MFQ5460P
Abstract: 2N5460 DS46
Text: MFQ5460P o QUAD DUAL-IN-LINE P-CHANNEL JUNCTION FIELD-EFFECTTRANSISTORS . . . depletion mode Type A junction field-effect transistors signed for use in general-purpose amplifier applications. . de- High Gate-Source Breakdown Voltage — V(BR)GSS = 40 Vdc (Min)
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MFQ5460P
2N5460
MFQ5460P
2N5460
DS46
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Untitled
Abstract: No abstract text available
Text: 2N5116 P-Channel silicon junction field-effect transistor 4.85 Transistors. 1 of 1 Home Part Number: 2N5116 Online Store 2N5116 Diodes P- C hannel s ilic o n junct io n field- effec t trans is t o r
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2N5116
com/2n5116
2N5116
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Untitled
Abstract: No abstract text available
Text: 2N5115 P-Channel silicon junction field-effect transistor 6.00 Transistors. 1 of 1 Home Part Number: 2N5115 Online Store 2N5115 Diodes P- C hannel s ilic o n junct io n field- effec t trans is t o r
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2N5115
com/2n5115
2N5115
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2n5460
Abstract: No abstract text available
Text: 2N5460 P-Channel silicon junction field-effect transistor 2.00 Transistors. 1 of 1 Home Part Number: 2N5460 Online Store 2N5460 Diodes P- C hannel s ilic o n junct io n field- effec t trans is t o r
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2N5460
com/2n5460
2N5460
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2N3993
Abstract: 1450 transistor
Text: 2N3993 P-Channel silicon junction field-effect transistor 14.50 Transistor. 1 of 1 Home Part Number: 2N3993 Online Store 2N3993 Diodes P- C hannel s ilic o n junct io n field- effec t trans is t o r
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2N3993
com/2n3993
2N3993
1450 transistor
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2SK146
Abstract: 2SK147 equivalent 2sk146 datasheet 2sk146 equivalent 2SK147 IFN152 IFN146 2SK113 IFP44 2SJ44
Text: Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P
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2SK113
2SK152
2SK363
2SJ44
IFN113
IFN152
IFN363
IFP44
NJ132
NJ132L
2SK146
2SK147 equivalent
2sk146 datasheet
2sk146 equivalent
2SK147
IFN152
IFN146
2SK113
IFP44
2SJ44
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2sk152 equivalent
Abstract: IFN152 INTERFET 2SK152 2SJ44 IFP44 2SK113 10 V jfet databook 2SK363
Text: Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P
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2SK113
2SK152
2SK363
2SJ44
IFN113
IFN152
IFN363
IFP44
NJ132
NJ132L
2sk152 equivalent
IFN152
INTERFET
2SK152
2SJ44
IFP44
2SK113
10 V
jfet databook
2SK363
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Untitled
Abstract: No abstract text available
Text: SELECTION GUIDE Page N-channel junction field-effect transistors 8 N-channel junction field-effect transistors for switching 10 P-channel junction field-effect transistors for switching 12 N-channel single-gate MOS-FETs for switching 12 N-channel dual-gate MOS-FETs
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MPF970
Abstract: MPF971 MPF910
Text: MPF970 silicon MPF971 SILICON P-CHANNEL JUNCTION FIELD—EFFECT TRANSISTORS P-CHANNEL Depletion Mode (Type A ) Junction Field-Effect Transistors designed for chopper and high-speed switching applications. JUNCTION FIELD-EFFECT TRANSISTORS M A XIM U M RATINGS
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MPF970
MPF971
MPF970
MPF971
MPF910
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MFE4007
Abstract: mfe 4010 MFE4010 3 DG 1008 MFE4008 MFE4009 MFE4011 MFE4012
Text: MFE4007 silicon MFE4012 thru P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS . . . depletion mode (Type A) Field-Effect Transistors designed for general-purpose amplifier applications. P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS • Tightly Specified loss Ranges — 2:1 for All Types
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MFE4007
MFE4012
MFE4007
mfe 4010
MFE4010
3 DG 1008
MFE4008
MFE4009
MFE4011
MFE4012
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BC264A
Abstract: BC264 BC264D IEC134
Text: 711GêBb Q0b745T T3b » P H I N BC264A to D yv N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical N-channel planar epitaxial junction field-effect transistors In a plastic TO-92 variant; in tended for hi-fi amplifiers and other audio-frequency equipment.
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Q0b745T
BC264A
BC264
BC264D
IEC134
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PN4416
Abstract: BF98 BF991 BF998 BF909WR BF1105WR
Text: Philips Semiconductors Small-signal field-effect transistors Selection guide N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS CHARACTERISTICS TYPE NUMBER PACKAGE ±VDs V •g (mA) •d s s iytsl (mS) ~V(P)GS (V) min - max (mA) Crs (PF) PAGE General purpose analog applications
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PMBFJ210
PMBFJ211
PMBFJ212
BF245A
BF245B
BF245C
BF545A
BF545B
BF545C
BF556A
PN4416
BF98
BF991
BF998
BF909WR
BF1105WR
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2sk152 equivalent
Abstract: 2SJ44 2SK113 2SK152
Text: _ Japanese Equivalent JFET Types SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Process Unit Limit V M in Parameters
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2SK113
2SK152
2SK363
2SJ44
IFN113
IFN152
IFN363
IFP44
NJ132
NJ132L
2sk152 equivalent
2SJ44
2SK113
2SK152
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transistor BF245b
Abstract: BF245A BF245A/3 Transistor BF245A BF245C BF245A-B-C BB532
Text: b BE D WÊ bbiBTEM _N A P C / P H I L I P S DDTSST? 113 W Ê S I C 3 SEMICOND _ BF245A TO C J N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS General purpose symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO -92 variant; intended fo r applications in l.f. and d.c. amplifiers, and in h.f. amplifiers.
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BF245A
transistor BF245b
BF245A/3
Transistor BF245A
BF245C
BF245A-B-C
BB532
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Untitled
Abstract: No abstract text available
Text: • £.b53531 002MLi21 ?TD H A P X N AUER PHILIPS/DISCRETE BF510 to 513 b?E D J V N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended fo r applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special
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b53531
002MLi21
BF510
BF510)
BF511)
BF512)
BF513)
bb53531
D02MbE4
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philips bsd215
Abstract: BST110 BF909WR
Text: Philips Semiconductors Selection guide Small-signal Field-effect Transistors N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS CHARACTERISTICS TYPE NUMBER ± V Ds PACKAGE V Id Ig (mA) ly ts l ss “ V (P )G S min - max (mA) min. (mS) (V ) C r, PAGE (PF) Hi-fi amplifiers and AF equipment
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BC264A
BC264B
BC264C
BC264D
BF245A
BST120
BST122
PHP112
PHP125
PHC2102501
philips bsd215
BST110
BF909WR
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Untitled
Abstract: No abstract text available
Text: 9-97 E3 ^ ^ ^ ^ ^ ^ ^ ^^ ^ Jaj> an est^ c|u ivalen ^ F ^ n h £|jes SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit
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2SK113
2SK152
2SK363
2SJ44
IFN113
IFN152
IFN363
IFP44
NJ132
NJ132L
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2N5245
Abstract: 2N5247 2NS245
Text: TYPES 2NS245 THRU 2N5247 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L -S 6810 9 1 7 , S E P T E M B E R 1968 N-CHANNEL SILECTf FIELD-EFFECT TRANSISTORS t FOR VHF AMPLIFIER AND MIXER APPLICATIONS High Power G a in . . . 10 dB Min at 400 MHz
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2NS245
2N5247
2N524S,
2NS247)
2N5245
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BFR31
Abstract: BFR30 MARKING CODE 7E VF 53 TAM transistor marking code 7E SOT-23 BFR31 MARKING CODE
Text: • bb53T31 0025137 440 H A P X BFR30 BFR31 b?E D N AMER P H I L I P S / D I S C R E T E 7 V. N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Planar epitaxial symmetrical junction field effect transistor in a microminiature plastic envelope. It is intended for low level general purpose amplifiers in thick and thin-film circuits.
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bb53T31
BFR30
BFR31
BFR30
OT-23.
BFR31
MARKING CODE 7E VF
53 TAM
transistor marking code 7E SOT-23
BFR31 MARKING CODE
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Untitled
Abstract: No abstract text available
Text: bb53T31 DQ240CH 70S « A P X N AMER PHILIPS/DISCRETE J174 TO 177 b?E D J V P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended fo r application with analog switches, choppers, commutators etc.
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bb53T31
DQ240CH
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Untitled
Abstract: No abstract text available
Text: J174 TO 177 _/ V _ P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended fo r application w ith analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.
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2N4221 motorola
Abstract: MPF102 switch application mpf102 fet FET 2N5459 MFE131 BF245C FET 5457 2N4220 MOTOROLA 2N5459 MOTOROLA 2N3993
Text: Transistors Field effect transistors Motorola offers a line of field-effect transistors that encompasses the latest technology and covers the full range of F E T applications. Included is a wide variety of junction FETs and MOSFETs, with N- or P-channel polarity with both single and dual gates. These FETs include devices developed for operation
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2N5462
MFE824
MPF102
BF245A
BF245B
BF245C
2N4221 motorola
MPF102 switch application
mpf102 fet
FET 2N5459
MFE131
FET 5457
2N4220 MOTOROLA
2N5459 MOTOROLA
2N3993
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2N5949
Abstract: 2n5961
Text: TYPES 2N5949 THRU 2N5953 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T I N N O . D L -S 7 0 1 1 3 3 8 . A P R IL 1 9 7 0 SILECTt FIELD-EFFECT TRANSISTORS^ • Narrow IDSS and VQS{off Ranges • For Low-Noise Audio-Frequency Amplifier Applications
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2N5949
2N5953
IL-STD-202C
2n5961
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2N3330
Abstract: 2N3332 2N3331 2n3329
Text: TYPES 2N3329 THRU 2N3332 P CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T I N N O D L S 644905, M A R C H 1964 FOR SMALL-SIGNAL, LOW-NOISE APPLICATIONS
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2N3329
2N3332
2K3329
2N3330
2N333I
2N3331
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