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NTE Electronics Inc NTE2996 N Channel Mosfet, 60V, 84A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:84A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes \|Nte Electronics NTE2996
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NTE2996	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
NTE Electronics Inc NTE2995 Power Mosfet N-Channel 600V Id=10A To-220 Case High Speed Switch Rohs Compliant: Yes \|Nte Electronics NTE2995
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Newark	NTE2995	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TME	NTE2995		12		1	1 $6.05 10 $4.81 100 $4.32 1000 $4.32 10000 $4.32	Buy Now
NTE Electronics Inc NTE2998 Power Mosfet P-Channel 200V Id=8A To-3 Case High Speed Switch \|Nte Electronics NTE2998
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Newark	NTE2998	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
NTE Electronics Inc NTE2999 Power Mosfet N-Channel 500V Id=10A To-220 Full Pack Case High Speed Switch Rds=0.73 Ohm Typ Rohs Compliant: Yes \|Nte Electronics NTE2999
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Newark	NTE2999	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
NTE Electronics Inc NTE2993 Mosfet, N Channel, 400V, 0.4Ohm, 14A, To-3; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:14A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V \|Nte Electronics NTE2993
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NTE2993	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TME	NTE2993		3		1	1 $36.4 10 $28.9 100 $26 1000 $26 10000 $26	Buy Now

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NTE299 Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NTE299		NTE Electronics	Silicon NPN Transistor RF Power Amp, Driver		Original	PDF
NTE299		NTE Electronics	Bipolar Transistors		Scan	PDF
NTE2991		NTE Electronics	MOSFET N-Channel, Enhancement Mode High Speed Switch		Original	PDF
NTE2992		NTE Electronics	MOSFET N-Channel, Enhancement Mode High Speed Switch		Original	PDF
NTE2993		NTE Electronics	MOSFET N-Channel, Enhancement Mode High Speed Switch		Original	PDF
NTE2996		NTE Electronics	MOSFET N-Channel, Enhancement Mode High Speed Switch		Original	PDF
NTE2999		NTE Electronics	MOSFET N-Channel, Enhancement Mode High Speed Switch		Original	PDF

NTE299 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NTE2906 Abstract: NTE2998 NTE290 Text: NTE2906 MOSFET N−Channel, Enhancement Mode High Speed Switch Compl to NTE2998 D Features: D High Speed Switching D High Voltage D High Energy Rating D Enhancement Mode D Integral Protection Diode G S Absolute Maximum Ratings: (TC = +25C unless otherwise specified)	Original	NTE2906 NTE2998) NTE2906 NTE2998 NTE290	PDF
NTE2996 Abstract: No abstract text available Text: NTE2996 MOSFET N-Channel, Enhancement Mode High Speed Switch Features: D Ultra Low On-Resistance D Dynamic dv/dt Rating D +175°C Operating Temperature D Fast Switching D Fully Avalanche Rated Absolute Maximum Ratings: Drain Current, ID Continuous VGS = 10V	Original	NTE2996 00A/s, NTE2996	PDF
NTE2996 Abstract: No abstract text available Text: NTE2996 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D Ultra Low On−Resistance D Dynamic dv/dt Rating D +175°C Operating Temperature D Fast Switching D Fully Avalanche Rated Absolute Maximum Ratings: Drain Current, ID Continuous VGS = 10V	Original	NTE2996 NTE2996	PDF
NTE2998 Abstract: p-channel 200V Text: NTE2998 MOSFET P−Channel, Enhancement Mode High Speed Switch D Features: D High Speed Switching D High Voltage D High Energy Rating D Enhancement Mode D Integral Protection Diode G S Absolute Maximum Ratings: TC = +25°C unless otherwise specified Drain−Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V	Original	NTE2998 NTE2998 p-channel 200V	PDF
NTE2995 Abstract: No abstract text available Text: NTE2995 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D RDS on = 0.65Ω Typical D Extremely High dv/dt Capability D Gate Charge Minimized D Gate−to−Source Zener Diode Protected Applications: D High Current, High Speed Switching D Ideal for Off−Line Power Supplies, Adaptor and PFC	Original	NTE2995 NTE2995	PDF
NTE2991 Abstract: No abstract text available Text: NTE2991 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D Ultra Low On−Resistance D Dynamic dv/dt Rating D +175°C Operating Temperature D Fast Switching D Fully Avalanche Rated Absolute Maximum Ratings: Drain Current, ID Continuous VGS = 10V	Original	NTE2991 NTE2991	PDF
NTE2998 Abstract: NTE2906 p-channel 200V NTE299 Text: NTE2998 MOSFET P−Channel, Enhancement Mode High Speed Switch Compl to NTE2906 D Features: D High Speed Switching D High Voltage D High Energy Rating D Enhancement Mode D Integral Protection Diode G S Absolute Maximum Ratings: (TC = +25C unless otherwise specified)	Original	NTE2998 NTE2906) NTE2998 NTE2906 p-channel 200V NTE299	PDF
NTE2994 Abstract: mosfet 300V 10A datasheet Text: NTE2994 MOSFET N−Channel, Enhancement Mode High Speed Switch Absolute Maximum Ratings: TC = +25°C unless otherwise specified Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V	Original	NTE2994 NTE2994 mosfet 300V 10A datasheet	PDF
NTE2993 Abstract: No abstract text available Text: NTE2993 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D Repetitive Avalanche Ratings D Dynamic dv/dt Rating D Simple Drive Requirements D Ease of Paralleling Absolute Maximum Ratings: Drain−Source Voltage VGS = 0V, ID = 1mA , VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V	Original	NTE2993 NTE2993	PDF
NTE299 Abstract: No abstract text available Text: NTE299 Silicon NPN Transistor RF Power Amp, Driver Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V	Original	NTE299 27MHz, 166mA NTE299	PDF
d-215 diode Abstract: NTE2997 Text: NTE2997 MOSFET P−Channel, Enhancement Mode High Speed Switch Features: D Good Frequency Characteristics D High Speed Switching D Wide Area of Safe Operation D Enhancement Mode D Equipped with Gate Protection Diodes D G S Applications: D Low Frequency Power Amplifier	Original	NTE2997 d-215 diode NTE2997	PDF
Untitled Abstract: No abstract text available Text: NTE2994 MOSFET N−Channel, Enhancement Mode High Speed Switch Absolute Maximum Ratings: TC = +25°C unless otherwise specified Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V	Original	NTE2994	PDF
Untitled Abstract: No abstract text available Text: NTE2993 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D Fast Switching D Low Drive Current D Ease of Paralleling D No Second Breakdown D Excellent Temperature Stability Absolute Maximum Ratings: TA = +25°C unless otherwise specified Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V	Original	NTE2993	PDF
NTE2999 Abstract: MOSFET 300V Text: NTE2999 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D High Speed Switching D Low On−Resistance D No Secondary Breakdown D Low Driving Power D Avalanche−Proof D G Applications: D Switching Regulators D UPS Uninterruptible Power Supply	Original	NTE2999 NTE2999 MOSFET 300V	PDF

NTE2990 Abstract: Power MOSFET P-Channel 250V 50A Text: NTE2990 MOSFET P−Channel, Enhancement Mode High Speed Switch Features: D Low Drain−Source On−Resistance D Low Input Capacitance D High Avalanche Capability Ratings Applications: D Switching Regulators D UPS D DC−DC Converters D General Purpose Power Amplifier	Original	NTE2990 NTE2990 Power MOSFET P-Channel 250V 50A	PDF
SSH6N80 Abstract: ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020 Text: STI Type: MTM8N55 Notes: Breakdown Voltage: 550 Continuous Current: 8 RDS on Ohm: .50 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.5 Gate Threshold min: Gate Threshold max: Resistance Switching ton: 70 Resistance Switching toff: 430 Resistance Switching ID: 4.0	Original	MTM8N55 O-204AA/TO-3 MTM8N60 MTM8N40 O-262/I-2 SSI2N60B SSI4N60B SSH6N80 ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020	PDF