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    OA 70-60 DIODE Search Results

    OA 70-60 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    OA 70-60 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN2817B DBF20 Diffused Junction Silicon Diode DBF20 2.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=200, 600V. Average rectified current : IO=2.0A.


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    ENN2817B DBF20 DBF20] DBF20C DBF20G PDF

    DBF20

    Abstract: DBF20C DBF20G
    Text: Ordering number : ENN2817B DBF20 Diffused Junction Silicon Diode DBF20 2.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=200, 600V. Average rectified current : IO=2.0A.


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    ENN2817B DBF20 DBF20] DBF20 DBF20C DBF20G PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN2817B DBF20 Diffused Junction Silicon Diode DBF20 2.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=200, 600V. Average rectified current : IO=2.0A.


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    ENN2817B DBF20 DBF20] PDF

    bridge RECTIFIER GI

    Abstract: DBF20 DBF20C DBF20G
    Text: Ordering number : ENN2817B DBF20 Diffused Junction Silicon Diode DBF20 2.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=200, 600V. Average rectified current : IO=2.0A.


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    ENN2817B DBF20 DBF20] bridge RECTIFIER GI DBF20 DBF20C DBF20G PDF

    OK Industries

    Abstract: No abstract text available
    Text: NEW PRODUCT INFORMATION GL1F20 APPLICATIONS: • Personal Computer • Personal Digital Assistant • Printer • Word Processor IR Data Communication Emitter IR EMITTING DIODE FOR IR DATA COMMUNICATION CONFORM TO IRDA 1.0 OUTLINE DIMENSIONS (Unit:mm) 5.6


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    GL1F20 GL1F20 GL1F20/IS1U20 GL1F20) IS1U20) rate55-0942 OK Industries PDF

    sod323 reflow

    Abstract: SOD523 footprint SOT323 reflow 1PS76SB70 1PS79SB70 BAS70 BAS70-04 BAS70-04W BAS70-05 BAS70-05W
    Text: BAS70 series; 1PS7xSB70 series General-purpose Schottky diodes Rev. 07 — 18 July 2005 Product data sheet 1. Product profile 1.1 General description General-purpose Schottky diodes in small Surface Mounted Device SMD plastic packages. Table 1: Product overview


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    BAS70 1PS7xSB70 1PS76SB70 OD323 SC-76 1PS79SB70 OD523 SC-79 BAS70 BAS70H sod323 reflow SOD523 footprint SOT323 reflow 1PS76SB70 1PS79SB70 BAS70-04 BAS70-04W BAS70-05 BAS70-05W PDF

    video rgb splitter amplifier schematic

    Abstract: MARKING 6551 LT6550 LT6550CMS LT6550IMS LT6551 marking ms10 ltb9
    Text: Final Electrical Specifications LT6550/LT6551 3.3V Triple and Quad Video Amplifiers U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Single Supply Operation from 3V to 12.6V Small 3mm x 5mm MSOP 10-Lead Package Internal Resistors for a Gain of Two


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    LT6550/LT6551 10-Lead 110MHz 30MHz 15-Bit Cor1396/LT1397 400MHz LT1398/LT1399 300MHz 150MHz, video rgb splitter amplifier schematic MARKING 6551 LT6550 LT6550CMS LT6550IMS LT6551 marking ms10 ltb9 PDF

    xl 1507

    Abstract: smd diode s30 lp 13201
    Text: Diodes l External dimensions Units: mm l Features 1)Compact power mold type (PMDS) 2)Extremely low forward voltage 3)V~i~=40V guaranteed CATHODEMARK l Construction Silicon epitaxial planar Product name Date of manufactu PMDS @Absolute maximum ratings (Ta=25 C)


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    60tiz xl 1507 smd diode s30 lp 13201 PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


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    REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 PDF

    RGB TO YPBPR

    Abstract: video rgb splitter amplifier schematic LT6550 LT6551 MS10 ltb9 ltc3 0114B
    Text: LT6550/LT6551 3.3V Triple and Quad Video Amplifiers U FEATURES DESCRIPTIO • The LT 6550/LT6551 are 3.3V triple and quad high speed video amplifiers. These voltage feedback amplifiers drive double terminated 50Ω or 75Ω cables and are configured for a fixed gain of 2, eliminating six or eight external gain


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    LT6550/LT6551 6550/LT6551 LT6550/LT6551 110MHz 10-Lead 30MHz RaiLT1396/LT1397 400MHz LT1398/LT1399 RGB TO YPBPR video rgb splitter amplifier schematic LT6550 LT6551 MS10 ltb9 ltc3 0114B PDF

    RGB TO YPBPR

    Abstract: LT6550 video rgb splitter amplifier schematic LT6550CMS LT6550IMS LT6551
    Text: LT6550/LT6551 3.3V Triple and Quad Video Amplifiers U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Single Supply Operation from 3V to 12.6V Small 3mm x 5mm MSOP 10-Lead Package Internal Resistors for a Gain of Two 340V/µs Slew Rate


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    LT6550/LT6551 10-Lead 110MHz 30MHz 24-Bit 6550/LT6551T1396/LT1397 400MHz LT1398/LT1399 300MHz 150MHz, RGB TO YPBPR LT6550 video rgb splitter amplifier schematic LT6550CMS LT6550IMS LT6551 PDF

    Untitled

    Abstract: No abstract text available
    Text: LT6550/LT6551 3.3V Triple and Quad Video Amplifiers FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Single Supply Operation from 3V to 12.6V Small 3mm x 5mm MSOP 10-Lead Package Internal Resistors for a Gain of Two 340V/µs Slew Rate


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    LT6550/LT6551 10-Lead 110MHz 30MHz 24-Bit 6550/LT6551 These97 400MHz LT1398/LT1399 300MHz PDF

    Diode KD 514

    Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
    Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381


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    Untitled

    Abstract: No abstract text available
    Text: QSFCT2X3245 PRELIMINARY Q 3.3 Volt CMOS 16-Bit Tranceiver QS74FCT2X3245 FEATURES/BENEFITS • • • • • Pin and function compatible to the QSFCT2X245 Available in 40-pin QVSOP Undershoot clamp diodes on all inputs Ground bounce controlled outputs Low power QCMOS: 0.07 |aW typ static


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    QSFCT2X3245 16-Bit QS74FCT2X3245 QSFCT2X245 40-pin FCT2X3245 2X3245 2X3245A MDSL-00062-00 PDF

    1k27a

    Abstract: K4242 k424 1K41 1h44 1K413 1H445
    Text: devices TOLL FREE NUMBER 800-777-3960 T - o i ' ù t silicon diodes c o n t’d M u dw n f u k C um it p » CMrfèfrt T iff • UK56 8 a 150 IX « » 1.0 1 M * IM m t » w K4M H\62A »M 2M 1.0 1.0 i.o 5 2 5 2 40 0) is 5 l:o 200 HO N 4U *M H « 100 1:3 100


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    J50W-Â 1k27a K4242 k424 1K41 1h44 1K413 1H445 PDF

    VSF203

    Abstract: selen-gleichrichter OA625 VSF200 selengleichrichter Dioden SY 250 GY123 GY112 VEB Keramische Werke GC301
    Text: d U 3 iu d |d n D g - J 3 i;d |q |D |_ | Dioden G erm anium dio den Type Durdilaßsponnung U f [Y ] Durchlaß­ strom If [mA] SperrSpannung Sperrstrom Ir [; xA] U r [V] max. zuläss. Sperr­ spannung URmax [V] max. zuläss. DurchlaßStrom Bau­ Verwendungszweck


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    RC266

    Abstract: RS -12V SDS RELAY RSL -12V SDS RELAY MD127 RS -24V SDS RELAY txal HB 541 RELAY PCB DPDT 4c sds relays TXAL 386 B
    Text: RC288ACÌ and RC288ACL * Rockwell RC288ACi and RC288ACL Integrated V.34 Data/V.17 Fax/Voice Modem Device Set Family INTRODUCTION FEATURES The Rockwell RC288ACi and R C288A CL integrated modem device set families support ultra high speed data and high speed fax operation in the US or world-wide over


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    RC288ACÃ RC288ACL RC288ACL 42/MNP Adaptive08TYP GP00-D264-11/29/93 -128-Pin RC266 RS -12V SDS RELAY RSL -12V SDS RELAY MD127 RS -24V SDS RELAY txal HB 541 RELAY PCB DPDT 4c sds relays TXAL 386 B PDF

    Untitled

    Abstract: No abstract text available
    Text: QuickSwitch Products Q u a l it y Semiconductor, I nc. q s 34x s t 257 High-Speed CMOS SynChroSwitCh 32:16 MUX/DemUX With Active Terminators in f o ardmva ™ n FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • Bidirectional signal flow


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    SynChroSwitChTM32 80-pin MDSL-00214-00 PDF

    RB040-40T

    Abstract: Schaffner load dump generator rb040 RB04
    Text: SCS-THOMSON iije r a « ® Application Specific Discretes A.S.D. R B 0 4 0 -40T REVERSED-BATTERY AND OVERVOLTAGE PROTECTION FEATURES . PROTECTION AGAINST”LOAD DUMP” EFFECT • DIODE TO GUARD AGAINST BATTERY REVERSAL . MONOLITHIC STRUCTURE FOR GREATER


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    D217 OPTO

    Abstract: MOCD217 opto D217
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Channel Sm all Outline O ptoisolators MOCD217 Transistor Output Low Input Current [CTR* 100% Min] The MOCD217 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a


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    MOCD217 RS481A MOCD217 TA-25 D217 OPTO opto D217 PDF

    Untitled

    Abstract: No abstract text available
    Text: LT1634 TECHNOLOGY Micropower Precision Shunt Voltage Reference mmwms D C S C R IP T IO n • initial Voltage Accuracy: 0.05% ■ Low Operating Current: 10uA ■ Low Drift: 10ppm/°C Max The LT 1634 is a micropower, precision, shunt voltage reference. The bandgap reference uses trimmed precision


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    LT1634 10ppm/Â LT1634 LTC1440 LT1460 OT-23 LT1495 PDF

    Untitled

    Abstract: No abstract text available
    Text: RC144ATÌ and RC144ATL * Rockwell RC144ATÌ and RC144ATL Integrated High Speed Data/Fax/Voice Modem Device Set INTRODUCTION FEATURES The Rockwell RC144ATi and RC144ATL device sets are low cost, integrated 14400 bps data and fax modems with options that support voice and world-wide operation.


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    RC144ATÃ RC144ATL RC144ATi RC144ATL RC144ATi/ATL) PDF

    TLP559

    Abstract: E67349
    Text: TO SHIBA TLP559 IGM TOSHIBA PHOTOCOUPLER G a A iA s IRED + PHOTO-IC T L P 5 5 9 ( I G M) Unit in mm TRANSISTOR INVERTOR INVERTER FOR AIR CONDITIONER LINE RECEIVER IPM INTERFACES The TOSHIBA TLP559 (IGM) consists of a G aA M s high-output light emitting diode and a high speed detector of one chip photo diodetransistor.


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    TLP559 TLP55 TLP559 200pF, E67349 PDF

    Untitled

    Abstract: No abstract text available
    Text: UG1A THRU UG1D MINIATURE ULTRAFAST PLASTIC RECTIFIER Voltage - 50 to 200 Volts C u rre n t - 1.0 Amperes FEATURES Ideally suited for use in very high frequency switch­ ing power supplies, inverters and as free wheeling diodes Plastic package has Underwriters Laboratories


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    D0-204AL, PDF