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    P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING Search Results

    P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UPA610TA(0)-T1-AT Renesas Electronics Corporation P-Channel Mos Field Effect Transistor For High Speed Switching Visit Renesas Electronics Corporation
    UPA610TA-T1-A Renesas Electronics Corporation P-Channel Mos Field Effect Transistor For High Speed Switching, MM, /Embossed Tape Visit Renesas Electronics Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S-90P0112SMA

    Abstract: S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
    Text: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0112SMA The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set


    Original     		PDF S-90P0112SMA S-90P0112SMA OT-23-3 S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF

    S-90P0112SMA-TF

    Abstract: S-90P0222SUA-TF S-90P0332SUA S-90P0332SUA-TF
    Text: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0332SUA The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set


    Original     		PDF S-90P0332SUA S-90P0332SUA OT-89-3 S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF

    S-90P0112SMA-TF

    Abstract: S-90P0222SUA S-90P0222SUA-TF S-90P0332SUA-TF
    Text: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0222SUA The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set


    Original     		PDF S-90P0222SUA S-90P0222SUA OT-89-3 S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF

    S-90P0112SMA

    Abstract: FET MARKING CODE sot-89 MARKING CODE 4A S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
    Text: Rev.1.0_01 S-90P0112SMA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set


    Original     		PDF S-90P0112SMA S-90P0112SMA OT-23-3 OT-23-3 S-90P0112SMA-TF FET MARKING CODE sot-89 MARKING CODE 4A S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF

    S-90P0222SUA

    Abstract: 90P03 S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
    Text: Rev.1.0_01 S-90P0222SUA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set


    Original     		PDF S-90P0222SUA S-90P0222SUA OT-89-3 OT-89-3 S-90P0222SUA-TF 90P03 S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF

    S-90P0332SUA

    Abstract: S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF 13003 TRANSISTOR equivalent
    Text: Rev.1.0_01 S-90P0332SUA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set


    Original     		PDF S-90P0332SUA S-90P0332SUA OT-89-3 OT-89-3 S-90P0332SUA-TF S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF 13003 TRANSISTOR equivalent

    2SJ357

    Abstract: TC-2490 C11531E
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ357 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH The 2SJ357 is a P-channel vertical MOS FET that can be Package Drawings unit: mm used as a switching element. The 2SJ357 can be directly driven by an IC operating at 5 V.


    Original     		PDF 2SJ357 2SJ357 TC-2490 C11531E

    2SJ358

    Abstract: MEI-1202
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ358 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH Package Drawings unit: mm The 2SJ358 is a P-channel vertical MOS FET that can be used as a switching element. The 2SJ358 can be 5.7 ±0.1 1.0 3 0.5 ±0.1 0.5 ±0.1 2.1


    Original     		PDF 2SJ358 2SJ358 MEI-1202

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJM0404JSC Silicon N/P Channel Power MOS FET 6 in 1 Type High Speed Power Switching R07DS0338EJ0500 Rev.5.00 May 11, 2011 Features •     For Automotive applications AEC-Q101 compliant N/P Channel MOS FET (6 in 1 Type). High density mounting


    Original     		PDF RJM0404JSC R07DS0338EJ0500 AEC-Q101 PRSP0020DF-A HSOP-20) R07DS0338EJ0500

    RJM0404JSC

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJM0404JSC Silicon N/P Channel Power MOS FET 6 in 1 Type High Speed Power Switching R07DS0338EJ0500 Rev.5.00 May 11, 2011 Features •     For Automotive applications AEC-Q101 compliant N/P Channel MOS FET (6 in 1 Type). High density mounting


    Original     		PDF RJM0404JSC AEC-Q101 R07DS0338EJ0500 PRSP0020DF-A HSOP-20) RJM0404JSC

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJM0603JSC Silicon N/P Channel Power MOS FET 6 in 1 Type High Speed Power Switching R07DS0339EJ0501 Rev.5.01 Jul 22, 2011 Features •     For Automotive applications AEC-Q101 compliant N/P Channel MOS FET (6 in 1 Type). High density mounting


    Original     		PDF RJM0603JSC R07DS0339EJ0501 AEC-Q101 PRSP0020DF-A HSOP-20) R07DS0339EJ0501

    2SJ356

    Abstract: C10535E MEI-1202 marking pr p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ356 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ356 is a P-channel MOS FET of a vertical type and is PACKAGE DIMENSIONS in mm a switching element that can be directly driven by the output of an 4.5 ±0.1 IC operating at 5 V.


    Original     		PDF 2SJ356 2SJ356 C10535E MEI-1202 marking pr p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

    Untitled

    Abstract: No abstract text available
    Text: MP4211 TOSHIBA Power MOS FET Module Silicon P Channel MOS Type Four L2-π-MOSV inOne MP4211 Industrial Applications High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver • 4-V gate drivability


    Original     		PDF MP4211

    2sj117

    Abstract: Hitachi 2SJ Hitachi DSA002756 hitachi 2sj117
    Text: 2SJ117 Silicon P-Channel MOS FET Application High speed power switching Features • • • • High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators.


    Original     		PDF 2SJ117 2sj117 Hitachi 2SJ Hitachi DSA002756 hitachi 2sj117

    2SJ173

    Abstract: No abstract text available
    Text: , Line. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 2SJ173 P \ Suitable for Mo ii SILICON P- CHANNEL MOS FET -V* '* '>* HIGH SPEED POWER SWITCHING • FEATURES 3 Low OrvResislance • High Speed Switching


    Original     		PDF 2SJ173 220AB) 2SJ173

    Hitachi DSA002713

    Abstract: No abstract text available
    Text: 2SJ317 Silicon P-Channel MOS FET November 1996 Application High speed power switching Low voltage operation Features • Very low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.


    Original     		PDF 2SJ317 Hitachi DSA002713

    transistor 2sk

    Abstract: S10ms 2SJ184 2SK1398 T100 T200
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SJ184 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ184, P-channel vertical type MOS FET, is a switching device


    OCR Scan     		PDF 2SJ184 2SJ184, transistor 2sk S10ms 2SJ184 2SK1398 T100 T200

    2SJ180

    Abstract: No abstract text available
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SJ180 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ180, P-channel vertical type MOS FET, is a switching device


    OCR Scan     		PDF 2SJ180 2SJ180, 2SJ180

    2SJ166

    Abstract: 2SJ186 2SK1132 T100 p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING marking
    Text: m - MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2SJ166 P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm 2.8 ± 0.2 1.5 The 2SJ166, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power


    OCR Scan     		PDF 2SJ166 2SJ166, 2SJ166 2SJ186 2SK1132 T100 p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING marking

    2SJ180

    Abstract: No abstract text available
    Text: MOS FIELD EFFECT TRANSISTOR 2SJ180 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ180, P-channel vertical type MOS FET, is a switching device w hich can be driven d ire ctly by the o u tp u t o f ICs having a 5 V power OUTLINE DIMENSIONS U n it: mm source.


    OCR Scan     		PDF 2SJ180 2SJ180, 2SJ180

    NEC Zener diode product List

    Abstract: 2SJ178 2sj178 transistor
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD-EFFECT TRANSISTOR 2SJ178 P-CHANIMEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ178 is a p-channel vertical type MOS FET switching device


    OCR Scan     		PDF 2SJ178 2SJ178 NEC Zener diode product List 2sj178 transistor

    fet e300

    Abstract: 2SJ185 2SK1399 T100 T200 p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING marking
    Text: MOS FIELD EFFECT TRANSISTOR 2SJ185 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING OUTLINE DIMENSIONS Unit mm 2.8 ± 0.2 1.5 3 l € 0.65i§:05 FEATURES - 3 The 2SJ185 is a P-channel vertical type MOS FET w hich can be driven by 2.5 V power supply. As the MOS F ET is driven by low voltage and does not require con­


    OCR Scan     		PDF 2SJ185 2SJ185 fet e300 2SK1399 T100 T200 p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING marking

    2SJ179

    Abstract: 2317a 2SJ17 p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING zener diode MTZJ-T-77-7.5B
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ179 P-CHAIMNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ179, P-channel vertical type MOS F E T , is a switching device OUTLINE DIMENSIONS Unit : mm which can be driven directly by the output of ICs having a 5 V power


    OCR Scan     		PDF 2SJ179 2SJ179, 2SJ179 2317a 2SJ17 p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING zener diode MTZJ-T-77-7.5B

    2SJ178

    Abstract: 2SJ17 p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING 2sj178 transistor
    Text: MOS FIELD-EFFECT TRANSISTOR 2SJ178 P-CHANIMEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ178 is a p-channel vertical type MOS FET sw itching device O U T L IN E D IM ENSIO NS U n i t : m m w hich can be d ire ctly driven from an IC operating w ith a 5 V single


    OCR Scan     		PDF 2SJ178 2SJ178 2SJ17 p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING 2sj178 transistor