Rtt_WR) • Differential clock inputs (CK, CK)


    Original     		PDF NT5CB256M4AN NT5CB128M8AN NT5CB64M16AP NT5CB64M16AP-BE

    NT5CB256

    Abstract: srt 8n JESD79-3 NT5CB128M8CN NT5CB128M8CN-CG NT5CB128M TI ddr3 controller datasheet NT5CB128
    Text: 1Gb DDR3 SDRAM C-Die NT5CB256M4CN / NT5CB128M8CN Feature  1.5V ± 0.075V JEDEC Standard Power Supply  Write Leveling  8 Internal memory banks (BA0- BA2)  OCD Calibration  Differential clock input (CK, )  Dynamic ODT (Rtt_Nom & Rtt_WR)


    Original     		PDF NT5CB256M4CN NT5CB128M8CN 78-Ball NT5CB256 srt 8n JESD79-3 NT5CB128M8CN NT5CB128M8CN-CG NT5CB128M TI ddr3 controller datasheet NT5CB128

    nt5cb64m16

    Abstract: NT5CB64m NT5CB64M16AP NT5CB64 NT5CB64M16AP-CF NT5CB64M16AP-BE nanya NT5CB64M16AP NT5CB256M4AN NT5CB64M16AP-CG NT5CB64M16AP-AC
    Text: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  Write Leveling  1.5V ± 0.075V JEDEC Standard Power Supply  OCD Calibration  8 Internal memory banks (BA0- BA2)  Dynamic ODT (Rtt_Nom & Rtt_WR)  Differential clock input (CK, )


    Original     		PDF NT5CB256M4AN NT5CB128M8AN NT5CB64M16AP 78-Ball 96-Ball nt5cb64m16 NT5CB64m NT5CB64M16AP NT5CB64 NT5CB64M16AP-CF NT5CB64M16AP-BE nanya NT5CB64M16AP NT5CB64M16AP-CG NT5CB64M16AP-AC

    NT5CB128

    Abstract: NT5CB128M NT5CB256 NT5CB128M8CN-CG NT5CB256m NT5CB128M8 NT5CB128M8CN srt 8n JESD79-3 Nanya DDR3
    Text: 1Gb DDR3 SDRAM C-Die NT5CB256M4CN / NT5CB128M8CN Feature  1.5V ± 0.075V JEDEC Standard Power Supply  Write Leveling  8 Internal memory banks (BA0- BA2)  OCD Calibration  Differential clock input (CK, )  Dynamic ODT (Rtt_Nom & Rtt_WR)


    Original     		PDF NT5CB256M4CN NT5CB128M8CN 78-Ball NT5CB128 NT5CB128M NT5CB256 NT5CB128M8CN-CG NT5CB256m NT5CB128M8 NT5CB128M8CN srt 8n JESD79-3 Nanya DDR3

    NT5CB64M16DP

    Abstract: nt5cb64m16 NT5CB64M16DP-DH NT5CB128M8DN-CFI NT5CC64M16DP NT5C NT5CC128M8DN DDR3 pin out NT5CB64M16D NT5CB64
    Text: NT5CB128M8DN/NT5CB64M16DP NT5CC128M8DN/NT5CC64M16DP 1Gb DDR3 D-die SDRAM Feature Table 1: CAS Latency Frequency Speed Bins Parameter -BE* -CF/CFI* -DH/DHI* -EJ* -FK* DDR3/L-1066 DDR3/L-1333 DDR3/L-1600 DDR3-1866 DDR3-2133 CL7 CL8


    Original     		PDF NT5CB128M8DN/NT5CB64M16DP NT5CC128M8DN/NT5CC64M16DP DDR3/L-1066 NT5CB64M16DP nt5cb64m16 NT5CB64M16DP-DH NT5CB128M8DN-CFI NT5CC64M16DP NT5C NT5CC128M8DN DDR3 pin out NT5CB64M16D NT5CB64

    nt5cb64m16

    Abstract: NT5CB64M16AP-CF NT5CB64M16AP-AC NT5CB64M16AP NT5CB64M16AP-BE nt5cb128m8an-cg NT5CB128M8AN-DG
    Text: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  Write Leveling  1.5V ± 0.75V JEDEC Standard Power Supply  OCD Calibration  8 Internal memory banks (BA0- BA2)  Dynamic ODT (Rtt_Nom & Rtt_WR)  Differential clock input (CK, )


    Original     		PDF NT5CB256M4AN NT5CB128M8AN NT5CB64M16AP 60-Ball 84-Ball Rate32 nt5cb64m16 NT5CB64M16AP-CF NT5CB64M16AP-AC NT5CB64M16AP NT5CB64M16AP-BE nt5cb128m8an-cg NT5CB128M8AN-DG

    NT5CB256M4AN-BE

    Abstract: No abstract text available
    Text: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  Write Leveling  1.5V ± 0.75V JEDEC Standard Power Supply  OCD Calibration  8 Internal memory banks (BA0- BA2)  Dynamic ODT (Rtt_Nom & Rtt_WR)  Differential clock input (CK, )


    Original     		PDF NT5CB256M4AN NT5CB128M8AN NT5CB64M16AP NT5CB256M4AN-BE

    NT5CB64M16FP-DH

    Abstract: NT5CB64M16FP nt5cb64m16 NT5CB128M8FN-DH NT5CC64M16FP NT5CB128M8FN NT5CB64M1
    Text: 1Gb DDR3 F-die SDRAM NT5CB128M8FN/NT5CB64M16FP NT5CC128M8FN/NT5CC64M16FP Preliminary Feature Table 1: CAS Latency Frequency Speed Bins -DH/DHI* -EJ* -FK* DDR3/L-1600 DDR3-1866 DDR3-2133 CL10 CL12 CL13 Units Parameter Min. Max. Min. Max. Min. Max. tCK Avg.


    Original     		PDF NT5CB128M8FN/NT5CB64M16FP NT5CC128M8FN/NT5CC64M16FP DDR3/L-1600 DDR3-1866 DDR3-2133 NT5CB64M16FP-DH NT5CB64M16FP nt5cb64m16 NT5CB128M8FN-DH NT5CC64M16FP NT5CB128M8FN NT5CB64M1

    nt5cb64m16

    Abstract: NT5CB64M16AP-CF NT5CB64M16AP-AC NT5CB256M4AN NT5CB64M16AP srt 8n NT5CB64M16AP-CG nt5cb64m16ap-dh NT5CB128M8 NT5CB256M4AN-CG
    Text: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  Write Leveling  1.5V ± 0.75V JEDEC Standard Power Supply  OCD Calibration  8 Internal memory banks (BA0- BA2)  Dynamic ODT (Rtt_Nom & Rtt_WR)  Differential clock input (CK, )


    Original     		PDF NT5CB256M4AN NT5CB128M8AN NT5CB64M16AP 60-Ball 84-Ball nt5cb64m16 NT5CB64M16AP-CF NT5CB64M16AP-AC NT5CB64M16AP srt 8n NT5CB64M16AP-CG nt5cb64m16ap-dh NT5CB128M8 NT5CB256M4AN-CG

    Untitled

    Abstract: No abstract text available
    Text: 1Gb DDR3 F-die SDRAM NT5CB128M8FN / NT5CB64M16FP NT5CC128M8FN / NT5CC64M16FP Feature   Differential bidirectional data strobe  Write Leveling  OCD Calibration Backward compatible to VDD= VDDQ= 1.5V  Dynamic ODT Rtt_Nom & Rtt_WR ±0.075V 


    Original     		PDF NT5CB128M8FN NT5CB64M16FP NT5CC128M8FN NT5CC64M16FP x8/x16

    NT5CB64m

    Abstract: nt5cb64m16 NT5CB64 NT5CB128M8AN NT5CB128 NT5CB256m
    Text: NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP 1Gb DDR3 SDRAM A-Die Preliminary Edition Features • VDD=VDDQ=1.5V ± 0.075V JEDEC Standard Power Supply • Write Leveling • OCD Calibration • 8 internal banks (BA0 - BA2) • Dynamic ODT (Rtt_Nom & Rtt_WR)


    Original     		PDF NT5CB256M4AN NT5CB128M8AN NT5CB64M16AP NT5CB64m nt5cb64m16 NT5CB64 NT5CB128 NT5CB256m

    NT5CB128M8FN

    Abstract: NT5CB64M16FP-EK NT5CB64M16FP-DH NT5CB64M16FP
    Text: 1Gb DDR3 F-die SDRAM NT5CB128M8FN / NT5CB64M16FP NT5CC128M8FN / NT5CC64M16FP Feature   8n-bit prefetch architecture  Output Driver Impedance Control  Differential bidirectional data strobe Backward compatible to VDD= VDDQ= 1.5V  Write Leveling


    Original     		PDF NT5CB128M8FN NT5CB64M16FP NT5CC128M8FN NT5CC64M16FP x8/x16 NT5CB64M16FP-EK NT5CB64M16FP-DH NT5CB64M16FP

    NT5CB64M16FP

    Abstract: NT5CB64M16FP-DII NT5CB64M16FP-EK nt5cb64m16 NT5CC64M16FP NT5CC64M16FP-DI NT5CB64M16FP-DH NT5CB128M8FN NT5CC128M8FN NT5CC128M8FN-DI
    Text: 1Gb DDR3 F-die SDRAM NT5CB128M8FN / NT5CB64M16FP NT5CC128M8FN / NT5CC64M16FP Feature   8n-bit prefetch architecture  Output Driver Impedance Control  Differential bidirectional data strobe Backward compatible to VDD= VDDQ= 1.5V  Write Leveling


    Original     		PDF NT5CB128M8FN NT5CB64M16FP NT5CC128M8FN NT5CC64M16FP x8/x16 NT5CB64M16FP-DII NT5CB64M16FP-EK nt5cb64m16 NT5CC64M16FP NT5CC64M16FP-DI NT5CB64M16FP-DH NT5CC128M8FN-DI

    nt5cb64m16

    Abstract: MPR 20 20 CF RESISTOR NT5CB64M16DP-DH NT5CB64 DDR3 1600 spd NT5CB64M16D NT5CB64M16dpcf
    Text: NT5CB128M8DN/NT5CB64M16DP 1Gb DDR3 SDRAM D-Die Preliminary Feature Table 1: CAS Latency Frequency Speed Bins -BE* -CF* -DH* -EI* DDR3-1066-CL7 (DDR3-1333-CL8) (DDR3-1600-CL10) (DDR3-1866-CL11) Units Parameter Min. Max. Min. Max. Min. Max. Min. Max. tCK(Avg.)


    Original     		PDF NT5CB128M8DN/NT5CB64M16DP DDR3-1066-CL7) DDR3-1333-CL8) DDR3-1600-CL10) DDR3-1866-CL11) nt5cb64m16 MPR 20 20 CF RESISTOR NT5CB64M16DP-DH NT5CB64 DDR3 1600 spd NT5CB64M16D NT5CB64M16dpcf

    nt5cc64m

    Abstract: No abstract text available
    Text: 1Gb DDR3 SDRAM F-Die NT5CB C 128M8FN / NT5CB(C)64M16FP Options Features  Differential clock input (CK, ) Speeds  Differential bidirectional data strobe  DDR3 - 1866  TDQS and /TDQS pair for X8  DDR3/DDR3L/DDR3L RS - 1600  8n-bit prefetch architecture


    Original     		PDF 128M8FN 64M16FP P123-136 P91-122 P137-143 P146-156 nt5cc64m

    Untitled

    Abstract: No abstract text available
    Text: 1Gb DDR3 SDRAM F-Die NT5CB C 128M8FN / NT5CB(C)64M16FP Options Features  Differential clock input (CK, ) Speeds  Differential bidirectional data strobe  DDR3 - 1866  TDQS and /TDQS pair for X8  DDR3/DDR3L/DDR3L RS - 1600 2,3 2,4  8n-bit prefetch architecture


    Original     		PDF 128M8FN 64M16FP P122-134 P144-154 P135-141

    Untitled

    Abstract: No abstract text available
    Text: 1Gb DDR3 SDRAM F-Die NT5CB C 128M8FN / NT5CB(C)64M16FP Options Features  Differential clock input (CK, ) Speeds  Differential bidirectional data strobe  DDR3 - 1866  TDQS and /TDQS pair for X8  DDR3/DDR3L/DDR3L RS - 1600 2,3 2,4  8n-bit prefetch architecture


    Original     		PDF 128M8FN 64M16FP P135-141 P145-148,

    Untitled

    Abstract: No abstract text available
    Text: Nanya Technology Corp. DDR3 L 1Gb SDRAM NT5CB(C)128M8FN / NT5CB(C)64M16FP NT5CB(C)128M8FN / NT5CB(C)64M16FP Commercial, Industrial and Automotive DDR3(L) 1Gb SDRAM Features  Signal Integrity  JEDEC DDR3 Compliant - Configurable DS for system compatibility


    Original     		PDF 128M8FN 64M16FP IDDQ2NT-X8X16

    NT5CB256M8

    Abstract: nt5cb128m16 NT5CB256 NT5CB256M8BN-CG NT5CB256M8BN-BE NT5CB256M4CN NT5CB512M4BN NT5CB128M
    Text: 2Gb DDR3 SDRAM B-Die NT5CB512M4BN / NT5CB256M8BN / NT5CB128M16BP Feature  1.5V ± 0.075V JEDEC Standard Power Supply  Write Leveling  8 Internal memory banks (BA0- BA2)  OCD Calibration  Differential clock input (CK, )  Dynamic ODT (Rtt_Nom & Rtt_WR)


    Original     		PDF NT5CB512M4BN NT5CB256M8BN NT5CB128M16BP 78-Ball 96-Ball Rate32 483tomer NT5CB256M8 nt5cb128m16 NT5CB256 NT5CB256M8BN-CG NT5CB256M8BN-BE NT5CB256M4CN NT5CB128M