50N05
Abstract: 60N05 TO-254AA OM50N05SA OM50N05ST OM50N06SA OM50N06ST OM60N05SA OM60N06SA TO254-AA
Text: OM60N06SA OM60N05SA OM50N06ST OM50N06SA OM50N05SA OM50N05ST LOW VOLTAGE, LOW RDS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low RDS(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages
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OM60N06SA
OM60N05SA
OM50N06ST
OM50N06SA
OM50N05SA
OM50N05ST
O-257
O-254
MIL-S-19500,
50N05
60N05
TO-254AA
OM50N05ST
OM50N06ST
TO254-AA
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50N05
Abstract: OM60N06SA OM50N05SA OM50N05ST OM50N06SA OM50N06ST OM60N05SA
Text: OM60N06SA OM60N05SA OM50N06ST OM50N06SA OM50N05SA OM50N05ST LOW VOLTAGE, LOW RDS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low RDS(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages
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OM60N06SA
OM60N05SA
OM50N06ST
OM50N06SA
OM50N05SA
OM50N05ST
O-257
O-254
MIL-S-19500,
50N05
OM50N05ST
OM50N06ST
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50N05E
Abstract: 1N5325 optocoupler H-BRIDGE IC 555 control motor brushless MOC1000 50N05 MTP50N05E mpm3002 motorola an1078 MTP40N06M
Text: Order this document by AN1078/D MOTOROLA m SEMICONDUCTOR APPLICATION NOTE f A N 1078 REV. 1 N ew Com ponents S im p lify Brush DC M o to r Drives By Warren Schultz Motorola Discrete Applications A variety of new com ponents are making brush motor drive design easier. One of these com ponents is a brushless motor control IC that is easily set up to drive brush
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AN1078/D
AN1078
69T-L
50N05E
1N5325
optocoupler H-BRIDGE
IC 555 control motor brushless
MOC1000
50N05
MTP50N05E
mpm3002
motorola an1078
MTP40N06M
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IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
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VP1204N
TP8P08
5001D
VP1206N
1208N
5002D
1209N
VP1209N
IRFD1Z3 equivalent
8N60 equivalent
TP8N20
TP8N10
siemens semiconductor manual
What is comparable with IRF 3205
2N6823
irf8408
MTM5N90 designers datasheet
smps cook circuit
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20N15
Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.
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50n05
Abstract: 150N06 SSW50N05 SSW50N06 SSI50N06 150N0 SSI50N05 of 50N05
Text: N-CHANNEL POWER MOSFETS SSW50N06/05 SSI50N06/05 FEATURES D*-PAK • Lower Rds<on • Improved Inductive Ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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SSW50N06/05
SSI50N06/05
SSW50N06/150N06
SSW50N06/I50N05
SSW50N06/50N05
SSI50N06/50N05
SSW50N06
SSI50N06
SSW50N05
SSI50N05
50n05
150N06
150N0
of 50N05
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RFG50N05
Abstract: HRX-50 TI0H RFP50N05
Text: £2 HARRIS 2-50 RFP50N05 RFG50N05 fciz N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs May 1992 P ackag e Features TO-220AB TOP VIEW • 50A, 50V • rDS(on) = 0.022ft uo DRAIN . (FLANGE) • UIS SOA Rating Curve (Single Pulse) • SOA is Power-Dissipation Limited
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RFP50N05
RFG50N05
022ft
RFG50N05
CAPGEP50N0CCF3
92CS-43040
an-7254
an-7260)
ins240b
HRX-50
TI0H
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50n05
Abstract: SMP50N05 SMP60N05 s0n06 smp60n06 60n05 SMP50N06 60N06 50n06 siliconix SMP50N06-18
Text: lêE I SILICONIX INC <MmW C rS • 8254735 0014173 7 ■ SMP60N06/05, SMP50N06/05 ilì c o n ix in c o rp o ra te d N-Channel Enhancement Mode Transistors TO-220AB TOP VIEW PRODUCT SUMMARY o PART NUMBER V BRJDSS SMP60N06 60 0.023 60 SMP60N05 50 0.023 60 SMP50N06
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25473S
GQ14T73
SMP60N06/05,
SMP50N06/05
SMP60N06
SMP60N05
SMP50N06
SMP50N05
O-220AB
60N06
50n05
s0n06
60n05
50n06
siliconix SMP50N06-18
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50n06
Abstract: No abstract text available
Text: OM60N06SA OM60N05SA OM50N06ST OM50N06SA QM50N05SA QM50N05ST LOW VOLTAGE, LOW RDS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low RDs(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages
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OM60N06SA
OM60N05SA
OM50N06ST
OM50N06SA
QM50N05SA
QM50N05ST
O-257
O-254
MIL-S-19500,
50n06
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50n05
Abstract: C181 VPS 12g 60N05 OM50N05SA OM50N05ST OM50N06SA OM50N06ST OM60N05SA OM60N06SA
Text: OM6ONO6SA OM60N05SA OM50N06ST OM50N06SA OM50N05SA OM50N05ST LOW VOLTAGE, LOW R DS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low RDs(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages
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OM60N06SA
OM60N05SA
OM50N06ST
OM50N06SA
QM50N05SA
OM50N05ST
O-257
O-254
MIL-S-19500,
50n05
C181
VPS 12g
60N05
OM50N05SA
OM50N05ST
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50n05
Abstract: LD55A
Text: OM6ONO6SA OM60N05SA OM50N06ST OM50N06SA OM50N05SA OM50N05ST LOW VOLTAGE, LOW R DS on POW ER M O SFETS IN H ERM ETIC ISO LATED PACKAGE 50V A n d 60V Ultra L o w R DS(0nl Pow er MOS FETs In TO-257 A nd TO-254 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages
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OM60N05SA
OM50N06ST
OM50N06SA
OM50N05SA
OM50N05ST
O-257
O-254
MIL-S-19500,
circuitry60N06SA
50n05
LD55A
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