Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF9530 Preliminary POWER MOSFET -14A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF9530 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.
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UF9530
-100V
UF9530
-100V,
UF9530L-TA3-T
UF9530G-TA3-T
UF9530L-TM3-T
UF9530G-TM3-T
UF9530L-TN3-T
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ESD 141
Abstract: ON10M
Text: UNISONIC TECHNOLOGIES CO., LTD UTT4425 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT4425 is a P-channel enhancement mode power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low
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UTT4425
UTT4425
UTT4425L-S08-R
UTT4425G-S08-R
QW-R502-562
ESD 141
ON10M
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UTT4425 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT4425 is a P-channel enhancement mode power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low
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UTT4425
UTT4425
UTT4425L-S08-R
QW-R502-562
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT50P06 Power MOSFET -50A, -60V P-CHANNEL D-S POWER MOSFET DESCRIPTION The UTC UTT50P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand
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UTT50P06
UTT50P06
UTT50P06L-TA3-T
UTT50P06G-TA3-T
QW-R502-596
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT50P06 Power MOSFET -50A, -60V P-CHANNEL D-S POWER MOSFET DESCRIPTION The UTC UTT50P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand
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UTT50P06
UTT50P06
UTT50P06L-TA3-T
UTT50P06G-TA3-T
UTT50P06L-TN3-T
UTT50P06G-TN3-T
UTT50P06L-TN3-R
UTT50P06G-TN3-R
QW-R502-596,
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UTT50P06 Power MOSFET -50A, -60V P-CHANNEL D-S POWER MOSFET 1 TO-220 DESCRIPTION The UTC UTT50P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand
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UTT50P06
O-220
UTT50P06
O-262
O-252
UTT50P06L-TA3-T
UTT50P06G-TA3-T
UTT50P06L-TN3-T
UTT50P06G-TN3-T
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F7101
Abstract: IRF7101 IRF7338
Text: PD - 94372C IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω P-CHANNEL MOSFET
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94372C
IRF7338
EIA-481
EIA-541.
F7101
IRF7101
IRF7338
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IRF7338
Abstract: MOSFET N-CHANNEL 60v 60A
Text: PD - 94372B IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω P-CHANNEL MOSFET
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94372B
IRF7338
EIA-481
EIA-541.
IRF7338
MOSFET N-CHANNEL 60v 60A
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F7101
Abstract: IRF7101 IRF7338
Text: PD - 94372A IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 P-CHANNEL MOSFET VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω
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4372A
IRF7338
EIA-481
EIA-541.
F7101
IRF7101
IRF7338
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circuit diagram of mosfet based smps power supply
Abstract: FSD210 8-pin 6 PIN smps control ic FOR LED DRIVER SMPS MOSFET 3 phase smps circuit diagram using mosfet FQP2N60C 1000V P-channel MOSFET equivalent fsd210 FQPF1N60C 600V 2A MOSFET N-channel
Text: Intelligent Power Switch Integrates Low Current IC and P-Channel MOSFET for Slew Rate Control www.fairchildsemi.com/whats_new/fdc6901l_nph.html The FDC6901L is a one-of-a-kind power switch integrating an advanced Trench technology P-Channel MOSFET with a slew rate controller IC. The
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new/fdc6901l
FDC6901L
FDJ129P
Power247TM,
circuit diagram of mosfet based smps power supply
FSD210 8-pin
6 PIN smps control ic FOR LED DRIVER
SMPS MOSFET
3 phase smps circuit diagram using mosfet
FQP2N60C
1000V P-channel MOSFET
equivalent fsd210
FQPF1N60C
600V 2A MOSFET N-channel
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FDB6021P
Abstract: No abstract text available
Text: FDB6021P 20V P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel power MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for power management applications. • –28 A, –20 V. RDS ON = 30 mΩ @ VGS = 4.5 V
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FDB6021P
O-263AB
FDB6021P
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D2Pak Package dimensions
Abstract: transistor equivalent table fdb6021p CBVK741B019 FDB6021P FDP6021P FDP7060
Text: FDP6021P/FDB6021P 20V P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel power MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for power management applications. • –28 A, –20 V. RDS ON = 30 mΩ @ VGS = 4.5 V
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FDP6021P/FDB6021P
O-220
O-263AB
25opment.
D2Pak Package dimensions
transistor equivalent table fdb6021p
CBVK741B019
FDB6021P
FDP6021P
FDP7060
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FDP6021P
Abstract: FDB6021P
Text: FDP6021P/FDB6021P 20V P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel power MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for power management applications. • –28 A, –20 V. RDS ON = 30 mΩ @ VGS = 4.5 V
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FDP6021P/FDB6021P
O-220
O-263AB
25opment.
FDP6021P
FDB6021P
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Untitled
Abstract: No abstract text available
Text: PD-95262B IRF5803PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing
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PD-95262B
IRF5803PbF
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IRF7425
Abstract: MS-012AA
Text: PD- 94022 IRF7425 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 8.2@VGS = -4.5V 13@VGS = -2.5V -15A -13A 20V Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing
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IRF7425
IRF7425
MS-012AA
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Untitled
Abstract: No abstract text available
Text: PD-95262B IRF5803PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free Description D These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing
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PD-95262B
IRF5803PbF
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PD-96256
Abstract: No abstract text available
Text: PD-96256 IRF7424GPbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free Halogen-Free Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to
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PD-96256
IRF7424GPbF
EIA-481
EIA-541.
PD-96256
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Untitled
Abstract: No abstract text available
Text: PD- 94024A IRF7424 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon
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4024A
IRF7424
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Untitled
Abstract: No abstract text available
Text: PD- 93916 IRF7240 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon
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IRF7240
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F7101
Abstract: IRF7101 IRF7433 MS-012AA fet so-8 g 12 r
Text: PD -94056 IRF7433 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon
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IRF7433
F7101
IRF7101
IRF7433
MS-012AA
fet so-8 g 12 r
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IRF7240
Abstract: MS-012AA 30V 10.5A p-channel MOSFET
Text: PD- 93916 IRF7240 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon
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IRF7240
IRF7240
MS-012AA
30V 10.5A p-channel MOSFET
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IRF7424
Abstract: No abstract text available
Text: PD- 94024A IRF7424 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon
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4024A
IRF7424
IRF7424
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buz906dp
Abstract: No abstract text available
Text: BUZ905DP BUZ906DP M ECHANICAL DATA Dimensions in mm P-CHANNEL POWER MOSFET 5 .C POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V) • HIGH ENERGY RATING
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BUZ905DP
BUZ906DP
BUZ900DP
BUZ901DP
buz906dp
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BUZ905D
Abstract: No abstract text available
Text: BUZ905D BUZ906D IVI A CB INI A MECHANICAL DATA Dimensions in mm P-CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V • HIGH ENERGY RATING
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BUZ905D
BUZ906D
BUZ900D
BUZ901D
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