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    P-CHANNEL 01 Search Results

    P-CHANNEL 01 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL 01 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A12 marking

    Abstract: A12S MARKING A12 SOT-23 n-channel SOT-89 P-channel A12 s M/TOREX MARKING RULE
    Text: XP13/15/16 Series •MARKING RULE ① Represents channel and product group MARK CHANNEL/PRODUCT GROUP ●XP13x Series 1 2 3 4 5 ①②③ N-Channel, Single P-Channel, Single N-Channel, Dual P-Channel, Dual N-Channel, P-Channel, Complementary ②,③ Represents Product number


    Original     		PDF XP13/15/16 XP13x XP131A* XP132A* XP133A* XP134A* XP135A* XP15x OT-23 XP16x A12 marking A12S MARKING A12 SOT-23 n-channel SOT-89 P-channel A12 s M/TOREX MARKING RULE

    TPC8403

    Abstract: 5106a
    Text: TPC8403 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Dreive Notebook PC Portable Machines and Tools Unit: mm • P Channel RDS (ON) = 45 mΩ (typ.) N Channel RDS (ON) = 25 mΩ (typ.) High forward transfer admittance: P Channel |Yfs| = 6.2 S (typ.)


    Original     		PDF TPC8403 TPC8403 5106a

    si3529

    Abstract: Si3529DV SI3529DV-T1-E3
    Text: Si3529DV New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel rDS(on) (W) 0.125 @ VGS = 10 V 2.250 0.165 @ VGS = 4.5 V 1.95 0.215 @ VGS = –10 V –1.76 0.335 @ VGS = –4.5 V


    Original     		PDF Si3529DV Si3529DV-T1--E3 51448--Rev. 01-Aug-05 si3529 SI3529DV-T1-E3

    TPC8404

    Abstract: No abstract text available
    Text: TPC8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel π-MOSV/N Channel π-MOSV TPC8404 Motor Dreive Switching Regulator Applications • • Unit: mm Low drain-source ON resistance: P Channel RDS (ON) = 1.85 Ω (typ.) N Channel RDS (ON) = 1.2 Ω (typ.)


    Original     		PDF TPC8404 -250V) TPC8404

    TPC8404

    Abstract: No abstract text available
    Text: TPC8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel π-MOSV/N Channel π-MOSV TPC8404 Motor Dreive Switching Regulator Applications • • Unit: mm Low drain-source ON resistance: P Channel RDS (ON) = 1.85 Ω (typ.) N Channel RDS (ON) = 1.2 Ω (typ.)


    Original     		PDF TPC8404 -100A -250V) TPC8404

    Untitled

    Abstract: No abstract text available
    Text: Si3529DV New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel rDS(on) (W) 0.125 @ VGS = 10 V 2.250 0.165 @ VGS = 4.5 V 1.95 0.215 @ VGS = –10 V –1.76 0.335 @ VGS = –4.5 V


    Original     		PDF Si3529DV Si3529DV-T1--E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: TPC8403 TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Drive Applications Notebook PC Applications Unit: mm Portable Equipment Applications • • Low drain-source ON resistance: P Channel RDS (ON) = 45 mΩ (typ.)


    Original     		PDF TPC8403

    Untitled

    Abstract: No abstract text available
    Text: TPC8403 TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Drive Applications Notebook PC Applications Unit: mm Portable Equipment Applications • • Low drain-source ON resistance: P Channel RDS (ON) = 45 mΩ (typ.)


    Original     		PDF TPC8403

    tpc8403

    Abstract: No abstract text available
    Text: TPC8403 TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Drive Applications Notebook PC Applications Unit: mm Portable Equipment Applications • • Low drain-source ON resistance: P Channel RDS (ON) = 45 mΩ (typ.)


    Original     		PDF TPC8403 tpc8403

    Untitled

    Abstract: No abstract text available
    Text: TPC8403 TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Drive Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Low drain-source ON resistance: • P Channel RDS (ON) = 45 mΩ (typ.)


    Original     		PDF TPC8403

    TPC8405

    Abstract: No abstract text available
    Text: TPC8405 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type P Channel U−MOS IV/N Channel U-MOS III TPC8405 Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm z Low drain-source ON resistance : P Channel RDS (ON) = 25 mΩ (typ.)


    Original     		PDF TPC8405 TPC8405

    TPC8405

    Abstract: No abstract text available
    Text: TPC8405 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type P Channel U−MOS IV/N Channel U-MOS III TPC8405 Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm z Low drain-source ON resistance : P Channel RDS (ON) = 25 mΩ (typ.)


    Original     		PDF TPC8405 TPC8405

    TPC8405

    Abstract: No abstract text available
    Text: TPC8405 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type P Channel U−MOS IV/N Channel U-MOS III TPC8405 Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm z Low drain-source ON resistance : P Channel RDS (ON) = 25 mΩ (typ.)


    Original     		PDF TPC8405 TPC8405

    lptt

    Abstract: MM74C907
    Text: MM54C906,MM54C907,MM74C906,MM74C907 MM54C906 MM74C906 Hex Open Drain N-Channel Buffers MM54C907 MM74C907 Hex Open Drain P-Channel Buffers Literature Number: SNOS342A MM54C906 MM74C906 Hex Open Drain N-Channel Buffers MM54C907 MM74C907 Hex Open Drain P-Channel Buffers


    Original     		PDF MM54C906 MM54C907 MM74C906 MM74C907 MM74C907 SNOS342A lptt

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet µPA2816T1S P-channel MOS FIELD EFFECT TRANSISTOR R07DS0778EJ0100 Rev.1.00 Jun 01, 2012 Description The µPA2816T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features


    Original     		PDF PA2816T1S R07DS0778EJ0100 PA2816T1S PA2816T1S-E2-AT

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet µPA2814T1S P-channel MOS FIELD EFFECT TRANSISTOR R07DS0776EJ0100 Rev.1.00 Jun 01, 2012 Description The µPA2814T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features


    Original     		PDF PA2814T1S R07DS0776EJ0100 PA2814T1S PA2814T1S-E2-AT

    Untitled

    Abstract: No abstract text available
    Text: MA6301S10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter N-Channel P-Channel Units VDS Drain-Source Voltage 60 -60 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D061009


    Original     		PDF MA6301S10000000 D061009

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2816T1S P-channel MOS FIELD EFFECT TRANSISTOR R07DS0778EJ0100 Rev.1.00 Jun 01, 2012 Description The μPA2816T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features


    Original     		PDF PA2816T1S R07DS0778EJ0100 PA2816T1S PA2816T1S-E2-AT

    Untitled

    Abstract: No abstract text available
    Text: MA2607V10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage N-Channel P-Channel 20 -20 Units V TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610


    Original     		PDF MA2607V10000000 D032610

    Untitled

    Abstract: No abstract text available
    Text: MA2604V10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter N-Channel P-Channel Units VDS Drain-Source Voltage 20 20 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610


    Original     		PDF MA2604V10000000 D032610

    p-channel m21

    Abstract: No abstract text available
    Text: Data Sheet PA2815T1S P-channel MOS FIELD EFFECT TRANSISTOR R07DS0777EJ0100 Rev.1.00 Jun 01, 2012 Description The μPA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features


    Original     		PDF PA2815T1S R07DS0777EJ0100 PA2815T1S PA2815T1S-E2-AT p-channel m21

    Untitled

    Abstract: No abstract text available
    Text: MA3805V10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage N-Channel P-Channel 30 -30 Units V TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610


    Original     		PDF MA3805V10000000 D032610

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet µPA2815T1S P-channel MOS FIELD EFFECT TRANSISTOR R07DS0777EJ0100 Rev.1.00 Jun 01, 2012 Description The µPA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features


    Original     		PDF PA2815T1S R07DS0777EJ0100 PA2815T1S PA2815T1S-E2-AT

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2814T1S P-channel MOS FIELD EFFECT TRANSISTOR R07DS0776EJ0100 Rev.1.00 Jun 01, 2012 Description The μPA2814T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features


    Original     		PDF PA2814T1S R07DS0776EJ0100 PA2814T1S PA2814T1S-E2-AT