NTE276 Search Results

NTE276 Price and Stock

Filter by Manufacturer


NTE Electronics Inc NTE276 Thyristor, gto,1.2Kv V(Drm),to-66 \|Nte Electronics NTE276
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NTE276	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	NTE276		2		1	1 $9 10 $9 100 $9 1000 $9 10000 $9	Buy Now
Quest Components	NTE276		8			1 $12.7935 10 $6.3968 100 $6.3968 1000 $6.3968 10000 $6.3968	Buy Now
	NTE276		1			1 $12 10 $12 100 $12 1000 $12 10000 $12	Buy Now
TME	NTE276		5		1	1 $9.04 10 $7.99 100 $7.99 1000 $7.99 10000 $7.99	Buy Now
NTE Electronics Inc NTE2764 EPROM - 64K - NMOS - 200ns - 28-lead DIP - UV Erasable
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	NTE2764		5			1 $22.85 10 $18.46 100 $16.34 1000 $15.44 10000 $15.44	Buy Now

NTE276 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NTE2764		NTE Electronics	Integrated Circuit NMOS, 64K Erasable EPROM, 200ns		Original	PDF

NTE276 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NTE2764 Abstract: No abstract text available Text: NTE2764 Integrated Circuit NMOS, 64K Erasable EPROM, 200ns Description: The NTE2764 is a 65,536–bit 8192 X 8 bit Ultraviolet Erasable and Electrically Programmable Read–Only Memory (EPROM) in a 28–Lead DIP type package which operates from a single +5V supply, making it ideal for microprocessor applications. It features an output enable control and offers	Original	NTE2764 200ns NTE2764 NTE2764s	PDF
NTE2764 Abstract: No abstract text available Text: NTE2764 Integrated Circuit NMOS, 64K Erasable EPROM, 200ns Description: The NTE2764 is a 65,536–bit 8192 X 8 bit Ultraviolet Erasable and Electrically Programmable Read–Only Memory (EPROM) in a 28–Lead DIP type package which operates from a single +5V supply, making it ideal for microprocessor applications. It features an output enable control and offers	Original	NTE2764 200ns NTE2764 NTE2764s	PDF
Untitled Abstract: No abstract text available Text: NTE276 Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)1.2k V(RRM) Max. (V) I(T) Rated Maximum (A)5.0² @Temp. (øC) (Test Condition) I(TSM) Max. (A)80 @ t(w) (s) (Test Condition) I(GT) Max. (A)120m V(GT) Max.(V)1.5 I(H) Max. (A) Holding Current300mÂ	Original	NTE276 Current300mÃ StyleTO-66 Code3-23	PDF
NTE276 Abstract: SCR Inverter datasheet Text: NTE276 Silicon Controlled Rectifier SCR Gate Controlled Switch Features: D Gate Turn−Off Thyristor D High Speed Power Switching D TV Horizontal Output D Inverter and Converter Application D Supplied in a Japanese TO66 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)	Original	NTE276 250mA NTE276 SCR Inverter datasheet	PDF
NTE199 Abstract: NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K Text: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page MPX2010GS MPX2050DP MPX2050GP MPX2100A MPX2100AP 15.08 17.27 17.69 17.74 14.57 MOT	Original	MPX2010GS MTP75N06HD NTE102A NTE2312 MPX2050DP MTP8N50E NTE103 NTE2315 MPX2050GP MTW10N100E NTE199 NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K	PDF
Untitled Abstract: No abstract text available Text: _ _ N T E ELECTRONICS T n C 17E" NMOS 32K UV EPROM. ZOOnS i . 24-LEAD DIP, SEE DIAG 300 . • ¿43155*1 GOQElflb MOS, 1400-BIT SERIAL EAROM, 2.0nS . . 14-LEAD DIP, SEE DIAG 247 NTE2764 NTE2800 ‘ U u ■ 24 23 22 21 20 19 18 17 16 15 14 13 1 2 3 4 5 6 7	OCR Scan	1400-BIT 14-LEAD NTE2764 NTE2800 NTE2732A 200nS 28-LEAD 24-LEAD 40-LEAD NTE6502	PDF
NTE4256 Abstract: No abstract text available Text: r MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2732A 24-Lead DIP, See Diag. 300 NMOS, 32K EPROM, UV, 200ns NTE2764 28-Lead DIP, See Diag. 510 NMOS, 64K EPROM, 200ns VppO A? 0 ~ ^ r _ 0 vcc A6 1 2 AS AS 1 B A9 A4 § j ] A11 ^ ÖE/Vpp A3 I A2 1	OCR Scan	NTE2732A 24-Lead 200ns NTE2764 28-Lead NTE2800 14-Lead 1400-Bit NTE4256	PDF