Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    OVERLAY Search Results

    SF Impression Pixel

    OVERLAY Price and Stock

    Visual Communications Company CTHOVERLAYALARM

    CAP TOUCH OVERLAY ALARM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CTHOVERLAYALARM Bulk 100 1
    • 1 $1.66
    • 10 $1.073
    • 100 $1.66
    • 1000 $0.6625
    • 10000 $0.6625
    Buy Now
    Mouser Electronics CTHOVERLAYALARM
    • 1 $1.66
    • 10 $1.08
    • 100 $0.771
    • 1000 $0.662
    • 10000 $0.662
    Get Quote
    Newark CTHOVERLAYALARM Bulk 89 1
    • 1 $0.175
    • 10 $0.175
    • 100 $0.175
    • 1000 $0.175
    • 10000 $0.175
    Buy Now
    RS CTHOVERLAYALARM Bulk 12 Weeks 100
    • 1 -
    • 10 -
    • 100 $0.79
    • 1000 $0.79
    • 10000 $0.79
    Get Quote

    Visual Communications Company CTHOVERLAYARROW

    CAP TOUCH OVERLAY ARROW
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CTHOVERLAYARROW Bulk 100 1
    • 1 $1.92
    • 10 $1.232
    • 100 $1.92
    • 1000 $0.698
    • 10000 $0.60416
    Buy Now
    Mouser Electronics CTHOVERLAYARROW 97
    • 1 $1.92
    • 10 $1.24
    • 100 $0.879
    • 1000 $0.687
    • 10000 $0.604
    Buy Now
    Newark CTHOVERLAYARROW Bulk 90 1
    • 1 $0.175
    • 10 $0.175
    • 100 $0.175
    • 1000 $0.175
    • 10000 $0.175
    Buy Now
    RS CTHOVERLAYARROW Bulk 12 Weeks 100
    • 1 -
    • 10 -
    • 100 $0.79
    • 1000 $0.79
    • 10000 $0.79
    Get Quote

    Visual Communications Company CTHOVERLAYONOFF

    CAP TOUCH OVERLAY ON OFF (POWER)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CTHOVERLAYONOFF Bulk 21 1
    • 1 $1.85
    • 10 $1.231
    • 100 $1.85
    • 1000 $0.73604
    • 10000 $0.66913
    Buy Now
    Mouser Electronics CTHOVERLAYONOFF
    • 1 $1.85
    • 10 $1.24
    • 100 $0.947
    • 1000 $0.731
    • 10000 $0.669
    Get Quote
    Newark CTHOVERLAYONOFF Bulk 86 1
    • 1 $0.175
    • 10 $0.175
    • 100 $0.175
    • 1000 $0.175
    • 10000 $0.175
    Buy Now
    RS CTHOVERLAYONOFF Bulk 12 Weeks 100
    • 1 -
    • 10 -
    • 100 $0.79
    • 1000 $0.79
    • 10000 $0.79
    Get Quote

    3M Interconnect OVERLAY-KEYPAD-REC

    DYNATELLOCATOR OVERLAY KEYPAD SE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey OVERLAY-KEYPAD-REC Bulk 1
    • 1 $414.25
    • 10 $414.25
    • 100 $414.25
    • 1000 $414.25
    • 10000 $414.25
    Buy Now

    3M Interconnect OVERLAY KEYPAD-REC

    LOCATOR OVERLAY KEYPAD SERIES 2250 RECEI - Bulk (Alt: 7100296626)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas OVERLAY KEYPAD-REC Bulk 4 Weeks 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    OVERLAY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MBRA340T3G

    Abstract: DIODE marking code A34
    Text: MBRA340T3G, NRVBA340T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRA340T3G, NRVBA340T3G MBRA340T3/D MBRA340T3G DIODE marking code A34

    MBRS360T3G

    Abstract: NRVBS360T3G NRVBS360BT3G MBRS360BT3G MBRS360BT3
    Text: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G MBRS360T3/D MBRS360T3G NRVBS360T3G MBRS360BT3G MBRS360BT3

    marking code onsemi Diode B34

    Abstract: b34 DIODE schottky SMC 403-03 MBRS340T3 b34 diode diode marking b34 marking B34 diode SCHOTTKY DIODE ON SEMICONDUCTOR B34 DIODE B34 diode schottky B34
    Text: MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS320T3, MBRS330T3, MBRS340T3 MBRS340T3/D marking code onsemi Diode B34 b34 DIODE schottky SMC 403-03 MBRS340T3 b34 diode diode marking b34 marking B34 diode SCHOTTKY DIODE ON SEMICONDUCTOR B34 DIODE B34 diode schottky B34

    Untitled

    Abstract: No abstract text available
    Text: MURS320T3, MURS340T3, MURS360T3 Preferred Devices Surface Mount Ultrafast Power Rectifiers . . . employing state-of-the-art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection


    Original
    PDF MURS320T3, MURS340T3, MURS360T3

    STY140NS10

    Abstract: Max247TM MAX247
    Text: STY140NS10 N-CHANNEL 100V - 0.009 Ω - 140A MAX247 MESH OVERLAY™ POWER MOSFET TYPE STY140NS10 • ■ ■ VDSS RDS on ID 100V <0.011Ω 140A TYPICAL RDS(on) = 0.009Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION Using the latest high voltage MESH OVERLAY


    Original
    PDF STY140NS10 MAX247TM STY140NS10 Max247TM MAX247

    IRF634

    Abstract: IRF634FP
    Text: IRF634 IRF634FP N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF634 IRF634FP • ■ ■ VDSS RDS on ID 250 V 250 V < 0.45 Ω < 0.45 Ω 8A 8A TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3


    Original
    PDF IRF634 IRF634FP O-220/TO-220FP O-220 O-220FP IRF634 IRF634FP

    M259

    Abstract: M-259 AM1214-250 XAM1214-250
    Text: AM1214-250 RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS TARGET DATA • REFRACTORY /GOLD METALLIZATION • EMITTER SITE BALLASTING • LOW RF THERMAL RESISTANCE • INPUT/OUTPUT MATCHING • OVERLAY GEOMETRY • METAL/CERAMIC HERMETIC PACKAGE • POUT = 300 W MIN. WITH 8.0 dB GAIN


    Original
    PDF AM1214-250 XAM1214-250 AM1214-250 M259 M-259 XAM1214-250

    AM80912-005

    Abstract: capacitor feed-through SGS-THOMSON RF POWER
    Text: AM80912-005 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 6.0 W MIN. WITH 9.3 dB GAIN


    Original
    PDF AM80912-005 AM80912-005 capacitor feed-through SGS-THOMSON RF POWER

    STB40NS15

    Abstract: No abstract text available
    Text: STB40NS15 N-CHANNEL 150V - 0.042Ω - 40A D2PAK MESH OVERLAY MOSFET PRELIMINARY DATA • ■ ■ ■ TYPE VDSS RDS on ID STB40NS15 150 V <0.052Ω 40A TYPICAL RDS(on) = 0.042Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED


    Original
    PDF STB40NS15 STB40NS15

    STB16NS25

    Abstract: No abstract text available
    Text: STB16NS25 N-CHANNEL 250V - 0.23Ω - 16A D2PAK MESH OVERLAY MOSFET TYPE VDSS RDS on ID STB16NS25 250 V < 0.28 Ω 16 A • ■ ■ TYPICAL RDS(on) = 0.23 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 1 DESCRIPTION Using the latest high voltage MESH OVERLAY


    Original
    PDF STB16NS25 STB16NS25

    IRF630M

    Abstract: IRF630MFP
    Text: IRF630M IRF630MFP N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE • ■ ■ ■ VDSS RDS on ID IRF630M 200 V < 0.40 Ω 9A IRF630FPM 200 V < 0.40 Ω 9A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original
    PDF IRF630M IRF630MFP O-220/TO-220FP IRF630FPM O-220 O-220 O-220FP IRF630M IRF630MFP

    MK1573-02

    Abstract: No abstract text available
    Text: ICROCLOCK GenClock MK1573-02 HSYNC to Video Clock Description Features The MK1573 GenClock™ provides genlock timing for video overlay systems. The device accepts the horizontal sync HSYNC signal as the input reference clock, and generates a frequencylocked high speed output. Stored in the device are


    Original
    PDF MK1573-02 MK1573 27MHz 295-9800tel· 295-9818fax MDS1573-02B MK1573-02

    ushio

    Abstract: Lithography Ushio Taiwan LS365 Ushio America 5440
    Text: 【UX4-3Di Product Data Sheet】 Comparison between lithography methods available for HVM of 3D LSIs UX4-3Di FFPL 200 Specifications Resolution: Wavelength: Overlay Accuracy: Throughput: Wafer Size: Wafer Transfer Method: 3 µm L/S 365 nm Top ±1 µm, bottom ±1 µm


    Original
    PDF CA90630 200-mm ushio Lithography Ushio Taiwan LS365 Ushio America 5440

    Rayex elec

    Abstract: rayex E126167 2PDT RS-12L RS-12L Rayex elec 2PDT switch RS-12L rayex l
    Text: RS SERIES RAYEX ELEC. FEATURES 2 Form C 2PDT gold overlay silver-palladium cross-bar contacts High Sensitive type (L - label) For high density PC Board mounting Using at telecommunication, domestic appliances, office machine, audio equipment, remote control, etc


    Original
    PDF E126167 50/60Hz 30/min. Rayex elec rayex E126167 2PDT RS-12L RS-12L Rayex elec 2PDT switch RS-12L rayex l

    SST49LF020A

    Abstract: No abstract text available
    Text: 2 Mbit LPC Flash SST49LF020A SST49LF020A2Mb LPC Flash Data Sheet FEATURES: • LPC Interface Flash – SST49LF020A: 256K x8 2 Mbit • Conforms to Intel LPC Interface Specification 1.0 • Flexible Erase Capability – Uniform 4 KByte Sectors – Uniform 16 KByte overlay blocks


    Original
    PDF SST49LF020A SST49LF020A2Mb SST49LF020A: S71206-08-000 SST49LF020A

    P130NS04ZB

    Abstract: B130NS04ZB JESD97 STB130NS04ZB STB130NS04ZB-1 STB130NS04ZBT4 STP130NS04ZB STW130NS04ZB MOSFET IGSS 100uA STW13
    Text: STP130NS04ZB - STB130NS04ZB-1 STB130NS04ZB - STW130NS04ZB N-channel clamped - 7 mΩ - 80A TO-220/I2/D2PAK/TO-247 Fully protected mesh overlay MOSFET General features Type VDSS RDS on ID STP130NS04ZB clamped <9 mΩ 80A STB130NS04ZB clamped <9 mΩ 80A


    Original
    PDF STP130NS04ZB STB130NS04ZB-1 STB130NS04ZB STW130NS04ZB O-220/I2/D2PAK/TO-247 STP130NS04ZB STB130NS04ZB O-247 P130NS04ZB B130NS04ZB JESD97 STB130NS04ZB-1 STB130NS04ZBT4 STW130NS04ZB MOSFET IGSS 100uA STW13

    SD5000

    Abstract: M122 S10A015
    Text: SD5000 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . PRELIMINARY DATA GOLD METALLIZATION EMITTER SITE BALLASTING INTERNAL INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC PACKAGE COMMON EMITTER CONFIGURATION POUT = 1.5 W MIN. WITH 9.5 dB GAIN


    Original
    PDF SD5000 S10A015 SD5000 M122 S10A015

    IRF640

    Abstract: IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco
    Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original
    PDF IRF640 IRF640FP O-220/FP IRF640F O-220 IRF640 IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco

    AM83135-030

    Abstract: No abstract text available
    Text: AM83135-030 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN. WITH 5.5 dB GAIN


    Original
    PDF AM83135-030 AM83135-030 AM83135-30

    50w transistor

    Abstract: AM80814-025
    Text: AM80814-025 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 25 W MIN. WITH 7.0 dB GAIN


    Original
    PDF AM80814-025 AM80814-025 50w transistor

    S16A

    Abstract: S16A30 S16A60 S16A3
    Text: MOSPEC S16A30 thru S16A60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original
    PDF S16A30 S16A60 S16A30-S16A45 S16A50-S16A60 S16A S16A60 S16A3

    SR506

    Abstract: SR502 SR504 SR505
    Text: Bk MOSPEC SR502 thru SR506 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrie metal. These state-of-the-art geometry features epitaxia construction with oxide passivation and metal overlay contac


    OCR Scan
    PDF SR502 SR506 SR505 SR506 SR504 SR505

    SM18

    Abstract: sm17 SM19
    Text: ßk MOSPEC SM17 thru SM19 Suface Mount Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.


    OCR Scan
    PDF

    S10C100

    Abstract: S10C70 S10C80 S10C90
    Text: Ek MOSPEC S10C70 thru S10C100 Schottky Barrier Rectifiers S C H O T T K Y B A R R IE R R E C T IF IE R S Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.


    OCR Scan
    PDF S10C70 S10C100 S10C90, S10C100 S10C80 S10C90