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    ON SEMICONDUCTOR DATE CODE D2PAK Search Results

    ON SEMICONDUCTOR DATE CODE D2PAK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ON SEMICONDUCTOR DATE CODE D2PAK Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DIODE MARKING code GM

    Abstract: No abstract text available
    Text: DLA20IM800PC High Efficiency Standard Rectifier VRRM = 800 V I FAV = 20 A VF = 1.24 V Single Diode Part number DLA20IM800PC Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak ● Planar passivated chips ● Very low leakage current


    Original     		DLA20IM800PC O-263 sine180° 60747and 20121026a DIODE MARKING code GM PDF

    418B-04

    Abstract: 418B 98AS AYWW marking code IC 98ASB42761B 418B-03 marking code AYWW On semiconductor date Code d2pak
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K DATE 03 SEP 2008 SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04.


    Original     		418B-04 418B-01 418B-03 418B-04. 418B-04 418B 98AS AYWW marking code IC 98ASB42761B marking code AYWW On semiconductor date Code d2pak PDF

    D2Pak-5 Package

    Abstract: d2pak-5
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK−5 CASE 936AC−01 ISSUE A DATE 10 SEP 2009 A SCALE 1:1 E L1 B A SEATING PLANE 0.10 A E/2 M B A M NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD


    Original     		936AC-01 936AC D2Pak-5 Package d2pak-5 PDF

    936AB

    Abstract: d2pak-7 On semiconductor date Code d2pak
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK−7 SHORT LEAD CASE 936AB−01 ISSUE B DATE 08 SEP 2009 A 1 SCALE 1:1 E L1 B A 0.10 A E/2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD


    Original     		936AB-01 936AB 936AB d2pak-7 On semiconductor date Code d2pak PDF

    418af

    Abstract: marking codes 418AF
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK CASE 418AF-01 ISSUE A DATE 18 JUN 2007 SCALE 1:1 -TK OPTIONAL CHAMFER A TERMINAL 4 E U S B V H F 1 2 3 M J D 0.010 0.254 M T L P N G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.


    Original     		418AF-01 418AF 418af marking codes 418AF PDF

    418AB

    Abstract: 418AB-01
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK−3 CASE 418AB−01 ISSUE A DATE 16 SEP 2009 A SCALE 1:1 B A E L1 SEATING PLANE 0.10 A B A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD


    Original     		418AB-01 418AB 418AB 418AB-01 PDF

    semiconductor WL 431

    Abstract: d2pak-7
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK−7 SHORT LEAD CASE 936AB−01 ISSUE O DATE 17 DEC 2003 SCALE 1:1 TERMINAL 8 A K NOTES: 1. DIMENSIONS AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. U E S B V M H L P G D N R DIM A


    Original     		936AB-01 936AB semiconductor WL 431 d2pak-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK 5 CASE 936A−02 ISSUE C DATE 21 SEP 2004 SCALE 1:1 −T− OPTIONAL CHAMFER A TERMINAL 6 E U S K B V H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. TAB CONTOUR OPTIONAL WITHIN DIMENSIONS A


    Original     		36A-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: DAA10EM1800PZ preliminary Avalanche Rectifier VRRM = 1800 V I FAV = 10 A VF = 1.14 V Single Diode Part number DAA10EM1800PZ Backside: anode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Avalanche rated ● Planar passivated chips


    Original     		DAA10EM1800PZ O-263 60747and 20131108a PDF

    Untitled

    Abstract: No abstract text available
    Text: DAA10EM1800PZ preliminary Avalanche Rectifier VRRM = 1800 V I FAV = 10 A VF = 1.14 V Single Diode Part number DAA10EM1800PZ Backside: anode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Avalanche rated ● Planar passivated chips


    Original     		DAA10EM1800PZ O-263 60747and 20131108a PDF

    Untitled

    Abstract: No abstract text available
    Text: DSA30C45PC preliminary Schottky Diode Gen ² VRRM = 45 V I FAV = 2x 15 A VF = 0.63 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA30C45PC Backside: cathode 1 2/4 3 Features / Advantages: Applications: Package: TO-263 D2Pak


    Original     		DSA30C45PC O-263 60747and 20131030a PDF

    Untitled

    Abstract: No abstract text available
    Text: DSA30C45PC preliminary Schottky Diode Gen ² VRRM = 45 V I FAV = 2x 15 A VF = 0.63 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA30C45PC Backside: cathode 1 2/4 3 Features / Advantages: Applications: Package: TO-263 D2Pak


    Original     		DSA30C45PC O-263 60747and 20130724a PDF

    Untitled

    Abstract: No abstract text available
    Text: DMA10P1600PZ Standard Rectifier VRRM = 2x 1600 V I FAV = 10 A VF = 1.21 V Phase leg Part number DMA10P1600PZ Backside: anode/cathode 1 4 3 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips ● Very low leakage current


    Original     		DMA10P1600PZ O-263 60747and 20130108b PDF

    DNA30EM2200PZ

    Abstract: DNA30E2200PZ
    Text: DNA30EM2200PZ High Voltage Standard Rectifier VRRM = 2200 V I FAV = 30 A VF = 1.24 V Single Diode Part number DNA30EM2200PZ Backside: anode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips ● Very low leakage current


    Original     		DNA30EM2200PZ O-263 60747a 60747and 20130325a DNA30EM2200PZ DNA30E2200PZ PDF

    DNA30E2200PZ

    Abstract: DNA30EM2200PZ
    Text: DNA30E2200PZ High Voltage Standard Rectifier VRRM = 2200 V I FAV = 30 A VF = 1.24 V Single Diode Part number DNA30E2200PZ Backside: anode 1 3 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips ● Very low leakage current


    Original     		DNA30E2200PZ O-263 60747and 20130325a DNA30E2200PZ DNA30EM2200PZ PDF

    Untitled

    Abstract: No abstract text available
    Text: DMA10P1600PZ Standard Rectifier VRRM = 2x 1600 V I FAV = 10 A VF = 1.21 V Phase leg Part number DMA10P1600PZ Backside: anode/cathode 1 4 3 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips ● Very low leakage current


    Original     		DMA10P1600PZ O-263 60747and 20130108b PDF

    Untitled

    Abstract: No abstract text available
    Text: DSEP12-12AZ HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12AZ Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips


    Original     		DSEP12-12AZ O-263 60747and 20131029a PDF

    Untitled

    Abstract: No abstract text available
    Text: DAA10P1800PZ Avalanche Rectifier VRRM = 2x 1800 V I FAV = 10 A VF = 1.21 V Phase leg Part number DAA10P1800PZ Backside: anode 1 4 3 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Avalanche rated ● Planar passivated chips ● Very low leakage current


    Original     		DAA10P1800PZ O-263 60747and 20131114a PDF

    DNA30E2200PZ

    Abstract: DNA30EM2200PZ
    Text: DNA30E2200PZ High Voltage Standard Rectifier VRRM = 2200 V I FAV = 30 A VF = 1.24 V Single Diode Part number DNA30E2200PZ Backside: anode 1 3 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips ● Very low leakage current


    Original     		DNA30E2200PZ O-263 60747and 20130325a DNA30E2200PZ DNA30EM2200PZ PDF

    Untitled

    Abstract: No abstract text available
    Text: DSEP12-12AZ HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12AZ Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips


    Original     		DSEP12-12AZ O-263 60747and 20131029a PDF

    DNA30EM2200PZ

    Abstract: No abstract text available
    Text: DNA30EM2200PZ High Voltage Standard Rectifier VRRM = 2200 V I FAV = 30 A VF = 1.24 V Single Diode Part number DNA30EM2200PZ Backside: anode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips ● Very low leakage current


    Original     		DNA30EM2200PZ O-263 60747a 60747and 20130325a DNA30EM2200PZ PDF

    Untitled

    Abstract: No abstract text available
    Text: DAA10P1800PZ Avalanche Rectifier VRRM = 2x 1800 V I FAV = 10 A VF = 1.21 V Phase leg Part number DAA10P1800PZ Backside: anode 1 4 3 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Avalanche rated ● Planar passivated chips ● Very low leakage current


    Original     		DAA10P1800PZ O-263 60747and 20131114a PDF

    Untitled

    Abstract: No abstract text available
    Text: DMA10P1600PZ Standard Rectifier VRRM = 2x 1600 V I FAV = 10 A VF = 1.21 V Phase leg Part number DMA10P1600PZ Backside: anode/cathode 1 4 3 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips ● Very low leakage current


    Original     		DMA10P1600PZ O-263 60747and 20130108b PDF

    Untitled

    Abstract: No abstract text available
    Text: DSP8-12AS Standard Rectifier VRRM = 2x 1200 V I FAV = 8A VF = 1.08 V Phase leg Part number DSP8-12AS Backside: anode/cathode 1 2/4 3 Features / Advantages: Applications: Package: TO-263 D2Pak ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop


    Original     		DSP8-12AS O-263 60747and 20130107b PDF