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    P CHANNEL POWER MOSFET IRF Search Results

    P CHANNEL POWER MOSFET IRF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P CHANNEL POWER MOSFET IRF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF95

    Abstract: IRF9510 p channel mosfet 100v TA17541
    Text: [ /Title IRF95 10 /Subject (3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, P-Channel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark IRF9510 Data Sheet July 1999 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET


    Original     		PDF IRF95 O220AB IRF9510 IRF95 IRF9510 p channel mosfet 100v TA17541

    IRFD9110

    Abstract: TA17541
    Text: IRFD9110 Data Sheet January 2002 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET Features • 0.7A, 100V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFD9110 IRFD9110 TA17541

    IRFF9130

    Abstract: No abstract text available
    Text: IRFF9130 Data Sheet January 2002 -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET Features • -6.5A, -100V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF9130 -100V, -100V IRFF9130

    IRFF9230

    Abstract: No abstract text available
    Text: IRFF9230 Data Sheet January 2002 -4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET Features • -4.0A, -200V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF9230 -200V, -200V IRFF9230

    IRFD9220

    Abstract: No abstract text available
    Text: IRFD9220 Data Sheet January 2002 0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET Features • 0.6A, 200V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFD9220 IRFD9220

    F7101

    Abstract: IRF7101 IRF7338
    Text: PD - 94372C IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω P-CHANNEL MOSFET


    Original     		PDF 94372C IRF7338 EIA-481 EIA-541. F7101 IRF7101 IRF7338

    P-channel N-Channel power mosfet SO-8

    Abstract: IRF7350PBF IRF7350
    Text: PD - 95367 IRF7350PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel Lead-Free S1 N-CHANNEL MOSFET 1 8 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Top View N-Ch P-Ch VDSS 100V


    Original     		PDF IRF7350PbF -100V EIA-481 EIA-541. P-channel N-Channel power mosfet SO-8 IRF7350PBF IRF7350

    Untitled

    Abstract: No abstract text available
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 IRF9150 -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRF9150 -100V, -100V

    IRF7338

    Abstract: MOSFET N-CHANNEL 60v 60A
    Text: PD - 94372B IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω P-CHANNEL MOSFET


    Original     		PDF 94372B IRF7338 EIA-481 EIA-541. IRF7338 MOSFET N-CHANNEL 60v 60A

    F7101

    Abstract: IRF7101 IRF7338
    Text: PD - 94372A IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 P-CHANNEL MOSFET VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω


    Original     		PDF 4372A IRF7338 EIA-481 EIA-541. F7101 IRF7101 IRF7338

    IRFF9230

    Abstract: TA17512
    Text: IRFF9230 Data Sheet February 1999 -4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET File Number 2225.2 Features • -4.0A, -200V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF9230 -200V, -200V IRFF9230 TA17512

    IRFF9130

    Abstract: No abstract text available
    Text: IRFF9130 Data Sheet February 1999 -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET File Number 2216.3 Features • -6.5A, -100V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF9130 -100V, -100V IRFF9130

    irf7381pbf

    Abstract: No abstract text available
    Text: PD - 95940 IRF7381PbF HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Freel Description l l HEXFET® These P-Channel power MOSFETs from International Rectifier utilize advanced processing


    Original     		PDF IRF7381PbF EIA-481 EIA-541. irf7381pbf

    P-Channel mosfet 400v

    Abstract: IRF7101
    Text: PD - 95296 IRF7317PbF HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Fully Avalanche Rated l Lead-Free Description l l S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET


    Original     		PDF IRF7317PbF EIA-481 EIA-541. P-Channel mosfet 400v IRF7101

    IRF7319PBF

    Abstract: irf MOSFET p-CH
    Text: PD - 95267 IRF7319PbF l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Description


    Original     		PDF IRF7319PbF and12 EIA-481 EIA-541. IRF7319PBF irf MOSFET p-CH

    IRFD9220

    Abstract: No abstract text available
    Text: IRFD9220 Data Sheet July 1999 0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET File Number 2286.3 Features • 0.6A, 200V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFD9220 IRFD9220

    irf9620

    Abstract: No abstract text available
    Text: IRF9620 Data Sheet Title F96 bt A, 0V, 00 m, July 1999 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of


    Original     		PDF IRF9620 TA17502. irf9620

    IRFD9110

    Abstract: TA17541
    Text: IRFD9110 Data Sheet July 1999 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET File Number 2215.3 Features • 0.7A, 100V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFD9110 IRFD9110 TA17541

    IRF7343

    Abstract: No abstract text available
    Text: PD -91709A IRF7343 l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated HEXFET Power MOSFET S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF -91709A IRF7343 EIA-481 EIA-541. IRF7343

    p12p10

    Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
    Text: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851


    OCR Scan     		PDF 2N6804 2N6849 2N6851 2N6895 2N6896 2N6897 2N6898 IRF9130, IRF9131, IRF9132, p12p10 IRF9530* p-channel power MOSFET Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240

    Untitled

    Abstract: No abstract text available
    Text: IRF9510 Semiconductor Data Sheet April 1999 -3.0A, -100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancem ent mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of


    OCR Scan     		PDF IRF9510 -100V, O-220AB -100V

    100V 60A Mosfet

    Abstract: 50V 60A MOSFET P-Channel 200V MOSFET MOSFET ESD Rated P-Channel 451 MOSFET Pchannel 15a 50v p-channel mosfet P-Channel 60V MOSFET P-Channel Enhancement-Mode
    Text: POWER MOSFETs 4 P-CHANNEL POWER MOSFETs PAGE P-CHANNEL POWER MOSFET DATA SHEETS IRFU9110, IRFR9110 3.1A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s . 4-3 IRFU9120, IRFR9120 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s .


    OCR Scan     		PDF IRFU9110, IRFR9110 IRFU9120, IRFR9120 IRFR9220, IRFU9220 RFD8P06E, RFD8P06ESM, RFP8P06E RFD15P05, 100V 60A Mosfet 50V 60A MOSFET P-Channel 200V MOSFET MOSFET ESD Rated P-Channel 451 MOSFET Pchannel 15a 50v p-channel mosfet P-Channel 60V MOSFET P-Channel Enhancement-Mode

    Untitled

    Abstract: No abstract text available
    Text: IRFP9140 Semiconductor April 1999 Data Sheet -19A, -100V, 0.200 Ohm, P-Channel Power MOSFET This is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel


    OCR Scan     		PDF IRFP9140 -100V, O-247 -100V 200i2

    1RF7105

    Abstract: 1RF710 irf7105 mosfet MOSFET C65 irf7105 ior 050a
    Text: PD - 9.1097B International IOR Rectifier IRF7105 HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Dual N and P Channel Mosfet • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching 'P-CHANNEL MOSFET !


    OCR Scan     		PDF 1097B IRF7105 1RF7105 1RF710 irf7105 mosfet MOSFET C65 irf7105 ior 050a