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NTE Electronics Inc NTE210 Bipolar Transistor, Npn, 75V; Transistor Polarity:Npn; Collector Emitter Voltage Max:75V; Continuous Collector Current:1A; Power Dissipation:1.67W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:375Mhz Rohs Compliant: Yes \|Nte Electronics NTE210
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Newark	NTE210	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
NTE Electronics Inc NTE211 Transistor,bjt,pnp,75V V(Br)Ceo,1A I(C),to-202 Rohs Compliant: Yes \|Nte Electronics NTE211
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Newark	NTE211	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
NTE Electronics Inc NTE213 Transistor,bjt,pnp,65V V(Br)Ceo,30A I(C),to-36 \|Nte Electronics NTE213
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Newark	NTE213	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Onlinecomponents.com	NTE213		7			1 $58.16 10 $46.64 100 $41.04 1000 $39.99 10000 $39.99	Buy Now
Quest Components	NTE213		6			1 $39 10 $39 100 $39 1000 $39 10000 $39	Buy Now
TME	NTE213		5		1	1 $63 10 $50.1 100 $50.1 1000 $50.1 10000 $50.1	Buy Now
NTE Electronics Inc NTE218 Audio Power Transistor, Pnp, -80V, To-66; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:4A; Power Dissipation:25W; Transistor Mounting:Through Hole; No. Of Pins:2Pins; Product Range:-; Msl:-Rohs Compliant: Yes \|Nte Electronics NTE218
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Newark	NTE218	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	NTE218		1			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	NTE218		2			1 $10.3275 10 $6.885 100 $6.885 1000 $6.885 10000 $6.885	Buy Now
TME	NTE218		2		1	1 $6.43 10 $5.11 100 $4.59 1000 $4.59 10000 $4.59	Buy Now
NTE Electronics Inc NTE219 Transistor PNP Siicon 100V IC=15A TO-3 Case General Purpos AMP And Switch Complement To NTE130
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	NTE219		415			1 - 10 $3.93 100 $3.44 1000 $2.77 10000 $2.56	Buy Now
Quest Components	NTE219		4			1 $7.2 10 $4.8 100 $4.8 1000 $4.8 10000 $4.8	Buy Now

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NTE21 Datasheets (33)

Part	Manufacturer	Description	Datasheet Type	PDF
NTE21	NTE Electronics	PNP Silicon Complementary Transistor High Power, Low Collector Saturation Voltage Power Output	Original	PDF
NTE210	NTE Electronics	Silicon Complementary Transistor General Purpose Output & Driver	Original	PDF
NTE210	NTE Electronics	Transistors - Bi-Polar	Scan	PDF
NTE2101	NTE Electronics	Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns	Original	PDF
NTE2102	NTE Electronics	Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns	Original	PDF
NTE2104	NTE Electronics	MICROPROCESSOR & MEMORY CIRCUITS	Scan	PDF
NTE2107	NTE Electronics	MICROPROCESSOR & MEMORY CIRCUITS	Scan	PDF
NTE211	NTE Electronics	Silicon Complementary Transistor General Purpose Output & Driver	Original	PDF
NTE211	NTE Electronics	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor PNP, Si, General Purpose Output & Driver, Pkg Style TO202	Scan	PDF
NTE211	NTE Electronics	Transistors - Bi-Polar	Scan	PDF
NTE21128	NTE Electronics	Integrated Circuit NMOS, 128K (16K x 8) UV EPROM	Original	PDF
NTE21128	NTE Electronics	Microprocessor and Memory IC Pinouts	Scan	PDF
NTE2114	NTE Electronics	Integrated Circuit MOS, Static 4K RAM, 300ns	Original	PDF
NTE2117	NTE Electronics	MICROPROCESSOR & MEMORY CIRCUITS	Scan	PDF

NTE21256	NTE Electronics	262,144-Bit Dynamic Random Access Memory (DRAM)	Original	PDF
NTE21256	NTE Electronics	Microprocessor and Memory IC Pinouts	Scan	PDF
NTE2128	NTE Electronics	MICROPROCESSOR & MEMORY CIRCUITS	Scan	PDF
NTE213	NTE Electronics	Germanium PNP Transistor High Power, High Gain Amplifier	Original	PDF
NTE213	NTE Electronics	Transistors - Bi-Polar	Scan	PDF
NTE214	NTE Electronics	Silicon NPN Transistor Darlington Driver	Original	PDF

NTE21 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NTE2107 Abstract: No abstract text available Text: NTE2107 Integrated Circuit NMOS, 4K Dynamic RAM DRAM Description: The NTE2107 is a 4096 word by 1 bit dynamic random access memory (RAM) that incorporates the latest memory design features and can be used in a wide variety of applications, from those which	Original	PDF	NTE2107 NTE2107
NTE20 Abstract: NTE21 Text: NTE20 NPN & NTE21 (PNP) Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Output Features: D High Power in a Compact ATR Package: PO = 1W Applications: D Regulated Power Supplies D 1 to 2W Output Stages D Drivers Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)	Original	PDF	NTE20 NTE21 500mA 200mA NTE20 NTE21
Silicon NPN Darlington transistor Abstract: No abstract text available Text: NTE214 Silicon NPN Transistor Darlington Driver Description: The NTE214 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.	Original	PDF	NTE214 NTE214 500IB1 500IB2 Silicon NPN Darlington transistor
NTE218 Abstract: vce 1v Text: NTE218 Silicon PNP Transistor Audio Power Output Description: The NTE218 is ideal for use as a driver, switch and medium–power amplifier applications. This device features: Features: D Low Saturation Voltage – 0.6VCE sat @ IC = 1A D High Gain Characteristics – hFE @ IC = 250mA: 30–100	Original	PDF	NTE218 NTE218 250mA: 250mA 250mA, 100kHz vce 1v
NTE21128 Abstract: No abstract text available Text: NTE21128 Integrated Circuit NMOS, 128K 16K x 8 UV EPROM Description: The NTE21128 is a 131,072 bit UV erasable and electrically programmable memory EPROM in a 28–Lead DIP type package organized as 16,384 words by 8 bits. The transparent lid allows the user	Original	PDF	NTE21128 NTE21128 250ns
NTE20 Abstract: NTE21 Text: NTE20 NPN & NTE21 (PNP) Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Output Features: D High Power in a Compact ATR Package: PO = 1W Applications: D Regulated Power Supplies D 1 to 2W Output Stages D Drivers Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)	Original	PDF	NTE20 NTE21 500mA 200mA NTE20 NTE21
germanium transistor pnp Abstract: nte213 Text: NTE213 Germanium PNP Transistor High Power, High Gain Amplifier Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment. Absolute Maximum Ratings:	Original	PDF	NTE213 NTE213 500mA germanium transistor pnp
NTE2128 Abstract: No abstract text available Text: NTE2128 Integrated Circuit 16K 2048 x 8−Bit StaticRandom Access Memory (RAM) Description: The NTE2128 is a 16,384−bit Random−Access Memory (RAM) device in a 24−Lead DIP type package organized as 2048 words by 8 bits. Using a scaled NMOS technology, its design provides the	Original	PDF	NTE2128 NTE2128 384-bit 24-Lead 200mV
Untitled Abstract: No abstract text available Text: NTE218 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)90 I(C) Max. (A)3 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)	Original	PDF	NTE218
NTE2117 Abstract: No abstract text available Text: NTE2117 Integrated Circuit 16K Dynamic Random Access Memory RAM Description: The NTE2117 is a new generation MOS dynamic random access memory circuit in a 16−Lead DIP type package organized as 16,384 x 1−bit and incorporates advanced circuit techniques designed	Original	PDF	NTE2117 NTE2117 16-Lead Note18. Note19.
NTE130 Abstract: NTE130MP NTE219 NTE219MCP Text: NTE130 NPN & NTE219 (PNP) Silicon Power Transistor Audio Power Amp, Medium Speed Switch Description: The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case designed for general purpose switching and amplifier applications.	Original	PDF	NTE130 NTE219 NTE130MP NTE130 NTE219MCP NTE219
NTE211 Abstract: NTE210 Text: NTE210 NPN & NTE211 (PNP) Silicon Complementary Transistors General Purpose Output & Driver Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type package designed for general purpose, medium voltage, medium power amplifier and driver applications	Original	PDF	NTE210 NTE211 500mA, 20MHz NTE211 NTE210
NTE2102 Abstract: NTE210 Text: NTE2102 Integrated Circuit NMOS, 1K Static RAM SRAM , 350ns Description: The NTE2101 is a high–speed 1024 x 1 bit static random access read/write memory in a 16–Lead DIP type package designed using N–Channel depletion mode silicon gate technology. Static storage	Original	PDF	NTE2102 350ns NTE2101 NTE2102 NTE210
DC 5V to DC 100V CIRCUIT DIAGRAM Abstract: 110v to 5v dc schematic transistor Ic 4A datasheet NPN 547 relay ic nte215 Text: NTE215 Silicon NPN Transistor Darlington Driver Description: The NTE215 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.	Original	PDF	NTE215 NTE215 500IB1 500IB2 DC 5V to DC 100V CIRCUIT DIAGRAM 110v to 5v dc schematic transistor Ic 4A datasheet NPN 547 relay ic

NTE2114 Abstract: No abstract text available Text: NTE2114 Integrated Circuit MOS, Static 4K RAM, 300ns Description: The NTE2114 1024–word 4–bit static random access memory is fabricated using N–channel silicon– gate technology. All internal circuits are fully static and therefore require no clocks or refreshing for	Original	PDF	NTE2114 300ns NTE2114 225mW 300ns
NTE216 Abstract: driver transistor hfe 60 vce 1v Text: NTE216 Silicon NPN Transistor High Speed Switch, Core Driver Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V	Original	PDF	NTE216 150mA, 300mA, 500mA, 800mA, NTE216 driver transistor hfe 60 vce 1v
NTE2147 Abstract: No abstract text available Text: NTE2147 Integrated Circuit 4K Static Random Access Memory SRAM Description: The NTE2147 is a 4096−bit static Random Access Memory (SRAM) in an 18−Lead DIP type package organized as 4096 words by 1−bit. Using a scaled NMOS technology, it incorporates an innovative	Original	PDF	NTE2147 NTE2147 4096-bit 18-Lead 200mV -200mV Note10. Note12.
NTE2164 Abstract: No abstract text available Text: NTE2164 Integrated Circuit 65,536 X 1 Bit Dynamic Random Access Memory Description: The NTE2164 is 65, 536 words by 1 bit Dynamic N−Channel MOS RAM designed to operate from a single +5V power supply. The negative−voltage substrate bias is internally generated−its operation	Original	PDF	NTE2164 NTE2164 Note12 Note13
NTE2104 Abstract: No abstract text available Text: NTE2104 Integrated Circuit 4096 X 1 − Bit DYNAMIC RAM Description: The NTE2104 is a 4096 word by 1 bit MOS random access memory circuit fabricated with an N − Channel Silicon Gate Process. The NTE2104 employs a single transistor storage cell utilizing a dynamic control circuitry to achieve optimum performance with low power dissipation.	Original	PDF	NTE2104 NTE2104
vce 1v Abstract: NTE216 Text: NTE216 Silicon NPN Transistor High Speed Switch, Core Driver Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V	Original	PDF	NTE216 150mA, 300mA, 500mA, 800mA, vce 1v NTE216
NTE20 Abstract: NTE21 Text: NTE20 NPN & NTE21 (PNP) Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Output Features: D High Power in a Compact ATR Package: PO = 1W Applications: D Regulated Power Supplies D 1 to 2W Output Stages D Drivers Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)	Original	PDF	NTE20 NTE21 500mA 200mA NTE20 NTE21
Untitled Abstract: No abstract text available Text: t* MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE8255 40-Lead DI P, See Diag. 299 NMOS, Programmable Preipheral Interface PA3 I PA2 f PA1 § PAO 1 RO\| C 5\| 1 I 1 Q PC6 0 PC5 n PC4 Q pco Q pci Q PC2 Q PC3 g PBO Bo GND Al A0 PC7 PB1 r a PB2 NTE21128	OCR Scan	PDF	NTE8255 40-Lead NTE21128 26-Lead 250ns NTE21256 16-Lead 150ns NTE65101 22-Lead
a5 gnd Abstract: NTE4164 NTE2117 NTE2164 BB 298 NTE2102 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128 Text: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8 -B it Multiplying D/A Converter NTE2102 16-Lead DIP, See Diag. 249 NMOS, 1K Static RAM (SRAM), 350ns NTE2104 16-Lead DIP, See Diag. 249 NMOS, 4K Dynamic RAM (DRAM), 200ns	OCR Scan	PDF	NTE2056 16-Lead NTE2102 350ns NTE2104 200ns NTE2107 22-Lead a5 gnd NTE4164 NTE2117 NTE2164 BB 298 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128
NTE65101 Abstract: NTE21128 NTE21256 NTE8255 GJA9 Text: t* MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE8255 40-Lead DI P, See Diag. 299 NMOS, Programmable Preipheral Interface NTE21128 28-Lead DIP, See Diag. 446 NMOS, 128K EPROM, UV, 250ns NTE21256 16-Lead DIP, See Diag. 248 NMOS, 256k Dynamic RAM (DRAM), 150ns	OCR Scan	PDF	NTE8255 40-Lead NTE21128 28-Lead 250ns NTE21256 16-Lead 150ns NTE65101 22-Lead GJA9

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NTE Electronics Inc NTE210

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NTE21 Datasheets (33)

NTE21 Datasheets Context Search

NTE2107

NTE20

Silicon NPN Darlington transistor

NTE218

NTE21128

NTE20

germanium transistor pnp

NTE2128

Untitled

NTE2117

NTE130

NTE211

NTE2102

DC 5V to DC 100V CIRCUIT DIAGRAM

NTE2114

NTE216

NTE2147

NTE2164

NTE2104

vce 1v

NTE20

Untitled

a5 gnd

NTE65101