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    NVJS4151P Search Results

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    NVJS4151P Price and Stock

    onsemi NVJS4151PT1G

    MOSFET P-CH 20V 3.2A SC88
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    DigiKey NVJS4151PT1G Reel 48,000 3,000
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    NVJS4151PT1G 3,000 21 Weeks 3,000
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    NVJS4151PT1G 8,751 32
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    NVJS4151PT1G 3,000 3,000
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    Avnet Americas NVJS4151PT1G Reel 0 Weeks, 2 Days 3,677
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    NVJS4151PT1G Reel 6,000
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    Mouser Electronics NVJS4151PT1G 29,349
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    Rochester Electronics NVJS4151PT1G 303,000 1
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    NVJS4151P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NVJS4151PT1G ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 20V 3.2A SC88 Original PDF

    NVJS4151P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: NVJS4151P Trench Power MOSFET −20 V, −4.3 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board http://onsemi.com Utilization, Same as SC−70−6


    Original     		NVJS4151P NVJS4151P/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NVJS4151P Trench Power MOSFET −20 V, −4.1 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board • • • Utilization, Same as SC−70−6


    Original     		NVJS4151P NVJS4151P/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTJS4151P, NVJS4151P Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board • • • Utilization, Same as SC−70−6


    Original     		NTJS4151P, NVJS4151P NTJFS4151P/D PDF