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    NTE60 Price and Stock

    NTE Electronics Inc NTE6093

    Rectifier Diodes, common Cathode, schottky,60V V(Rrm),to-247Var |Nte Electronics NTE6093
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    Onlinecomponents.com NTE6093 9
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    • 10 $9.75
    • 100 $7.52
    • 1000 $6.69
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    NTE Electronics Inc NTE601

    Forward Reference Diode,610Mv V(Fm),axial-B |Nte Electronics NTE601
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    NTE Electronics Inc NTE6060

    Standard Diode, 70A, 400V, Do-5; Repetitive Peak Reverse Voltage:400V; Average Forward Current:70A; Forward Voltage Max:1.25V; Diode Module Configuration:-; Diode Case Style:Do-5; No. Of Pins:2Pins; Operating Temperature Max:190°C Rohs Compliant: Yes |Nte Electronics NTE6060
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    Bristol Electronics NTE6060 2 1
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    NTE Electronics Inc NTE6065

    Diode, Rectifier, 70A, 600V, Do-5; Repetitive Peak Reverse Voltage:600V; Average Forward Current:70A; Forward Voltage Max:1.25V; Diode Module Configuration:-; Diode Case Style:Do-5; No. Of Pins:2Pins; Operating Temperature Max:190°C Rohs Compliant: Yes |Nte Electronics NTE6065
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    NTE Electronics Inc NTE6068

    Rectifier, 70A, 800V, Do-5; Repetitive Peak Reverse Voltage:800V; Average Forward Current:70A; Forward Voltage Max:1.25V; Diode Module Configuration:-; Diode Case Style:Do-5; No. Of Pins:2Pins; Operating Temperature Max:190°C Rohs Compliant: Yes |Nte Electronics NTE6068
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    RS NTE6068 Bulk 1 3 Weeks 1
    • 1 $19.17
    • 10 $15.9
    • 100 $14.57
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    NTE60 Datasheets (78)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE60 NTE Electronics NPN Silicon Complementary Transistor High Power Audio, Disk Head Positioner for Linear Applications Original PDF
    NTE6002 NTE Electronics Silicon Power Rectifier Diode, 40 Amp Original PDF
    NTE6003 NTE Electronics Silicon Power Rectifier Diode, 40 Amp Original PDF
    NTE6004 NTE Electronics Silicon Power Rectifier Diode, 40 Amp Original PDF
    NTE6005 NTE Electronics Silicon Power Rectifier Diode, 40 Amp Original PDF
    NTE6006 NTE Electronics Fast Recovery Rectifier, 40A, 200ns Original PDF
    NTE6007 NTE Electronics Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A. Original PDF
    NTE6008 NTE Electronics Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A. Original PDF
    NTE6009 NTE Electronics Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A. Original PDF
    NTE601 NTE Electronics Silicon Varistor Temperature Compensating Diode Original PDF
    NTE6010 NTE Electronics Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 600V. Average rectified forward current 40A. Original PDF
    NTE6011 NTE Electronics Fast Recovery Rectifier, 40A, 200ns Original PDF
    NTE6013 NTE Electronics Silicon Industrial Rectifier 20 Amp Original PDF
    NTE6020 NTE Electronics Industrial Silicon Rectifier, 60A Original PDF
    NTE6021 NTE Electronics Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 50V. Max average forward current 60A. Original PDF
    NTE6022 NTE Electronics Industrial silicon recfifier. Cathode to case. Max peak repetitive reverse voltage 100V. Max average forward current 60A. Original PDF
    NTE6023 NTE Electronics Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 100V. Max average forward current 60A. Original PDF
    NTE6026 NTE Electronics Industrial silicon recfifier. Cathode to case. Max peak repetitive reverse voltage 200V. Max average forward current 60A. Original PDF
    NTE6027 NTE Electronics Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 200V. Max average forward current 60A. Original PDF
    NTE6030 NTE Electronics Industrial silicon recfifier. Cathode to case. Max peak repetitive reverse voltage 300V. Max average forward current 60A. Original PDF

    NTE60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp, DO5 Features: D High Surge Current Capability D High Voltage Available D Designed for a Wide Range of Applications D Available in Anode−to−Case or Cathode−to−Case Style Ratings and Characteristics:


    Original     		PDF NTE5906, NTE5907, NTE5980 NTE6005

    NTE6087

    Abstract: avalanche diode 30A 30A 45V SCHOTTKY BARRIER RECTIFIER
    Text: NTE6087 Dual Schottky Barrier Silicon Rectifier 45V, 30 Amp, TO220 Features: D Guarding for Stress Protection D Low Forward Voltage D +150°C Operating Junction Temperature D Guaranteed Reverse Avalanche Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V


    Original     		PDF NTE6087 NTE6087 avalanche diode 30A 30A 45V SCHOTTKY BARRIER RECTIFIER

    diode schottky 1000V 10a

    Abstract: 20A SCHOTTKY BARRIER RECTIFIER NTE6080 diode 1000V 20a Schottky diode TO220
    Text: NTE6080 Silicon Schottky Barrier Rectifier 60V, 10 Amp, 2−Lead TO220 Description: The NTE6080 is a silicon switchmode power rectifier using the Schottky Barrier principle with a platinum barrier metal. Features: D Guard−Ring for Stress Protection D Low Forward Voltage


    Original     		PDF NTE6080 NTE6080 150mA diode schottky 1000V 10a 20A SCHOTTKY BARRIER RECTIFIER diode 1000V 20a Schottky diode TO220

    NTE5980

    Abstract: NTE5906 NTE5907 NTE6005 "Power rectifier Diode"
    Text: NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp, DO5 Features: D High Surge Current Capability D High Voltage Available D Designed for a Wide Range of Applications D Available in Anode−to−Case or Cathode−to−Case Style Ratings and Characteristics:


    Original     		PDF NTE5906, NTE5907, NTE5980 NTE6005 500Aal-Mechanical NTE5906 NTE5907 NTE6005 "Power rectifier Diode"

    Untitled

    Abstract: No abstract text available
    Text: NTE600 Silicon Varistor Temperature Compensating Diode Features: D Temperature Compensation Applications D Bias Compensation Applications D Hermetically Sealed Miniature Glass Package Absolute Maximum Ratings; Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V


    Original     		PDF NTE600 150mA

    Untitled

    Abstract: No abstract text available
    Text: NTE6088 Silicon Dual Schottky Rectifier Description: The NTE6088 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Low Power Loss, High Efficiency D Guarding for Stress Protection


    Original     		PDF NTE6088 NTE6088

    NTE6047

    Abstract: NTE6046
    Text: NTE6046 & NTE6047 Silicon Power Rectifier Diode, 85 Amp Features: D Short Reverse Recovery Time D Low Stored Charge D Available in Cathode–to–Case NTE6046 or Anode–to–Case (NTE6047) Style Ratings and Characteristics: Average Forward Current (TC = +75°C Max), IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85A


    Original     		PDF NTE6046 NTE6047 NTE6046) NTE6047) NTE6047 NTE6046

    NTE6036

    Abstract: NTE6037
    Text: NTE6036 & NTE6037 Silicon Power Rectifier Diode, 85 Amp Features: D Short Reverse Recovery Time D Low Stored Charge D Available in Cathode–to–Case NTE6036 or Anode–to–Case (NTE6037) Style Ratings and Characteristics: Average Forward Current (TC = +75°C Max), IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85A


    Original     		PDF NTE6036 NTE6037 NTE6036) NTE6037) NTE6036 NTE6037

    NTE6086

    Abstract: NTE6088 diode schottky 1000V 10a
    Text: NTE6088 Silicon Dual Schottky Rectifier Description: The NTE6086 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D 20 Amps Total 10 Amps Pre Diode Leg D Guarding for Stress Protection


    Original     		PDF NTE6088 NTE6086 NTE6088 diode schottky 1000V 10a

    NTE6080

    Abstract: No abstract text available
    Text: NTE6080 Silicon Schottky Barrier Rectifier Description: The NTE6080 is a silicon switchmode power rectifier using the Schottky Barrier principle with a platinum barrier metal. Features: D Guard–Ring for Stress Protection D Low Forward Voltage D +150°C Operating Junction Temperature


    Original     		PDF NTE6080 NTE6080 150mA

    NTE6032

    Abstract: NTE6033
    Text: NTE6032 & NTE6033 Silicon Power Rectifier Diode, 40 Amp Features: D Fast Recovery Time D Low Stored Charge D Available in Cathode–to–Case NTE6032 or Anode–to–Case (NTE6033) Style Ratings and Characteristics: Average Forward Current (TC = +75°C Max), IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A


    Original     		PDF NTE6032 NTE6033 NTE6032) NTE6033) NTE6032 NTE6033

    NTE6076

    Abstract: NTE6077 NTE6078 NTE6079 NTE6070 NTE6071 NTE6074 NTE6075
    Text: NTE6070 thru NTE6079 Industrial Silicon Rectifiers 85 Amp, DO5 Description: The NTE6070 thru NTE6079 series of 85 Amp power rectifiers are stud mounted DO5 packages. Because the silicon junction is carefully fitted within a glass to−metal hermetically sealed case, reliable operation is assured, even with extreme humidity and under other severe environmental conditions.


    Original     		PDF NTE6070 NTE6079 NTE6079 NTE6076 NTE6077 NTE6078 NTE6071 NTE6074 NTE6075

    NTE6083

    Abstract: No abstract text available
    Text: NTE6083 Schottky Barrier Rectifier 45V, 10 Amp, 2−Lead TO220 Features: D Low Power Loss, High Efficiency D High Current Capability, Low VF D High Surge Capacity Applications: D Low Voltage, High Frequency Inverters D Free Wheeling Applications D Polarity Protection Applications


    Original     		PDF NTE6083 NTE6083

    NTE6008

    Abstract: NTE6010 NTE6007 NTE6009 NTE6006 NTE6011
    Text: NTE6006 thru NTE6011 Fast Recovery Rectifier, 200ns 40 Amp, DO5 Description: The NTE6006 through NTE6011 are fast recovery silicon rectifiers in a DO5 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference, sonar power supplies, and free wheeling diodes. A complete line of fast


    Original     		PDF NTE6006 NTE6011 200ns NTE6011 150ns 250kHz. NTE6006, NTE6007* NTE6008 NTE6010 NTE6007 NTE6009

    NTE5980

    Abstract: NTE5906 NTE5907 NTE6005
    Text: NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp Features: D D D D High Surge Current Capability High Voltage Available Designed for a Wide Range of Applications Available in Anode–to–Case or Cathode–to–Case Style Ratings and Characteristics:


    Original     		PDF NTE5906, NTE5907, NTE5980 NTE6005 50rmal NTE5906 NTE5907 NTE6005

    NTE6092

    Abstract: No abstract text available
    Text: NTE6092 Silicon Schottky Barrier Rectifier Features: D Guarding for Stress Protection D Low Forward Voltage D +125°C Operating Junction Temperature Maximum and Electrical Ratings: Maximum Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V


    Original     		PDF NTE6092 100mA NTE6092

    NTE6074

    Abstract: NTE6077 NTE6078 NTE6079 NTE6071 NTE6070 NTE6075 NTE6076
    Text: NTE6070 thru NTE6079 85 Amp Stud Mount Rectifiers Description: The NTE6070 thru NTE6079 series of 85 Amp power rectifiers are stud mounted DO–5 packages. Because the silicon junction is carefully fitted within a glass to–metal hermetically sealed case, reliable operation is assured, even with extreme humidity and under other severe environmental conditions.


    Original     		PDF NTE6070 NTE6079 NTE6079 NTE6074 NTE6077 NTE6078 NTE6071 NTE6075 NTE6076

    NTE6086

    Abstract: diode schottky 1000V 10a
    Text: NTE6086 Silicon Dual Schottky Rectifier Description: The NTE6086 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D 20 Amps Total 10 Amps Pre Diode Leg D Guarding for Stress Protection


    Original     		PDF NTE6086 NTE6086 diode schottky 1000V 10a

    NTE6082

    Abstract: No abstract text available
    Text: NTE6082 Silicon Schottky Barrier Rectifier Description: The NTE6082 is a silicon switchmode power rectifier using the Schottky Barrier principle with a platinum barrier metal. Features: D Guardiring for Stress Protection D Low Forward Voltage D +150°C Operating Junction Temperature


    Original     		PDF NTE6082 NTE6082

    NTE6084

    Abstract: No abstract text available
    Text: NTE6084 Silicon Rectifier Schottky Barrier Description: The NTE6084 is a silicon power rectifier in a DO4 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Guardring for Stress Protection D Low Forward Voltage


    Original     		PDF NTE6084 NTE6084 100kHz

    NTE6081

    Abstract: No abstract text available
    Text: NTE6081 Silicon Schottky Barrier Rectifier Description: The NTE6081 is a silicon switchmode power rectifier using the Schottky Barrier principle with a platinum barrier metal. Features: D Guardiring for Stress Protection D Low Forward Voltage D +150°C Operating Junction Temperature


    Original     		PDF NTE6081 NTE6081

    NTE6008

    Abstract: sonar NTE6006 NTE6007 NTE6009 NTE6010 NTE6011
    Text: NTE6006 thru NTE6011 Fast Recovery Rectifier, 40A, 200ns Description: The NTE6006 through NTE6011 are fast recovery silicon rectifiers in a DO5 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference, sonar power supplies, and free wheeling diodes. A complete line of fast


    Original     		PDF NTE6006 NTE6011 200ns NTE6011 150ns 250kHz. NTE6006, NTE6007* NTE6008 sonar NTE6007 NTE6009 NTE6010

    NTE6091

    Abstract: No abstract text available
    Text: NTE6091 Silicon Schottky Barrier Rectifier Features: D Guarding for Stress Protection D Low Forward Voltage D +125°C Operating Junction Temperature Maximum and Electrical Ratings: Maximum Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V


    Original     		PDF NTE6091 100mA NTE6091

    NTE601

    Abstract: Varistor Temperature Compensating Diode
    Text: NTE601 Silicon Varistor Temperature Compensating Diode Features: D High reliability planar chip and glass sealing D Low IR D Large PD Absolute Maximum Ratings: TA = +25°C unless otherwise specified Maximum Forward Current, IFM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA


    Original     		PDF NTE601 150mA 150mW NTE601 Varistor Temperature Compensating Diode