edfa pump laser
Abstract: No abstract text available
Text: SD 048-11-21-000 Pump Laser Monitor Photodiode The SD 0480-11-21-000 Pump Laser Monitor Photodiode was designed to monitor the optical power of short wavelength 500 to 1000 nm semiconductor lasers, such as the 980 nm EDFA pump laser. These OEM detectors are supplied as bare die soldered to a ceramic block, which facilitates
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A New Detector for IR LED Light
Abstract: Silicon Detector OSD5-5T GaAlAs detector IR photodiode 880 nm 850 nm LED RG830 Longwave laser ingaas LED IR photodiode 95w
Text: A NEW DETECTOR FOR IRLED LIGHT As reprinted from SENSORS Magazine, December 1996 Issue A New Detector for IR LED Light A new GaAIAs processing technique has led to a wavelength-specific detector for 880 nm light that requires no signal modulation or optical filtering to eliminate
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HSDL-4400
Abstract: HSDL-4420 HSDL-54XX 9018E HSDL4420 HSDL-44XX HSDL-5400 HSDL-5420 54XX
Text: H High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package HSDL-44XX IR Emitter Series HSDL-54XX IR Detector Series Technical Data Features Description • Subminiature Flat Top and Dome Package Size – 2x2 mm • IR Emitter 875 nm TS AlGaAs
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HSDL-44XX
HSDL-54XX
HSDL-4400
HSDL-5400.
HSDL-5420.
EN60825-1.
I-008,
I-009,
I-015
HSDL-4420
9018E
HSDL4420
HSDL-5400
HSDL-5420
54XX
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HSDL-4420#011
Abstract: No abstract text available
Text: High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package HSDL-44xx IR Emitter Series HSDL-54xx IR Detector Series Technical Data Features Description • Subminiature Flat Top and Dome Package Size – 2x2 mm • IR Emitter 875 nm TS AlGaAs
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HSDL-44xx
HSDL-54xx
HSDL-4400
HSDL-5420.
EN60825-1.
I-008
5968-0955E
5968-5115E
HSDL-4420#011
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9018E
Abstract: EN60825-1 HSDL-4400 HSDL4420 HSDL-4420 HSDL-44XX HSDL-5400 HSDL-5420 HSDL-54XX Hewlett-Packard LED transparent substrate 1996
Text: 1 H High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package HSDL-44XX IR Emitter Series HSDL-54XX IR Detector Series Technical Data Features Description • Subminiature Flat Top and Dome Package Size – 2x2 mm • IR Emitter 875 nm TS AlGaAs
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HSDL-44XX
HSDL-54XX
HSDL-4400
EN60825-1.
I-008
5964-9018E
9018E
EN60825-1
HSDL4420
HSDL-4420
HSDL-5400
HSDL-5420
Hewlett-Packard LED transparent substrate 1996
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HSDL4420
Abstract: HSDL-4400 HSDL-4420
Text: 1 High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package HSDL-44xx IR Emitter Series HSDL-54xx IR Detector Series Technical Data Features Description • Subminiature Flat Top and Dome Package Size – 2x2 mm • IR Emitter 875 nm TS AlGaAs
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HSDL-44xx
HSDL-54xx
HSDL-4400
HSDL-5400
HSDL-5420.
EN60825-1.
I-008
5968-0955E
5968-5115E
HSDL4420
HSDL-4420
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InGaAs APD photodiode 1550
Abstract: InGaas PIN photodiode, 1550 inGaAs photodiode 1550 InGaAs apd photodiode InGaAs pin
Text: PDINBU 45 UM DETECTORS 1100nm to 1650 nm InGaAs PIN Photodiodes PDINBU045G00A-0-0-01 PD-LD offers InGaAs PIN photodiodes with a 45 micron diameter active area that are ideal for use in Channel Monitoring Applications. The detectors exhibit their intrinsically high optical responsivity
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1100nm
PDINBU045G00A-0-0-01
InGaAs APD photodiode 1550
InGaas PIN photodiode, 1550
inGaAs photodiode 1550
InGaAs apd photodiode
InGaAs pin
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HSDL-44XX
Abstract: 44xx
Text: High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package HSDL-44xx IR Emitter Series HSDL-54xx IR Detector Series Technical Data Features Description • Subminiature Flat Top and Dome Package Size – 2x2 mm • IR Emitter 875 nm TS AlGaAs
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HSDL-44xx
HSDL-54xx
HSDL-4400
HSDL-5400
HSDL-5420.
5980-2417E
5988-2425EN
44xx
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HSDL-5400
Abstract: HSDL5420 HSDL-5420 HSDL5400
Text: High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package HSDL-44xx IR Emitter Series HSDL-54xx IR Detector Series Technical Data Features Description • Subminiature Flat Top and Dome Package Size – 2x2 mm • IR Emitter 875 nm TS AlGaAs
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HSDL-44xx
HSDL-54xx
HSDL-4400
HSDL-5400
HSDL-5420.
5968-5115E
5980-2417E
HSDL5420
HSDL-5420
HSDL5400
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HSDL-5400
Abstract: EN60825-1 HSDL-4400 HSDL4420 HSDL-4420 HSDL-44XX HSDL-5420 diode blue stripe
Text: High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package HSDL-44xx IR Emitter Series HSDL-54xx IR Detector Series Technical Data Features Description • Subminiature Flat Top and Dome Package Size – 2x2 mm • IR Emitter 875 nm TS AlGaAs
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HSDL-44xx
HSDL-54xx
HSDL-4400
5988-2425EN
5988-5284EN
HSDL-5400
EN60825-1
HSDL4420
HSDL-4420
HSDL-5420
diode blue stripe
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BaySpec
Abstract: wdm Mux edfa optical gain 20 dB 2X512
Text: Enlightening Fiber Optic Networks IntelliGuardTM C and L-Band Optical Channel Performance Monitors Parameters Unit Specifications nm 1528 - 1570 C-Band and 1570 - 1605 (L-Band) GHz 160 50 pm dB ± 15 60 Channel Input Power Range Channel Power Accuracy Channel Power Repeatability
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2x512-element
BaySpec
wdm Mux
edfa optical gain 20 dB
2X512
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Untitled
Abstract: No abstract text available
Text: DATASHEET Photon Detection C30902 and C30921 Series High-speed solid state detectors for low light level applications Key Features • High quantum efficiency: 77% typical at 830 nm C30902SH and C30921SH can be operated in Geiger mode C30902EH/SH-2 version with
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C30902
C30921
C30902SH
C30921SH
C30902EH/SH-2
C30902BH
C30902EH
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SAE230VS
Abstract: No abstract text available
Text: Detectors Silicon Avalanche Photodiode SAE-Series Red-Enhanced Description The SAE230VS and SAE500VS epitaxial avalanche photodiodes are general purpose APD with high responsivity and extremely fast rise and fall times through out the 400 to 1000 nm wavelength range. The peak responsivity at 650 nm is ideally suited to
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SAE230VS
SAE500VS
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Untitled
Abstract: No abstract text available
Text: Detectors Silicon Avalanche Photodiode SAE-Series NIR-Enhanced Description The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range. The responsivity is optimised for 900 nm for use
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SAE230NS
SAE500NS
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PIN-5DI
Abstract: PIN-020A PIN-3CDI UDT Pin-040A PIN-10DI PIN-6DI PIN-13DI FIL-3C diodes 10di 13DI
Text: PHOTOCONDUCTIVE SERIES PLANAR DIFFUSED SILICON PHOTODIODES APPLICATIONS • • • • • • The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications, including such
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SF107
Abstract: No abstract text available
Text: Opto Products Semelab Opto-Electronic Components, Modules and Solutions OPTO CHIP DESIGN WAFER PROCESSING A Proven Record The Semelab Group has been a leading provider of high-end, innovative electronic solutions since 1974. A diverse, worldwide customer base benefits from our design innovation, our
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FM36235
M1040
1360/M
VQC-03-003050
VQC-03-003049
U3158
2M8S02
A1006
SF107
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gold detectors circuit
Abstract: PDF PIN PHOTO DIODE DESCRIPTION detector alcohol OP58TS The Optical Devices
Text: Spec. No. : ODT-W010-82 0 Issued Date : 2004.09.20 SPECIFICATION MODEL NAME : Photo Diode MODEL NO. : OP58TS Prepared by : Checked by : Approved by : ODTech Head office : 814, Youngam-ri, Bongdong-eup, Wanju-gun, Jeonbok-do, Korea Tel : 82-63-263-7626, Fax : 82-63-262-7624
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ODT-W010-82
OP58TS
OP58TS
gold detectors circuit
PDF PIN PHOTO DIODE DESCRIPTION
detector alcohol
The Optical Devices
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EPITAXX
Abstract: EPITAXX ETX 300 ETX500T ETX3000T5 InGaAs Epitaxx linear 3000T5 ETX2000T5 InGaAs 1550 photodiode transimpedance amplifier EPITAXX ETX 75 inGaAs photodiode 1550
Text: =ss ETX 5001V ETX 1000T ETX 2000T5, ETX 3000T5 ERl iAAA Large Area InGaAs Photodiodes Features • High responsivity at 1300, 1550, and 850 nm. ■ Low dark current for high accuracy ■ High shunt resistance for low noise ■ Linear over wide range of input optical
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2000T5,
3000T5
500nm,
1000p
33b0MDb
EPITAXX
EPITAXX ETX 300
ETX500T
ETX3000T5
InGaAs Epitaxx linear
3000T5
ETX2000T5
InGaAs 1550 photodiode transimpedance amplifier
EPITAXX ETX 75
inGaAs photodiode 1550
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ETX2000T5
Abstract: ETX3000T5 ETX500T EPITAXX ETX 300 InGaas PIN photodiode, 1550 sensitivity noise diode LARGE SURFACE AREA PHOTODIODE photodiode high responsivity high shunt resistance 1550 epitaxx InGaAs Epitaxx
Text: E TX 500T, ET X 100 0 T ERi iMAA ETX 2 0 0 0 T 5 , ET X 300 0 T5 m m « Large Area InGaAs Photodiodes Features • Hiqh responsivity at 1300, 1550, and 850 nm. ■ Low dark current for high accuracy ■ High shunt resistance for low noise ■ Linear over wide range of input optical
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1000T
2000T5,
3000T5
33bOMDb
0DD0375
ETX2000T5
ETX3000T5
ETX500T
EPITAXX ETX 300
InGaas PIN photodiode, 1550 sensitivity
noise diode
LARGE SURFACE AREA PHOTODIODE
photodiode high responsivity high shunt resistance 1550
epitaxx
InGaAs Epitaxx
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J16D
Abstract: J161 germanium diode equivalent GE PHOTODIODE J16-18A-R01M-HS J16-5SP-R03M-HS 103 SRM
Text: E G I 8c G JUDSON 3TE D • 30BGb05 000DE13 4 *JUD ^ T -V /-V / J IO Series Germanium Detector Operating Notes General Responsivity Operating Circuit J16 Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range.
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30BGb05
000DE13
J16TE2
11-mission.
3030L
000D21L,
J16D
J161
germanium diode equivalent
GE PHOTODIODE
J16-18A-R01M-HS
J16-5SP-R03M-HS
103 SRM
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J16-5SP-R02M-SC
Abstract: J16-8SP-R05M GE PHOTODIODE J16-18A-R01M-SC J16P1R10M J16-5SP-R03M-HS J16-5SP-R03M-SC judson germanium photodiode J16-8SP-R05M-SC J16-18A-R01M
Text: E G 8c G JUDSON BTE J> J 16 Series 3CI30bD5 D0DDS13 JUD 4 T - H t - H l Germanium Detector Operating Notes General Responsivity Operating Circuit J16 Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range.
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3CI30bD5
D0DDS13
J16TE2
1550nm.
3G30L
000021L.
J16-5SP-R02M-SC
J16-8SP-R05M
GE PHOTODIODE
J16-18A-R01M-SC
J16P1R10M
J16-5SP-R03M-HS
J16-5SP-R03M-SC
judson germanium photodiode
J16-8SP-R05M-SC
J16-18A-R01M
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SDL-4420
Abstract: No abstract text available
Text: Thp\ mHEM HEWLETT PACKARD High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package Technical Data Features • Subm iniature Flat Top and D om e Package Size - 2x2 iran • IR E m itter 875 nm TS AIGaAs Intensity -1 7 mW/sr Speed - 40 ns
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HSDL-44xx
HSDL-54xx
HSDL-4400
EN60825-1.
5968-0955E
5968-5115E
SDL-4420
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bpx65rt
Abstract: centronic osd100 6 deep uv photodiode, GaP Centronic osd 15 AX65-RF X65EB blue enhanced photodiode array MD25 Silicon Photodetector Centronic osd 50 1064nm photodiode
Text: RESPO N SIVITY A/W Photodiode Response Curves 200 300 400 500 600 700 800 900 1000 1100 1200 W AVELENG TH(nm ) CEnmomc ] 2 Tel: 01689 842121 Fax: 01689 845117 Making the Right Choice (•■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■a
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900nm
BPX65
AX65R2F
BPX65RT
X65EB
centronic osd100 6
deep uv photodiode, GaP
Centronic osd 15
AX65-RF
blue enhanced photodiode array
MD25 Silicon Photodetector
Centronic osd 50
1064nm photodiode
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ON SEMICONDUCTOR 613
Abstract: top marking 293 1A466
Text: PRODUCT INFORMATION 1A466 Datacom, General Purpose O p t ic a l a n d E le c t r ic a l C h a r a c t e r is t ic s 500 /p=30mA Note 1 700 |j W 50 deg (3 d B e l) /c 200 MHz Peak Wavelength XP 640 650 660 II o nm II Bandwidth Full W idth H alf M axim um I
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1A466
30mAte
1-800-96MITEL
ON SEMICONDUCTOR 613
top marking 293
1A466
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