nand512w3a2dn6
Abstract: NAND02GW3B2DZA6 NAND512R3A2DZA6E NAND512W3A2DN6E NAND01GW3B2CZA6E VFBGA63 nand02gw3b2dn6e NAND256W3A0BE06 NAND01GW3B2CN6E NAND02GW3B2DZA6E
Text: product line card Numonyx NAND flash memory Numonyx® NAND flash memory A broad offering of discrete parts to meet a variety of application requirements PRODUCT overview Density Part Number Density NAND Family Voltage Bus Width - Flash Package Type Package Dimension
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NAND128W3A2BN6E
TSOP48
12x20mm
NAND128W3A0BN6E
NAND128W3A2BDI6
NAND256W3A2BN6E
nand512w3a2dn6
NAND02GW3B2DZA6
NAND512R3A2DZA6E
NAND512W3A2DN6E
NAND01GW3B2CZA6E
VFBGA63
nand02gw3b2dn6e
NAND256W3A0BE06
NAND01GW3B2CN6E
NAND02GW3B2DZA6E
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NI3205
Abstract: NAND04GW3B2
Text: Numonyx NAND SLC large page 41 nm Discrete 4 Gbit, 2112 Byte/1056 Word page, x8/x16, 1.8 or 3 V, multiplane architecture Features – Cache read – Multiplane block erase • Density – 4 Gbit: 4096 blocks ■ NAND Flash interface – x8 or x16 bus width
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Byte/1056
x8/x16,
NI3205
NAND04GW3B2
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Numonyx
Abstract: AN1822 "flash translation layer" Flash Translation Layer NAND FLASH TRANSLATION LAYER FTL NAND16GW3D2A AN1821 NAND FLASH TRANSLATION LAYER patent FLASH TRANSLATION LAYER FTL NAND flash memory
Text: AN1821 Application note Garbage collection in NAND flash memories This application note describes the garbage collection algorithm that Numonyx recommends to implement in the flash translation layer FTL software for NAND flash memories. 1 Introduction The flash translation layer is an additional software layer between the file system and the
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AN1821
Numonyx
AN1822
"flash translation layer"
Flash Translation Layer
NAND FLASH TRANSLATION LAYER FTL
NAND16GW3D2A
AN1821
NAND FLASH TRANSLATION LAYER patent
FLASH TRANSLATION LAYER FTL
NAND flash memory
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NAND02GR3B2D
Abstract: No abstract text available
Text: Numonyx NAND SLC large page 41 nm Discrete 2 and 4 Gbit, 2112 Byte/1056 Word page, x8/x16, 1.8 or 3 V, multiplane architecture Features • – Single and multiplane cache program – Cache read – Multiplane block erase Density – 2 Gbit: 2048 blocks ®
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Byte/1056
x8/x16,
NAND02GR3B2D
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NAND512W3A2S
Abstract: nand512r3a2s VFBGA63 NAND512W4A2S 70nM NUMonyx NAND NAND512W3A2
Text: Numonyx NAND SLC small page 70 nm Discrete 512 Mbit, 528 Byte/264 Word page, x8/x16, 1.8 V/3 V Features – Hardware program/erase locked during power transitions Density – 512 Mbit: 4096 blocks Electronic signature – Manufacturer ID: x8 device: 20h
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Byte/264
x8/x16,
NAND512W3A2S
nand512r3a2s
VFBGA63
NAND512W4A2S
70nM
NUMonyx NAND
NAND512W3A2
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NAND512W3A2S
Abstract: NAND512R4A2S NAND512W4A2S
Text: Numonyx NAND SLC small page 70 nm Discrete 512 Mbit, 528 Byte/264 Word page, x8/x16, 1.8 V/3 V Features – Hardware program/erase locked during power transitions Density – 512 Mbit: 4096 blocks Electronic signature – Manufacturer ID: x8 device: 20h
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Byte/264
x8/x16,
NAND512W3A2S
NAND512R4A2S
NAND512W4A2S
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MT29F4G08AACWC
Abstract: HY27US08121B HYNIX LGA52 nand512w3a2cn MT29F4G08ABCHC NUMONYX MT29F2G08ABCWP LGA-52 K9F1G08U0B
Text: Nand Flash Support Versus Firmware Package Firmware package can contain several Nand Flash configurations. Please, refer to documentation included in package for more informations about Nand Flash configuration. COLOR LEGEND Supported and fast see notes F1,F2
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K9F5608U0D-P
K9F5608U0D-F
K9F1208U0C-P
K9F1G08U0B-P
K9F2G08U0A-P
K9F4G08U0A-P
K9K8G08U0A-P
K9WAG08U1A-P
K9NBG08U5A-P
NAND128W3Axx-N
MT29F4G08AACWC
HY27US08121B
HYNIX
LGA52
nand512w3a2cn
MT29F4G08ABCHC
NUMONYX
MT29F2G08ABCWP
LGA-52
K9F1G08U0B
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NAND32GW3F4A
Abstract: No abstract text available
Text: NAND32GW3F4A 32-Gbit 4 x 8 Gbits , two Chip Enable, 4224-byte page, 3 V supply, single level, multiplane, NAND flash memory Preliminary Data Features • High-density NAND flash memory – 32 Gbits of memory array – 1024 Mbits of spare area – Cost-effective solutions for mass storage
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NAND32GW3F4A
32-Gbit
4224-byte
NAND32GW3F4A
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Numonyx admux
Abstract: JZ58F0101M0Y0GE SCSP M18 JZ58F0085M0Y0GF numonyx nand flash Intel nor flash 1024-Mbit PSRAM Numonyx StrataFlash M18
Text: Numonyx StrataFlash Cellular Memory M18 M18 SCSP Family with Synchronous PSRAM, x16 Shared Bus, 10x10 PoP Ballout Datasheet Product Features Device Architecture — Flash Die Density: 512Mbit-1Gbit — PSRAM Die Density: 128-256Mbit
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10x10
512Mbit-1Gbit
128-256Mbit
104-Ball
512Mb
133Mhz
133Mhz
Numonyx admux
JZ58F0101M0Y0GE
SCSP M18
JZ58F0085M0Y0GF
numonyx nand flash
Intel nor flash
1024-Mbit
PSRAM
Numonyx StrataFlash M18
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Untitled
Abstract: No abstract text available
Text: NAND32GW3D4A 32-Gbit 2 x 16 Gbits , two Chip Enable, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 32 Gbits of memory array – 1 Mbit of spare area
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NAND32GW3D4A
32-Gbit
4224-byte
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Untitled
Abstract: No abstract text available
Text: NAND32GW3F4A 32-Gbit 4 x 8 Gbits , two Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • High-density SLC NAND flash memory – 32 Gbits of memory array – 1 Gbit of spare area – Cost-effective solutions for mass storage
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NAND32GW3F4A
32-Gbit
4224-byte
TSOP48
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Untitled
Abstract: No abstract text available
Text: NAND32GW3F4A 32-Gbit 4 x 8 Gbits , two Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • High-density SLC NAND flash memory – 32 Gbits of memory array – 1 Gbit of spare area – Cost-effective solutions for mass storage
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NAND32GW3F4A
32-Gbit
4224-byte
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NAND16GW3F4A
Abstract: 16G nand
Text: NAND16GW3F4A 16-Gbit 2 x 8 Gbits , two Chip Enable, 4224-byte page, 3 V supply, single level, multiplane, NAND flash memory Preliminary Data Features • High-density NAND flash memory – 16 Gbits of memory array – Cost-effective solutions for mass storage
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NAND16GW3F4A
16-Gbit
4224-byte
NAND16GW3F4A
16G nand
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Untitled
Abstract: No abstract text available
Text: NAND16GW3B6D 16-Gbit 4 x 4 Gbits , four Chip Enable, 2112-byte page, 3 V supply, single level, multiplane, NAND flash memory Preliminary Data Features • ■ High-density NAND flash memory – 16 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage
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NAND16GW3B6D
16-Gbit
2112-byte
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JESD97
Abstract: NAND04G-B2D TSOP48 outline
Text: NAND16GW3B4D 16-Gbit 4 x 4 Gbits , two Chip Enable, 2112-byte page, 3 V supply, single level, multiplane, NAND flash memory Preliminary Data Features • High-density NAND flash memory – 16 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage
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NAND16GW3B4D
16-Gbit
2112-byte
TSOP48
JESD97
NAND04G-B2D
TSOP48 outline
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NAND16GW3F4A
Abstract: No abstract text available
Text: NAND16GW3F4A 16-Gbit 2 x 8 Gbits , two Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • High-density SLC NAND flash memory – 16 Gbits of memory array – Cost-effective solutions for mass storage
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NAND16GW3F4A
16-Gbit
4224-byte
NAND16GW3F4A
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bad block management in mlc nand
Abstract: No abstract text available
Text: NAND32GW3D4A 32-Gbit 2 x 16 Gbits , two Chip Enable, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 32 Gbits of memory array – 1 Gbit of spare area
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NAND32GW3D4A
32-Gbit
4224-byte
bad block management in mlc nand
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32Gbit
Abstract: 16 GBit flash 32G nand flash nand32 NAND32G
Text: NAND32GW3F4A 32-Gbit 4 x 8 Gbits , two Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Features • High-density SLC NAND flash memory – 32 Gbits of memory array – 1 Gbit of spare area – Cost-effective solutions for mass storage
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NAND32GW3F4A
32-Gbit
4224-byte
32Gbit
16 GBit flash
32G nand flash
nand32
NAND32G
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JESD97
Abstract: NAND08GW3C2B NAND16GW3C4B 16Gbit
Text: NAND16GW3C4B 16-Gbit 2 x 8 Gbits , two Chip Enable, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 16 Gbits of memory array – 512 Mbits of spare area
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NAND16GW3C4B
16-Gbit
2112-byte
JESD97
NAND08GW3C2B
NAND16GW3C4B
16Gbit
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RAS 0510
Abstract: NAND98R3M0 NAND99R NAND99W3M1 Numonyx MCP nand98 SDR256 NAND98W NAND98W3M0 NAND98R
Text: NANDxxxxMx 256/512-Mbit or 1-Gbit x8/x16, 1.8/2.6 V, 528-byte page NAND flash and 256/512-Mbit (x16/x32, 1.8 V) LPSDRAM, MCP or PoP Features n n n Packages – MCP (multichip package) – PoP (package on package) Device composition – 1 die of 256 or 512 Mbits or 1 Gbit (x8/x16)
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256/512-Mbit
x8/x16,
528-byte
256/512-Mbit
x16/x32,
x8/x16)
TFBGA107
TFBGA149
TFBGA137
LFBGA137
RAS 0510
NAND98R3M0
NAND99R
NAND99W3M1
Numonyx MCP
nand98
SDR256
NAND98W
NAND98W3M0
NAND98R
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NAND98W3M0
Abstract: NAND98R3M0 NAND99R NAND98R
Text: NANDxxxxMx 256/512-Mbit or 1-Gbit x8/x16, 1.8/2.6 V, 528-byte page NAND flash and 256/512-Mbit (x16/x32, 1.8 V) LPSDRAM, MCP or PoP Features Packages – MCP (multichip package) – PoP (package on package) • Device composition – 1 die of 256 or 512 Mbits or 1 Gbit (x8/x16)
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256/512-Mbit
x8/x16,
528-byte
256/512-Mbit
x16/x32,
x8/x16)
TFBGA107
TFBGA149
TFBGA137
TFBGA152
NAND98W3M0
NAND98R3M0
NAND99R
NAND98R
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Untitled
Abstract: No abstract text available
Text: NAND16GW3C4B 16-Gbit 2 x 8 Gbits , two Chip Enable, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 16 Gbits of memory array – 512 Mbits of spare area
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NAND16GW3C4B
16-Gbit
2112-byte
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Numonyx
Abstract: NAND01GWxA2B-KGD NAND01GW3A2B-KGD NAND01GW4A2B-KGD AI07587 NAND01G AI13144
Text: NAND01GW3A2B-KGD NAND01GW4A2B-KGD Known Good Die, 1 Gbit x 8/x 16 , 528 Byte/264 word page, 3 V, NAND Flash memory Features • High density NAND Flash memory – 1 Gbit memory array – 32 Mbit spare area – Cost effective solutions for mass storage applications
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NAND01GW3A2B-KGD
NAND01GW4A2B-KGD
Byte/264
Numonyx
NAND01GWxA2B-KGD
NAND01GW3A2B-KGD
NAND01GW4A2B-KGD
AI07587
NAND01G
AI13144
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64Gbit
Abstract: NAND64GW3D4A bad block management in mlc nand JESD97 package tsop48 NUMonyx NAND64G
Text: NAND64GW3D4A 64-Gbit 4 x 16 Gbits , two Chip Enable, 4224-byte page, multi level cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multi level cell (MLC) flash memory – 64 Gbits of memory array – 2 Gbits of spare area
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NAND64GW3D4A
64-Gbit
4224-byte
64Gbit
NAND64GW3D4A
bad block management in mlc nand
JESD97
package tsop48
NUMonyx NAND64G
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