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    NTE237 Search Results

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    NTE237 Price and Stock

    NTE Electronics Inc NTE2378

    Transistor Rohs Compliant: Yes |Nte Electronics NTE2378
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark NTE2378 Bulk 1
    • 1 -
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    RS NTE2378 Bulk 24 1
    • 1 $7.65
    • 10 $7.65
    • 100 $7.26
    • 1000 $7.26
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    NTE Electronics Inc NTE2373

    P Channel Mosfet, -200V, -11A To-220; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Msl:- Rohs Compliant: Yes |Nte Electronics NTE2373
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark NTE2373 Bulk 1
    • 1 -
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    TME NTE2373 2 1
    • 1 $8.53
    • 10 $6.78
    • 100 $6.09
    • 1000 $6.09
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    NTE Electronics Inc NTE237

    Transistor NPN Silicon 60V IC=3A TO-39 With Heat Sink Po=3.5W 27mhz Final RF Power Output
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com NTE237 2
    • 1 $6.2
    • 10 $5.64
    • 100 $4.38
    • 1000 $3.88
    • 10000 $3.77
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    Bristol Electronics NTE237 1
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    Quest Components NTE237 6
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    NTE237 1
    • 1 $9
    • 10 $9
    • 100 $9
    • 1000 $9
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    NTE Electronics Inc NTE2377

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics NTE2377 49 1
    • 1 $15
    • 10 $10.125
    • 100 $9
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    NTE2377 15
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    Quest Components NTE2377 12
    • 1 $21.735
    • 10 $19.32
    • 100 $19.32
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    NTE2377 2
    • 1 $20
    • 10 $20
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    NTE2377 1
    • 1 $13.455
    • 10 $13.455
    • 100 $13.455
    • 1000 $13.455
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    NTE Electronics Inc NTE2376

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics NTE2376 4 1
    • 1 $9.375
    • 10 $9.375
    • 100 $9.375
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    NTE2376 1
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    Quest Components NTE2376 8
    • 1 $10.845
    • 10 $8.1338
    • 100 $8.1338
    • 1000 $8.1338
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    NTE2376 3
    • 1 $12.5
    • 10 $12.5
    • 100 $12.5
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    NTE2376 1
    • 1 $14.742
    • 10 $14.742
    • 100 $14.742
    • 1000 $14.742
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    TME NTE2376 3 1
    • 1 $11.7
    • 10 $9.3
    • 100 $8.36
    • 1000 $8.36
    • 10000 $8.36
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    Find more NTE237 price and stock on Findchips.com

    NTE237 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE2370 NTE Electronics Silicon Complementary Transistors Digital w/2 Built-In 4.7k Bias Resistors Original PDF
    NTE2371 NTE Electronics MOSFET P-Ch, Enhancement Mode High Speed Switch Original PDF
    NTE2372 NTE Electronics MOSFET P-Ch, Enhancement Mode High Speed Switch Original PDF
    NTE2373 NTE Electronics MOSFET P-Ch, Enhancement Mode High Speed Switch Original PDF
    NTE2374 NTE Electronics MOSFET N-Ch, Enhancement Mode High Speed Switch Original PDF
    NTE2375 NTE Electronics MOSFET N-Ch, Enhancement Mode High Speed Switch Original PDF
    NTE2376 NTE Electronics MOSFET N-Ch, Enhancement Mode High Speed Switch Original PDF
    NTE2377 NTE Electronics MOSFET N-Channel, Enhancement Mode, High Speed Original PDF
    NTE2378 NTE Electronics MOSFET N-Channel Enhancement Mode, High Speed Switch Original PDF
    NTE2379 NTE Electronics MOSFET N-Channel, Enhancement Mode High Speed Switch Original PDF

    NTE237 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE2375 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID


    Original     		NTE2375 PDF

    NTE2372

    Abstract: No abstract text available
    Text: NTE2372 MOSFET P–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Fast Switching D Ease of Paralleling D Simple Drive Requirements D TO220 Case Style Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5A


    Original     		NTE2372 NTE2372 PDF

    NTE2374

    Abstract: No abstract text available
    Text: NTE2374 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A


    Original     		NTE2374 NTE2374 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE237 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)80 I(C) Max. (A)3 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.


    Original     		NTE237 Freq150M StyleTO-39var Code3-12 PDF

    NTE2379

    Abstract: No abstract text available
    Text: NTE2379 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V


    Original     		NTE2379 NTE2379 PDF

    NTE2371

    Abstract: No abstract text available
    Text: NTE2371 MOSFET P–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D P–Channel D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID


    Original     		NTE2371 NTE2371 PDF

    NTE2370

    Abstract: No abstract text available
    Text: NTE2369 NPN & NTE2370 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 4.7k Bias Resistors Features: D Built–In Bias Resistor (R1 = 4.7kΩ, R2 = 4.7kΩ) D Small–Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit


    Original     		NTE2369 NTE2370 200mV, NTE2370 PDF

    NTE2376

    Abstract: No abstract text available
    Text: NTE2376 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID


    Original     		NTE2376 NTE2376 PDF

    DC motor control 120w 30v

    Abstract: DC motor control speed 120w 30v NTE2378 N-Channel MOSFET 200v
    Text: NTE2378 MOSFET N–Channel Enhancement Mode, High Speed Switch Description: The NTE2378 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical


    Original     		NTE2378 NTE2378 DC motor control 120w 30v DC motor control speed 120w 30v N-Channel MOSFET 200v PDF

    nte2377

    Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
    Text: NTE2377 MOSFET N–Channel, Enhancement Mode, High Speed Description: The NTE2377 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical


    Original     		NTE2377 NTE2377 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A PDF

    NTE237

    Abstract: No abstract text available
    Text: NTE237 Silicon NPN Transistor RF Power Output PO = 3.5W, 27MHz Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V


    Original     		NTE237 27MHz) 500mA 500mA, 100mA -200mA 50MHz, NTE237 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE2373 MOSFET P–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11A


    Original     		NTE2373 PDF

    NTE199

    Abstract: NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K
    Text: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page MPX2010GS MPX2050DP MPX2050GP MPX2100A MPX2100AP 15.08 17.27 17.69 17.74 14.57 MOT


    Original     		MPX2010GS MTP75N06HD NTE102A NTE2312 MPX2050DP MTP8N50E NTE103 NTE2315 MPX2050GP MTW10N100E NTE199 NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K PDF

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


    Original     		100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717 PDF

    Untitled

    Abstract: No abstract text available
    Text: BI-POLAR TRANSISTORS Description and Application NTE TVpe Number Polarity and Material 2363 NPN-Si High 2364 PNP-Si High Current Gen Purp Amp/Sw Compì to NTE2363 2365 NPN-Si High Vltg, Horiz Defl Output, Sw, tf = 0.2|is 2367 NPN-Si 2368 Case Style Diag.


    OCR Scan     		NTE2363) NTE2416) OT-23 NTE2419) NTE2418) NTE2364) PDF