VEC2605
Abstract: No abstract text available
Text: VEC2605 Ordering number : ENN8197 P-Channel and N-Channel Silicon MOSFET VEC2605 General-Purpose Switching Device Applications Features • • • • Best suited for DC/DC converters. The VEC2605 incorporates a P-channel MOSFET and an N-channel MOSFET that feature low ON-resistance
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VEC2605
ENN8197
VEC2605
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CMLM8205
Abstract: PB CMLM8205 mosfet 4812 marking 34 diode SCHOTTKY sot-563 MOSFET D1 P-Channel Enhancement MOSFET module 4812 mosfet "Schottky Diode" Schottky Diode power mosfet 500 A
Text: Product Brief CMLM8205 Multi Discrete Module 50V, 280mA, P-Channel MOSFET and 40V, 500mA Schottky Diode SOT-563 Typical Electrical Characteristic: Description: MOSFET: The CENTRAL SEMICONDUCTOR CMLM8205 is a Multi Discrete Module consisting of a single P-Channel Enhancement Mode MOSFET
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CMLM8205
280mA,
500mA
OT-563
CMLM8205
OT-563
100mA
21x9x9
27x9x17
20x18x5
PB CMLM8205
mosfet 4812
marking 34 diode SCHOTTKY
sot-563 MOSFET D1
P-Channel Enhancement MOSFET module
4812 mosfet
"Schottky Diode"
Schottky Diode
power mosfet 500 A
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ENN8206
Abstract: CPH5810 MCH3312
Text: CPH5810 Ordering number : ENN8206 CPH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS001)
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CPH5810
ENN8206
MCH3312)
SBS001)
ENN8206
CPH5810
MCH3312
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7382
Abstract: CPH5820 D2503 MCH3308 SBS006M
Text: Ordering number : ENN7382 CPH5820 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5820 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3308 and a Schottky Barrier Diode (SBS006M) 2171
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ENN7382
CPH5820
MCH3308)
SBS006M)
CPH5820]
7382
CPH5820
D2503
MCH3308
SBS006M
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN6980 CPH5804 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171
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ENN6980
CPH5804
MCH3312)
SBS006M)
CPH5804]
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TA-3176
Abstract: marking QB MCH3308 MCH5802 SBS006M
Text: Ordering number : ENN6961 MCH5802 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5802 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3308 and a Schottky Barrier Diode (SBS006M) 2195
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ENN6961
MCH5802
MCH3308)
SBS006M)
MCH5802]
TA-3176
marking QB
MCH3308
MCH5802
SBS006M
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MCH3312
Abstract: CPH5854 SB1003M3 A05166 marking YG
Text: CPH5854 Ordering number : ENA0516 SANYO Semiconductors DATA SHEET CPH5854 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type containing a P-Channel MOSFET MCH3312 and a Schottky Barrier Diode (SB1003M3),
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CPH5854
ENA0516
MCH3312)
SB1003M3)
A0516-6/6
MCH3312
CPH5854
SB1003M3
A05166
marking YG
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diode N1004
Abstract: CPH5822 MCH3312 N1004 SBS010M
Text: CPH5822 Ordering number : ENN7702A CPH5822 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS010M)
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CPH5822
ENN7702A
MCH3312)
SBS010M)
diode N1004
CPH5822
MCH3312
N1004
SBS010M
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Untitled
Abstract: No abstract text available
Text: SCH2811 Ordering number : ENA0440 SCH2811 Features • • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET and a Schottky barrier diode contained in one package
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ENA0440
SCH2811
A0440-6/6
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MCH3307
Abstract: SBS004 ENN8235 2171A
Text: CPH5838 Ordering number : ENN8235 CPH5838 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converters. Composite type with a P-Channel Sillicon MOSFET MCH3307 and a Schottky Barrier Diode (SBS004)
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CPH5838
ENN8235
MCH3307)
SBS004)
MCH3307
SBS004
ENN8235
2171A
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Untitled
Abstract: No abstract text available
Text: CPH5822 Ordering number : ENN7702 CPH5822 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General Purpose Switching Device Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS010M)
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ENN7702
CPH5822
MCH3312)
SBS010M)
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82306
Abstract: MCH3312 CPH5852 SB1003M3
Text: CPH5852 Ordering number : ENA0336 SANYO Semiconductors DATA SHEET CPH5852 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type containing a P-Channel MOSFET MCH3312 and a Schottky Barrier Diode (SB1003M3),
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CPH5852
ENA0336
MCH3312)
SB1003M3)
A0336-6/6
82306
MCH3312
CPH5852
SB1003M3
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CPH5821
Abstract: MCH3312 SBS004 marking qx
Text: CPH5821 Ordering number : ENN7701 CPH5821 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS004)
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CPH5821
ENN7701
MCH3312)
SBS004)
CPH5821
MCH3312
SBS004
marking qx
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SS1001
Abstract: MCH3307 MCH5836 SS10015M
Text: MCH5836 Ordering number : ENA0780A SANYO Semiconductors DATA SHEET MCH5836 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-channel silicon MOSFET MCH3307 and a schottky barrier diode (SS10015M)
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MCH5836
ENA0780A
MCH3307)
SS10015M)
PW10s,
A0780-6/6
SS1001
MCH3307
MCH5836
SS10015M
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P-Channel MOSFET code 1A
Abstract: P-channel Trench MOSFET Bi-Directional P-Channel mosfet SPC6801 SPC6801ST6RG 6P marking P-channel MOSFET VGS -25V
Text: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect
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SPC6801
SPC6801combines
-30V/-2
105ise
P-Channel MOSFET code 1A
P-channel Trench MOSFET
Bi-Directional P-Channel mosfet
SPC6801
SPC6801ST6RG
6P marking
P-channel MOSFET VGS -25V
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Schottky Diode 20V 5A
Abstract: Bi-Directional P-Channel mosfet IR P-Channel mosfet SPC6801 SPC6801ST6RG P-Channel MOSFET code 1A
Text: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect
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SPC6801
SPC6801combines
-30V/-2
105ise
Schottky Diode 20V 5A
Bi-Directional P-Channel mosfet
IR P-Channel mosfet
SPC6801
SPC6801ST6RG
P-Channel MOSFET code 1A
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MCH6627
Abstract: No abstract text available
Text: MCH6627 Ordering number : ENN8000 MCH6627 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6627 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching, thereby enabling high-density mounting.
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MCH6627
ENN8000
MCH6627
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Untitled
Abstract: No abstract text available
Text: MCH6627 Ordering number : ENN8000 N-Channel and P-Channel Silicon MOSFETs MCH6627 General-Purpose Switching Device Applications Features • • • The MCH6627 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching, thereby enabling high-density mounting.
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MCH6627
ENN8000
MCH6627
900mm2â
MCH6627/D
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CPH5605
Abstract: No abstract text available
Text: Ordering number:ENN6441 N-Channel and P-Channel Silicon MOSFETs CPH5605 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5605] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • The CPH5605 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON
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ENN6441
CPH5605
CPH5605]
CPH5605
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it-007
Abstract: CPH5605 IT01080
Text: Ordering number:ENN6441 N-Channel and P-Channel Silicon MOSFETs CPH5605 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5605] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • The CPH5605 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON
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ENN6441
CPH5605
CPH5605]
CPH5605
it-007
IT01080
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82306
Abstract: SCH2811
Text: SCH2811 Ordering number : ENA0440 SANYO Semiconductors DATA SHEET SCH2811 Features • • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET and a Schottky barrier diode contained in one package
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SCH2811
ENA0440
A0440-6/6
82306
SCH2811
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AAT4601
Abstract: AAT4625 AAT4626 AAT4626IAS-1-T1 AAT4626IAS-T1
Text: AAT4626 USB Dual-Channel Power Switch SmartSwitch General Description Features The AAT4626 SmartSwitch is part of AnalogicTech's Application Specific Power MOSFET™ ASPM™ product family. It is a dual-channel 500mA currentlimited P-channel MOSFET power switch designed
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AAT4626
AAT4626
500mA
AAT4601
AAT4625
AAT4626IAS-1-T1
AAT4626IAS-T1
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MCH6626
Abstract: No abstract text available
Text: MCH6626 Ordering number : ENN7918 N-Channel and P-Channel Silicon MOSFETs MCH6626 General-Purpose Switching Device Applications unit : mm 2173A [MCH6626] 0.3 4 0.25 2.1 • The MCH6626 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling
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MCH6626
ENN7918
MCH6626]
MCH6626
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Untitled
Abstract: No abstract text available
Text: Ordering number: ENN6980 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 /SANYO, DC / DC Converter Applications Features Package Dimensions • Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171
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OCR Scan
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ENN6980
CPH5804
MCH3312)
SBS006M)
CPH5804]
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